JPS6352476B2 - - Google Patents
Info
- Publication number
- JPS6352476B2 JPS6352476B2 JP1020679A JP1020679A JPS6352476B2 JP S6352476 B2 JPS6352476 B2 JP S6352476B2 JP 1020679 A JP1020679 A JP 1020679A JP 1020679 A JP1020679 A JP 1020679A JP S6352476 B2 JPS6352476 B2 JP S6352476B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- drain
- current
- voltage
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1020679A JPS55102276A (en) | 1979-01-30 | 1979-01-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1020679A JPS55102276A (en) | 1979-01-30 | 1979-01-30 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55102276A JPS55102276A (en) | 1980-08-05 |
JPS6352476B2 true JPS6352476B2 (enrdf_load_stackoverflow) | 1988-10-19 |
Family
ID=11743788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1020679A Granted JPS55102276A (en) | 1979-01-30 | 1979-01-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55102276A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2523465B2 (ja) * | 1982-06-02 | 1996-08-07 | 松下電器産業株式会社 | 静電誘導型半導体装置 |
JP2523466B2 (ja) * | 1982-11-17 | 1996-08-07 | 松下電器産業株式会社 | 静電誘導型半導体装置 |
-
1979
- 1979-01-30 JP JP1020679A patent/JPS55102276A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55102276A (en) | 1980-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6352475B2 (enrdf_load_stackoverflow) | ||
KR100858556B1 (ko) | 비대칭적 채널 구조를 가지는 전력 mos 소자 | |
EP0036887B1 (en) | Semiconductor devices controlled by depletion regions | |
US4470059A (en) | Gallium arsenide static induction transistor | |
JPH043981A (ja) | 伝導度変調型mosfet | |
JPS6318347B2 (enrdf_load_stackoverflow) | ||
KR101222758B1 (ko) | 높은 항복 전압 이중 게이트 반도체 디바이스 | |
JPS6323662B2 (enrdf_load_stackoverflow) | ||
WO2022085765A1 (ja) | 半導体装置 | |
JPS6352476B2 (enrdf_load_stackoverflow) | ||
CN118738084A (zh) | 一种半导体元件 | |
JP6606847B2 (ja) | 炭化ケイ素半導体装置及びその処理方法 | |
Nishizawa | Junction field-effect devices | |
JPS6241428B2 (enrdf_load_stackoverflow) | ||
JPH09246545A (ja) | 電力用半導体素子 | |
JPS5856270B2 (ja) | 絶縁ゲ−ト型静電誘導電界効果トランジスタ | |
JPH03292770A (ja) | 静電誘導サイリスタ | |
JPS6048933B2 (ja) | 集積回路 | |
JPS6137799B2 (enrdf_load_stackoverflow) | ||
JP2982049B2 (ja) | 絶縁ゲート型静電誘導トランジスタ | |
JPS626670B2 (enrdf_load_stackoverflow) | ||
CN117012803A (zh) | 碳化硅半导体元件 | |
JPH0468792B2 (enrdf_load_stackoverflow) | ||
JPS59130472A (ja) | 絶縁ゲ−ト形電界効果トランジスタ | |
JPS6323664B2 (enrdf_load_stackoverflow) |