JPS6350028A - Formation of thin-film - Google Patents
Formation of thin-filmInfo
- Publication number
- JPS6350028A JPS6350028A JP19462686A JP19462686A JPS6350028A JP S6350028 A JPS6350028 A JP S6350028A JP 19462686 A JP19462686 A JP 19462686A JP 19462686 A JP19462686 A JP 19462686A JP S6350028 A JPS6350028 A JP S6350028A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- film
- substrate
- reaction chamber
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 14
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 4
- 238000010849 ion bombardment Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 46
- 238000010586 diagram Methods 0.000 description 7
- 238000010494 dissociation reaction Methods 0.000 description 5
- 230000005593 dissociations Effects 0.000 description 5
- 229910005091 Si3N Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 210000004180 plasmocyte Anatomy 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
発散磁界型ＥＣＲ（電子サイクロトロン共鳴：Ｅｌｅｃ
ｔｒｏｎ Ｃｙｃｌｏｔｒｏｎ Ｒｅ５ｏｎａｎｃｅ）
プラズマ装置を用い、半導体基板上に、低温でＮ２ガス
とジシラン（５ｉｚｌ１６）等のプラズマにより窒化シ
リコン膜（Ｓｉ３Ｎ４膜）を形成するもので、低ストレ
スで緻密な良質の膜を高い成長速度で形成するものであ
る。[Detailed description of the invention] [Summary] Diverging magnetic field type ECR (electron cyclotron resonance: Elec
tron Cyclotron Re5onance)
Using a plasma device, a silicon nitride film (Si3N4 film) is formed on a semiconductor substrate at low temperatures by plasma of N2 gas and disilane (5izl16), etc., forming a dense, high-quality film at a high growth rate with low stress. It is something to do.
゛ 〔産業上の利用分野〕
本発明は発散磁界型ＥｃＲプラズマ装置を用いた薄膜形
成方法に係わり、特に高い解離率の材料ガスを用い、低
ストレスのＳｉ３Ｎ４膜を形成する方法に関する。[Field of Industrial Application] The present invention relates to a method for forming a thin film using a divergent magnetic field type EcR plasma apparatus, and particularly to a method for forming a low-stress Si3N4 film using a material gas with a high dissociation rate.
半導体基板、例えばシリコン（Ｓｔ）基板上に５ｉＪ４
膜を形成する方法としては、熱窒化法、ＣＶＤ法、ＲＦ
プラズマ法、ＥＣＲプラズマ法があるが、集積回路のチ
ップパッシベーション膜および多層配線構造の層間絶縁
膜として用いるためには、Ｓｉ３Ｎ４膜を形成する前に
既にアルミニウム（＾１）パターンが形成されているの
で、これに悪影響を及ぼすものであってはならない。5iJ4 on a semiconductor substrate, for example a silicon (St) substrate.
Methods for forming the film include thermal nitriding, CVD, and RF.
There are plasma methods and ECR plasma methods, but in order to use them as chip passivation films for integrated circuits and interlayer insulating films for multilayer wiring structures, an aluminum (^1) pattern has already been formed before forming the Si3N4 film. , must not have any negative impact on this.
熱窒化法、ＣＶＤ法は高温で膜形成が行われるので、こ
の目的のためには不適である。Thermal nitriding and CVD methods are unsuitable for this purpose because they form films at high temperatures.
ＲＦプラズマ法は、平行平板電極あるいはコイルにＲＦ
雷電圧印加することによりプラズマを発生させ、被膜を
形成する方法で、成長温度は４００〜４５０℃で、５ｉ
ｌ１４とＮＨ３ガスを導入し、０．１〜１．０Ｔｏｒｒ
に維持しながら、１３．５６ Ｍｔｌｚの高周波をかけ
ると、導入ガスはプラズマ化し、Ｓｉ基板上にＳｉ３Ｎ
４膜を被着形成することが出来る。The RF plasma method uses RF to parallel plate electrodes or coils.
This method generates plasma by applying lightning voltage to form a film, and the growth temperature is 400 to 450°C.
Introducing l14 and NH3 gas and increasing the temperature to 0.1 to 1.0 Torr.
When a high frequency of 13.56 Mtlz is applied while maintaining the
4 films can be deposited.
ＡＩパターンの耐え得る温度４５０℃以下で５ｉＪａ膜
を形成しているが、しかし、この方法で形成したＳｉ３
Ｎ４膜はその膜中に水素を含み熱処理による収縮率が大
で、従ってこれをパッシベーション膜としてへ１配線上
に形成した場合、Ｓｉ３Ｎ４膜が下方のΔＩ配綿に大き
なストレス（圧縮応力）をかけ、Ａｔ配線が陥没する等
の不良を生ずる。このとき、Ｓｉ３Ｎ４膜が下方膜に及
ぼす圧縮応力の大きさは、１０１０ｄｙｎｅ／ｃｍ２で
ある。Although the 5iJa film is formed at a temperature below 450°C, which the AI pattern can withstand, the Si3 film formed by this method
The N4 film contains hydrogen and has a high shrinkage rate during heat treatment. Therefore, when this film is formed as a passivation film on the first wiring, the Si3N4 film will apply a large stress (compressive stress) to the ΔI cotton distribution below. , defects such as depression of the At wiring occur. At this time, the magnitude of compressive stress exerted by the Si3N4 film on the lower film is 1010 dyne/cm2.
又、この方法によると、Ｎ１（３ガスの解離が充分でな
く、Ｎ゛、Ｎ２ ”イオンの発生が少ないため、Ｓｉ：
＋Ｎａ膜成長速度は４００〜７００人／ ｍ ｉ ｎ程
度である。In addition, according to this method, the dissociation of N1 (3 gases is not sufficient and the generation of N'', N2'' ions is small, so Si:
+Na film growth rate is about 400 to 700 people/min.
ＥＣＲプラズマ法は、マイクロ波を使用してプラズマ励
起し、このプラズマガス中の電子をサイクロトロン共鳴
させて加速し、低圧で高密度のプラズマを得ようとする
ものである。ガスの解離率が非常に大きいため、水素結
合をもったスピーシーズが少なくなり、良好なＳｉ３Ｎ
４膜を形成することが出来る。The ECR plasma method aims to obtain a low-pressure, high-density plasma by exciting plasma using microwaves and accelerating electrons in the plasma gas by causing cyclotron resonance. Since the dissociation rate of gas is very high, there are fewer species with hydrogen bonds, resulting in a good Si3N
4 films can be formed.
従来例によると、ガスとして四弗化シリコン（ＳｉＦｔ
）あるいはモノシラ７（Ｓｉｌｔ）とＮ２を用い、Ｓｉ
基板温度２５０℃で、圧力８ Ｘｌ０−’ Ｔｏｒｒで
５ｉＪ４膜を成長速度約３７５人／ｍｉｎで形成するも
のであるが、膜成長速度が余り速いとは言えず、この点
の改善が望まれている。According to the conventional example, silicon tetrafluoride (SiFt
) or using monosilica 7 (Silt) and N2.
A 5iJ4 film is formed at a substrate temperature of 250°C and a pressure of 8 Xl0-' Torr at a growth rate of about 375 people/min, but the film growth rate cannot be said to be very fast, and improvements in this point are desired. There is.
本発明は、従来例における膜成長速度をあげるとともに
、下部Ｓｔ基板に与える内部応力の小さく、且つ緻密な
Ｓｉ３Ｎ４膜を形成しようとするものである。The present invention aims to increase the film growth rate in the conventional example and to form a dense Si3N4 film with less internal stress applied to the lower St substrate.
上記問題点の解決は、電子サイクロトロン共鳴プラズマ
発生室（１）と、この電子サイクロトロン共鳴プラズマ
発生室（１）に隣接する反応室（２）と、前記電子サイ
クロトロン共鳴プラズマ発生室（１）にマイクロ波電力
およびガスを導入する手段と、前記反応室（２）にガス
を導入する手段と、前記電子サイクロトロン共鳴プラズ
マ発生室（１）内に導入したガスに電子サイクロトロン
共鳴プラズマ（Ｒ１）を発生させ、この電子サイクロト
ロン共鳴プラズマ（Ｒ１）を発散磁界により前記反応室
（２）に引き出し、前記反応室（２）に導入したガスに
プラズマ（Ｒ２）を発生させる手段とを備えて構成され
た薄膜形成装置を用いる薄膜形成方法において、
前記反応室（２）内で、半導体基板の表面（５）を室温
から１００℃の範囲の温度に保ち、前記電子サイクロト
ロン共鳴プラズマ発生室（１）に窒素ガスを導入し、反
応室（２）にはジシラン或いはトリシランを導入して、
これにより発生したプラズマ（Ｒ２）により、前記半導
体基板（５）の表面に窒化シリコン膜を形成させる工程
を有する本発明による薄膜形成方法により達成される。The solution to the above problem is to provide an electron cyclotron resonance plasma generation chamber (1), a reaction chamber (2) adjacent to the electron cyclotron resonance plasma generation chamber (1), and a microelectronic cyclotron resonance plasma generation chamber (1). means for introducing wave power and gas; means for introducing gas into the reaction chamber (2); and generating electron cyclotron resonance plasma (R1) in the gas introduced into the electron cyclotron resonance plasma generation chamber (1). , means for drawing out this electron cyclotron resonance plasma (R1) into the reaction chamber (2) by a divergent magnetic field and generating plasma (R2) in the gas introduced into the reaction chamber (2). In the thin film forming method using the apparatus, the surface (5) of the semiconductor substrate is maintained at a temperature in the range of room temperature to 100°C in the reaction chamber (2), and nitrogen gas is supplied to the electron cyclotron resonance plasma generation chamber (1). and introducing disilane or trisilane into the reaction chamber (2),
This is achieved by the thin film forming method according to the present invention, which includes the step of forming a silicon nitride film on the surface of the semiconductor substrate (5) using the plasma (R2) generated thereby.
本発明による発散磁界型ＥＣＲプラズマ装置を用い、ジ
シラン（ＳｉＪ６）又はトリシラン（ＳｉｚＨ６）ガス
とＮ２ガスによるプラズマで半導体基板上に５ｉ３Ｎａ
膜を形成するもので、低ストレスで良質な膜を高い成長
速度で形成することが出来る。Using the diverging magnetic field type ECR plasma device according to the present invention, 5i3Na is deposited on a semiconductor substrate using plasma using disilane (SiJ6) or trisilane (SizH6) gas and N2 gas.
It forms a film, and can form a high-quality film at a high growth rate with low stress.
第１図は本発明におけるＳｉ＋Ｎａ膜形成に用いた発散
磁界型ＥＣＲプラズマ装置の構成概略図である。FIG. 1 is a schematic diagram of the configuration of a divergent magnetic field type ECR plasma apparatus used for forming a Si+Na film in the present invention.
この図において、１はＥＣＲプラズマ発生室で、これに
隣接して反応室２が設けられ、この反応室２には排気系
として、ターボモレキュラーポンプ１５、メカニカルブ
ースフポンプ１６、ウォータポンプ１７の主排気系が設
けられ残留不純物ガスおよび膜形成時に導入されるガス
を排気している。In this figure, reference numeral 1 denotes an ECR plasma generation chamber, and a reaction chamber 2 is provided adjacent to this, and this reaction chamber 2 has a turbo molecular pump 15, a mechanical boost pump 16, and a water pump 17 as an exhaust system. An exhaust system is provided to exhaust residual impurity gas and gas introduced during film formation.
プラズマ生成用のマイクロ波は、マイクロ波発振器８で
発振した周波数２．４５ ＧＨｚのマイクロ波を導波管
７とマイクロ波導入窓（アルミナ製）９を経由して、共
振寸法に作られたＥＣＲプラズマ発生室１に供給される
。The microwave for plasma generation is a microwave with a frequency of 2.45 GHz oscillated by a microwave oscillator 8. The plasma is supplied to the plasma generation chamber 1.
また、マイクロ波導入窓９に近い部分の導波管７の外周
およびＥＣＲプラズマ発生室１の外周には電磁石コイル
６があり、これにより発散磁界を形成さす。Further, an electromagnetic coil 6 is provided on the outer periphery of the waveguide 7 near the microwave introduction window 9 and on the outer periphery of the ECR plasma generation chamber 1, thereby forming a diverging magnetic field.
磁束密度の大きさは共鳴の起こる値８７５ ガウスよ
り少し大きい値からマイクロ波の進む方向に徐々に減少
するようにして、マイクロ波の吸収効率を上げている。The magnitude of the magnetic flux density is gradually decreased from a value slightly larger than 875 Gauss, at which resonance occurs, in the direction in which the microwave advances, thereby increasing the microwave absorption efficiency.
ＥＣＲプラズマ発生室１には第１のガス導入口３よりガ
スを導入している。Gas is introduced into the ECR plasma generation chamber 1 through a first gas introduction port 3.
また、反応室２にはＳｉ基板５が基板載置台１２の上に
おかれ、基板表面の温度が急上昇しないようにされてい
る。Further, a Si substrate 5 is placed on a substrate mounting table 12 in the reaction chamber 2 to prevent the temperature of the substrate surface from rising rapidly.
この発散磁界型ＥＣＲプラズマ装置によるときは、発散
磁界のためプラズマ流中の電子やイオンが磁束線に垂直
線方向に散逸するのを防止されているので、プラズマ流
は反応室２の側壁等への衝突なしにＳｉ基板５に達する
ので、側壁への衝突による水分、不純物の発生を少なく
出来る。When using this divergent magnetic field type ECR plasma device, the divergent magnetic field prevents electrons and ions in the plasma flow from dissipating in a direction perpendicular to the magnetic flux lines, so the plasma flow is directed toward the side wall of the reaction chamber 2. Since the particles reach the Si substrate 5 without any collision, the generation of moisture and impurities due to collisions with the side walls can be reduced.
Ｓｉ３Ｎ、膜成長はこの装置を使用して、次のようにし
て行われる。The Si3N film is grown using this apparatus in the following manner.
Ｓｉ基板５を室温〜１００℃にし、圧力をｌＸｌ０−”
Ｔｏｒｒにして、第１のガス導入口３よりはＮ２ガスを
２３ ｃｃ ／ｓｅｃの流量でＥＣＲプラズマ発生室１
に導入し、第２のガス導入口４からはＳｉ２Ｈ６ガスを
３０ ｃｃ ／ｓｅｃの流量で反応室２に導入する。電
磁石コイル６に電流を流し磁界を形成して２．４５ＧＨ
ｚのマイクロ波電力 ５００Ｗをかける。The Si substrate 5 is heated to room temperature to 100°C, and the pressure is set to lXl0-"
Torr, N2 gas is supplied to the ECR plasma generation chamber 1 from the first gas inlet 3 at a flow rate of 23 cc/sec.
Si2H6 gas is introduced into the reaction chamber 2 from the second gas inlet 4 at a flow rate of 30 cc/sec. A current is passed through the electromagnetic coil 6 to form a magnetic field of 2.45GH.
Apply 500W of microwave power to z.
導入したＮ２ガスはプラズマ化し、ＥＣＲプラズマＲ１
となり、発散磁界によって反応室２との境界にあるアパ
ーチャ１０を通過し、反応室２に引き出されれ、ここで
ＳｉＪ、ガスをプラズマ（Ｒ２）化し、プラズマＲ１と
Ｒ２のプラズマ流によりＳｉ基板５の表面上にＳｉ３Ｎ
、膜が形成される。The introduced N2 gas turns into plasma and becomes ECR plasma R1.
It passes through the aperture 10 at the boundary with the reaction chamber 2 by the divergent magnetic field and is drawn out to the reaction chamber 2, where the SiJ gas is turned into plasma (R2), and the plasma flow of the plasmas R1 and R2 forms the Si substrate 5. Si3N on the surface
, a film is formed.
この場合、発散磁界のみでプラズマ流を制御しているの
で、Ｓｉ基板５はプラズマに対して約２０Ｖの浮遊電位
分だけの負電位となるだけであるため、イオン衝撃がな
くＳｉ基板５を傷めることがない。In this case, since the plasma flow is controlled only by the divergent magnetic field, the Si substrate 5 has only a negative potential of about 20 V floating potential with respect to the plasma, so there is no ion bombardment and damage to the Si substrate 5. Never.
ＲＦプラズマ法で、５ｉＨｎの替わりに５ｉｔＨｂガス
を用いてＳｉＪ＊膜形成を行おうとしても、アモルファ
スシリコンとなり良好なＳｔＪ、膜を得ることが出来な
い。Even if an attempt is made to form a SiJ* film using 5itHb gas instead of 5iHn using the RF plasma method, it becomes amorphous silicon and a good StJ film cannot be obtained.
第２図は本発明におけるマイクロ波電力とストレスとの
関係図である。FIG. 2 is a diagram showing the relationship between microwave power and stress in the present invention.
この図において、縦軸はストレス（圧縮応力）で、横軸
はマイクロ波の入射電力で、形成５ｉＪ４膜が下層に及
ぼすストレスがマイクロ波電力によって、どのように変
化するかを示すもので、フラットネステスターを用いて
定量した。In this figure, the vertical axis is stress (compressive stress) and the horizontal axis is microwave incident power, which shows how the stress exerted on the underlying layer by the formed 5iJ4 film changes depending on the microwave power. It was quantified using a nest tester.
マイクロ波電力を５００Ｗ程度としたとき最もストレス
が小さく約１．８ Ｘｌ０９ｄｙｎｅ／ｃｍ２の圧縮応
力で、ＲＦプラズマ法で形成した場合より、格段に小さ
くなる。これにより、Ｓｉ、Ｎ４膜の下にＡＩ膜層があ
っても、このへ１膜層に障害が起こることがなくなる。When the microwave power is about 500 W, the stress is the smallest, about 1.8 Xl09dyne/cm2, which is much smaller than when formed by the RF plasma method. As a result, even if there is an AI film layer under the Si or N4 film, failure will not occur in the first film layer.
又、ストレスが０と云う状態も条件によっては、見出す
ことが可能である。Also, depending on the conditions, it is possible to find a state where stress is 0.
第３図は本発明におけるマイクロ波電力と成長速度およ
び屈折率の関係図である。FIG. 3 is a diagram showing the relationship between microwave power, growth rate, and refractive index in the present invention.
この図において、左側縦軸は成長速度、右側縦軸は屈折
率、横軸はマイクロ波電力である。In this figure, the left vertical axis is the growth rate, the right vertical axis is the refractive index, and the horizontal axis is the microwave power.
屈折率は５ｉＪ４膜の膜質を示す指標で２．０程度のと
き、緻密で耐湿性の優れた良好な膜が得られる。即ち、
赤外線吸収スペクトルで確認した所、この程度の屈折率
の場合、水素の含有（Ｓ ｉ ＩＩの存在）は殆ど認め
られなくなり、ストレスの小さい、耐湿性の良好な膜を
形成する。The refractive index is an index indicating the film quality of the 5iJ4 film, and when it is about 2.0, a good film that is dense and has excellent moisture resistance can be obtained. That is,
As confirmed by infrared absorption spectrum, when the refractive index is at this level, hydrogen content (presence of S i II) is hardly recognized, and a film with low stress and good moisture resistance is formed.
５ｉｚＨｂ：３０ ｃｃ ／ｓｅｃ ％ Ｎｚ： ２３
ｃｃ ／ｓｅｃ 、マイクロ波型カニ５００Ｗの場合
、屈折率 ２．０、成長速度約１０００人／ｍｉｎ と
なる。5izHb: 30 cc/sec% Nz: 23
cc/sec, microwave type crab 500W, the refractive index is 2.0, and the growth rate is about 1000 people/min.
５ｉｚＨ６は解離率がＳｉシのそれよりも大きいため、
膜成長速度が大となるものめである。Since the dissociation rate of 5izH6 is higher than that of Si,
This is the one that increases the film growth rate.
上記の５ｉＪ６の替わりに５ｉ３Ｈ，を用いてＳｉ３Ｎ
。Using 5i3H instead of 5iJ6 above, Si3N
.
膜を形成すると、５ｉＪｓは更に解離率が高いので〆防
テ、膜成長速度が更に大きい良質な膜を得ることが出来
る。When a film is formed, since 5iJs has a higher dissociation rate, it is possible to obtain a high-quality film with a higher film growth rate.
実施例は、Ｓｉ基板上へのＳｉ３Ｎ４膜形成について説
明したが半導体基板が他の材質の基板であって〔発明の
効果〕
以上詳細に説明したように、本発明によれば、ストレス
の小さい、汚染の少ない、緻密な、耐湿性の良好な、＾
１パターン上のパンシベーション膜として最適な５ｉ３
Ｎａ膜を高速に形成することが出来る。Although the embodiment describes the formation of a Si3N4 film on a Si substrate, the semiconductor substrate is a substrate made of another material. [Effects of the Invention] As explained in detail above, according to the present invention, the formation of a Si3N4 film on a Si substrate can be performed with low stress. Less contamination, dense, and good moisture resistance ^
5i3 is optimal as a pansivation film on one pattern
A Na film can be formed at high speed.
第１図は本発明におけるＳｉ３Ｎ４膜形成に用いた発散
磁界型ＥＣＲプラズマ装置の構成概略図、第２図は本発
明におけるマイクロ波電力とストレスとの関係図、
第３図は本発明におけるマイクロ波電力と成長速度およ
び屈折率の関係図である。
これら図において、
１はＥＣＲプラズマ発生室、
２は反応室、
３は第１のガス導入口、
４は第２のガス導入口、
５は半導体基板（Ｓｔ基板）、
６は電磁石コイル、
７は導波管、
８はマイクロ波発振器、
９はマイクロ波導入窓、
１０はアパーチャ、
１１はプラズマシャッタ、
１２は基板載置台、
１３はロードロッカー！、
１４はロークリポンプ、
１５はターボモレキュラーポンプ、
１６はメカニカルブースタポンプ、
１７はウォータポンプ、
Ｒ１は電子サイクロトロン共鳴（ＥＣＲ）プラズマ、
Ｒ２はプラズマ
ん 胞λｌ刀゛又妥入口 １３．ロー
トパ口・・Ｉカー１８開！１８Ｇ３−５００２８（５）
マイクＯ汝電力 （Ｗ）
＃廃コ日月１てあ１ブる７４り０３反電力とストレスに
の１１ ｓ ２ａ
・：：すＡ四
長
５５ｉ１４反 １４；ロータ
゛ノボンア６ ： 電私石］イル
１５； ターホ′モレＡ−ＬラーオＳンフ０９ ：
マイクロ３ｇ導入熱（アルミｆ）１１月（二カ・１する
５ｒ ３ Ｎ＋ハ更）Ｘ２．戊に用し１丁に、４さ、歎
私恩代贋。
ηｂ
度
〜ｉｒ＋ ２１尿−七・
町Fig. 1 is a schematic diagram of the configuration of a divergent magnetic field type ECR plasma apparatus used for forming the Si3N4 film in the present invention, Fig. 2 is a diagram showing the relationship between microwave power and stress in the present invention, and Fig. 3 is a diagram showing the relationship between microwave power and stress in the present invention. FIG. 3 is a relationship diagram between electric power, growth rate, and refractive index. In these figures, 1 is an ECR plasma generation chamber, 2 is a reaction chamber, 3 is a first gas inlet, 4 is a second gas inlet, 5 is a semiconductor substrate (St substrate), 6 is an electromagnetic coil, and 7 is an electromagnetic coil. Waveguide, 8 is a microwave oscillator, 9 is a microwave introduction window, 10 is an aperture, 11 is a plasma shutter, 12 is a substrate mounting table, 13 is a load locker! , 14 is a rotary pump, 15 is a turbo molecular pump, 16 is a mechanical booster pump, 17 is a water pump, R1 is an electron cyclotron resonance (ECR) plasma, and R2 is a plasma cell λl sword and an inlet 13. Rotopa mouth...I car 18 openings! 18G3-50028 (5) Microphone O thy power (W) electric private stone] il
15; Taho'more A-L Rao S Nhu 09:
Micro 3g introduction heat (aluminum f) November (2.1 5r 3 N + ha) X2. I used it for the first time, and it was 4 times, so I paid for it. ηb degree~ir+ 21 urine-7・town
Claims (1)
接する反応室（２）と、 前記電子サイクロトロン共鳴プラズマ発生室（１）にマ
イクロ波電力およびガスを導入する手段と、 前記反応室（２）にガスを導入する手段と、前記電子サ
イクロトロン共鳴プラズマ発生室（１）内に導入したガ
スに電子サイクロトロン共鳴プラズマ（Ｒ１）を発生さ
せ、この電子サイクロトロン共鳴プラズマ（Ｒ１）を発
散磁界により前記反応室（２）に引き出し、前記反応室
（２）に導入したガスにプラズマ（Ｒ２）を発生させる
手段とを備えて構成された薄膜形成装置を用いる薄膜形
成方法において、 前記反応室（２）内で、半導体基板の表面（５）を室温
から１００℃の範囲の温度に保ち、 前記電子サイクロトロン共鳴プラズマ発生室（１）に窒
素ガスを導入し、反応室（２）にはジシラン或いはトリ
シランを導入して、これにより発生したプラズマ（Ｒ２
）により、前記シリコン基板（５）の表面に窒化半導体
膜を形成させる工程を 有することを特徴とする薄膜形成方法。[Claims] An electron cyclotron resonance plasma generation chamber (1), a reaction chamber (2) adjacent to the electron cyclotron resonance plasma generation chamber (1), and a microwave injected into the electron cyclotron resonance plasma generation chamber (1). means for introducing electric power and gas; means for introducing gas into the reaction chamber (2); generating electron cyclotron resonance plasma (R1) in the gas introduced into the electron cyclotron resonance plasma generation chamber (1); A thin film forming apparatus comprising means for drawing out this electron cyclotron resonance plasma (R1) into the reaction chamber (2) using a divergent magnetic field and generating plasma (R2) in the gas introduced into the reaction chamber (2). In the thin film forming method using the method, the surface (5) of the semiconductor substrate is kept at a temperature in the range of room temperature to 100°C in the reaction chamber (2), and nitrogen gas is introduced into the electron cyclotron resonance plasma generation chamber (1). Disilane or trisilane is introduced into the reaction chamber (2), and the plasma generated thereby (R2
) A method for forming a thin film, comprising the step of forming a nitride semiconductor film on the surface of the silicon substrate (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19462686A JPS6350028A (en) | 1986-08-20 | 1986-08-20 | Formation of thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19462686A JPS6350028A (en) | 1986-08-20 | 1986-08-20 | Formation of thin-film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6350028A true JPS6350028A (en) | 1988-03-02 |
Family
ID=16327643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19462686A Pending JPS6350028A (en) | 1986-08-20 | 1986-08-20 | Formation of thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350028A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6372304B1 (en) * | 1996-07-10 | 2002-04-16 | Suzuki Motor Corporation | Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS5933837A (en) * | 1982-08-19 | 1984-02-23 | Nippon Telegr & Teleph Corp <Ntt> | Formation of insulating film onto surface of semiconductor device |
| JPS60115235A (en) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Formimg method of insulation film on compound semiconductor substrate |
| JPS61166975A (en) * | 1985-01-16 | 1986-07-28 | Anelva Corp | Formation of film |
-
1986
- 1986-08-20 JP JP19462686A patent/JPS6350028A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS5933837A (en) * | 1982-08-19 | 1984-02-23 | Nippon Telegr & Teleph Corp <Ntt> | Formation of insulating film onto surface of semiconductor device |
| JPS60115235A (en) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Formimg method of insulation film on compound semiconductor substrate |
| JPS61166975A (en) * | 1985-01-16 | 1986-07-28 | Anelva Corp | Formation of film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6372304B1 (en) * | 1996-07-10 | 2002-04-16 | Suzuki Motor Corporation | Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD |
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