JPS6344765A - シヨツトキ注入電極型サイリスタ - Google Patents

シヨツトキ注入電極型サイリスタ

Info

Publication number
JPS6344765A
JPS6344765A JP9604887A JP9604887A JPS6344765A JP S6344765 A JPS6344765 A JP S6344765A JP 9604887 A JP9604887 A JP 9604887A JP 9604887 A JP9604887 A JP 9604887A JP S6344765 A JPS6344765 A JP S6344765A
Authority
JP
Japan
Prior art keywords
region
semiconductor region
injected
anode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9604887A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0230592B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
潤一 西澤
Tadahiro Omi
忠弘 大見
Keishiro Takahashi
敬四郎 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP9604887A priority Critical patent/JPS6344765A/ja
Publication of JPS6344765A publication Critical patent/JPS6344765A/ja
Publication of JPH0230592B2 publication Critical patent/JPH0230592B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
JP9604887A 1987-04-17 1987-04-17 シヨツトキ注入電極型サイリスタ Granted JPS6344765A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9604887A JPS6344765A (ja) 1987-04-17 1987-04-17 シヨツトキ注入電極型サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9604887A JPS6344765A (ja) 1987-04-17 1987-04-17 シヨツトキ注入電極型サイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15338879A Division JPS5676574A (en) 1979-11-26 1979-11-26 Schottky injection electrode type semiconductor device

Publications (2)

Publication Number Publication Date
JPS6344765A true JPS6344765A (ja) 1988-02-25
JPH0230592B2 JPH0230592B2 (enrdf_load_stackoverflow) 1990-07-06

Family

ID=14154583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9604887A Granted JPS6344765A (ja) 1987-04-17 1987-04-17 シヨツトキ注入電極型サイリスタ

Country Status (1)

Country Link
JP (1) JPS6344765A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357769A (en) * 1976-11-04 1978-05-25 Mitsubishi Electric Corp Electrostatic induction transistor
JPS54106176A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Field effect switching element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357769A (en) * 1976-11-04 1978-05-25 Mitsubishi Electric Corp Electrostatic induction transistor
JPS54106176A (en) * 1978-02-08 1979-08-20 Hitachi Ltd Field effect switching element

Also Published As

Publication number Publication date
JPH0230592B2 (enrdf_load_stackoverflow) 1990-07-06

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