JPS6344758A - Solid state image sensor - Google Patents
Solid state image sensorInfo
- Publication number
- JPS6344758A JPS6344758A JP61189073A JP18907386A JPS6344758A JP S6344758 A JPS6344758 A JP S6344758A JP 61189073 A JP61189073 A JP 61189073A JP 18907386 A JP18907386 A JP 18907386A JP S6344758 A JPS6344758 A JP S6344758A
- Authority
- JP
- Japan
- Prior art keywords
- region
- soi
- photodiode
- laser beam
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000003384 imaging method Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000007261 regionalization Effects 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ビデオカメラや監視用カメラ等に用いること
ができる固体撮像装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a solid-state imaging device that can be used in video cameras, surveillance cameras, and the like.
従来の技術
近年、固体撮像装置は、ビデオテープンコーダ（ＶＴＲ
）の普及とともに、開発が盛んに進められている。現在
までに開発され、商品化されている固体撮像装置には多
くの種類がある。ＭＯＳ型やＣＰＤ型は、ＣＣＤ型に比
較すると、ダイナミックレンジが広い、残像がないなど
の大きな特徴を持っている。しかしながら、スミア特性
においてはあまり満足できる結果が得られてぃなかった
。BACKGROUND OF THE INVENTION In recent years, solid-state imaging devices have been developed using video tape coders (VTRs).
) is becoming more popular, and its development is progressing actively. There are many types of solid-state imaging devices that have been developed and commercialized to date. Compared to the CCD type, the MOS type and CPD type have major features such as a wider dynamic range and no afterimage. However, very satisfactory results were not obtained in terms of smear characteristics.
そこで、このスミア特性改善のために、受光部のホトダ
イオードからの読み出しスイッチを従来のＭＯＳＦＥＴ
から、ソース領域をホトダイオードに接しかつチャネル
とドレイン領域をフィールド酸化膜上に形成するＳＯＩ
・ＴＰＴに変えることにより、ドレイン領域をシリコン
基板から絶縁分離するという画素構造が考えらｎている
。Therefore, in order to improve this smear characteristic, the readout switch from the photodiode in the light receiving section was replaced with a conventional MOSFET.
From the SOI layer, the source region is in contact with the photodiode and the channel and drain regions are formed on the field oxide film.
- A pixel structure is being considered in which the drain region is insulated and separated from the silicon substrate by changing to TPT.
以下、図面を参照しながら、上述したような従来の固体
撮像装置について説明する。Hereinafter, a conventional solid-state imaging device as described above will be described with reference to the drawings.
第３図は従来の固体撮像装置の画素構造の平面図に示す
ものである。第３図において、１はホトダイオード、２
はＳＯＩ膜、３は読み出しゲート、４は信号線、５はコ
ンタクトホール、６は粒界、了ｊｄ Ｌ／−ザビームを
示している。この構成でばＳＯＩ膜２はホトダイオード
１の領域をシード領域としてレーザビーム照射によりラ
テラルシードエピタキシーを行って得られている。そし
てＳＯＸＯ２Ｏ３に読み出しスイｙテ用のＳＯＩ・ＴＦ
Ｔが形成されている。FIG. 3 is a plan view of a pixel structure of a conventional solid-state imaging device. In Fig. 3, 1 is a photodiode, 2
is an SOI film, 3 is a readout gate, 4 is a signal line, 5 is a contact hole, 6 is a grain boundary, and the beam is shown. In this configuration, the SOI film 2 is obtained by performing lateral seed epitaxy by laser beam irradiation using the area of the photodiode 1 as a seed region. And SOI/TF for readout to SOXO2O3
A T is formed.
発明が解決しようとする問題点
しかしながら、上記のような構成では、ポリシリコン膜
がシード領域からレーザビーム走査方向に単結晶となり
成長するが、レーザビーム照射により再結晶化しても、
シード領域全レーザビーム走査方向に延長した範囲しか
良質のＳＯＩ膜はできない。すなわちＴＰＴのチャネル
の一部やドレイン領域となる部分には、多数の粒界７が
発生する。そのため、ＳＯＩ・ＴＰＴのトランスコンダ
クタンス（ｇｍ ）が劣化し、またそれを一様に制御す
ることも困難なので、固体撮像装置の固定バタン雑音の
原因となる。また、粒界全通してのソース・ドレインの
ドーパントの拡散によりＳＯＩ・ＦＥＴがソース・ドレ
イン間でリーク電流不良を起こすなどの欠点全有してい
た。Problems to be Solved by the Invention However, in the above configuration, the polysilicon film grows as a single crystal from the seed region in the laser beam scanning direction, but even if it is recrystallized by laser beam irradiation,
A good quality SOI film can only be formed in the entire seed region extending in the laser beam scanning direction. That is, a large number of grain boundaries 7 are generated in a portion of the TPT channel and a portion that will become the drain region. Therefore, the transconductance (gm) of the SOI/TPT deteriorates, and it is also difficult to uniformly control it, which causes fixed bang noise in the solid-state imaging device. In addition, the SOI FET has many drawbacks such as leakage current failure between the source and drain due to the diffusion of dopants in the source and drain throughout the grain boundaries.
本発明は上記欠点に鑑み、良質のＳＯＸ膜中にＴＦＴ’
ｉ形成することができ、スミアの発生がなく、かつＳＯ
Ｉ・ＴＦＴのｇｍの違いによる固定バタン雑音の発生の
ない固体撮像装置全提供するものである。In view of the above-mentioned drawbacks, the present invention has developed a TFT' in a high-quality SOX film.
i can be formed, there is no smear, and SO
The present invention provides a solid-state imaging device that does not generate fixed bang noise due to differences in gm of I/TFTs.
問題点全解決するための手段
上記問題点全解決するために、本発明の固体撮像装置は
、ホトダイオードが読み出しゲートと信号線との交叉点
の近傍部に切り欠き部全有して形成され、前記ホトダイ
オードから信号音読み出すための読み出しスイッチとし
てはたら（ＳＯＩ・ＴＦＴのチャネル部が、前記切り欠
き部に形成された単結晶薄膜内に形成された画素構造か
ら構成されている。Means for Solving All the Problems In order to solve all of the above problems, the solid-state imaging device of the present invention is such that the photodiode is formed with the entire notch in the vicinity of the intersection of the readout gate and the signal line, It serves as a readout switch for reading out a signal sound from the photodiode (the channel portion of the SOI TFT is composed of a pixel structure formed within the single crystal thin film formed in the notch portion).
作用
この構成によれば、レーザビームはシード部からＴＦＴ
のチャネル部まで一直線に走査できるため、ラテラルシ
ードエピタキシーによって７一ド部から単結晶を成長さ
せた良質のＳＯＩ膜中の中央部にＴＰＴのチャネルが形
成できる。このため、このＳ○工模膜中形成されるＴＰ
Ｔのチャネル部には粒界は全くなく、ｇｍのバラツキも
なくなり。According to this configuration, the laser beam is transmitted from the seed portion to the TFT.
Since the TPT channel can be scanned in a straight line up to the channel part, a TPT channel can be formed in the center of a high-quality SOI film in which a single crystal is grown from the 7-dot part by lateral seed epitaxy. For this reason, the TP formed in this S○
There are no grain boundaries in the channel part of T, and there is no variation in gm.
固定バタン雑音は除去できる。もちろん、ドレインは絶
縁膜上に形成されているので、スミアは全く発生しない
。Fixed bang noise can be removed. Of course, since the drain is formed on the insulating film, no smear occurs at all.
実施例
以下、本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の実施例における固体撮像装置の単位画
素の平面図を示すものである。第１図において、１はホ
トダイオード、２ばＳＯ工膜、３は読み出しゲート、４
は信号線、６はコンタクトホール、７はレーザビームで
ある。FIG. 1 shows a plan view of a unit pixel of a solid-state imaging device in an embodiment of the present invention. In FIG. 1, 1 is a photodiode, 2 is an SO film, 3 is a readout gate, and 4 is a photodiode.
6 is a signal line, 6 is a contact hole, and 7 is a laser beam.
製作プロセスを簡単に説明すると、まず、０．６μｍ程
度の厚さのＬＯＧＯＳ酸化膜を形成し、ホトダイオード
領域１（つまりシード領域）全定義し、続いて、０．６
μｍ程度の厚さにポリシリコン全全面に堆積する。その
状態での受光部の拡大図を第２図に示す。この状態で、
第２図に示すように、レーザビーム７で走査すると、レ
ーザビームの熱によりポリシリコンは溶融し、再結晶化
する０ホトダイオード１は種結晶になり、ＬＯＧＯ３酸
化膜上にも、シードからレーザ走査方向に単結晶が成長
する。従って、第２図に示す領域大には、粒界が全くな
い良質のＳＯ工膜が形成できる。その後に、従来のＭＯ
Ｓプロセスで第１図に示すようにバタン形成すると、Ｓ
ＯＩ・ＴＦＴのチャネル部は、第２図の領域大の中央部
の領域已に形成さ几る。従って、このような画素構造に
すればＳＯＩ・ＴＰＴのチャネル部には粒界がないため
ｇｍの変化は非常に小さく、固定バタン雑音は発生しな
い。また、粒界に起因したソース・ドレイン間のリーク
電流不良もない。もちろん、従来の画素構造と同じく、
スミアの発生もない。To briefly explain the manufacturing process, first, a LOGOS oxide film with a thickness of about 0.6 μm is formed, the entire photodiode region 1 (that is, the seed region) is defined, and then a 0.6 μm thick LOGOS oxide film is formed.
It is deposited on the entire surface of polysilicon to a thickness of about μm. FIG. 2 shows an enlarged view of the light receiving section in this state. In this state,
As shown in Figure 2, when scanning with the laser beam 7, the polysilicon is melted by the heat of the laser beam, and the recrystallized 0 photodiode 1 becomes a seed crystal, and the LOGO3 oxide film is also scanned with the laser beam from the seed. A single crystal grows in the direction. Therefore, a high-quality SO film having no grain boundaries can be formed in the large area shown in FIG. 2. After that, the conventional MO
When a baton is formed in the S process as shown in Figure 1, S
The channel portion of the OI/TFT is formed across the central area of the area shown in FIG. Therefore, with such a pixel structure, since there are no grain boundaries in the SOI/TPT channel portion, the change in gm is very small, and fixed bang noise does not occur. Furthermore, there is no leakage current defect between the source and drain due to grain boundaries. Of course, like the conventional pixel structure,
No smear occurs.
発明の効果
以上のように本発明は、ＳＯＩ、ＴＰＴのチャネル領域
が、シード領域からレーザ走査方向に成長した単結晶薄
膜領域のほぼ中央に形成できる画素構造になっているた
め、ＳＯＩ・ＴＦＴのｇｍの均一性は非常によく、固定
バタン雑音の発生はなく、ソース・ドレイン間のリーク
電流不良もなく、かつドレインがシリコン基板から絶縁
分離されて形成されているので、スミアの発生も全くな
くすることができ、その実用的効果は犬なるものがある
。Effects of the Invention As described above, the present invention has a pixel structure in which the channel region of SOI/TPT can be formed approximately at the center of the single crystal thin film region grown from the seed region in the laser scanning direction. The gm uniformity is very good, there is no fixed bang noise, there is no leakage current defect between the source and drain, and since the drain is formed insulated from the silicon substrate, there is no smear at all. It can be done, and its practical effects are similar to that of a dog.
第１図に本発明の一実施例における固体撮像装置の画素
の構造の平面図、第２図はラテラルシードエピタキシー
による再結晶化での単結晶領域分布図、第３図は従来の
固体撮像装置の画素構造の平面図である。
１・・・・・・ホトダイオード、２・・・・・・ＳＯＩ
膜、ｓ・・・・・・読み出しゲート、４・・・・・・信
号線、７・・・・・・レーザビーム。
イ惚人の氏名 弁理士 中 尾 敏 男 ほか１名３−
−−あそ妙妃しケート
−１−−−１１！ｊ足
５・−コン７９４丁、−ル
Ｇ−ｍ−粒界
７−゛レープ゛じ−４
ば）
堵
）！Ｊ５Fig. 1 is a plan view of the pixel structure of a solid-state imaging device according to an embodiment of the present invention, Fig. 2 is a single crystal region distribution diagram in recrystallization by lateral seed epitaxy, and Fig. 3 is a conventional solid-state imaging device. FIG. 3 is a plan view of the pixel structure of FIG. 1...Photodiode, 2...SOI
Film, s...readout gate, 4...signal line, 7...laser beam. Name of the person in love: Patent attorney Toshio Nakao and 1 other person3-
--Aso Myohi Kate-1---11! j leg 5 - con 794 teeth, - le G - m - grain boundary 7 - crepe j - 4 b) t)! J5
Claims (1)
み出すため読み出しスイッチとなるＳＯＩ・ＦＥＴと、
読み出しゲートと、信号線とをそなえ、前記ホトダイオ
ードが前記読み出しゲートと前記信号線との交叉点の近
傍部に切り欠き部を有し、前記切り欠き部に形成された
単結晶膜内に前記ＳＯＩ・ＦＥＴのチャネル部が形成さ
れていることを特徴とする固体撮像装置。a photodiode, an SOI FET that serves as a readout switch for reading out signals from the photodiode;
The photodiode includes a readout gate and a signal line, the photodiode has a cutout near the intersection of the readout gate and the signal line, and the SOI is formed in the single crystal film formed in the cutout. - A solid-state imaging device characterized by having an FET channel section formed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61189073A JPH0734465B2 (en) | 1986-08-12 | 1986-08-12 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61189073A JPH0734465B2 (en) | 1986-08-12 | 1986-08-12 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6344758A true JPS6344758A (en) | 1988-02-25 |
| JPH0734465B2 JPH0734465B2 (en) | 1995-04-12 |
Family
ID=16234851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61189073A Expired - Lifetime JPH0734465B2 (en) | 1986-08-12 | 1986-08-12 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0734465B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57108363U (en) * | 1980-12-24 | 1982-07-03 | ||
| JPS60165878A (en) * | 1984-02-09 | 1985-08-29 | Matsushita Electronics Corp | Solid-state image pickup element |
-
1986
- 1986-08-12 JP JP61189073A patent/JPH0734465B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57108363U (en) * | 1980-12-24 | 1982-07-03 | ||
| JPS60165878A (en) * | 1984-02-09 | 1985-08-29 | Matsushita Electronics Corp | Solid-state image pickup element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0734465B2 (en) | 1995-04-12 |
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