JPS6341451B2 - - Google Patents

Info

Publication number
JPS6341451B2
JPS6341451B2 JP56032616A JP3261681A JPS6341451B2 JP S6341451 B2 JPS6341451 B2 JP S6341451B2 JP 56032616 A JP56032616 A JP 56032616A JP 3261681 A JP3261681 A JP 3261681A JP S6341451 B2 JPS6341451 B2 JP S6341451B2
Authority
JP
Japan
Prior art keywords
transistor
field effect
circuit
effect transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56032616A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56138335A (en
Inventor
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3261681A priority Critical patent/JPS56138335A/ja
Publication of JPS56138335A publication Critical patent/JPS56138335A/ja
Publication of JPS6341451B2 publication Critical patent/JPS6341451B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP3261681A 1981-03-09 1981-03-09 Integrated circuit Granted JPS56138335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3261681A JPS56138335A (en) 1981-03-09 1981-03-09 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3261681A JPS56138335A (en) 1981-03-09 1981-03-09 Integrated circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12060572A Division JPS5631744B2 (en:Method) 1972-12-04 1972-12-04

Publications (2)

Publication Number Publication Date
JPS56138335A JPS56138335A (en) 1981-10-28
JPS6341451B2 true JPS6341451B2 (en:Method) 1988-08-17

Family

ID=12363782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3261681A Granted JPS56138335A (en) 1981-03-09 1981-03-09 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS56138335A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725743A (en) * 1986-04-25 1988-02-16 International Business Machines Corporation Two-stage digital logic circuits including an input switching stage and an output driving stage incorporating gallium arsenide FET devices
JP3163839B2 (ja) * 1993-05-20 2001-05-08 富士電機株式会社 半導体集積回路
JP4660975B2 (ja) * 2001-06-14 2011-03-30 富士電機システムズ株式会社 高耐圧出力回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211199B1 (en:Method) * 1970-05-27 1977-03-29

Also Published As

Publication number Publication date
JPS56138335A (en) 1981-10-28

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