JPS6340120A - Formation of liquid crystal orientation film - Google Patents
Formation of liquid crystal orientation filmInfo
- Publication number
- JPS6340120A JPS6340120A JP18337886A JP18337886A JPS6340120A JP S6340120 A JPS6340120 A JP S6340120A JP 18337886 A JP18337886 A JP 18337886A JP 18337886 A JP18337886 A JP 18337886A JP S6340120 A JPS6340120 A JP S6340120A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- forming
- island
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 35
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 19
- 239000000057 synthetic resin Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 abstract description 12
- 229920001721 polyimide Polymers 0.000 abstract description 9
- 239000004642 Polyimide Substances 0.000 abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract description 3
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 abstract description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 abstract description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010292 electrical insulation Methods 0.000 abstract description 2
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 229920005575 poly(amic acid) Polymers 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000013077 target material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- DRIUWMIAOYIBGN-UHFFFAOYSA-N lanthanum titanium Chemical compound [Ti][La] DRIUWMIAOYIBGN-UHFFFAOYSA-N 0.000 description 1
- VJPLIHZPOJDHLB-UHFFFAOYSA-N lead titanium Chemical compound [Ti].[Pb] VJPLIHZPOJDHLB-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 210000004303 peritoneum Anatomy 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、液晶表示素子の電極基板上に積層される液晶
配向膜の形成方法だ関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for forming a liquid crystal alignment film laminated on an electrode substrate of a liquid crystal display element.
（従来の技術）
従来、この種の液晶配向膜の形成方法として、例えばポ
リイミド等の電気絶縁性の耐熱性合成樹脂被膜の表面を
ラビング処理する方法が知らｎでいるが、ラビング処理
時に該合成樹脂被膜が剥れ念り、また該合成樹脂被膜の
表面や、こ几を擦する布にダスト等が付着している場合
には、該被膜表面に傷が付いたりし、更にまた大面積の
合成樹脂被膜を一様にラビング処理することが困難であ
るために大面積の液晶配向膜を形成できないという不都
合を有する。(Prior Art) Conventionally, as a method for forming this type of liquid crystal alignment film, a method is known in which the surface of an electrically insulating heat-resistant synthetic resin film such as polyimide is rubbed. If the resin coating peels off, and if dust or the like adheres to the surface of the synthetic resin coating or the cloth used to rub the kettle, the coating surface may be scratched, and a large area may be damaged. Since it is difficult to uniformly rub the synthetic resin coating, there is a disadvantage that a large area liquid crystal alignment film cannot be formed.
（発明が解決しようとする問題点）
前記の不都合を解消する°念めに、本出願人による特願
昭６０６０−１Ｏ７Ｃ号において、電気絶縁性の耐熱性
合成樹脂被膜の表面に誘電体の島状不連続被膜を斜め入
斜スパッタリングによって形成する液晶配向膜の形成方
法が提案されているが、この方法において、より優れ之
液晶配同性を備えｔ液晶配向膜が製造できることが望ま
れる。(Problems to be Solved by the Invention) In order to eliminate the above-mentioned inconvenience, in Japanese Patent Application No. 6060-1O7C by the present applicant, a dielectric island is provided on the surface of an electrically insulating heat-resistant synthetic resin coating. A method for forming a liquid crystal alignment film in which a discontinuous film is formed by oblique sputtering has been proposed, but it is desired that a t-liquid crystal alignment film with even better liquid crystal orientation can be produced using this method.
（問題点を解決するための手段）
本発明者らは、前記提案の液晶配向膜の製°造方法を検
討の結果、得られる液晶の配向性は、誘電体の島状不連
続被膜の形状自体による配向規制もさることながら、誘
電体の分極による影響が非常に大きく、誘電体の分極率
の増加に従って液晶配向性が向上するという知見を得ｔ
０本発明はかかる知見て基づきなさＡ７’Ｃもので、そ
の発明は、電気絶縁性の耐熱性合成樹脂被膜の表面に誘
電体の島状不連続被膜を斜め入斜スパッタリングによっ
て形成する液晶配向膜の形成方法において、該誘電体と
して強誘電体を用いることを特徴とする。(Means for Solving the Problems) As a result of studying the method for manufacturing the liquid crystal alignment film proposed above, the present inventors found that the orientation of the obtained liquid crystal is based on the shape of the island-like discontinuous film of the dielectric material. We obtained the knowledge that in addition to the orientation regulation by the dielectric itself, the influence of the polarization of the dielectric is very large, and that the liquid crystal orientation improves as the polarizability of the dielectric increases.
The present invention is based on such knowledge, and the present invention is a liquid crystal alignment film in which an island-shaped discontinuous dielectric film is formed on the surface of an electrically insulating heat-resistant synthetic resin film by oblique sputtering. The method for forming the semiconductor device is characterized in that a ferroelectric material is used as the dielectric material.
強誘電体の島状不連続被膜を形成する電気絶縁性の耐熱
性合成樹脂としては、ポリイミド、ポリアミド、ポリ尿
素等が挙げられるが、ポリイミドが極めてｇｎｔ高電気
絶縁性、耐熱性並びに電気化学的安定性を有するので好
ましい。The electrically insulating heat-resistant synthetic resin that forms the ferroelectric island-like discontinuous film includes polyimide, polyamide, polyurea, etc., but polyimide has extremely high electrical insulation, heat resistance, and electrochemical properties. It is preferred because it has stability.
島状不連続被膜に形成する強訴１本としては、チタン酸
バリウム、チタン酸鉛、ニオブ酸リチウム、ジルコン醒
チタン酸鉛ランタン、ジルコン酸チタン酸鉛、ランタン
酸チタン酸鉛等に代表される強訴′シ体が用いられる。Examples of the strong substances that form in island-like discontinuous films include barium titanate, lead titanate, lithium niobate, zirconate lead lanthanum titanate, lead zirconate titanate, lead lanthanate titanate, etc. ’ shi type is used.
該島状不連続被膜は前記強誘電体をターゲットとしてこ
れを直接に斜め入斜スパッタリングすることによって形
成しても、該強誘電体を構成する金属をターゲットとし
て醸素まｔは水、或いはこれらを含む混合ガス雰囲気下
で斜め入斜反応性スパッタリングすることによって形成
してもよい。The island-like discontinuous film may be formed by direct oblique sputtering using the ferroelectric material as a target, or may be formed by diagonal sputtering using the metal constituting the ferroelectric material as a target. It may be formed by oblique reactive sputtering in a mixed gas atmosphere containing .
該島状不連続被膜は、例えばポリイミド等の電気絶縁性
の耐熱性合成樹脂被膜上に直接スパッタリングして形成
しても、ま九例えばポリイミドの前駆体であるポリアミ
ック酸等の電気絶縁性の耐熱性合成樹脂の前駆体被贋上
にスパッタリングして形成してから該合成樹脂の重合を
完結せしめることによって、得らｒＬｔ該合成樹脂被膜
上に形成されているようにしてもよい。Even if the island-shaped discontinuous film is formed by direct sputtering on an electrically insulating heat-resistant synthetic resin film such as polyimide, it may be formed on an electrically insulating heat-resistant synthetic resin film such as polyamic acid, which is a precursor of polyimide. It may be formed by sputtering on a synthetic resin precursor and then completing the polymerization of the synthetic resin, so that the obtained film is formed on the synthetic resin film.
電気絶縁性の耐熱性合成樹脂或いはその前駆体の被膜面
は、スパッタされ九粒子が該被膜面に対して略水平乃至
４ｒの角度で斜め入射するように、ターゲットに対して
位置決めするのが好ましい。The coating surface of the electrically insulating heat-resistant synthetic resin or its precursor is preferably positioned with respect to the target so that the sputtered particles are obliquely incident on the coating surface at an angle of approximately horizontal to 4r. .
（実施例）
以下、添付図面に従って本発明の実施例に付き説明する
。(Examples) Examples of the present invention will be described below with reference to the accompanying drawings.
図面は本発明方法を実施するための装置の１例を示すも
ので、１は処理室を示し、該処理室１は外部の真空ポン
プその他の真空排気系２に接続されて内部の真空度を調
節自在としであると共に該処理室ＩＫ連通されたガス導
入管３からアルゴン等の不活性ガスや、或いは反応性ス
パッタリングの場合には醸素または水、或いはこれらを
含む混合ガス等の所望のガスを導入できるようにしであ
る。また、該処理室１内には、電極４．４が平行て対向
配置され、その負極側の電極４にターゲツト材５が支持
されていると共に、これら電極４．４間には、電気絶縁
性の耐熱性合成樹脂或いはその前駆体の被膜６ｔ−電極
側表面に積層さｆＬ九電電極基板７支持する支持部材８
が設けられている。尚、図中９は電極４．４の電源、１
０はガス導入管５の流量調整弁を示す。The drawing shows one example of an apparatus for carrying out the method of the present invention, and 1 indicates a processing chamber, which is connected to an external vacuum pump or other evacuation system 2 to maintain the internal vacuum level. A desired gas such as an inert gas such as argon, or in the case of reactive sputtering, nitrogen or water, or a mixed gas containing these, is supplied from a gas inlet pipe 3 which is freely adjustable and is connected to the processing chamber IK. This makes it possible to introduce . Further, in the processing chamber 1, electrodes 4.4 are arranged in parallel and facing each other, and a target material 5 is supported by the negative electrode 4, and an electrically insulating material is provided between these electrodes 4.4. A support member 8 that supports the fL Kyuden electrode substrate 7 is laminated on the electrode side surface of the heat-resistant synthetic resin or its precursor coating 6t.
is provided. In addition, 9 in the figure is the power source of the electrode 4.4, 1
0 indicates a flow rate adjustment valve of the gas introduction pipe 5.
ここで、当該装置による液晶配向膜の製造例を実施例１
乃至４として示す。Here, an example of manufacturing a liquid crystal alignment film using the apparatus is described in Example 1.
Shown as 4 to 4.
実施例１
−まず、刷毛塗り法、浸種法、スピンコード法、スプレ
ー法、真空蒸着法等の適宜の方法によって電極側表面に
ぎリイミドの前駆体である膜厚１０００Ａのポリアミッ
ク酸の被膜６を積層された、たて、よこ３０ｃｒｒＬｘ
５０ｃ７ＩＬの電極基板７を、そのポリアミック酸の被
膜６表面が電極４．４間に略水平に、即ち被膜６表面に
ターゲツト材５からスパッタされた粒子が略水平に入射
するように支持部材８で支持した。Example 1 - First, a coating 6 of polyamic acid having a thickness of 1000 Å, which is a precursor of nigiriimide, is applied to the electrode side surface by an appropriate method such as brush coating, seeping, spin coding, spraying, or vacuum evaporation. Laminated, vertical and horizontal 30crrLx
The electrode substrate 7 of 50c7IL is supported by a support member 8 so that the surface of the polyamic acid coating 6 is approximately horizontal between the electrodes 4, 4, that is, the particles sputtered from the target material 5 are incident on the surface of the coating 6 approximately horizontally. I supported it.
次にターゲツト材５として、Ｂａ及びで１を負極側の電
極４１７Ｃ支持してから、処理室１内を真空排気系２を
介してＩ Ｘ １０−〜Ｉ Ｘ １０− Ｔｏｒｒ程度
に設定した後、該処理室１内がαＯＩ Ｔｏｒｒとなる
ようにガス導入管３を介して容量比で１：１のＡｒと０
２の混合ガスを導入し九。Next, as the target material 5, Ba and 1 are supported on the negative electrode 417C, and the inside of the processing chamber 1 is set to approximately IX 10- to IX 10- Torr via the evacuation system 2. Ar and O were supplied at a volume ratio of 1:1 through the gas introduction pipe 3 so that the inside of the processing chamber 1 was at αOI Torr.
Introduce the mixed gas from Step 2.9.
その後、？を極４．４間に−２ＫＶの直流電圧を印加し
て、スパッタされたＢａ及びＴ１と０２とが反応して得
ら几たＢａＴｉ０ａをポリアミック酸の被膜６表面に６
０秒間入射させてその表面にＢａＴｉ０ａの島状不連続
被膜を形成し念。即ち、ポリアミック酸の被膜６をＢａ
Ｔ１０３の島状被腹間に露出させるようにした。after that,? By applying a DC voltage of -2 KV between the electrodes 4.4, the sputtered Ba and T1 and 02 react to form BaTi0a on the surface of the polyamic acid coating 6.
It was irradiated for 0 seconds to form an island-like discontinuous film of BaTiOa on the surface. That is, the polyamic acid coating 6 is made of Ba.
It was made to be exposed between the insular peritoneum of T103.
最後て電極基板７を処理室１から取り出して図示しない
加熱室に収容し、該基板７上に積層されたポリアミック
酸を２００〜４００°Ｃに加熱してポリイミドに重合し
た。Finally, the electrode substrate 7 was taken out from the processing chamber 1 and placed in a heating chamber (not shown), and the polyamic acid laminated on the substrate 7 was heated to 200 to 400° C. to polymerize into polyimide.
かくして、剥離や傷の全くない非常に均一な配向性を示
す大面積の液晶配向膜が得られた。In this way, a large-area liquid crystal alignment film was obtained that exhibited very uniform alignment with no peeling or scratches.
実施例２
ポリアミック酸の被膜６に代えて膜厚１０００Ａのポリ
イミドの被膜６′ｔ−積層された′電極基板７を用い、
従って最後の加熱重合処理を行なわないこと以外は前記
実施例１と同様の処理を行なって液晶配向膜を得た。Example 2 In place of the polyamic acid coating 6, a polyimide coating 6't-laminated electrode substrate 7 with a thickness of 1000A was used,
Therefore, a liquid crystal aligning film was obtained by performing the same treatment as in Example 1 except that the final heating polymerization treatment was not performed.
やはり、前記実施例１と同様に、剥離や傷の全くない非
常に均一な配向性を示す大面積の液晶配向膜が得られ九
〇
実施例３
実施例１と同様の膜厚１０００Ａのポリアミック酸の被
膜６′５ｃ積層さｎ電電極基板７を実施例１と同様にし
て支持部材８で支持した。Similarly to Example 1, a large-area liquid crystal alignment film with very uniform alignment without any peeling or scratches was obtained. The n-electrode electrode substrate 7 on which the coating 6'5c was laminated was supported by the support member 8 in the same manner as in Example 1.
次にターゲツト材５としてＢａＴｉＯ３を負極側の電極
４に支持してから、処理室１内を真空排気系を介してＩ
Ｘ １０”〜ＩＸ１０″４Ｔ口ｒｒ程度に＆定した後
、該処理室１内がαＯＩ Ｔｏｒｒとなるようにガス導
入管５を介して容量比で１＝１のＡｒと０２の混合ガス
を導入した。Next, BaTiO3 is supported as a target material 5 on the negative electrode 4, and then the inside of the processing chamber 1 is pumped through an evacuation system.
After setting the temperature at about did.
その後、電極４．４間に１ｗ／ｆｆｌの高周波電圧を印
加して、スパッタされたＢａＴ１０３をポリアミック酸
の被膜６表面に１２０秒間入射させてその表面にＢａＴ
１０３の島状不連続被膜を形成し九。Thereafter, a high frequency voltage of 1 w/ffl was applied between the electrodes 4 and 4, and the sputtered BaT103 was made to inject onto the surface of the polyamic acid coating 6 for 120 seconds.
103 island-like discontinuous coatings were formed.
最後に実施例１と同様にしてポリアミック酸−５ｒ：キ
リイミドに重合し友。Finally, polyamic acid-5r was polymerized into kyriimide in the same manner as in Example 1.
かくして、剥離や傷の全くない非常に均一な配向性を示
す大面積の液晶配向膜が得られた。In this way, a large-area liquid crystal alignment film was obtained that exhibited very uniform alignment with no peeling or scratches.
実施例４
ポリアミック酸の被膜６に代えて膜厚１０００λのポリ
イミドの被膜６を積層されたｉＪ！極基板７を用い、従
ってＭ径の加熱重合処理を行なわないこと以外は前記実
施例５と同様の処理を行なって液晶配向膜を得た。Example 4 iJ! in which a polyimide film 6 with a thickness of 1000λ was laminated in place of the polyamic acid film 6! A liquid crystal aligning film was obtained by performing the same treatment as in Example 5 except that the polar substrate 7 was used and therefore the heating polymerization treatment of the M diameter was not performed.
やはり、前記実施例３と同様に、剥離や傷の全くない非
常に均一な配向性を示す大面積の液晶配向膜が得られた
。Again, as in Example 3, a large-area liquid crystal alignment film was obtained that exhibited very uniform alignment without any peeling or scratches.
前記の各実施例によって得られた液晶配向膜を用いてＴ
Ｎモードの液晶表示素子を作製し念ところ、電気絶縁性
の耐熱性合成樹脂被膜の表面にＺｒＯ２、Ｔｉｅｓ等の
普通の誘電体の島状不連続被膜を斜め入斜スパッタリン
グによって形成し念液晶配向膜を用いて作製したＴＮモ
ードの液晶表示素子と比して、数分の１程度のオーダノ
濃度のカイラル材（コレステリック液晶）の混入でシン
グルドメインが形成され同程度の鮮明１変のものが得ら
れ念〇
かくして、液晶を一方向にねじれるようにする友めに加
えるカイラル材の混入社が少なくて済む実施例による液
晶配向膜の方が配向規制力に侵れることが確認された◇
尚、強誘導体として前記チタン酸バリウムに代えて、チ
タン酸鉛、ニオブ酸リチウム、ジルコン酸チタン醗鉛ラ
ンタン、ジルコン酸チタン酸鉛、ランタン酸チタン醇鉛
を用いて前記実施例と同様にして液晶配向膜を形成し、
これを用いてＴＮモードの液晶表示素子を作製し九とこ
ろ、やはり各液晶配向膜の配向規制力が普通の誘電体を
用いる場合よりもＩｎていることが確認さｆｉ念。Using the liquid crystal alignment film obtained in each of the above examples, T
To prepare an N-mode liquid crystal display element, we formed an island-shaped discontinuous film of a common dielectric material such as ZrO2 or Ties on the surface of an electrically insulating heat-resistant synthetic resin film by oblique sputtering to achieve liquid crystal alignment. Compared to a TN mode liquid crystal display element fabricated using a film, a single domain is formed by mixing a chiral material (cholesteric liquid crystal) with a concentration of about a fraction of the order, and a single domain with the same level of clarity can be obtained. Thus, it was confirmed that the liquid crystal alignment film according to the embodiment, which requires less mixing of the chiral material added to the liquid crystal to twist it in one direction, is more resistant to alignment regulation force◇ A liquid crystal alignment film was prepared in the same manner as in the above example, using lead titanate, lithium niobate, lanthanum titanium zirconate, lead zirconate titanate, and lead titanium lanthanate as strong dielectrics instead of barium titanate. form,
Using this material, we fabricated a TN mode liquid crystal display element, and it was confirmed that the alignment regulating force of each liquid crystal alignment film was greater than that in the case of using an ordinary dielectric material.
（発明の効果）
このように、本発明の液晶配向膜の形成方法によれば、
電気絶縁性の耐熱性合成樹脂被膜の表面に誘電体の島状
不連続被膜を斜め入射スパッタリングだよって形成する
液晶配向膜の形成方法において、該誘電体として強誘電
体を用いるようにし念ので、剥離や傷の全くない非常に
均一な配向性を示し、しかも配向規制力にｆＭｆｌ念大
面積大面積配向膜を簡単に形成することができる効果を
有する。(Effect of the invention) As described above, according to the method for forming a liquid crystal alignment film of the present invention,
In a method for forming a liquid crystal alignment film in which a dielectric island-like discontinuous film is formed on the surface of an electrically insulating heat-resistant synthetic resin film by oblique incidence sputtering, a ferroelectric material is used as the dielectric material. It exhibits very uniform alignment with no peeling or scratches, and has the effect of easily forming a fMfl large-area alignment film in terms of alignment regulating force.
図面は本発明液晶配向膜の形成方法を実施する九めの装
置の一例の一部を截除した正面図である。
１・・・処理室 ２・・・真空排気系３・・
・ガス導入管 ４・・・電極５・・・ターゲツト
材
６・・・電気絶縁性の耐熱性合成樹脂或いはその前駆体
の被膜The drawing is a partially cutaway front view of an example of a ninth apparatus for carrying out the method for forming a liquid crystal alignment film of the present invention. 1... Processing chamber 2... Vacuum exhaust system 3...
・Gas introduction pipe 4... Electrode 5... Target material 6... Coating of electrically insulating heat-resistant synthetic resin or its precursor
Claims (1)
不連続被膜を斜め入斜スパッタリングによつて形成する
液晶配向膜の形成方法において、該誘電体として強誘電
体を用いることを特徴とする液晶配向膜の形成方法。A method for forming a liquid crystal alignment film in which an island-like discontinuous film of dielectric is formed on the surface of an electrically insulating heat-resistant synthetic resin film by oblique sputtering, characterized in that a ferroelectric is used as the dielectric. A method for forming a liquid crystal alignment film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61183378A JP2537349B2 (en) | 1986-08-06 | 1986-08-06 | Method for forming liquid crystal alignment film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61183378A JP2537349B2 (en) | 1986-08-06 | 1986-08-06 | Method for forming liquid crystal alignment film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6340120A true JPS6340120A (en) | 1988-02-20 |
| JP2537349B2 JP2537349B2 (en) | 1996-09-25 |
Family
ID=16134718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61183378A Expired - Fee Related JP2537349B2 (en) | 1986-08-06 | 1986-08-06 | Method for forming liquid crystal alignment film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2537349B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52150648A (en) * | 1976-06-09 | 1977-12-14 | Toshiba Corp | Production of liquid crystal element |
| JPS5312346A (en) * | 1976-07-20 | 1978-02-03 | Asahi Glass Co Ltd | Method of surface treating electrode plate for liquid crystal display unit |
| JPS6117129A (en) * | 1984-07-03 | 1986-01-25 | Nippon Kogaku Kk <Nikon> | Liquid crystal display device |
| JPS61159627A (en) * | 1985-01-07 | 1986-07-19 | Seiko Epson Corp | Liquid crystal electrooptic device |
-
1986
- 1986-08-06 JP JP61183378A patent/JP2537349B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52150648A (en) * | 1976-06-09 | 1977-12-14 | Toshiba Corp | Production of liquid crystal element |
| JPS5312346A (en) * | 1976-07-20 | 1978-02-03 | Asahi Glass Co Ltd | Method of surface treating electrode plate for liquid crystal display unit |
| JPS6117129A (en) * | 1984-07-03 | 1986-01-25 | Nippon Kogaku Kk <Nikon> | Liquid crystal display device |
| JPS61159627A (en) * | 1985-01-07 | 1986-07-19 | Seiko Epson Corp | Liquid crystal electrooptic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2537349B2 (en) | 1996-09-25 |
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