JPS6339960Y2 - - Google Patents

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Publication number
JPS6339960Y2
JPS6339960Y2 JP3293681U JP3293681U JPS6339960Y2 JP S6339960 Y2 JPS6339960 Y2 JP S6339960Y2 JP 3293681 U JP3293681 U JP 3293681U JP 3293681 U JP3293681 U JP 3293681U JP S6339960 Y2 JPS6339960 Y2 JP S6339960Y2
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JP
Japan
Prior art keywords
curved
gas
filter
reaction chamber
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3293681U
Other languages
Japanese (ja)
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JPS57146329U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP3293681U priority Critical patent/JPS6339960Y2/ja
Publication of JPS57146329U publication Critical patent/JPS57146329U/ja
Application granted granted Critical
Publication of JPS6339960Y2 publication Critical patent/JPS6339960Y2/ja
Expired legal-status Critical Current

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Description

【考案の詳細な説明】 本考案は半導体気相生成装置(CVD装置)、プ
ラズマCVD装置、プラズマエツチヤ等主に、減
圧状態下の気相熱化学反応により、半導体基板
(ウエーハ)表面にコーテイング、エツチング等
の処理を行う半導体気相処理装置に使用するフイ
ルタに関する。
[Detailed description of the invention] This invention is mainly used in semiconductor vapor phase generation equipment (CVD equipment), plasma CVD equipment, plasma etcher, etc. to coat the surface of semiconductor substrates (wafers) by vapor phase thermochemical reactions under reduced pressure conditions. The present invention relates to a filter used in a semiconductor vapor phase processing apparatus that performs processing such as etching.

気相生成装置(以下CVD装置という)におい
ては、常圧式に比べ、量産性と膜厚等の均一性の
良い減圧式CVD装置が普及している。又近年、
生成温度を低く出来る利点からプラズマCVD装
置が普及しつつあり、エツチング工程の高精度化
を目指してプラズマエツチヤが普及しつつある。
これ等の装置はいずれも真空ポンプを使用して反
応室内を半導体基板の処理に適した圧力状態に保
ちつつ反応室内の半導体基板を、処理に適したガ
スを導入することにより熱化学反応を起させて気
相処理するという共通点を持つている。導入され
たガスは100%処理に使われる事はなく、一部の
ガスは生ガスのまま、あるいは反応室空間で化学
反応を起して微粉体となり、真空ポンプにより吸
引排気され、又一部のガスは反外管壁その他に吸
着し、粉体状あるいは結晶状の析出物となる。こ
の析出物は非常に不安定であり、ポンプによる吸
引のガスの流れやボートの出入時の摩擦や振動で
剥離し、やがてポンプに吸引される。
Among gas phase generation devices (hereinafter referred to as CVD devices), reduced pressure CVD devices are popular because they are easier to mass produce and have better uniformity in film thickness, etc., than normal pressure types. Also, in recent years,
Plasma CVD equipment is becoming popular due to its advantage of lowering the generation temperature, and plasma etchers are becoming popular with the aim of improving the precision of the etching process.
All of these devices use a vacuum pump to maintain the pressure in the reaction chamber suitable for processing the semiconductor substrate, and then introduce a gas suitable for processing the semiconductor substrate inside the reaction chamber to cause a thermochemical reaction. They have in common that they are treated in a vapor phase. 100% of the introduced gas is not used for processing, and some of the gas remains as raw gas or undergoes a chemical reaction in the reaction chamber space and becomes fine powder, which is sucked and exhausted by a vacuum pump, and some of it is This gas is adsorbed on the outer tube wall and other surfaces, forming powder or crystalline precipitates. This precipitate is extremely unstable, and is peeled off by the flow of gas suctioned by the pump and by friction and vibration when the boat moves in and out, and is eventually sucked into the pump.

一方、上記の気相処理に適した圧力領域(0.01
〜10Torr程度)で使用し得る真空ポンプは油回
転真空ポンプ(ロータリーポンプ)、メカニカル
ブースターポンプ等の機械式ポンプが主であり、
従つて前記粉体等の析出物の吸引は潤滑油を劣化
させ、摺動部を損傷し、潤滑油の供給口をふさい
で潤滑不良を起す等、ポンプの寿命を致命的に短
くし、極端な場合、ポンプの保守のための停止時
間により量産性の利点が損なわれることがあつ
た。ポンプ寿命を長くし、保守を容易にするため
の試みは従来より行われている。その主なものは
ロータリーポンプにオイルタンクを配管を介して
連結して油を循環させる事によりオイル劣化の時
間を延長する装置や、更にこの装置の配管の途中
にフイルタおよび油循環ポンプを設けて、油を濾
過し、混入粉体を取除くようにした装置及び気相
処理に使用していない時間を利用し、ロータリー
ポンプのシリンダ内に油を比較的多量に導入し、
シリンダ内の異物をポンプ自身の回転を利用して
洗浄するようにした装置等である。これ等はポン
プ内に吸引してしまつた異物への対策であり、ポ
ンプに吸引する量を減らす対策とはならない。
On the other hand, the pressure range (0.01
Vacuum pumps that can be used at temperatures up to 10 Torr are mainly mechanical pumps such as oil rotary vacuum pumps (rotary pumps) and mechanical booster pumps.
Therefore, suction of precipitates such as powder deteriorates the lubricating oil, damages the sliding parts, blocks the lubricating oil supply port and causes poor lubrication, and fatally shortens the life of the pump. In such cases, the advantage of mass productivity could be lost due to downtime for pump maintenance. Attempts have been made to extend pump life and ease maintenance. The main ones are a device that extends the oil deterioration time by connecting an oil tank to a rotary pump via piping to circulate the oil, and a filter and oil circulation pump installed in the middle of the piping of this device. , a relatively large amount of oil is introduced into the cylinder of a rotary pump by using a device that filters the oil and removes mixed powder, and by using the time that is not used for gas phase treatment.
This is a device that uses the rotation of the pump itself to clean foreign matter inside the cylinder. These are measures against foreign matter that has been sucked into the pump, and are not measures to reduce the amount sucked into the pump.

異物吸入を事前に阻止するためにはポンプ前に
フイルタを設ければ良いが、減圧気相処理を良好
に行うための圧力条件は非常に微妙であり、前記
した微粉体状生成物の通過を阻止するための緻密
なフイルタを仮に設けたとすれば極端な場合、一
回の処理工程内で目詰りを起し圧力条件が変化し
て、安定な処理を行う事が出来ない。フイルタの
目を粗くし、何回かの処理工程に亘つて使用でき
るようにすると、比較的短時間の内にフイルタの
清掃又は交換とポンプの保守の両方を行わねばな
らず結局保守点検の内容が多くなる。従つてポン
プ前には結晶化した粗大な固形生成物を阻止する
程度の目の粗い網を使用したフイルタを設けてい
るのが現状であり、むしろその結果として前記し
たロータリーポンプへの種々の対策が行われてき
ているといえる。
A filter can be installed in front of the pump to prevent the inhalation of foreign substances, but the pressure conditions for good vacuum gas phase treatment are very delicate, and it is necessary to prevent the passage of the fine powder products mentioned above. Even if a dense filter is provided to prevent this, in extreme cases, clogging may occur within a single processing step, resulting in changes in pressure conditions, making it impossible to perform stable processing. If the filter is made coarser so that it can be used over several processing steps, both the filter must be cleaned or replaced and the pump maintained in a relatively short period of time, which ultimately reduces the amount of maintenance and inspection required. will increase. Therefore, the current situation is to install a filter with a mesh that is coarse enough to block the crystallized coarse solid products in front of the pump, and as a result, the various countermeasures for rotary pumps described above It can be said that this is being carried out.

しかしながらメカニカルブースターポンプの如
く、ポンプ作用に油を使わないポンプへの微粉体
状生成物の影響は前記対策では救えず、ロータリ
ーポンプでも多量の粉体を吸引してしまつてから
処理するより事前に吸引を阻止する方が合理的で
ある事はいうまでもない。
However, the effects of fine powder products on pumps that do not use oil for pumping action, such as mechanical booster pumps, cannot be alleviated by the above measures, and even with rotary pumps, it is better to dispose of the powder in advance than to suck up a large amount of powder. It goes without saying that it is more rational to prevent suction.

そこで本考案は、上記の点に鑑みてなされたも
のであつて、短時間内に目詰りを起さず、実用上
十分な回数の気相処理工程を安定に使用し得るフ
イルタを提供しようとするものである。以下図面
に従つて本考案の一実施例を説明する。
Therefore, the present invention was developed in view of the above points, and it is an attempt to provide a filter that does not become clogged within a short period of time and can be stably used in a practically sufficient number of gas phase treatment steps. It is something to do. An embodiment of the present invention will be described below with reference to the drawings.

第1図は本考案の一実施例を示す縦断面図、第
2図はそのA−A線横断面図である。1は半導体
気相処理装置の反応室に入口側フランジ2aで連
結される入口側管端部2を有する第1曲管で、3
はその出口側管端部である。4は真空ポンプに出
口側フランジ5aで連結される出口側管端部5を
有する第2曲管で、6はその入口側管端部であ
る。第1曲管1の出口側管端部3と第2曲管4の
入口側管端部6はそれぞれこれらを直径の異なる
外、内管とする同心の二重管構造になつている。
この第1,第2曲管1,4の二重管端部には、所
望数のフイルタカートリツジ7が気密に交換可能
に連結して取付けられ、かつ第1曲管1よりフイ
ルタカートリツジ7を通して第2曲管4に連通す
るガス流路が構成されている。フイルタカートリ
ツジ7の使用数とその取付け構造及びガス流路の
構成は特に限定しないが例えば図例の如くとす
る。即ち、第1曲管1の出口側管端部3に設けた
フランジ3aに、フイルタカートリツジ7の使用
数に応じて定まる長さの複数個のクランプロツド
8の基部を枢着し、第1,第2曲管1,4の二重
管端部に、所要数のフイルタカートリツジ7及び
端板9を順次真空シール用Oリング10を介して
連結してこれらを端板9のクランプ嵌挿溝9a内
に嵌挿したクランプロツド8の先端ネジ部11に
クランプナツト12を螺合せしめて取付けた構成
とする。
FIG. 1 is a longitudinal cross-sectional view showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line A--A. 1 is a first curved pipe having an inlet side pipe end 2 connected to a reaction chamber of a semiconductor vapor phase processing apparatus by an inlet side flange 2a;
is the outlet end of the tube. 4 is a second curved pipe having an outlet side pipe end 5 connected to the vacuum pump through an outlet side flange 5a, and 6 is an inlet side pipe end thereof. The outlet side tube end 3 of the first curved tube 1 and the inlet side tube end 6 of the second curved tube 4 have a concentric double tube structure with outer and inner tubes having different diameters.
A desired number of filter cartridges 7 are connected and attached to the double pipe ends of the first and second bent pipes 1 and 4 in an airtight manner so that they can be exchanged. A gas flow path communicating with the second curved pipe 4 is configured through the pipe. The number of filter cartridges 7 to be used, their mounting structure, and the configuration of the gas flow path are not particularly limited, but may be as shown in the figure, for example. That is, the bases of a plurality of clamp rods 8 having a length determined according to the number of filter cartridges 7 in use are pivotally attached to the flange 3a provided on the outlet side pipe end 3 of the first bent pipe 1. A required number of filter cartridges 7 and end plates 9 are sequentially connected to the double pipe ends of the second curved pipes 1 and 4 via vacuum sealing O-rings 10, and these are inserted into the clamp fitting grooves of the end plates 9. A clamp nut 12 is screwed onto the threaded end portion 11 of the clamp rod 8 inserted into the clamp rod 9a.

またフイルタカートリツジ7は第1,第2曲管
1,4の二重管端部に連結する第1,第2管体1
3,14と、この第1,第2管体13,14の一
端部間及び他端部間にそれぞれ嵌着した環状網板
15a,15bと、この環状網板15a,15b
に挾まれた第1,第2管体13,14間の環状空
間を軸方向に仕切る仕切用網板16a〜16c
と、この仕切用網板16a〜16cによつて仕切
られた空間内に充填されガスとの接触面積が極め
て大きく、かつ無数のガス通路を有せしめた濾過
材17とより構成する。
In addition, the filter cartridge 7 has first and second pipe bodies 1 connected to the double pipe ends of the first and second curved pipes 1 and 4.
3, 14, annular mesh plates 15a, 15b fitted between one end and the other end of the first and second tubes 13, 14, respectively; and annular mesh plates 15a, 15b.
Partition mesh plates 16a to 16c axially partition the annular space between the first and second tube bodies 13 and 14 sandwiched between
and a filtering material 17 which is filled in the space partitioned by the partitioning mesh plates 16a to 16c, has an extremely large contact area with gas, and has numerous gas passages.

第1曲管1の出口側管端部3に設けたフランジ
3aには冷却水通路18を備えており、第1,第
2曲管1,4及びフイルタカートリツジ7の全体
を冷却してガスの凝縮及び生成物の結晶化を促進
するようにしている。又、端板9には濾過材17
の目詰り状態を監視するための覗き窓19を設け
てフイルタカートリツジ7の交換、洗浄時期を知
ることができるようになつている。覗き窓19の
代りにダストメータを設けてもよい。
The flange 3a provided at the outlet end 3 of the first curved pipe 1 is provided with a cooling water passage 18, which cools the entire first and second curved pipes 1, 4 and the filter cartridge 7 to provide gas. to promote condensation and crystallization of the product. In addition, a filter material 17 is provided on the end plate 9.
A viewing window 19 is provided to monitor the clogging state of the filter cartridge 7, so that it is possible to know when to replace or clean the filter cartridge 7. A dust meter may be provided instead of the viewing window 19.

なお、20は第1曲管1の出口側管端部3に設
けたフランジ3aの内周に嵌着したフイルタカー
トリツジ7の取付用ガイドリングであり、Oリン
グ10への真空引き込み力を内側より支える役目
も成すが出口側管端部3と一体構造でもよい。ま
た濾過材17としては、例えば金網、多孔板等を
彎曲させたもの又はパイプ状の小片等を用いるこ
とができ、これらはいずれも充填時に互いに密着
してガス通路を塞ぐことなく、無数の不規則なガ
ス通路を形成し、かつガスとの接触面積も極めて
大きく、ガス中に含まれる粉体状、結晶状の異物
除去に最適である。
Reference numeral 20 designates a guide ring for attaching the filter cartridge 7 that is fitted to the inner circumference of the flange 3a provided at the outlet end 3 of the first bent pipe 1. Although it also plays a supporting role, it may be constructed integrally with the outlet side pipe end 3. Further, as the filtering material 17, for example, a wire mesh, a curved perforated plate, etc., or a pipe-shaped small piece, etc. can be used, and any of these can be used to prevent the innumerable number of particles from coming into close contact with each other during filling and blocking the gas passage. It forms regular gas passages and has an extremely large contact area with gas, making it ideal for removing powdery and crystalline foreign matter contained in gas.

本考案は上記のような構成であるから、第1,
第2曲管1,4の入口側管端部2及び出口側管端
部5をそれぞれ入口側フランジ2a及び出口側フ
ランジ5aで反応室及び真空ポンプに連結すれ
ば、反応室を出たガスは第1曲管1よりフイルタ
カートリツジ7の第1,第2管体13,14間に
嵌着した入口側の環状網板15aを通過して濾過
材17の多数の通路を通り、多くの表面積と接触
してガス中に含まれている微粉状、結晶状の異物
が除去される。この際、図例のように冷却水通路
18を設けてこれに冷却水を流通させれば、第
1,第2曲管1,4及びフイルタカートリツジ7
が冷却されてガスの凝縮及び生成物の結晶化が促
進され、異物の除去作用が向上する。異物の除去
されたガスは出口側の環状網板15bを通過し端
板9との間の空間部を経て中心部の第2管体14
内を通り、第2曲管4を経て真空ポンプにより吸
引排気される。フイルタカートリツジ7が目詰り
したら、クランプナツト12を緩めクランプロツ
ド8の先端ネジ部11を端板9のクランプ嵌挿溝
9aより離脱すれば、フイルタカートリツジ7を
取外し新品と交換するか、洗浄再生して再度取付
けることができる。なお、網板15a,15bを
目の粗いものとしておけば、ガスの流れを阻害さ
れず、かつ洗浄再生の際も容易にできる。また、
仕切用網板16a〜16cは濾過材17を環状空
間に均一に分配し、かつ第1,第2管体13,1
4を一体に固定するのに役立つが設けなくても差
し支えない。
Since the present invention has the above configuration, the first,
If the inlet side pipe end 2 and the outlet side pipe end 5 of the second curved pipes 1 and 4 are connected to the reaction chamber and the vacuum pump through the inlet side flange 2a and the outlet side flange 5a, respectively, the gas leaving the reaction chamber can be From the first curved pipe 1, it passes through the annular mesh plate 15a on the inlet side fitted between the first and second pipe bodies 13 and 14 of the filter cartridge 7, passes through many passages of the filter medium 17, and has a large surface area. Fine powder and crystal foreign substances contained in the gas are removed by contact with the gas. At this time, if a cooling water passage 18 is provided as shown in the figure and cooling water is passed through it, the first and second bent pipes 1 and 4 and the filter cartridge 7
is cooled to promote gas condensation and product crystallization, improving the foreign matter removal effect. The gas from which the foreign matter has been removed passes through the annular mesh plate 15b on the outlet side, passes through the space between it and the end plate 9, and reaches the second pipe body 14 in the center.
It passes through the inside, passes through the second curved pipe 4, and is sucked and exhausted by a vacuum pump. If the filter cartridge cartridge 7 becomes clogged, loosen the clamp nut 12 and remove the threaded end 11 of the clamp rod 8 from the clamp fitting groove 9a of the end plate 9, then remove the filter cartridge 7 and replace it with a new one, or clean and recycle it. You can then install it again. Note that if the mesh plates 15a and 15b are made coarse, the gas flow will not be obstructed and cleaning and regeneration can be easily performed. Also,
The partition mesh plates 16a to 16c uniformly distribute the filtering material 17 in the annular space, and the first and second pipe bodies 13, 1
Although it is useful for fixing 4 together, there is no problem even if it is not provided.

上述の説明より明らかなように本考案によれ
ば、第1,第2曲管部を反応室と真空ポンプに連
結したまま、即ち、真空排気系の連結構造を維持
したままフイルタカートリツジの交換、洗浄再生
が容易にできるばかりでなく、目詰りもガスとの
接触面積が極めて大きく、かつ無数のガス通路を
有せしめた濾過材の使用により長期間に亘つて起
らず、半導体基板の気相処理の量産化を損うこと
がない等の効果がある。
As is clear from the above explanation, according to the present invention, the filter cartridge can be replaced while the first and second curved pipe sections are connected to the reaction chamber and the vacuum pump, that is, while the connection structure of the vacuum evacuation system is maintained. In addition to being easy to clean and regenerate, the use of a filter material that has an extremely large contact area with gas and countless gas passages prevents clogging from occurring over a long period of time, and prevents the semiconductor substrate from becoming clogged. There are effects such as not impairing mass production of phase processing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す縦断面図、第
2図はそのA−A線横断面図である。 1……第1曲管、2……入口側管端部、2a…
…入口側フランジ、3……出口側管端部、3a…
…フランジ、4……第2曲管、5……出口側管端
部、5a……出口側フランジ、6……入口側管端
部、7……フイルタカートリツジ、8……クラン
プロツド、9……端板、9a……クランプ嵌挿
溝、10……真空シール用Oリング、11……先
端ネジ部、12……クランプナツト、13……第
1管体、14……第2管体、15a,15b……
環状網板、16a〜16c……仕切用網板、17
……濾過材。
FIG. 1 is a longitudinal cross-sectional view showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line A--A. 1... First curved pipe, 2... Inlet side pipe end, 2a...
...Inlet side flange, 3...Outlet side pipe end, 3a...
...Flange, 4...Second curved pipe, 5...Outlet side pipe end, 5a...Outlet side flange, 6...Inlet side pipe end, 7...Filter cartridge, 8...Clamp rod, 9... ...End plate, 9a...Clamp fitting groove, 10...O-ring for vacuum sealing, 11...Tip thread, 12...Clamp nut, 13...First tube, 14...Second tube, 15a, 15b...
Annular mesh plate, 16a to 16c... Partition mesh plate, 17
...Filtering material.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 反応室内を真空ポンプにより適正減圧下に保持
しながら反応室内の半導体基板をガスの導入によ
り熱化学反応を起させて気相処理する装置の反応
室と真空ポンプとの間に使用されるフイルタにお
いて、反応室に連結される入口側管端部を有する
第1曲管の出口側管端部と、真空ポンプに連結さ
れる出口側管端部を有する第2曲管の入口側管端
部をそれぞれ直径の異なる外、内管とする同心の
二重管構造とし、この第1,第2曲管の二重管端
部に、所望数のフイルタカートリツジを気密に交
換可能に連結して取付け、かつ第1曲管よりフイ
ルタカートリツジを通して第2曲管に連通するガ
ス流路を構成すると共に、フイルタカートリツジ
は第1,第2曲管の二重管端部に連結する第1,
第2管体と、この第1,第2管体の一端部間及び
他端部間にそれぞれ嵌着した環状網板と、この2
つの環状網板に挾まれた第1,第2管体間の環状
空間内に充填されガスとの接触面積が極めて大き
く、かつ無数のガス通路を有せしめた濾過材とよ
り構成したことを特徴とする半導体気相処理装置
用フイルタ。
In a filter used between a reaction chamber and a vacuum pump of an apparatus that performs gas phase processing on a semiconductor substrate in the reaction chamber by causing a thermochemical reaction by introducing gas while maintaining the reaction chamber under appropriate reduced pressure with a vacuum pump. , an outlet side tube end of the first curved tube having an inlet side tube end connected to the reaction chamber, and an inlet side tube end of the second curved tube having an outlet side tube end connected to the vacuum pump. It has a concentric double pipe structure with outer and inner pipes having different diameters, and the desired number of filter cartridges are connected and installed in an airtight and replaceable manner at the double pipe ends of the first and second curved pipes. , and constitutes a gas flow path communicating from the first curved pipe to the second curved pipe through the filter cartridge, and the filter cartridge has a first pipe connected to the double pipe ends of the first and second curved pipes.
a second tube, an annular mesh plate fitted between one end and the other end of the first and second tubes;
The filter material is filled in the annular space between the first and second tubes sandwiched between two annular mesh plates, has an extremely large contact area with gas, and has numerous gas passages. A filter for semiconductor vapor phase processing equipment.
JP3293681U 1981-03-09 1981-03-09 Expired JPS6339960Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3293681U JPS6339960Y2 (en) 1981-03-09 1981-03-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3293681U JPS6339960Y2 (en) 1981-03-09 1981-03-09

Publications (2)

Publication Number Publication Date
JPS57146329U JPS57146329U (en) 1982-09-14
JPS6339960Y2 true JPS6339960Y2 (en) 1988-10-19

Family

ID=29830315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3293681U Expired JPS6339960Y2 (en) 1981-03-09 1981-03-09

Country Status (1)

Country Link
JP (1) JPS6339960Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197119B1 (en) * 1999-02-18 2001-03-06 Mks Instruments, Inc. Method and apparatus for controlling polymerized teos build-up in vacuum pump lines

Also Published As

Publication number Publication date
JPS57146329U (en) 1982-09-14

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