JPS6338412B2 - - Google Patents

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a Cu alloy lead material used in the manufacture of semiconductor devices such as ICs and LSIs. [Prior Art] In general, Cu alloy lead materials used as lead materials for semiconductor devices have the following properties: (1) Good press punching properties; (2) Heat distortion and heat softening occur during heat bonding or heat diffusion compression bonding of semiconductor elements. (3) Good heat dissipation and conductivity; (4) Strength and elongation that will prevent damage from bending or repeated bending when transporting semiconductor devices or incorporating them into electrical equipment. In terms of specific fields of use, for the purpose of evaluating strength, tensile strength: 40Kgf/
mm ² or more, elongation: 4% or more, conductivity: 50% IACS or more, for the purpose of evaluating heat dissipation and conductivity, softening point: 400℃ or more, for the purpose of evaluating heat resistance,
However, many Cu alloy lead materials having these characteristics have been proposed and put into practical use. [Problems to be solved by the invention] However, with the increasing degree of integration of semiconductor devices in recent years, Cu alloy lead materials have
In addition to having the above characteristics, higher strength and higher elongation are now required, and there is a strong desire to develop a Cu alloy lead material that has characteristics that can fully meet these requirements. [Means for Solving the Problems] Therefore, from the above-mentioned viewpoint, the present inventors have developed a Cu alloy lead material with even higher strength and elongation, in addition to having the characteristics required for a Cu alloy lead material for semiconductor devices. As a result of conducting research to develop a Cu alloy lead material with Furthermore, one or more of Ni, Sn, Fe, Co, and Be (hereinafter referred to as Group 1 metals): 0.005 to 2%, Mg, One or more of Si, Al, Zn, Mn, B, P, Li, Y, and rare earth elements (hereinafter referred to as Group 2 metals): 0.001 to 1%, Ti, Nb, V , Ta, Hf, Mo, and W (hereinafter referred to as 3rd group metals): 0.005 to 2%, any of the above 1st to 3rd group metals, or 2%
In addition, the structure consists of crystallized substances (crystallized substances generally refer to component metals that appear from a molten alloy during the solidification process; For particles (mainly composed of Cr), the average particle size is usually 20 to 100 μm, but the average particle size is 10 μm or less. As for the particles (mainly composed of Cu ₃ Zr and Cr), those with an average particle size of 0.5 to 3 μm are also used.
The lead material is made of a Cu alloy with a grain size of 0.1 μm or less, and the average grain ^size is 50 μm or less instead of the normal average grain size of 60 to 200 μm. Cu alloy lead material with these properties is suitable as a lead material for highly integrated semiconductor devices. They obtained the knowledge that it exhibits sufficiently satisfactory performance. This invention was made based on the above knowledge, and the reason why the component composition was limited as described above will be explained below. (a) Cr and Zr These components have the effect of improving strength and heat resistance, but the content of each
If Cr: less than 0.05% and Zr: less than 0.005%, the desired effect cannot be obtained, while if the content exceeds Cr: 1% and Zr: 0.3%, nonmetallic inclusions are likely to occur. As the plating properties and conductivity deteriorate,
Its content is Cr: 0.05~1%, Zr: 0.005~0.3
%. (b) Group 1 metals In addition to improving strength, these components
It has the effect of preventing deformation and burr generation during press punching, but if the content is less than 0.005%, the desired effect will not be obtained, while if the content exceeds 2%, the electrical conductivity will decrease. Therefore, the content was set at 0.005 to 2%. (c) Group 2 metals These components all have a deoxidizing effect and also have the effect of improving electrical conductivity, plating properties, and soldering properties, but their content is
If the content is less than 0.001%, the desired effect cannot be obtained in the above action, while if the content exceeds 1%, the above action tends to deteriorate. Therefore, the content was set at 0.001 to 1%. . (d) Group 3 metals These components have the effect of improving strength and heat resistance, but if their content is less than 0.005%, the desired effect cannot be obtained; If the content exceeds 0.005% to 2%, the conductivity will decrease.
%. In addition, as mentioned above, in this type of conventional Cu alloy, the average grain size of crystal grains: 20 to 100 μm, the average grain size of precipitates: 0.5 to 3 μm, and the average grain size of crystal grains: 60 to 100 μm. 200μm, but with this microstructure, it is not possible to secure the desired high strength and high elongation. By setting the average grain size: 0.1 μm or less and the average crystal grain size: 50 μm or less, that is, by satisfying all of these conditions, it is possible to achieve a tensile strength of 50 Kgf/mm ² or more. It is possible to ensure strength and high elongation of 6% or more, and furthermore, press punching properties are also significantly improved. Therefore, even if the average particle size of any of the crystallized substances, precipitates, and crystal grains exceeds the above upper limit, the above-mentioned high strength and high elongation cannot be ensured. [Example] Next, the Cu alloy lead material of the present invention will be specifically explained using Examples. Using an ordinary low frequency groove induction furnace, the first
Prepare a Cu alloy molten metal having the composition shown in the table, and use it in a water-cooled mold to form a planar shape: 50mm x height:
An ingot with a dimension of 100 mm is prepared, and the ingot after facing is hot rolled at a predetermined hot rolling start temperature within the range of 800 to 950°C to produce a hot rolled plate with a thickness of 11 mm. After that, it is rapidly cooled by water spray to reduce the crystallized substances and crystal grains into fine particles without forming precipitates.

【table】

〔Effect of the invention〕

From the results shown in Table 1, Cu alloy lead materials 1 to 17 of the present invention all have a tensile strength of 50 Kgf/mm ² or more, an elongation of 6% or more, an electrical conductivity of 52% IACS or more, and a temperature of 400°C or more. It is clear that these values sufficiently satisfy the characteristics required for lead materials for semiconductor devices, and that the strength and elongation are even higher. As mentioned above, the Cu alloy lead material of the present invention not only has the electrical conductivity and softening point required for normal Cu alloy lead materials for semiconductor devices, but also has even higher strength and elongation, so it is better than normal Cu alloy lead materials for semiconductor devices. It exhibits excellent performance as a lead material not only for semiconductor devices but also for highly integrated semiconductor devices.

Claims (1)

[Claims] 1 Contains one or two of the following: Cr: 0.05 to 1%, Zr: 0.005 to 0.3%, and the remainder is Cu and unavoidable impurities (weight %). , and is characterized by being composed of a Cu alloy that satisfies the following in terms of structure: average grain size of crystallized products: 10 μm or less, average grain size of precipitates: 0.1 μm or less, average grain size of crystal grains: 50 μm or less. Cu alloy lead material for semiconductor devices with high strength and high elongation. 2 Cr: 0.05-1%, Zr: 0.005-0.3%, Contains one or two of the following, and further contains one or more of Ni, Sn, Fe, Co, and Be: 0.005 ~2%, with the remainder consisting of Cu and unavoidable impurities (wt%), and according to the structure, average particle size of crystallized product: 10 μm or less, average particle size of precipitate: 0.1 μm A Cu alloy lead material for semiconductor devices having high strength and high elongation, characterized in that it is made of a Cu alloy that satisfies the following: Average grain size of crystal grains: 50 μm or less. 3 Contains one or two of Cr: 0.05-1%, Zr: 0.005-0.3%, and further contains Mg, Si, Al, Zn, Mn, B, P, Li, Y, and rare earth elements. One or more of the following:
0.001 to 1%, with the remainder consisting of Cu and unavoidable impurities (wt%), and according to the structure, the average particle size of the crystallized product: 10 μm or less, the average particle size of the precipitate: 0.1 A Cu alloy lead material for semiconductor devices having high strength and high elongation, characterized in that it is made of a Cu alloy that satisfies the following: μm or less, average crystal grain size: 50 μm or less. 4 Contains one or two of the following: Cr: 0.05 to 1%, Zr: 0.005 to 0.3%, and further contains one or two of Ti, Nb, V, Ta, Hf, Mo, and W. Species or more: 0.005 to 2%, with the remainder consisting of Cu and unavoidable impurities (wt%), and based on the structure: Average particle size of crystallized products: 10 μm or less, Average particle size of precipitates A Cu alloy lead material for semiconductor devices having high strength and high elongation, characterized in that it is made of a Cu alloy that satisfies the following: diameter: 0.1 μm or less, average crystal grain size: 50 μm or less. 5 Contains one or two of the following: Cr: 0.05-1%, Zr: 0.005-0.3%, and further contains one or more of Ni, Sn, Fe, Co, and Be: 0.005 ~2%, one or more of Mg, Si, Al, Zn, Mn, B, P, Li, Y, and rare earth elements:
0.001 to 1%, with the remainder consisting of Cu and unavoidable impurities (wt%), and according to the structure, the average particle size of the crystallized product: 10 μm or less, the average particle size of the precipitate: 0.1 A Cu alloy lead material for semiconductor devices having high strength and high elongation, characterized in that it is made of a Cu alloy that satisfies the following: μm or less, average crystal grain size: 50 μm or less. 6 Cr: 0.05-1%, Zr: 0.005-0.3%, Contains one or two of the following, and further contains one or more of Ni, Sn, Fe, Co, and Be: 0.005 ~2%, one or more of Ti, Nb, V, Ta, Hf, Mo, and W: 0.005~2%, with the remainder consisting of Cu and unavoidable impurities (wt%). ), and is composed of a Cu alloy that satisfies the following in terms of structure: Average grain size of crystallized products: 10 μm or less, Average grain size of precipitates: 0.1 μm or less, Average grain size of crystal grains: 50 μm or less. Cu alloy lead material for semiconductor devices with high strength and high elongation. 7 Contains one or two of the following: Cr: 0.05-1%, Zr: 0.005-0.3%, and further contains Mg, Si, Al, Zn, Mn, B, P, Li, Y, and rare earth elements. One or more of the following:
0.001 to 1%, one or more of Ti, Nb, V, Ta, Hf, Mo, and W: 0.005 to 2%, with the remainder consisting of Cu and unavoidable impurities (by weight) %), and which satisfies the following in terms of structure: Average grain size of precipitates: 10 μm or less, Average grain size of precipitates: 0.1 μm or less, Average grain size of crystal grains: 50 μm or less. A Cu alloy lead material for semiconductor devices that has high strength and high elongation. 8 Contains one or two of the following: Cr: 0.05-1%, Zr: 0.005-0.3%, and further contains one or more of Ni, Sn, Fe, Co, and Be: 0.005 ~2%, one or more of Mg, Si, Al, Zn, Mn, B, P, Li, Y, and rare earth elements:
0.001 to 1%, one or more of Ti, Nb, V, Ta, Hf, Mo, and W: 0.005 to 2%, with the remainder consisting of Cu and unavoidable impurities (by weight) %), and which satisfies the following in terms of structure: Average grain size of precipitates: 10 μm or less, Average grain size of precipitates: 0.1 μm or less, Average grain size of crystal grains: 50 μm or less. A Cu alloy lead material for semiconductor devices that has high strength and high elongation.