JPS6337622A - Apparatus for manufacturing semiconductor - Google Patents

Abstract

PURPOSE: To set the conductance of a reaction-gas exhaust path arbitrarily, and to keep and adjust the pressure balance of the introduction side and discharge side of a reaction gas easily by regulating a clearance between the inner wall of an outer pipe for exhaust and an end section on the exhaust side of a sleeved inner pipe for a reaction. CONSTITUTION:An outer pipe and an inner pipe 4 are separated by space 5, the space functions as an exhaust path for a reaction gas, and the upper end of, the outer pipe 3 for exhaust is closed and soaking closed space is formed. A lower end is hermetically sealed by a flange 6, an O ring OR, etc., and a gas exhaust port 9 shaped to the lower section of the outer pipe 3 is connected to an exhaust system and also used for evacuating a reaction pipe. Both ends of the inner pipe 4 for a reaction are opened and a lower end section is held stably by a guide ring 14, and an inlet sectional area to the reaction gas path 5 is adjusted by a clearance section 4B between the upper end section of the inner pipe 4 for the reaction and the outer pipe 3 for exhaust, thus controlling the conductance of the reaction gas path. The clearance 4B is set arbitrarily by inserting a spacer ring 10 in proper thickness under the inner pipe 4 for the reaction.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention is directed to an apparatus for manufacturing a harp device (hereinafter simply referred to as H).
This is related to the ``base body repair device''.

[Conventional technology]

During the manufacturing process of semiconductor devices such as LSI, nitrogen, oxygen, silane, ammonia, phosphine, The above treatment is carried out by introducing a reaction gas into the sub-oxygen acid chamber 1 and the like.

Although quartz glass is generally used for the reaction tube, each of the above-mentioned processing steps depends on the temperature, the II of the reaction gas, the mixing ratio, as well as the concentration and pressure of the reaction gas.

In conventional semiconductor manufacturing equipment, this '01 degree and pressure control was determined by making holes in the closed end of the reaction tube and determining the size and number of the holes. Once the reaction tube was manufactured, it had the disadvantage that it could not be easily changed.

[Problems to be solved by the present invention]

The present invention eliminates the above-mentioned conventional drawbacks and improves the conductance of the exhaust gas in the reaction vessel. The purpose of the present invention is to provide a semiconductor device that can be set as follows.

[Means for Solving the Problems and Their Effects] In order to achieve the above object, the semiconductor manufacturing apparatus of the present invention includes a reaction vessel having a reaction gas inlet and an outlet, and a sleeve-shaped reaction inner tube. The exhaust conductance of E is obtained by adjusting the gap between the exhaust side end of the inner reaction tube and the inner wall of the outer exhaust tube. By controlling the exhaust conductance in this manner, it becomes easy to maintain and adjust the pressure balance between the introduction side and the discharge side of the reaction gas,
Optimum conditions for the treatment steps can be found.

Further, the semiconductor manufacturing apparatus of the present invention is characterized in that the sleeve-shaped inner tube for reaction is provided with a curved end at the exhaust end. The bent portion prevents reaction products that tend to accumulate on the exhaust side from accumulating near the exhaust passage and falling into the reaction inner tube, and also prevents deposits in the exhaust passage from peeling off and flowing back. have an effect.

〔Example〕

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIGS. 1 and 2 show an embodiment in which the present invention is applied to a vertical furnace. Figure 1 shows the case where the exhaust side end of the inner reaction tube is cut perpendicular to the central axis, and Figure 2 shows the case where the end is flared with a bent part that opens to the outside. .

In either case, the reaction inner tube has a sleeve-like shape. In FIGS. 1 and 2, IA is the furnace body of the tubular heating furnace 1, and IB is a heater made of a suitable resistor. Reference numeral 2 denotes a reaction vessel housed in the heating furnace 1, which is composed of an outer exhaust tube 3 and an inner reaction tube 4 made of, for example, quartz glass. The outer tube 3 and the inner tube 4 are separated by a space 5, which serves as an exhaust passage for the reaction gas.

The upper end of the exhaust outer pipe 3 is closed to form a uniformly heated closed space. The lower end is hermetically sealed by a flange 6, an O-ring OR, etc. Reference numeral 9 denotes a gas exhaust port provided at the bottom of the outer tube 3, which is connected to the exhaust system and is also used for evacuation of the reaction tube.The inner reaction tube 4 is open at both ends, and the lower end is stabilized by the guide ring 14. is held in

The gap 4B between the upper end of the inner reaction tube 4 and the outer exhaust tube 3 adjusts the cross-sectional view of the entrance to the reaction gas passage 5, thereby controlling the conductance of the reaction gas passage. The gap 4B is arbitrarily set by inserting a spacer (ring) 10 of an appropriate thickness under the inner tube 4 for reaction.

Further, the bent portion 4A that opens outward in FIG. 2 has the effect of suppressing reaction products from flowing back into the inner reaction tube 4.

Up to now, we have described an example in which the reaction vessel is constructed with a double tube, but the present invention is not limited to the double tube, but is applicable to reactions constructed with a single tube, or with multiple tubes of double tube or more. It can also be applied to semiconductor manufacturing equipment having a container. Moreover, it can be applied not only to vertical furnaces but also to horizontal furnaces. Fig. 3 shows an example of a double-tube structure that is applicable to a horizontal furnace.

[Brief explanation of the drawing]

FIGS. 1 and 2 are longitudinal sectional views showing an outline of an embodiment in which the present invention is applied to a vertical furnace. The third example shows an example that is applicable to a horizontal furnace. When applied to a horizontal furnace, support legs 12 are provided outside the reaction inner tube 4 so that the outer tube 3 and the inner tube 4 are arranged concentrically. 1... Heating furnace IA... Furnace body 1B... Heater 2... Reaction vessel 3... Outer exhaust pipe 4... Inner tube for reaction 4A... Inner reaction tube Bending portion 4B of the tube... Gap 5 between the upper end of the inner reaction tube and the inner wall of the outer exhaust tube, which determines the conductance of the reaction gas exhaust passage.
... Reaction gas exhaust passage 6.7 ... Flange 8 ... Reaction gas inlet 9 ... Reaction gas discharge port 10 ... Spacer (ring) 11 ... Support stand 12 ... ... Support leg 13 ... Furnace support stand 14 ... Guide ring g ... Reactant gas OR ... 0 ring

Claims (1)

[Claims] 1) A reaction vessel having a reaction gas inlet and an outlet,
The reaction vessel is composed of a sleeve-shaped inner tube for reaction and an outer tube for exhaust that covers it, and the inner tube for reaction and the outer tube for exhaust are separated by a certain space, and the space is a passage for the reaction gas. However, by adjusting the gap between the inner wall of the outer exhaust pipe and the exhaust side end of the sleeve-shaped inner reaction pipe, the conductance of the reaction gas exhaust passage can be arbitrarily set. Semiconductor manufacturing equipment. 2) A bent portion that opens outward is provided at the exhaust side end of the sleeve-shaped inner reaction tube, and the bent portion prevents the reaction products from peeling off, falling into the inner reaction tube, and flowing back. A semiconductor manufacturing apparatus according to claim 1, characterized in that: