JPS6337194B2 - - Google Patents
Info
- Publication number
- JPS6337194B2 JPS6337194B2 JP16458981A JP16458981A JPS6337194B2 JP S6337194 B2 JPS6337194 B2 JP S6337194B2 JP 16458981 A JP16458981 A JP 16458981A JP 16458981 A JP16458981 A JP 16458981A JP S6337194 B2 JPS6337194 B2 JP S6337194B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- sample
- light
- end point
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 25
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Length Measuring Devices By Optical Means (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16458981A JPS5864384A (ja) | 1981-10-14 | 1981-10-14 | エツチング終点検出方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16458981A JPS5864384A (ja) | 1981-10-14 | 1981-10-14 | エツチング終点検出方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5864384A JPS5864384A (ja) | 1983-04-16 |
JPS6337194B2 true JPS6337194B2 (ko) | 1988-07-25 |
Family
ID=15796044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16458981A Granted JPS5864384A (ja) | 1981-10-14 | 1981-10-14 | エツチング終点検出方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5864384A (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6174407B1 (en) * | 1998-12-03 | 2001-01-16 | Lsi Logic Corporation | Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer |
US20220122805A1 (en) * | 2019-01-22 | 2022-04-21 | Techinsights Inc. | Ion beam delayering system and method, and endpoint monitoring system and method therefor |
-
1981
- 1981-10-14 JP JP16458981A patent/JPS5864384A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5864384A (ja) | 1983-04-16 |
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