JPS6335084B2 - - Google Patents
Info
- Publication number
- JPS6335084B2 JPS6335084B2 JP56191495A JP19149581A JPS6335084B2 JP S6335084 B2 JPS6335084 B2 JP S6335084B2 JP 56191495 A JP56191495 A JP 56191495A JP 19149581 A JP19149581 A JP 19149581A JP S6335084 B2 JPS6335084 B2 JP S6335084B2
- Authority
- JP
- Japan
- Prior art keywords
- platinum
- thin film
- protective film
- temperature sensor
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 70
- 229910052697 platinum Inorganic materials 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 30
- 230000001681 protective effect Effects 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 150000003057 platinum Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004110 Zinc silicate Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 230000031070 response to heat Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 1
- 235000019352 zinc silicate Nutrition 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
本発明は白金抵抗薄膜を用いた薄膜白金温度セ
ンサに関する。
従来精密な温度センサとしては白金測温抵抗体
があり、また比較的安価で大量生産できる温度セ
ンサとしてはサーミスタがある。
一方、最近のエレクトロニクスの急激な進歩に
より、家電用や自動車用などの精密温度センサを
中心に堅牢で大量生産でき、かつ高精度の温度セ
ンサが求められるようになつてきており、用途に
より安価、小形、高精度、温度範囲が広く直線的
な変化をするもの、振動などに対して強いもの、
熱応答性の良いものが要求されている。
これらの要求のうち温度精度や測定範囲、直線
性などの特性に関して最も優れているものとして
白金測温抵抗体があるが、周知のように白金測温
抵抗体は、
(1) バルクの白金線を材料とするため、50Ω，
100Ωの低抵抗しか作れず、回路設計時、接点
抵抗や信号入力回路の線抵抗が大きな影響を与
えるため、３線式，４線式など測定回路の設計
方法に細心の注意を要する。
(2) 構造上、熱容量が大きいために熱に対する応
答性が悪く、また振動、、衝撃に対して弱いた
め使用、保管、輪送などの際に破損しやすい。
(3) 高価な材料を多量に使用し、また製造工程が
複雑で量産化が困難なため価格が高い。
(4) 小形化が困難である。
などの欠点を有している。
一方、サーミスタでは比較的使用温度範囲が狭
く、抵抗値も曲線的に変化するため、温度の補正
回路を必要とするなどの欠点を有する。
また、白金膜の抵抗値変化を利用した温度セン
サとしては厚膜白金測温素止があるが、厚膜であ
るため白金の使用量が多く、非常に高価格であ
る。また厚膜であるためガラス溶融体が主成分で
あること、不純物が入りやすいことなどから特性
的にもばらつきが大きく高精度のものができてい
ない。
そこで最近白金薄膜の抵抗値変化を利用した薄
膜白金温度センサが注目されている。しかし白金
はバルクの状態では非常に安定な金属であるが、
最も安定な白金とはいえ高温になると種々の金属
と反応しやすくなるため、保護膜の材料選定が重
要になり、現在高温から低温まで測定できる精度
の高いセンサは開発、実用化されていない。
本発明は以上の点に鑑み、広い温度範囲で高精
度かつ高い安定性を有する薄膜白金温度センサを
提供することを目的とする。
この目的の達成するために本発明は絶縁基体上
に白金抵抗薄膜と電極を形成し、この白金抵抗薄
膜上にSiC，SiO2またはTiN単独または、これら
の化合物よりなる保護膜を形成したものである。
また本発明は電極上および前記保護膜の上にさ
らにガラスによる保護膜を形成したものである。
以下、本発明の実施例について図面とともに説
明する。
第１図は本発明の一実施例の薄膜白金温度セン
サの断面図である。図において、１は幅５mm、長
さ20mm、厚さ１mmのアルミナ基板よりなる絶縁基
体、２はこの絶縁基体１上に、白金を約3μm着膜
して形成された白金抵抗薄膜、３はこの白金抵抗
薄膜２と接続されるリード線引き出し用の電極、
４は電極３に接続されるリード線、５は白金抵抗
薄膜２を被覆する約1μm厚のTiNよりなる保護膜
で、真空蒸着、スパツタなどにより形成される。
この温度センサにおけるTiNよりなる保護膜
５は、それ自体高温に耐え、また感温体である白
金抵抗薄膜２への拡散や反応を生じない。また他
の金属の白金抵抗薄膜２への拡散や反応を起こす
のを防ぐ障壁となる。このため温度センサの初期
特性（抵抗値、抵抗温度係数）のばらつきや長期
使用時（特に高温における使用の際）の特性の劣
化が小さいため信頼性が高くなり、白金測温抵抗
体と同等もしくはそれ以上の指示温度精度が得ら
れる。
また、TiNよりなる保護膜５は非常に薄いた
めに熱応答性に優れている。本実施例の場合、熱
応答時間（63％点）は1.2秒であり、一方、保護
膜としてガラスを用いた場合は2.1秒であつた。
第２図に第１の実施例お温度センサの電極３の
部分を、珪酸鉛を主成分とするガラスペーストで
約500μm厚で覆い、920℃で10分間焼成し、溶融
固化させてガラス保護膜６を形成した実施例を示
す。このように電極３の部分をガラスで覆うこと
により電極部分を保護することができる。
第３図は本発明の第３の実施例の断面図であ
る。この実施例の温度センサは第１の実施例の
TiNよりなる保護膜５の上および電極３の上に
ガラスよりなる保護膜７を形成たものである。こ
のガラスよりなる保護膜７は珪酸鉛を主成分とす
るガラスペーストで厚み約50μm（電極３の上は約
500μm）に被覆した後、920℃で10分間焼成して
溶融固化させて形成したものである。
第１表はこの実施例の温度センサと比較のため
にガラスのみを保護膜とした温度センサの抵抗温
度係数（０℃，100℃基準）のばらつき（初期特
性）を示すものである。
The present invention relates to a thin film platinum temperature sensor using a platinum resistive thin film. Conventionally, there is a platinum resistance temperature sensor as a precise temperature sensor, and a thermistor is a temperature sensor that can be mass-produced at relatively low cost. On the other hand, due to recent rapid advances in electronics, there is a growing need for robust, mass-produced, and highly accurate temperature sensors, mainly for precision temperature sensors for home appliances and automobiles. Small size, high precision, wide temperature range and linear changes, strong against vibration, etc.
A material with good thermal response is required. Among these requirements, platinum resistance thermometers are the most superior in terms of characteristics such as temperature accuracy, measurement range, and linearity.As is well known, platinum resistance thermometers are: (1) bulk platinum wire; Since the material is 50Ω,
Only a low resistance of 100Ω can be created, and contact resistance and the wire resistance of the signal input circuit have a large effect on circuit design, so careful attention must be paid to how to design the measurement circuit, such as a 3-wire or 4-wire system. (2) Due to its structure, it has a large heat capacity, so it has poor response to heat, and is vulnerable to vibrations and shocks, so it is easily damaged during use, storage, transportation, etc. (3) It is expensive because it uses a large amount of expensive materials and the manufacturing process is complicated, making mass production difficult. (4) It is difficult to downsize. It has drawbacks such as: On the other hand, a thermistor has a relatively narrow operating temperature range and its resistance value changes in a curved manner, so it has drawbacks such as requiring a temperature correction circuit. Further, as a temperature sensor that utilizes the change in resistance of a platinum film, there is a thick film platinum temperature sensor, but because it is a thick film, a large amount of platinum is used and the price is very high. Furthermore, because the film is thick, the main component is molten glass, and impurities tend to enter, resulting in wide variations in characteristics and making it difficult to manufacture high-precision products. Therefore, thin film platinum temperature sensors that utilize changes in the resistance value of platinum thin films have recently attracted attention. However, although platinum is a very stable metal in its bulk state,
Even though platinum is the most stable metal, it easily reacts with various metals at high temperatures, so the selection of materials for the protective film is important, and currently no highly accurate sensors that can measure from high to low temperatures have been developed or put into practical use. In view of the above points, it is an object of the present invention to provide a thin film platinum temperature sensor that has high accuracy and high stability over a wide temperature range. In order to achieve this object, the present invention forms a platinum resistive thin film and an electrode on an insulating substrate, and a protective film made of SiC, SiO 2 or TiN alone or a compound of these is formed on the platinum resistive thin film. be. Further, in the present invention, a protective film made of glass is further formed on the electrode and the above-mentioned protective film. Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a thin film platinum temperature sensor according to an embodiment of the present invention. In the figure, 1 is an insulating base made of an alumina substrate with a width of 5 mm, a length of 20 mm, and a thickness of 1 mm, 2 is a platinum resistive thin film formed by depositing platinum to a thickness of about 3 μm on this insulating base 1, and 3 is a platinum resistive thin film formed on this insulating base 1. an electrode for drawing out lead wires connected to the platinum resistance thin film 2;
4 is a lead wire connected to the electrode 3, and 5 is a protective film made of TiN having a thickness of about 1 μm and covering the platinum resistive thin film 2, and is formed by vacuum evaporation, sputtering, or the like. The protective film 5 made of TiN in this temperature sensor can withstand high temperatures by itself, and does not cause diffusion or reaction to the platinum resistive thin film 2, which is a temperature sensor. It also acts as a barrier to prevent other metals from diffusing into the platinum resistor thin film 2 or causing reactions. As a result, the temperature sensor's initial characteristics (resistance value, temperature coefficient of resistance) are less likely to vary, and its characteristics deteriorate less during long-term use (especially when used at high temperatures), making it highly reliable and comparable to or better than platinum resistance thermometers. Greater accuracy of the indicated temperature can be obtained. Furthermore, since the protective film 5 made of TiN is very thin, it has excellent thermal responsiveness. In the case of this example, the thermal response time (63% point) was 1.2 seconds, while it was 2.1 seconds when glass was used as the protective film. Figure 2 shows the first embodiment.The electrode 3 part of the temperature sensor is covered with a glass paste containing lead silicate as a main component to a thickness of about 500 μm, and then baked at 920°C for 10 minutes to melt and solidify it, forming a glass protective film. An example in which 6 was formed is shown below. By covering the electrode 3 portion with glass in this way, the electrode portion can be protected. FIG. 3 is a sectional view of a third embodiment of the invention. The temperature sensor of this embodiment is similar to that of the first embodiment.
A protective film 7 made of glass is formed on a protective film 5 made of TiN and on the electrode 3. The protective film 7 made of glass is made of glass paste whose main component is lead silicate and has a thickness of about 50 μm (the area above the electrode 3 is about 50 μm thick).
500 μm) and then baked at 920°C for 10 minutes to melt and solidify. Table 1 shows variations (initial characteristics) in the temperature coefficient of resistance (0°C, 100°C reference) of the temperature sensor of this embodiment and the temperature sensor with only glass as a protective film for comparison.
【表】
第２表は同様に本実施例の温度センサとガラス
のみを保護膜とした温度センサ（比較例）つい
て、＋500℃，2000時間の高温放置した場合の０℃
における抵抗値変化率と抵抗温度係数の変化を示
したものである。[Table] Table 2 also shows the temperature sensor of this example and the temperature sensor with only glass as a protective film (comparative example) at 0°C when left at a high temperature of +500°C for 2000 hours.
The figure shows the change in resistance value change rate and resistance temperature coefficient at .
【表】
TiNなしにガラスのみを保護膜とした場合は、
ガラスの焼成時やセンサを高温で使用する際に、
ガラスに含まれる鉛などの金属が白金薄膜に拡散
しその特性を劣化させる。しかしTiNとガラス
の２層構造とした場合は、TiNが拡散障壁とな
り、金属の白金薄膜への拡散を防ぐことができ
る。
なお、前記第１〜第３の実施例においては、保
護膜５としてTiNを用いたものについて説明し
たが、SiCやSiO2を用いても良い。またこれら
TiN，SiC，SiO2を単独で用いる場合に限らず、
これらの２種以上の化合物を用いても良い。また
ガラス保護膜６，７としては硼珪酸系、珪酸亜鉛
系なども使用可能である。
第３表は保護膜としてSiC，SiO2を単独で、ま
たは混合して用いた場合の実施例と、保護膜とし
てガラスを用いた場合の比較例とについて、熱応
答時間と抵抗温度係数を比較して示したものであ
る。[Table] When using only glass as a protective film without TiN,
When firing glass or using sensors at high temperatures,
Metals such as lead contained in glass diffuse into the platinum thin film and deteriorate its properties. However, in the case of a two-layer structure of TiN and glass, TiN acts as a diffusion barrier and can prevent metal from diffusing into the platinum thin film. In the first to third embodiments, TiN was used as the protective film 5, but SiC or SiO 2 may also be used. Also these
Not only when using TiN, SiC, SiO 2 alone,
Two or more of these compounds may be used. Further, as the glass protective films 6 and 7, borosilicate-based materials, zinc silicate-based materials, etc. can also be used. Table 3 compares the thermal response time and temperature coefficient of resistance for examples in which SiC and SiO 2 are used alone or in combination as the protective film, and comparative examples in which glass is used as the protective film. This is what was shown.
【表】
以上のように本発明の温度センサは構成したの
で以下のような優れた効果が得られる。
(1) 保護膜と白金薄膜との拡散や反応を起こさな
いばかりでなり、他の金属と白金薄膜との拡散
や反応を起こすのを防ぐ障壁となるため、セン
サの初期特性（抵抗値，抵抗温度係数）のばら
つきや、長期使用時（特に高温における使用の
際）の特性の劣化が小さいため信頼性が高くな
り、白金測温抵抗体と同等もしくはそれ以上の
指示温度精度が得られる。
(2) 温度―電気抵抗が直線変化するため補正が不
要となり、回路が単純化できる。
(3) 絶縁基体上に白金薄膜を着膜するため、振動
や衝撃に強い。
(4) 量産化しやすく安価なものができる。[Table] Since the temperature sensor of the present invention is configured as described above, the following excellent effects can be obtained. (1) The initial characteristics of the sensor (resistance value, Because there is little variation in temperature coefficient) and little deterioration of characteristics during long-term use (especially when used at high temperatures), reliability is high, and temperature indication accuracy equal to or higher than that of platinum resistance thermometers can be obtained. (2) Since the temperature-electrical resistance changes linearly, no correction is necessary, and the circuit can be simplified. (3) A thin platinum film is deposited on the insulating substrate, making it resistant to vibration and impact. (4) It can be mass-produced easily and inexpensively.
第１図は本発明における一実施例の温度センサ
の断面図、第２図および第３図は同じく他の実施
例の断面図である。
１……絶縁基体、２……白金抵抗薄膜、３……
電極、５……保護膜、６，７……ガラス保護膜。
FIG. 1 is a sectional view of a temperature sensor according to one embodiment of the present invention, and FIGS. 2 and 3 are sectional views of other embodiments. 1... Insulating substrate, 2... Platinum resistive thin film, 3...
Electrode, 5... protective film, 6, 7... glass protective film.
Claims (1)
この白金抵抗薄膜上にSiC，SiO2またはTiN単独
またはこれらの化合物よりなる保護膜を形成した
薄膜白金温度センサ。 ２ 絶縁基体上に白金抵抗薄膜と電極を形成し、
この白金抵抗薄膜上にSiC，SiO2またはTiN単独
またはこれらの化合物よりなる第１の保護膜を形
成し、前記電極上と前記第１の保護膜上にガラス
よりなる第２の保護膜を形成した薄膜白金温度セ
ンサ。[Claims] 1. Forming a platinum resistive thin film and an electrode on an insulating substrate,
This thin film platinum temperature sensor has a protective film made of SiC, SiO 2 or TiN alone or a compound of these formed on this platinum resistance thin film. 2 Forming a platinum resistive thin film and electrodes on an insulating substrate,
A first protective film made of SiC, SiO 2 or TiN alone or a compound thereof is formed on the platinum resistive thin film, and a second protective film made of glass is formed on the electrode and the first protective film. thin film platinum temperature sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19149581A JPS5892201A (en) | 1981-11-27 | 1981-11-27 | Thin film platinum temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19149581A JPS5892201A (en) | 1981-11-27 | 1981-11-27 | Thin film platinum temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5892201A JPS5892201A (en) | 1983-06-01 |
| JPS6335084B2 true JPS6335084B2 (en) | 1988-07-13 |
Family
ID=16275587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19149581A Granted JPS5892201A (en) | 1981-11-27 | 1981-11-27 | Thin film platinum temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5892201A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6140513A (en) * | 1984-08-01 | 1986-02-26 | Hitachi Ltd | Membrane type air flow amount apparatus |
| JPS61148732A (en) * | 1984-12-21 | 1986-07-07 | エヌオーケー株式会社 | Thermosensitive element |
| JPS61181104A (en) * | 1985-02-06 | 1986-08-13 | シャープ株式会社 | Platinum temperature measuring resistor |
| US4791398A (en) * | 1986-02-13 | 1988-12-13 | Rosemount Inc. | Thin film platinum resistance thermometer with high temperature diffusion barrier |
| DE4328791C2 (en) * | 1993-08-26 | 1997-07-17 | Siemens Matsushita Components | Hybrid thermistor temperature sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52104063A (en) * | 1976-02-27 | 1977-09-01 | Hitachi Ltd | Production of surface protection film in electronic parts |
| JPS52116076A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Preparation of film for protecting surface of electronic parts |
| JPS5355992A (en) * | 1976-10-29 | 1978-05-20 | Nec Corp | Semiconductor device |
| JPS54107759A (en) * | 1978-02-10 | 1979-08-23 | Matsushita Electric Ind Co Ltd | Temperature-humidity sensor |
| JPS56134702A (en) * | 1980-02-29 | 1981-10-21 | Leeds & Northrup Co | Thin film resistance thermometer having prescribed resistance temperature coefficient and method of producing same |
-
1981
- 1981-11-27 JP JP19149581A patent/JPS5892201A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52104063A (en) * | 1976-02-27 | 1977-09-01 | Hitachi Ltd | Production of surface protection film in electronic parts |
| JPS52116076A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Preparation of film for protecting surface of electronic parts |
| JPS5355992A (en) * | 1976-10-29 | 1978-05-20 | Nec Corp | Semiconductor device |
| JPS54107759A (en) * | 1978-02-10 | 1979-08-23 | Matsushita Electric Ind Co Ltd | Temperature-humidity sensor |
| JPS56134702A (en) * | 1980-02-29 | 1981-10-21 | Leeds & Northrup Co | Thin film resistance thermometer having prescribed resistance temperature coefficient and method of producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5892201A (en) | 1983-06-01 |
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