JPS633468B2 - - Google Patents
Info
- Publication number
- JPS633468B2 JPS633468B2 JP53043868A JP4386878A JPS633468B2 JP S633468 B2 JPS633468 B2 JP S633468B2 JP 53043868 A JP53043868 A JP 53043868A JP 4386878 A JP4386878 A JP 4386878A JP S633468 B2 JPS633468 B2 JP S633468B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- transfer
- charge carriers
- charge
- transfer channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002800 charge carrier Substances 0.000 claims description 87
- 238000003860 storage Methods 0.000 claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 64
- 230000001902 propagating effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 description 22
- 238000009825 accumulation Methods 0.000 description 18
- 238000001514 detection method Methods 0.000 description 17
- 238000002347 injection Methods 0.000 description 17
- 239000007924 injection Substances 0.000 description 17
- 239000012212 insulator Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000001444 catalytic combustion detection Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4386878A JPS54136277A (en) | 1978-04-14 | 1978-04-14 | Charge transfer element |
| US06/880,097 US4799244A (en) | 1978-04-13 | 1986-06-30 | Surface acoustical wave charge transfer device having a plurality of stationary charge carrier storage portions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4386878A JPS54136277A (en) | 1978-04-14 | 1978-04-14 | Charge transfer element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60238298A Division JPS61159765A (ja) | 1985-10-24 | 1985-10-24 | 電荷転送素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54136277A JPS54136277A (en) | 1979-10-23 |
| JPS633468B2 true JPS633468B2 (https=) | 1988-01-23 |
Family
ID=12675668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4386878A Granted JPS54136277A (en) | 1978-04-13 | 1978-04-14 | Charge transfer element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54136277A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61159765A (ja) * | 1985-10-24 | 1986-07-19 | Fuji Photo Film Co Ltd | 電荷転送素子 |
-
1978
- 1978-04-14 JP JP4386878A patent/JPS54136277A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54136277A (en) | 1979-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3858232A (en) | Information storage devices | |
| US4229752A (en) | Virtual phase charge transfer device | |
| US3789267A (en) | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel | |
| US3651349A (en) | Monolithic semiconductor apparatus adapted for sequential charge transfer | |
| US4633285A (en) | Acoustic charge transport device and method | |
| US4012759A (en) | Bulk channel charge transfer device | |
| US3988619A (en) | Random access solid-state image sensor with non-destructive read-out | |
| US4611140A (en) | Saw-CTD parallel to serial imager | |
| US4600853A (en) | Saw-CTD serial to parallel imager and waveform recorder | |
| US4807005A (en) | Semiconductor device | |
| US4799244A (en) | Surface acoustical wave charge transfer device having a plurality of stationary charge carrier storage portions | |
| US3697786A (en) | Capacitively driven charge transfer devices | |
| JPS6156630B2 (https=) | ||
| US4122543A (en) | Non-volatile memory for fast signals | |
| US4725872A (en) | Fast channel single phase buried channel CCD | |
| JPH0257704B2 (https=) | ||
| JPS633468B2 (https=) | ||
| JPS61198676A (ja) | 半導体集積回路装置 | |
| JPH06216161A (ja) | 狭いチャネル効果をもつ擬似２相電荷結合素子 | |
| US4321584A (en) | Charge coupled digital-to-analog converter | |
| US3825996A (en) | Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit | |
| Papanicolaou et al. | A monolithic surface acoustic wave charge transfer device and its applications | |
| JPS633467B2 (https=) | ||
| JP3060649B2 (ja) | 半導体装置及びその駆動方法 | |
| US4675714A (en) | Gapless gate charge coupled device |