JPS633389B2 - - Google Patents

Info

Publication number
JPS633389B2
JPS633389B2 JP58174606A JP17460683A JPS633389B2 JP S633389 B2 JPS633389 B2 JP S633389B2 JP 58174606 A JP58174606 A JP 58174606A JP 17460683 A JP17460683 A JP 17460683A JP S633389 B2 JPS633389 B2 JP S633389B2
Authority
JP
Japan
Prior art keywords
mosfet
decoder
node
circuit
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58174606A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6066391A (ja
Inventor
Kyokazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58174606A priority Critical patent/JPS6066391A/ja
Publication of JPS6066391A publication Critical patent/JPS6066391A/ja
Publication of JPS633389B2 publication Critical patent/JPS633389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP58174606A 1983-09-21 1983-09-21 半導体回路 Granted JPS6066391A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58174606A JPS6066391A (ja) 1983-09-21 1983-09-21 半導体回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58174606A JPS6066391A (ja) 1983-09-21 1983-09-21 半導体回路

Publications (2)

Publication Number Publication Date
JPS6066391A JPS6066391A (ja) 1985-04-16
JPS633389B2 true JPS633389B2 (2) 1988-01-23

Family

ID=15981517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58174606A Granted JPS6066391A (ja) 1983-09-21 1983-09-21 半導体回路

Country Status (1)

Country Link
JP (1) JPS6066391A (2)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6325879A (ja) * 1986-07-17 1988-02-03 Toshiba Corp スタテイツク型半導体メモリ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500799A (en) * 1980-07-28 1985-02-19 Inmos Corporation Bootstrap driver circuits for an MOS memory

Also Published As

Publication number Publication date
JPS6066391A (ja) 1985-04-16

Similar Documents

Publication Publication Date Title
US4095281A (en) Random access-erasable read only memory cell
JPH0143400B2 (2)
US4710900A (en) Non-volatile semiconductor memory device having an improved write circuit
JPS63179617A (ja) Mos技術を応用した電圧スイッチ回路
US4565932A (en) High voltage circuit for use in programming memory circuits (EEPROMs)
JPS631778B2 (2)
JPS62117196A (ja) 電気的に消去可能なプログラム可能なメモリ・セルとその製法
US4159540A (en) Memory array address buffer with level shifting
JPS6214520A (ja) メモリの出力バツフア回路
US4635229A (en) Semiconductor memory device including non-volatile transistor for storing data in a bistable circuit
JPS649680B2 (2)
EP0063357B1 (en) Drive circuit
US4224686A (en) Electrically alterable memory cell
JPH026159B2 (2)
US3875567A (en) Memory circuit using variable threshold level field-effect device
JPH0766675B2 (ja) プログラマブルrom
JPS633389B2 (2)
US6181610B1 (en) Semiconductor device having current auxiliary circuit for output circuit
JPH0516119B2 (2)
JPS61284896A (ja) 不揮発性プログラマブル・スタチツク・メモリ・セル
JPS5938674B2 (ja) 記憶装置
JPH07254288A (ja) 半導体記憶装置
JPS6235191B2 (2)
JP3119740B2 (ja) 半導体メモリの内部電源切換え回路
JP2003091995A (ja) 半導体記憶装置およびそのデータ読み出し方法