JPS63315599A - Method for growing inorganic compound single crystal - Google Patents
Method for growing inorganic compound single crystalInfo
- Publication number
- JPS63315599A JPS63315599A JP14866887A JP14866887A JPS63315599A JP S63315599 A JPS63315599 A JP S63315599A JP 14866887 A JP14866887 A JP 14866887A JP 14866887 A JP14866887 A JP 14866887A JP S63315599 A JPS63315599 A JP S63315599A
- Authority
- JP
- Japan
- Prior art keywords
- group
- single crystal
- elements
- compound
- inorganic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 23
- 150000002484 inorganic compounds Chemical class 0.000 title claims abstract description 7
- 229910010272 inorganic material Inorganic materials 0.000 title claims abstract description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 239000000155 melt Substances 0.000 claims description 6
- 239000002775 capsule Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 abstract description 30
- 230000002194 synthesizing effect Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 101100119193 Schizosaccharomyces pombe (strain 972 / ATCC 24843) eta2 gene Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野−１
本発明は、周期律表第ＩＩＩｂ族及び第Ｖｂ族元素から
なる無機化合物（以下ｆｎｌ−Ｖ化合物１という。）の
単結晶の１＆艮方法に関する。Detailed Description of the Invention [Industrial Field of Application-1] The present invention relates to a single crystal of an inorganic compound (hereinafter referred to as fnl-V compound 1) consisting of elements of group IIIb and group Vb of the periodic table. Regarding the method.
（従来の技術１
［１−Ｖ化合物の単結晶は、電子の易動度が大であるの
で高周波用又は高速処理用の素子、例えばＦＥＴ、ＩＣ
等の製造に用いられている。(Prior art 1) Single crystals of 1-V compounds have high electron mobility, so they are suitable for use in high-frequency or high-speed processing devices, such as FETs and ICs.
It is used in the production of products such as
これらの素子の製造には、Ｃ，Ｂ等の不純物の含有量の
少ない高純度の単結晶から切出した基板を用いることが
必要とされる。これは、上記の素子は、これらの基板に
Ｓｉ等のイオンをイオン注入して製造するが、不純物、
特にＢの含有量が大であると、イオン注入したイオンの
活性化率が低くなる、あるいは、そのばらつきが大きく
なる等の問題が生じるからである。For manufacturing these devices, it is necessary to use a substrate cut from a high-purity single crystal with a low content of impurities such as C and B. This is because the above elements are manufactured by implanting ions such as Si into these substrates, but impurities,
In particular, if the content of B is high, problems such as a decrease in the activation rate of implanted ions or an increase in variation will occur.
従来、■−Ｖ化合物単結晶は、液体カプセル引上げ法（
以下ｒＬＥｃ法」という、）により単結晶を成長させる
装置（以下「ＬＥＣ装置」という。）内で、高純度の第
［ｌｂ族元素及び第Ｖｂ族元素を直接反応させて■−■
化合物を合成し、その化合物の融液を得た後、直ちに、
その融液から単結晶を成長させる方法が採用されていた
。これは、ＬＥＣ装置内で、直接■−■化合物を合成す
るので、不要な不純物の混入の機会が少なく、従って、
高純度の単結晶を得やすいがらである。Conventionally, ■-V compound single crystals were produced using the liquid capsule pulling method (
In an apparatus (hereinafter referred to as "LEC apparatus") for growing single crystals by the rLEc method (hereinafter referred to as "rLEc method"), high purity Group Ib elements and Group Vb elements are directly reacted.
Immediately after synthesizing a compound and obtaining a melt of the compound,
A method was adopted in which a single crystal was grown from the melt. Since the compound ■-■ is directly synthesized within the LEC device, there is less chance of contamination with unnecessary impurities, and therefore,
Although it is easy to obtain high purity single crystals.
また、その際、水を２００１）ｌ）ＩＩ（重量比、以下
同様。）以Ｊｌ−有する三酸化二ほう素をカプセル剤と
して用いると、Ｂの含有量が少ない高純度のＩＩｉ結品
が得られることが知られていた。この場合、水の含有量
が大である程、単結晶中のＢの含有量が低下することも
知られていた。In addition, in this case, if diboron trioxide having a water content of 2001)l)II (weight ratio, the same applies hereinafter) is used as a capsule, a high purity IIi crystal with a low content of B can be obtained. It was known that In this case, it was also known that the higher the water content, the lower the B content in the single crystal.
［発明が解決しようとする問題点」
しかしながら、三酸化二ほう素の水の含有量が大となる
程単結晶化が困難になり、特に６００１１１１ ＩＩＩ
を超えると殆ど単結晶化しないという問題があった。[Problems to be solved by the invention] However, the larger the water content of diboron trioxide, the more difficult it becomes to form a single crystal, especially 6001111 III.
There is a problem in that when the temperature exceeds 100%, single crystallization hardly occurs.
１問題点を解決するための手段」
本発明者等は、高純度の■−■化合物単結晶を歩留りよ
＜！！！造する方法を開発することを目的として、鋭意
研究を重ねた結果、水を多頃に含有する三酸化二ほう素
で第１１１ｂ族及び第Ｖｂ族元素の混合物を覆って合成
したｎｒ −ｖ化合物を用いることにより上記の目的を
達せられることを見出だし本発明に到達したものである
。1. Means for Solving Problem 1" The present inventors have achieved a high yield of high-purity ■-■ compound single crystals. ! ! As a result of intensive research with the aim of developing a method for producing nr-v compounds, an nr-v compound was synthesized by covering a mixture of group 111b and group Vb elements with diboron trioxide containing a large amount of water. The present invention has been achieved by discovering that the above object can be achieved by using the following.
すなわち、本発明の上記の目的は、■−■化合物の融液
から、ＬＥＣ法により単結晶を成長させる方法において
、上記■−■化合物として、第ｌｌｌ１）族元素及び第
Ｖｂ族元素の混合物を、水を少なくと６１０００１）１
１１１１含有する三酸化二ほう素の融液で覆い、かつ、
不活性な素材でできたるつぼ中で反応させて合成したも
のである方法により達せられる。That is, the above-mentioned object of the present invention is to provide a method for growing a single crystal from a melt of a ■-■ compound by the LEC method, in which a mixture of a group III1) element and a group Vb element is used as the compound ■-■. , water at least 610001)1
covered with a melt of diboron trioxide containing 1111, and
It is achieved by a method in which it is synthesized by reaction in a crucible made of inert materials.
■−■化合物としては、ＧａＡｓ、ＩｎＰ、ＩｎＡｓ、
Ｇ ａｋｒ Ｉ ｒ＋、Ａ ｓ（０、００１≦ ８ ≦
０．０１ ）、ＧａＰ等がある。■-■ Compounds include GaAs, InP, InAs,
G akr I r+, A s (0,001≦8≦
0.01), GaP, etc.
ＩＩＩ −Ｖ化合物は、不活性な素材で作られたるっば
を用いて、そのるつぼ中骨所望型の第１１１族冗素及び
第Ｖｂ族元素を反応させて製造する。The III-V compound is produced by using a crucible made of an inert material and reacting the desired type of group 111 ferrous element and group Vb element in the crucible.
なお、「不活性」とは、高温、特にＩＩＩ −Ｖ化合物
の融、α付近の温度で、■−■化合物と反応しないこと
をいう。Incidentally, "inert" means that it does not react with the ■-■ compounds at high temperatures, particularly at temperatures around the melting point and α of the III-V compounds.
不活性な素材としては、１）ＢＮ、ＡＩＮ笠がある。Examples of inert materials include 1) BN and AIN shade.
不活性な素材で作られたるつぼを用いない場合、■−■
化合物又は単結晶が、るつぼの成分に汚染されるので好
ましくない。If a crucible made of inert material is not used, ■−■
This is not preferred because the compound or single crystal will be contaminated by the components of the crucible.
第ＩＩＩｂ族元素と第Ｖｂ族元素を反応させる際には、
混合物を三酸化二ほう素で覆いながら反応させることが
必要である。これは、Ａｓ、Ｐ等の第Ｖ Ｉ３族元素の
蒸気圧が高く、反応中に揮発するからである。さらに、
第Ｖｂ族元素の揮発を防市するために、■−■化合物の
合成の際に５へ、１００ｋｇ／ｃｍ２程度の不活性気体
の圧力をかけるのが好ましい。また、三酸化二ほう素は
、透明なＦＡ液を生じ、かつ、■−■化合物の融液より
地中が小さいのでカプセル剤として適当である。When reacting group IIIb elements and group Vb elements,
It is necessary to react while covering the mixture with diboron trioxide. This is because Group VI3 elements such as As and P have a high vapor pressure and volatilize during the reaction. moreover,
In order to prevent volatilization of Group Vb elements, it is preferable to apply an inert gas pressure of about 100 kg/cm 2 to 5 during the synthesis of the compound (1)-(3). Further, diboron trioxide produces a transparent FA liquid and is suitable for use as a capsule agent because it has a smaller underground surface than the melt of the compound (1)-(2).
化合物の製造装置としては、特別の装置を用いてもよい
が、通常のＬ Ｅ Ｃ装（６を用いるのがより簡単で好
ましい。Although a special device may be used for producing the compound, it is easier and preferable to use a normal LEC device (6).
Ｉｎ −Ｖ化合物の合成の際に用いられる三酸化二ほう
素は、水を少なくと６１０００１＋ｐ＋＠含イ１′シて
いることが必要である。水の含有量が、１ （＞ （１
（１旧１１１１未満であると得られた多結晶中の不純物
、例えば、ほう素の含有量が高くなり好ましくない。Diboron trioxide used in the synthesis of the In -V compound must contain at least 610001+p+@1' of water. The water content is 1 (> (1
(If it is less than 1111, the content of impurities such as boron in the obtained polycrystal will increase, which is not preferable.
また、水の含有酸は、５０００ ｐｐ＋ａ以下であると
より好ましい。Further, the acid content of water is more preferably 5000 pp+a or less.
第１ＩＩ Ｉ）族元素と第Ｖｂ族元素の混合物を反応さ
せるには、その反応が生じる温度以上、好ましくは■−
■化合物の融点以上に加熱する。通常は、約７００〜約
１５００℃の範囲に加熱して反応させる。例えば、Ｇａ
Ａｓを合成する場合は、約８００℃以上好ましくは、約
１２４０℃に加熱する。In order to react a mixture of a group 1II I) element and a group Vb element, the temperature at which the reaction occurs or higher, preferably -
■Heat above the melting point of the compound. Usually, the reaction is carried out by heating to a temperature in the range of about 700 to about 1500°C. For example, Ga
When synthesizing As, heating is performed to about 800°C or higher, preferably about 1240°C.
単結晶の成長方法は、ＬＥＣ法による。これは、ＬＥＣ
法は、るつぼの素材としてｐＢＮ、、ＡＩＮ等の不活性
な素材が用いることができるので高純度の単結晶を製造
することができるからである。The single crystal growth method is based on the LEC method. This is LEC
This is because in this method, inert materials such as pBN, AIN, etc. can be used as the material for the crucible, so that highly pure single crystals can be produced.
単結晶の成長に用いる三酸化二ほう素は、水の含有酸が
多いと９１結晶の歩留りが低下するので、乾燥したもの
が好ましい。この場合、水の含有酸は、ＧＯＯｐ、論以
下が好ましく、３００ｐｐ瞳以下であると特に好ましい
。The diboron trioxide used for single crystal growth is preferably dried, since the yield of 91 crystals decreases if there is a large amount of acid in water. In this case, the acid content of water is preferably GOOp, less than 20%, and particularly preferably less than 300 pp pupil.
得られた■−■化合物を用いて単結晶を成ＦＣさせるに
は、当該化合物を冷却して得た多結晶を、その製造装置
から取出した後、Ｌ Ｅ Ｃ装置内に装入して再融解し
て、ＬＥＣ法により成長させるのが、通常であるが、■
−■化合物の合成に用いたＬＥご装置ｄ中で、化合物の
合成工程に続いて、同一の装置内で単結晶を成長させて
もよい。後者の場合、化合物の合成に用いた三酸化二ほ
う素は、水の含有量が単結晶成長に用いるには多すぎる
ため、予め別の容器に収容してＬ［ＥＣ装置内に配置し
ておいた乾燥した三酸化二は）素を、単結晶成長の直１
ＶｉＩにるつぼ内に追加して、三酸化二ほう素の水の含
有量を下げる等の処置をとるとよい。In order to form a single crystal by FC using the obtained compound ■-■, the polycrystal obtained by cooling the compound is taken out from the manufacturing equipment, and then charged into the LEC equipment and recycled. Normally, it is melted and grown using the LEC method, but ■
-■ In the LE apparatus d used for compound synthesis, a single crystal may be grown in the same apparatus following the compound synthesis step. In the latter case, the diboron trioxide used to synthesize the compound contains too much water to be used for single crystal growth, so it is stored in a separate container in advance and placed in the L[EC device]. The dried ditrioxide (dried)
It is recommended to take measures such as adding ViI to the crucible to lower the water content of diboron trioxide.
その他のＩｌｊ結品の成長条件は、通常のＬＥＣ法と同
様でよい。Other Ilj crystal growth conditions may be the same as those for the normal LEC method.
１発明の効果１
本発明は、次のような′ｊＡ、？Ｆな効果があるので産
業Ｉ−の利用価値は大である。1 Effect of the invention 1 The present invention provides the following 'jA, ? Since it has a F effect, it has great utility value in industry.
（１）本発明によると、■−■化合物の合成条件とその
単結晶の成長条件を、それぞれ独立に設定できるので、
高純度のＩＩＩ−Ｖ化合物の単結晶を、容易に歩留りよ
く得ることができる。(1) According to the present invention, the synthesis conditions for the ■-■ compound and the growth conditions for its single crystal can be set independently.
High purity single crystals of III-V compounds can be easily obtained with good yield.
（２）特に、Ｂの含有量がｌＸｌ０’フｅ１ｍ−３以下
の■−■化合物の単結晶を容易に成長させることができ
る。(2) In particular, it is possible to easily grow a single crystal of a compound (1)-(3) having a B content of 1X10'Fe1m-3 or less.
（３）従って、イオン注入法によって、ＦＥＴ。(3) Therefore, FET can be manufactured by ion implantation.
■Ｃ等の素子を歩留りよく製造することができる。(2) Elements such as C can be manufactured with high yield.
Ｉ−実施例１
本発明を実施例及び比較例に基づいて具体的に説明する
。I-Example 1 The present invention will be specifically described based on Examples and Comparative Examples.
実施例Ｉ
ＬＥＣｖｃ置を用いてＧ ａ Ａ ｓ多結晶を製造した
。Example I A GaAs polycrystal was produced using an LECvc apparatus.
純度９９．９９９９％のＧａ及びＡｓを、それぞれ３，
０００ｋｇ及び３．２２４ｋｇならびに水の含有量が１
０００ｐ陣である三酸化二ほう素１ 、２ ｋｇをＩ３
ＢＮＭのるつぼに仕込み、ＬＥＣ装置内に設置した。Ga and As with a purity of 99.9999% were each
000kg and 3.224kg and water content is 1
1,2 kg of diboron trioxide, which is a 000p group, is I3
It was placed in a BNM crucible and installed in the LEC device.
ＬＥＣ装置内を真空排気した後、窒素を導入して圧力を
１０ｋｇ／ｃ輸２とした。After evacuating the inside of the LEC apparatus, nitrogen was introduced to bring the pressure to 10 kg/c<2>.
抵抗加熱ヒーターによりるつぼを加熱して、Ｇ ａとＡ
ｓを反応させた後、さらに、ＧａＡｓの融点まで加熱し
て反応を完結させた。Heating the crucible with a resistance heater, G a and A
After reacting s, the reaction was further completed by heating to the melting point of GaAs.
反応が終了した後、窒素圧を保持しながら、るつぼを室
温まで徐々に冷却した。After the reaction was completed, the crucible was gradually cooled to room temperature while maintaining nitrogen pressure.
得られた多結晶を一辺約１５＋ａｍのブロックに切断し
た後、その表面を王水でエツチングした。The obtained polycrystal was cut into blocks of about 15+ am on each side, and the surface thereof was etched with aqua regia.
このＧａＡｓ多結晶のＢ含有量は、８１ＭＳ法によって
分析したところ、４ Ｘ １０ ”ｃｍ−” 、また、
比抵抗は、５Ｘ１０’Ω・Ｃ−であった。The B content of this GaAs polycrystal was analyzed by 81MS method and was found to be 4 x 10 "cm-".
The specific resistance was 5×10′Ω·C−.
次に、上記多結晶４．０００ｋｇ及び水の含有量が５０
０ ｌ１ｌ）ＩＩＩである三酸化二ほう素１．０００ｋ
ｇをｔ＋ＢＮＷるつぼに仕込み、ＬＥＣｖｃ置内に設置
した。Next, 4,000 kg of the above polycrystal and a water content of 50
0 l1l) III diboron trioxide 1.000k
g was placed in a t+BNW crucible and placed in the LECvc equipment.
ＬＥＣ装置内を真空排気した後、１０ｋｇ／ｃ１１１２
の窒素圧をかけた。After evacuating the inside of the LEC device, 10kg/c1112
of nitrogen pressure was applied.
続いて、通常のＬＥＣ法によってＧａＡｓ ’ＩＬ結品
を成長させた。Subsequently, a GaAs' IL product was grown using a conventional LEC method.
その結果、重１３．５ｋｇの単結晶が得られた。As a result, a single crystal weighing 13.5 kg was obtained.
８１ＭＳ法によって測定したＬ記単結晶のＢ含ｒｉ ｆ
ｉｔ、は、６ Ｘ １０ ｌ６ｃａｎ−３、比抵抗は、
４．５×１０７Ω”ｅｔａ、また、電子の易動度は、５
．８×１０ ’ｅｔａ２／ Ｖ ・ｓｅｅ、であった。B content of L single crystal measured by 81MS method
it, is 6 X 10 l6can-3, specific resistance is,
4.5×107Ω”eta, and the electron mobility is 5
．． It was 8×10′ eta2/V·see.
実施例２
多結晶の製造の際に用いる三酸化二ほう素の水の含有量
を２０００１１１）１１としたこと以外は、実施例１と
同様にしてＧ ａ Ａ ｓ単結晶をｒ＆長させた。Example 2 A G a As single crystal was made r&long in the same manner as in Example 1, except that the water content of diboron trioxide used in producing the polycrystal was set to 2000111)11.
得られた多結晶のＢ含有量は、１．５Ｘ１０１６ｅｌ１
１−’ 、比抵抗は、３，５Ｘ１０’Ω’ｃｍであった
。The B content of the obtained polycrystal is 1.5X1016el1
1-', and the specific resistance was 3.5 x 10'Ω'cm.
また、得られた単結晶の重量は、３．７ｋｇ５Ｂ含有燵
は、３ Ｘ １０ ”ｃｍ−”、比抵抗は、３Ｘ１０’
Ω” ｃｒｓ、また、電子の易動度は、６．１×１０３
０ｍ２／ Ｖ−ｓｅｅ、であった。The weight of the obtained single crystal is 3.7 kg.
Ω” crs, and the mobility of electrons is 6.1×103
It was 0m2/V-see.
比較例
多結晶の製造の際に用いる三酸化二ほう素として水の含
有量が７００ ｐｐｍのものを用いたこと以外は、実施
例１と同様にしてＧａＡｓ単結晶を成長させた。Comparative Example A GaAs single crystal was grown in the same manner as in Example 1, except that diboron trioxide containing 700 ppm of water was used in the production of polycrystals.
得られた多結晶のＢの含有量は、１．５Ｘ１（１１７ｃ
Ｉ＠−コ、また、比抵抗は、ｌＸｌ０’Ω・０輪であっ
た。The B content of the obtained polycrystal is 1.5X1 (117c
I@-co, and the specific resistance was lXl0'Ω·0 rings.
また、得られた単結晶の重量は、３．２ｋｇ、Ｂの含有
量は、２ 、ＯＸ １０ ”ｃｍ−’、比抵抗は、８Ｘ
１０７Ω”ｃｍ、また、易動度は、５．０Ｘ１（＞３
Ｃ１１１２／■φ９ｅｅ、であった。The weight of the obtained single crystal was 3.2 kg, the content of B was 2, OX 10 "cm-', and the specific resistance was 8X
107Ω”cm, and the mobility is 5.0X1 (>3
C1112/■φ9ee.
以−トの実施例及び比較例から明らかな通り、本発明に
よるとほう素の含有量が少ないＧａＡｓｔｔＬ結晶を収
率よく得ることができる。As is clear from the Examples and Comparative Examples below, according to the present invention, GaAsttL crystals with a low boron content can be obtained in good yield.
特許出願人 三菱モンサント化成株式会社三菱化成工業
株式会社
代 理 人 弁理士 良否用 −
（ばか１名）
手続補正書（自発）
昭和Ａλ年ｇ月２５日
／ 事件の表示
昭和６コ年特許願第ｉｔｔｇｂ６ｇ号
コ 発明の名称
無機化合物単結晶の成長方法
３ 補正をする者
事件との関係 特許出願人
名 称 （６０１Ｉ）三菱モンサント化成株式会社（
ｒ９６）三菱化成工業株式会社
ダ代理人
居 所 東京都千代田区丸の内二丁目Ｓ＠ａ号（ほか
７名）
Ｓ 補正の対象
明細書の発明の詳細な説明の欄
６ 補正の内容
（１ン 明細書第１頁第２０行目、「高周波用」を、
「高周波用」Ｋ訂正する。Patent applicant: Mitsubishi Monsanto Chemical Co., Ltd. Mitsubishi Chemical Industries, Ltd. Agent: Patent attorney For pros and cons - (1 idiot) Procedural amendment (spontaneous) Date: August 25, 1939 / Indication of the case: Patent application No. 1933 ittgb6g Name of the invention Method for growing single crystals of inorganic compounds 3 Relationship to the case of the person making the amendment Name of patent applicant (601I) Mitsubishi Monsanto Chemical Co., Ltd. (
r96) Mitsubishi Chemical Industries, Ltd. Agent Address S@a, 2-chome Marunouchi, Chiyoda-ku, Tokyo (and 7 others) S Column 6 for detailed explanation of the invention in the specification subject to amendment Contents of amendment (1) Details On page 1, line 20 of the book, "for high frequency"
"For high frequency" K Correct.
（２ン 明細書第１Ｏ頁第ａ行目、［Ｂの含有量は、
／、ｓｘ ｌｏ”Ｊを、［ｓ Ｘ ／ ｏ” Ｊ に
訂正する。(2nd Specification, page 10, line a, [The content of B is
/, sx lo”J is corrected to [s X / o”J.
（３）明細書第１０頁第５〜６行目、［Ｂ含有量は、３
×／ ０” ｃｍ−３、Ｊを、「Ｂ含有量は、１ｘｌ
Ｏ１６ｃｒｒＩ−３、」に訂正する。(3) Page 10, lines 5-6 of the specification, [B content is 3
×/ 0” cm-3, J, “B content is 1xl
O16crrI-3,” is corrected.
以 上that's all
Claims (1)
化合物の融液から、液体カプセル引上法により単結晶を
成長させる方法において、上記無機化合物が、第IIIｂ
族元素及び第Ｖｂ族元素の混合物を、水を少なくとも１
０００ｐｐｍ（重量比）含有する三酸化二ほう素の融液
で覆い、かつ、不活性な素材でできたるつぼ中で反応さ
せて合成したものであることを特徴とする方法。In a method for growing a single crystal by a liquid capsule pulling method from a melt of an inorganic compound consisting of Group IIIb elements and Group Vb elements of the periodic table, the inorganic compound is
A mixture of a group element and a group Vb element and at least one portion of water
000 ppm (by weight) of diboron trioxide, and the method is characterized by being synthesized by reacting in a crucible made of an inert material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14866887A JPS63315599A (en) | 1987-06-15 | 1987-06-15 | Method for growing inorganic compound single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14866887A JPS63315599A (en) | 1987-06-15 | 1987-06-15 | Method for growing inorganic compound single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63315599A true JPS63315599A (en) | 1988-12-23 |
Family
ID=15457947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14866887A Pending JPS63315599A (en) | 1987-06-15 | 1987-06-15 | Method for growing inorganic compound single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63315599A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
| EP0580953A1 (en) * | 1992-07-31 | 1994-02-02 | Shin-Etsu Handotai Kabushiki Kaisha | GaP light emitting device and method for fabricating the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63176398A (en) * | 1987-01-19 | 1988-07-20 | Sumitomo Electric Ind Ltd | Method for growing compound semiconductor single crystal |
-
1987
- 1987-06-15 JP JP14866887A patent/JPS63315599A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63176398A (en) * | 1987-01-19 | 1988-07-20 | Sumitomo Electric Ind Ltd | Method for growing compound semiconductor single crystal |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
| EP0580953A1 (en) * | 1992-07-31 | 1994-02-02 | Shin-Etsu Handotai Kabushiki Kaisha | GaP light emitting device and method for fabricating the same |
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