JPS6331504Y2 - - Google Patents

Info

Publication number
JPS6331504Y2
JPS6331504Y2 JP1981188005U JP18800581U JPS6331504Y2 JP S6331504 Y2 JPS6331504 Y2 JP S6331504Y2 JP 1981188005 U JP1981188005 U JP 1981188005U JP 18800581 U JP18800581 U JP 18800581U JP S6331504 Y2 JPS6331504 Y2 JP S6331504Y2
Authority
JP
Japan
Prior art keywords
mold
heater
thin film
sputtering
molding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1981188005U
Other languages
Japanese (ja)
Other versions
JPS5894297U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18800581U priority Critical patent/JPS5894297U/en
Publication of JPS5894297U publication Critical patent/JPS5894297U/en
Application granted granted Critical
Publication of JPS6331504Y2 publication Critical patent/JPS6331504Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Surface Heating Bodies (AREA)
  • Press-Shaping Or Shaping Using Conveyers (AREA)

Description

【考案の詳細な説明】 本考案は成形型に関するもので、型内の成形用
材料を直接加熱できるとともに、温度制御とエネ
ルギー節約に有効な成形型を提供することを目的
とする。
[Detailed Description of the Invention] The present invention relates to a mold, and an object of the present invention is to provide a mold that can directly heat the molding material within the mold and is effective in controlling temperature and saving energy.

従来より、成形型内に投入した成形用合成樹脂
材料またはゴム材料を加熱する構造においては、
ヒータによつて成形型を加熱し、この加熱された
成形型から前記成形用材料に熱を補給するように
なつている。したがつてこのような従来構造によ
れば、成形用材料を直接加熱することができず、
成形型から他部材や大気への熱伝播量も大きく、
すなわちエネルギー損失が大きかつた。その上、
この無駄なエネルギーを遮断吸収する構造を要す
るものであり、温度制御面においても昇降温に遅
れが生じるため精度を上げることが困難であつ
た。
Traditionally, in structures that heat synthetic resin materials or rubber materials for molding put into a mold,
The mold is heated by a heater, and heat is supplied from the heated mold to the molding material. Therefore, according to such a conventional structure, it is not possible to directly heat the molding material,
The amount of heat transferred from the mold to other parts and the atmosphere is also large,
In other words, energy loss was large. On top of that,
A structure is required to cut off and absorb this wasted energy, and in terms of temperature control, it has been difficult to increase accuracy because there is a delay in temperature rise and fall.

本考案は上記問題に鑑み、成形型を絶縁体で製
するとともに、成形用材料と当接する該成形型の
成形面に金属薄膜からなるヒータをスパツタリン
グまたはイオンプレーテイングによつて被着形成
し、該ヒータを通電発熱させる構成としたことに
よつて、高精度な温度制御を低コストおよび省エ
ネルギー化を可能にするものである。
In view of the above-mentioned problems, the present invention includes making a mold from an insulator, and forming a heater made of a thin metal film on the molding surface of the mold that comes into contact with the molding material by sputtering or ion plating, By electrifying the heater and generating heat, it is possible to perform highly accurate temperature control at low cost and save energy.

以下、本考案の一実施例を第2図にしたがつて
説明する。11は成形装置の上型保持枠12に固
着した上型、13は下型保持枠14に固着した下
型であり、合成樹脂材料またはゴム材料を加熱プ
レス成形するものである。上記上型11と下型1
3の両プレス面には薄膜ヒータ15,16がそれ
ぞれ形成され、各薄膜ヒータ15,16はそれぞ
れ導電線17を介して電源18と接続されるもの
で、該導電線17の途中には上記両薄膜ヒータ1
5,16の近傍に温度検知部19,19を設けた
温度制御部20によつて断続駆動または電流制御
駆動される制御駆動回路21が構成される。
An embodiment of the present invention will be described below with reference to FIG. Reference numeral 11 denotes an upper mold fixed to an upper mold holding frame 12 of the molding apparatus, and 13 denotes a lower mold fixed to a lower mold holding frame 14, which are used to heat press mold a synthetic resin material or a rubber material. Above upper mold 11 and lower mold 1
Thin film heaters 15 and 16 are respectively formed on both press surfaces of 3, and each of the thin film heaters 15 and 16 is connected to a power source 18 via a conductive wire 17. Thin film heater 1
A control drive circuit 21 is configured to be driven intermittently or under current control by a temperature control section 20 having temperature detection sections 19 and 19 provided near the temperature detection sections 5 and 16.

上記構成になる成形型は直接成形品に当接する
成形面のみを薄膜ヒータ15,16によつて所定
温度に加熱するものであるから、上型11および
下型13全体の温度を高温に保つ必要がなく、き
わめて経済的であり、また直接薄膜ヒータ15,
16を温度制御すれば良いため構造がきわめて簡
単になるものである。
Since the mold having the above configuration heats only the molding surface that directly contacts the molded product to a predetermined temperature by the thin film heaters 15 and 16, it is necessary to maintain the entire temperature of the upper mold 11 and the lower mold 13 at a high temperature. There is no direct thin film heater 15, which is extremely economical.
16, the structure is extremely simple.

つぎに、本考案の成形型の製作実施例を述べ
る。
Next, an example of manufacturing the mold of the present invention will be described.

(実施例) 高周波スパツタリングで成形型を試作した。
(第3図および第4図参照) 金属薄膜材料:Ti(チタン) 絶縁体:アルミナ磁器 スパツタリング条件 アルゴンガス圧力 0.08Torr 電極間隔 50mm 電力(有効) 300W 〓 〓電圧 2.5KV 電流 200mA 時間 30分 上記条件で第3図に示すように、アルゴンガス
Arを充填し、かつ減圧したスパツタリング室2
2に高周波電極23と基盤ホルダ24を対置せし
め、マツチングボツクス25を介して、該高周波
電極23を高周波電源26と接続するとともに該
高周波電極23に固設したチタンプレート27に
対向するように上記基盤ホルダ24に被覆体であ
るアルミナ磁器の成形型28を設けたものであ
る。なお、この時成形型28の非被覆部は第4図
に示すようにアルミ〓29でマスキングをなし、
チタン膜が付着しないようにした。
(Example) A mold was prototyped using high-frequency sputtering.
(See Figures 3 and 4) Metal thin film material: Ti (titanium) Insulator: Alumina porcelain Sputtering conditions Argon gas pressure 0.08Torr Electrode spacing 50mm Power (effective) 300W Voltage 2.5KV Current 200mA Time 30 minutes Above conditions As shown in Figure 3, argon gas
Sputtering chamber 2 filled with Ar and depressurized
2, a high frequency electrode 23 and a base holder 24 are placed opposite each other, and the high frequency electrode 23 is connected to a high frequency power source 26 via a matching box 25, and the high frequency electrode 23 is connected to the high frequency electrode 23 so as to face the titanium plate 27 fixed to the high frequency electrode 23. A base holder 24 is provided with an alumina porcelain mold 28 serving as a covering. At this time, the uncoated part of the mold 28 is masked with aluminum 29 as shown in FIG.
Prevented titanium film from adhering.

上記スパツタリングで金属の薄膜ヒータ30を
構成した成形型28に対し第5図に示すごとく電
極31,31を接続して交流電圧32をかけて大
気中で加熱した。
As shown in FIG. 5, electrodes 31, 31 were connected to the mold 28 which formed the metal thin film heater 30 by the sputtering process, and an alternating current voltage 32 was applied to the mold 28 to heat it in the atmosphere.

薄膜ヒータ30の平均膜圧 1.1μm 電極31,31間の抵抗 50Ω 温度測定 表面温度計 電圧を100Vまで加えたところ、約200℃まで昇
温するのが確認できた。このとき薄膜ヒータ30
には何の変化も見られなかつた。
Average film thickness of thin film heater 30: 1.1 μm Resistance between electrodes 31, 31: 50Ω Temperature measurement: Surface thermometer When voltage was applied to 100 V, it was confirmed that the temperature rose to approximately 200°C. At this time, the thin film heater 30
No changes were observed.

以上述べたように本考案の成形型は、成形面に
金属薄膜からなるヒータを設けて成形用材料を直
接加熱するようにしたもので、しかも絶縁体製の
成形型がヒータの周囲で保温作用をなすため、エ
ネルギー損失が大幅に低減され、温度制御を高精
度で行うことができるといつた優れた効果を奏
し、また、前記薄膜ヒータはスパツタリングまた
はイオンプレーテイングによつて形成するため、
複雑な形状の成形型への実施も可能である。
As mentioned above, the mold of the present invention has a heater made of a thin metal film on the molding surface to directly heat the molding material, and the mold made of an insulator acts as a heat insulator around the heater. Since the thin film heater is formed by sputtering or ion plating, the thin film heater is formed by sputtering or ion plating.
It is also possible to use molds with complex shapes.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す成形装置要部
正断面図と制御回路のブロツク線図、第2図は成
形型の高周波スパツタリングの状態を示す説明
図、第3図は第2図における成形型の正断面図、
第4図は製品のテスト状況を示す説明図である。 11……上型、12……上型保持枠、13……
下型、14……下型保持枠、15,16,30…
…薄膜ヒータ、17……導電線、18……電源、
19……温度検知部、20……温度制御部、21
……制御駆動回路、22……スパツタリング室、
23……高周波電極、24……基盤ホルダ、25
……マツチングボツクス、26……高周波電源、
27……チタンプレート、28……成形型、29
……アルミ〓、31……電極、32……交流電
源。
Fig. 1 is a front sectional view of the main parts of a molding device and a block diagram of a control circuit showing an embodiment of the present invention, Fig. 2 is an explanatory diagram showing the state of high frequency sputtering of a mold, and Fig. 3 is a diagram of Fig. 2. A front cross-sectional view of the mold in
FIG. 4 is an explanatory diagram showing the product test situation. 11... Upper mold, 12... Upper mold holding frame, 13...
Lower mold, 14... Lower mold holding frame, 15, 16, 30...
... thin film heater, 17 ... conductive wire, 18 ... power supply,
19...Temperature detection section, 20...Temperature control section, 21
...Control drive circuit, 22...Sputtering chamber,
23...High frequency electrode, 24...Base holder, 25
...Matching box, 26...High frequency power supply,
27... Titanium plate, 28... Molding mold, 29
...Aluminum〓, 31... Electrode, 32... AC power supply.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 成形型を絶縁体で製するとともに、成形用材料
と当接する該成形型の成形面に金属薄膜からなる
ヒータをスパツタリングまたはイオンプレーテイ
ングによつて被着形成し、該ヒータに導電してな
ることを特徴とする成形型。
A mold is made of an insulator, and a heater made of a thin metal film is deposited on the molding surface of the mold that comes into contact with the molding material by sputtering or ion plating, and the heater is electrically conductive. A mold featuring:
JP18800581U 1981-12-18 1981-12-18 mold Granted JPS5894297U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18800581U JPS5894297U (en) 1981-12-18 1981-12-18 mold

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18800581U JPS5894297U (en) 1981-12-18 1981-12-18 mold

Publications (2)

Publication Number Publication Date
JPS5894297U JPS5894297U (en) 1983-06-25
JPS6331504Y2 true JPS6331504Y2 (en) 1988-08-23

Family

ID=30102858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18800581U Granted JPS5894297U (en) 1981-12-18 1981-12-18 mold

Country Status (1)

Country Link
JP (1) JPS5894297U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50150940A (en) * 1974-05-24 1975-12-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50150940A (en) * 1974-05-24 1975-12-04

Also Published As

Publication number Publication date
JPS5894297U (en) 1983-06-25

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