JPS63311727A - Plasma processor - Google Patents

Abstract

PURPOSE:To enable a large space processing to be performed evenly within a short time by a method wherein a high-frequency electrode is arranged outside a vacuum vessel along a surface by the insulators of the first vacuum vessel with a surface formed of insulators. CONSTITUTION:A vacuum vessel 30 in a discharge chamber is composed of a cylindrical tube made of insulators such as quartz, glass ceramics etc. Capacity coupling type high-frequency glow discharge electrodes 31-a and 31-b are provided outside the vacuum vessel 30 along the surface of the vessel 30 further an electromagnet 34 is arranged outside said electrodes 31-a and 31-b. Furthermore, a substrate base 43 to be loaded with a specimen 44 for doping or plasma processing with an impurity is provided in the second vacuum vessel. Through these procedures, the vacuum vessel 30 with a surface formed of insulators is used as a discharge chamber to make the high-frequency and the magnatostatic field overlap each other so that uniform plasma may be stably produced at relatively low pressure.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a plasma processing apparatus used for manufacturing semiconductor elements in the semiconductor industry, and in particular, for impurity implantation into large area semiconductor elements, semiconductor thin films, etc. The present invention relates to a plasma processing apparatus that uniformly performs processes such as semiconductor thin film formation and etching in a short time.

Conventional Techniques Methods for doping semiconductor thin films, etc. by injecting impurities in the form of ions to a desired amount and depth, or methods for forming or etching a thin film include: (1): Direct current glow discharge is used as an ion source. A simple ion implantation bag M [FIG. 6, j.

C. Muller, et al.: Proc.
European Photovoltaic 5o
lar Energy Conf, (Proceeding European Photoportic Solar Energy Conference) (Lexenberg)
5ept, 1977, p897-909] [Fig. 6], and (2): a method using a plasma CVD apparatus in which a capacitively coupled high-frequency electrode is provided in a vacuum chamber and a chemical vapor phase reaction is caused by high-frequency glow discharge. A method in which a DC voltage is further applied in a superimposed manner to a high-frequency electrode [Fig.
Figure 8 1 etc. In Figures 5, 6 and 7, 1 is a discharge chamber, 2 is an anode electrode for DC glow discharge, 3 is a DC power source for discharge, 4 is an electrode for acceleration, 5 is a DC power source for acceleration, 6 is a gas introduction tube, 7 8 is an insulator, 8 is a gas exhaust pipe, 9 is a substrate stand, 10 is a vacuum chamber, 11 is a high frequency electrode, 12 is a matching box,] 83 is a high frequency oscillator, 14 is an M current power supply, 1
5 is a gas introduction pipe, 16 is a gas discharge pipe, 17 is a sample, 20
is an insulating cylindrical tube', 21 is a high frequency electrode, 22 is an electromagnet,
23 is a gas introduction pipe, 24 is an insulated 7-lunge, 25-a, 2
5-b is a DC electrode, 26 is a substrate chamber, 27 is a substrate stand, 28
29 is a sample, and 29 is a gas exhaust pipe.

Problems to be Solved by the Invention In the conventional technique of injecting impurities in the form of ions into a semiconductor thin film or the like and performing toving, as shown in (1) above, a DC glow discharge is used as the ion source and the mass separation unit is The simple ion implantation device shown in Fig. 6, which implants impurity ions into a semiconductor substrate, etc. through an ion accelerating section, has a pressure (1 to 0, 0 I Torr) that maintains DC glow discharge and functions as an ion source. Keep the ion source pressure at
Furthermore, the pressure at which the mean free path of ions is greater than the distance from the ion source to the substrate (~10-3 Torr or less) requires the use of complex mechanisms such as differential pumping to maintain the substrate chamber, and impurity injection In order to increase the area of the discharge electrode, the discharge electrode is made thicker (this causes non-uniformity and instability of the discharge due to creeping discharge, etc., making it difficult to do uniform and high-precision doping, and furthermore, the discharge electrode is directly exposed to ions. Therefore, during high-frequency discharge, a self-bias occurs in the discharge electrode, and the discharge electrode is sputtered by ions accelerated by this bias voltage, resulting in problems such as contamination of the sample with impurities such as the electrode material.On the other hand, as mentioned above, (2) A method in which a capacitively coupled high-frequency electrode is installed in a vacuum chamber and a DC voltage is applied to the high-frequency electrode of a plasma CVD apparatus that causes a chemical vapor phase reaction by high-frequency glow discharge, is that the pressure in the substrate chamber is lower than the DC glow discharge. The pressure of the vacuum chamber is 1 to 0.0 I to maintain
It is maintained at Torr and the voltage that can be applied is 10
Because the voltage is as low as 0 to 1000 V, neutral particles other than desired ions are deposited on the sample surface, making it difficult to do highly accurate impurity doping with a defined impurity concentration. Furthermore, due to the instability of the discharge due to the coincidence of the discharge electrode and the accelerating electrode, it is difficult to uniformly dope impurities or perform plasma treatment on a large area sample, and the discharge electrode is directly exposed to ions. Since the discharge electrode is sputtered by ions accelerated by the self-bias, there is a problem that the sample is contaminated by impurities such as the electrode material generated by sputtering of the discharge electrode. Also above (
In the method described in 3), which uses a plasma processing apparatus using a discharge chamber in which a high-frequency electrode and a magnetic field generator are provided outside an insulating cylindrical tube, high-frequency power leaks to the outside, and the In this case, current induced by the leaked radio frequency flows to the electromagnet, and if the radio frequency power is increased to promote plasma processing, the applied magnetic field becomes unstable and the discharge becomes unstable and non-uniform, making it difficult to treat large areas. There was a problem in that it was difficult to perform the process uniformly in a short period of time.

Means for Solving the Problems In order to solve the above problems, the plasma processing apparatus according to the present invention includes a first vacuum chamber having a surface formed of an insulating material, and an insulator of the first vacuum chamber. Consisting of a high-frequency electrode provided outside the vacuum chamber along a surface formed of an object, a conductor maintained at a ground potential and provided outside the high-frequency electrode, and an electromagnet provided outside the conductor. The substrate chamber includes a discharge chamber in which a discharge chamber is placed, a second vacuum chamber, and a substrate stand provided inside the second vacuum chamber.

That is, the present invention provides a first structure having a surface made of an insulating material.
A high-frequency electrode is arranged outside the vacuum chamber along the surface formed of an insulator of the vacuum chamber, an electromagnet is further arranged outside the high-frequency electrode, and a ground potential is set between the high-frequency electrode and the electromagnet. A device equipped with a conductor is used as an ion source,
A substrate stage on which a sample to be doped with impurities or subjected to plasma treatment is placed is provided in the second vacuum chamber.

By configuring the vacuum chamber that generates the working plasma to have a surface made of an insulator, it is possible to provide an electrode for high-frequency glow discharge outside the vacuum chamber along the surface formed of the insulator. Become. In addition, by providing a high-frequency electrode outside the vacuum chamber that constitutes the discharge chamber, ions accelerated by self-bias will not sputter the high-frequency electrode (this will have an adverse effect on the characteristics of the semiconductor being doped or plasma-treated). Furthermore, by arranging an electromagnet, the magnetic field applied inside the discharge chamber confines the electrons and excites their swirling motion, making effective use of the power supplied by the high-frequency electrode to generate a discharge. By providing a ground potential conductor between the high frequency electrode and the electromagnet, high frequency power is prevented from leaking to the outside, and current induced by the high frequency does not flow into the electromagnet, so the applied magnetic field is becomes stable, and even if the high-frequency power is increased, the discharge becomes extremely stable and uniform.

For example, 10-3 to 10
Stable and uniform discharge is maintained even under gas pressure of -'Torr. The mean free path of ions under this gas pressure of 10-3 to 10-' Torr varies depending on the ion species and energy, but the distance from the discharge chamber to the substrate stand (approximately 10
cIM), the charged particles can be pushed out and accelerated with a simple structure of a first conductive bias section and a second conductive bias section provided in the discharge chamber. , charged particles can be transported to a sample such as a semiconductor on a substrate table and irradiated onto the sample. Because the pressure inside the device can be kept below 10-3 to 10-'Torr and because the high-frequency electrode for discharge and the conductive bias section electrode for acceleration are separated, high pressure and high DC voltage can be avoided. To accelerate charged particles to 1000 eV or more without causing abnormal discharge such as creeping discharge or avalanche discharge. In addition, the pressure inside the device is 10-3 to 10-'T.
What can be done under orrJJ is that neutral particles other than desired ions are not deposited on the sample surface (high-precision impurity doping or plasma treatment with a defined impurity concentration is performed).

Example The present invention will be explained in more detail below based on the drawings.

FIG. 1 is a schematic configuration diagram of a first embodiment of a plasma processing apparatus according to the present invention, and FIG. 2 is a sectional view of a discharge chamber A in the first embodiment of the plasma processing apparatus according to the present invention. . The vacuum chamber 30 of the discharge chamber A is composed of a cylindrical tube made of an insulator such as quartz, glass, or ceramics. The capacitively coupled high frequency glow discharge electrodes 31-a and 31-b are made of a highly conductive metal such as copper or nickel, and are provided outside the vacuum chamber 30 along the surface of the vacuum chamber 30 (see FIG. 2). ).

The capacitively coupled high frequency glow discharge electrode 31-a is connected to the high frequency generator 33 via the matching box 32, and the capacitively coupled high frequency glow discharge electrode 31-b is grounded to supply high frequency power within the vacuum chamber 30. supply. Furthermore, the magnetic field applied by the electromagnet 34 placed outside the capacitively coupled high-frequency glow discharge electrodes 31-a and 31-b excites the swirling motion (electron cyclotron motion) of the electrons and confines the electrons. Plasma is stably generated in the vacuum chamber 30 at a relatively low pressure of 10-3 to 10-' Torr by effectively using high-frequency power. The strength of this magnetic field within the vacuum chamber 30 may be about 20 to 200 Gauss. A conductor wall 35 made of stainless steel, aluminum, copper, etc. is sandwiched between the high frequency electrodes 31-a and 31-b and the electromagnet 34, and in this embodiment, the conductor wall 35 and the insulating flanges 36-a and 36-b A tank is formed that covers the vacuum tank 30 and the high frequency electrodes 31-a and 31-b. The conductor mesh 37-a, which is made of conductive molybdenum, stainless steel, aluminum, titanium, tantalum, etc., and serves as the first conductive bias section electrode, is an insulating mesh made of ceramics, Teflon, acrylic, vinyl chloride, quartz, etc. is provided in the opening 38 of the flexible flange 36-a. The second one is made of conductive stainless steel, aluminum, titanium, tantalum, etc.
A conductor plate 37-a, which serves as a conductive bias section electrode, is provided in a position facing the conductor mesh 37-a in the vacuum chamber 30, with the plasma 39 generated by discharge interposed therebetween. Conductor plate 37-
b is ceramics, Teflon, acrylic, vinyl chloride,
It is attached to the vacuum chamber 30 via an insulating flange 36-b made of quartz or the like. The conductor mesh 37-a and the conductor plate electrode 37-b are connected to a DC high voltage power supply 40,
By applying a desired voltage, charged particles in the discharge chamber A are pushed out to the substrate chamber B and accelerated.

The material gas is introduced into the discharge chamber A through a gas introduction pipe 41. The substrate chamber B is connected to a gas discharge pipe 42,
The pressure is maintained between -3 and 10 Torr. A substrate stand 43 made of conductive stainless steel, aluminum, copper, etc. is provided in the substrate chamber B, and a sample 44 such as a semiconductor substrate is placed on the substrate stand 43 (the sample 44 is heated by a heater 45 to remove impurities). The conductor mesh 37-a and the substrate pedestal 43 have a uniform charged particle density with respect to the opening 38, which is extracted from the plasma uniformly generated within the vacuum chamber 3°. The charged particle beam 46 has a kinetic energy corresponding to the potential difference between the substrate stage 4
The sample 44 on the sample 3 is irradiated, and the sample 44 is doped with a desired amount of impurities or subjected to plasma treatment.

FIG. 3 is a schematic configuration diagram of a second embodiment of the plasma processing apparatus according to the present invention, and FIG. 4 is a sectional view of the discharge chamber C in the second embodiment of the plasma processing apparatus according to the present invention. . The vacuum chamber 5° of the discharge chamber C is composed of a cylindrical tube made of an insulator such as quartz, glass, or ceramics. The capacitively coupled high frequency glow discharge electrodes 51-a and 51-b are made of a highly conductive metal such as copper or nickel, and are provided along the surface of the vacuum chamber 50 outside the vacuum chamber 50. The capacitively coupled high frequency glow discharge electrode 51-a is connected to the high frequency oscillator 53 via the matching box 52, and the capacitively coupled high frequency glow discharge electrode 51-b is grounded to supply high frequency power into the vacuum chamber 50. I do. Further, an electromagnet 5 disposed outside the capacitively coupled high frequency glow discharge electrodes 51-a and 51-b.
10-3 to 10 by effectively using high-frequency power by exciting the swirling motion of electrons (electron cyclotron motion) and confining the electrons by the magnetic field applied by 4.
Plasma is stably generated in the vacuum chamber 50 at a relatively low pressure of -'Torr. The strength of this magnetic field within the vacuum chamber 50 may be about 20 to 200 Gauss. High frequency electrode 51
-a and 51-b are covered with an insulator 55 such as Teflon,
It is provided insulated from a mesh 56 made of conductive copper, aluminum, stainless steel, etc., which is in contact with the outside (see FIG. 4). This conductor mesh 56 is grounded and shields high frequency power. The conductor mesh 57-a, which is made of conductive molybdenum, stainless steel, aluminum, titanium, tantalum, etc., and serves as the first conductive bias section electrode, is an insulating material made of ceramic Steflon, acrylic, vinyl chloride, quartz, etc. is provided in the opening 59 of the flexible flange 58. A conductor plate 5 that serves as a second conductive bias section electrode made of conductive stainless steel, aluminum, titanium-tantalum, etc.
7-b is provided in the vacuum chamber 50 at a position facing the conductor mesh 57-a with the plasma 60 generated by the discharge in between. The conductor plate 57-b is fixed to the vacuum chamber 50 by an insulating rod 61 made of ceramics, Teflon, quartz, or the like. First conductive bias section electrode 57-a and conductor plate 57
-b is connected to a DC high voltage power supply 62, and by applying a desired voltage, charged particles in the discharge chamber A are pushed out to the substrate chamber B and accelerated. Introducing the material gas into the discharge chamber C is as follows:
This is done through the gas introduction pipe 63. The substrate chamber is equipped with a gas exhaust pipe 6.
4 and maintained at a pressure of 10-3 to 10-6 Torr. A substrate table 65 made of conductive stainless steel, aluminum, copper, etc. is provided in the substrate chamber B, and a sample 56 such as a semiconductor substrate is placed on the substrate table 65. The sample 66 is heated by a heater 67 to increase the efficiency of impurity doping or plasma treatment. A first electrically conductive bias section electrode 57 with a uniform charged particle density with respect to the opening 59 drawn from a plasma 60 uniformly generated in the vacuum chamber 50
A charged particle beam 68 having kinetic energy corresponding to the potential difference between -a and the substrate table 65 is directed to the sample 66 on the substrate table 65.
The sample 56 is doped with a desired amount of impurities or subjected to plasma treatment.

FIG. 5 shows the plasma of nitrogen gas (N2) generated in the discharge chamber C in the second embodiment of the plasma processing apparatus according to the present invention, measured by plasma emission spectroscopy.
>: Emission intensity at wavelength 392r+m [R, W, B,
Pearse and A, G, Gaydon:
The 1dentification of Mo
1 ecular 5 pectra, (Chapman
and Hall, London, 1984)
p227]. The emission intensity in the case without the conductor mesh 56 (1) and in the case with the conductor mesh 56 (■)' was measured by setting the same high frequency power (100 W input) and magnetic field strength (30 Gauss). The measurement was performed from above the vacuum chamber 50 so that the five points A, B, C, D, and E shown in FIG. 4 were visible. In addition, when measuring, conductor plate 57
-b is removed. Case without conductor mesh 56 (1)
The emission intensity varied widely, and the discharge was unstable. On the other hand, when there is a conductor mesh 56 (II)
The inventors have found that the variation in emission intensity is reduced and the discharge is stable. This is because the high frequency is shielded by the conductor mesh 56 at ground potential, and the current induced by the high frequency no longer flows to the electromagnet.The magnetic field within the discharge chamber C does not fluctuate, and stable and uniform plasma is generated. It shows that As described above, providing a ground potential conductor between the high frequency electrode and the electromagnet has a great effect on generating stable and uniform plasma and performing uniform plasma processing using the plasma processing apparatus according to the present invention. bring.

Effects of the Invention The present invention uses a vacuum chamber having a surface made of an insulating material as a discharge chamber, and superimposes a high frequency wave and a static magnetic field to generate a single discharge at a relatively low pressure of 10-3 to 10-'Torr. This makes it possible to stably generate various types of plasma. Furthermore, by providing the high-frequency electrode outside the vacuum chamber along the insulating surface of the vacuum chamber, ions accelerated by self-bias will not sputter the high-frequency electrode. It is possible to prevent contamination by impurity ions and particles that adversely affect the characteristics of semiconductors subjected to plasma processing, and it is possible to perform extremely high-purity impurity doping or plasma processing.In addition, the pressure inside the apparatus can be reduced to 1O''3. Since it can be lowered to ~10-' Torr and the high-frequency electrode for discharge and the conductive bias part electrode for acceleration can be separated, creeping discharge and avalanche discharge due to high pressure or high DC voltage can be avoided. 100 without causing abnormal discharge of
It becomes possible to accelerate charged particles to 0 eV or more and perform impurity doping or plasma treatment. Since the pressure inside the device is less than 10-3 to 10-'Torr, neutral particles other than desired ions are not deposited on the sample surface (high-precision impurity concentration that specifies the impurity concentration) is prevented. It becomes possible to perform doping or plasma processing.In addition, when configuring a large-scale plasma processing apparatus and using it for manufacturing large-area devices, it is possible to provide a ground potential conductor between the high-frequency electrode and the electromagnet. This allows the current induced by high frequency to flow through an electromagnet such as an electromagnet. It is possible to form highly excited plasma and perform uniform processing in a short processing time.The above effects are achieved by sandwiching an insulator between the high frequency electrode and the conductor, A sealed container covering the first vacuum chamber is provided, and an opening is provided between the substrate chamber and the discharge chamber, electrically insulated from the substrate chamber and the discharge chamber, and connected to the first DC power source. a first conductive bias section having a first conductive bias section connected to a first DC power source or a second DC power source and sandwiching plasma generated by discharge at a position facing the first conductive bias section; A second conductive bias section is provided in the discharge chamber and is provided electrically insulated from the substrate chamber and the discharge chamber, and a conductive mesh or a conductive mesh is provided at the opening of the first conductive bias section. providing a conductive porous plate; providing a surface coating on the side of the first conductive bias section and the second conductive bias section exposed to charged particles generated by discharge; and applying a DC voltage to the substrate pedestal. The substrate table is movable, a heating source for heating the substrate table is provided, a gas introduction tube is connected to the discharge chamber, a gas introduction tube is connected to the substrate chamber, and a gas discharge tube is provided. connecting the substrate chamber to the discharge chamber, connecting a gas exhaust pipe to the substrate chamber, connecting the substrate chamber to another vacuum chamber or another plasma processing apparatus via a gate valve, and connecting the substrate stage to the substrate chamber. The same effect can be obtained even if the plasma processing apparatus according to the present invention is transported between the above-mentioned other vacuum chamber or other plasma processing apparatus. It is extremely useful in that it allows doping of high-purity impurities or plasma processing to be performed with high precision and uniformity (all at once in a short time) in the manufacture of large-scale semiconductor devices such as arrays. .

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram of a first embodiment of a plasma processing apparatus according to the present invention, FIG. 2 is a sectional view of a discharge chamber A, and FIG. 3 is a schematic diagram of a second embodiment of a plasma processing apparatus row according to the present invention. A schematic configuration diagram, FIG. 4 is a sectional view of the discharge chamber C, and FIG. 5 is a diagram showing the plasma generated in the discharge chamber C in the second embodiment of the plasma processing apparatus n according to the present invention, measured by plasma emission spectroscopy. Figure 6 shows a schematic diagram of a simple ion implantation device using direct current glow discharge as an ion source, which does not have a mass separation section and injects ions into a semiconductor substrate, etc. through an ion acceleration section. The configuration diagram, FIG. 7, shows a conventional technique in which a DC voltage is further superimposed and applied to the high frequency electrode of a plasma CVD apparatus in which a capacitively coupled high frequency electrode is provided in a vacuum chamber and a chemical vapor phase reaction is caused by high frequency glow discharge. FIG. 8 is a schematic diagram of a method using a plasma processing apparatus provided with a discharge chamber including a high-frequency electrode and a magnetic field generating section outside an insulating cylindrical tube. A...discharge chamber, B...substrate chamber, 30...vacuum chamber,
31-a... Capacitively coupled high frequency glow discharge electrode, 3
1-b... Capacitively coupled high frequency glow discharge electrode, 32
...Matching box, 33...High frequency oscillator,
34... Electromagnet, 35... Conductor wall, 36-a...
Insulating flange, 36-b... Insulating flange, 37-a
...Conductor mesh, 37-b...Conductor plate, 38...
・Opening portion, 39... Plasma, 40... DC high voltage power supply, 41... Gas introduction pipe, 42... Gas discharge pipe, 4
3... Substrate stand, 44... Sample, 45... Heater, 46... Charged particle beam, C... Discharge chamber, D...
- Substrate chamber, 50... Vacuum chamber, 51-a... Electrode for capacitively coupled high frequency glow discharge, 51-b... Electrode for capacitively coupled high frequency glow discharge, 52... Matching box, 53 ...High frequency oscillator, 54...Electromagnet, 55
... Insulator, 56... Conductive mesh, 57-a.
...Conductor mesh...57-b...Conductor plate, 58.
... Insulating flange, 59... Opening, 60... Plasma, 61... DC high voltage power supply, 62... Insulating rod, 6
3... Gas introduction pipe, 64... Gas discharge pipe, 65...
・Substrate stand 0.66...sample, 67...heater, 6
8... Name of charged particle beam agent Patent attorney Toshio Nakao Idiot No. 111
D Figure 2 Figure 4 Row 5 Figure 2 l o 0 0 0 o
(U) 楥二ii'j ; 田二 1 ÷, Figure 6 Figure 7 〒 Figure 8

Claims (15)

[Claims] (1) a first vacuum chamber having a surface formed of an insulator;
a high-frequency electrode provided outside the vacuum chamber along a surface formed of an insulator of the first vacuum chamber; a conductor maintained at a ground potential and provided outside the high-frequency electrode; 1. A plasma processing apparatus comprising: a discharge chamber made up of an electromagnet provided externally; a substrate chamber made up of a second vacuum chamber and a substrate stand provided inside the second vacuum chamber. (2) The plasma processing apparatus according to claim 1, characterized in that an insulator is sandwiched between the high-frequency electrode and the conductor. (3) The plasma processing apparatus according to claim 1 or 2, characterized in that an airtight container covering the first vacuum chamber is provided outside the electromagnet. (4) A first conductive bias section having an opening provided between the substrate chamber and the discharge chamber and electrically insulated from the substrate chamber and the discharge chamber and connected to a first DC power supply. A plasma processing apparatus according to any one of claims 1 to 3, characterized in that: (5) Connected to the first DC power source or the second DC power source, and electrically insulated from the substrate chamber and the discharge chamber with the plasma generated by the discharge in between, at a position facing the first conductive bias section. 5. The plasma processing apparatus according to claim 1, further comprising a second conductive bias section provided in the discharge chamber. (6) The plasma processing apparatus according to any one of claims 1 to 5, characterized in that a conductive mesh or a conductive porous plate is provided in the opening of the first conductive bias section. . (7) A surface coating is provided on the side of the first conductive bias section and the second conductive bias section exposed to charged particles generated by discharge. The plasma processing apparatus according to any one of paragraphs. (8) The plasma processing apparatus according to any one of claims 1 to 7, characterized in that a DC voltage is applied to the substrate stage. (9) The plasma processing apparatus according to any one of claims 1 to 8, characterized in that the substrate table is movable. (10) The plasma processing apparatus according to any one of claims 1 to 9, further comprising a heating source that heats a substrate stage. (11) The plasma processing apparatus according to any one of claims 1 to 10, characterized in that a gas introduction tube is connected to the discharge chamber. (12) The plasma processing apparatus according to any one of claims 1 to 11, wherein a gas introduction pipe is connected to the substrate chamber. (13) The plasma processing apparatus according to any one of claims 1 to 12, wherein a gas exhaust pipe is connected to the discharge chamber. (14) The plasma processing apparatus according to any one of claims 1 to 13, wherein a gas exhaust pipe is connected to the substrate chamber. (15) Connect the substrate chamber to another vacuum chamber or other plasma processing apparatus via a gate valve, and transport the substrate table between the substrate chamber and the other vacuum chamber or other plasma processing apparatus. Claims 1 to 1, characterized in that
4. The plasma processing apparatus according to any one of Item 4.