JPS6331116A - Production stepper - Google Patents
Production stepperInfo
- Publication number
- JPS6331116A JPS6331116A JP61175012A JP17501286A JPS6331116A JP S6331116 A JPS6331116 A JP S6331116A JP 61175012 A JP61175012 A JP 61175012A JP 17501286 A JP17501286 A JP 17501286A JP S6331116 A JPS6331116 A JP S6331116A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- exposure
- film thickness
- thickness
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- 238000005286 illumination Methods 0.000 claims abstract description 4
- 238000005259 measurement Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Control Of Exposure In Printing And Copying (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程の中でフォトリングラフ
ィ工程の白露光技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to white exposure technology in a photolithography process in the manufacturing process of semiconductor devices.
従来フォ） ＩＪソゲラフイエ程での素子寸法の管理と
しては試行的に露光、現象して素子寸法を測定しその結
果全露光量等に反映させるという方法であった。Conventionally, the device dimensions in the IJ Sogerahuie process were managed by performing trial exposure and development, measuring the device dimensions, and reflecting the results in the total exposure amount, etc.
上述した従来の方法では常にフィードパ、りをかける事
が必要な上にその結果が出るまで待つという時間的な損
失が大きかった。また素子寸法の要求規格が厳しくなっ
て来ている中でそのコントロールには最大の注意を払う
べきである。ところが素子寸法を決める要因としてはフ
ォトレジスト膜厚およびその感度、露光量、現像条件等
があるが中でもフォトレジスト膜厚に関しては数百オン
グストロームの膜厚の変化で素子寸法は０．３μｍ程度
（設計寸法１．５μｍの場合）と非常に大きなばらつき
を示すがこれに対しては現状では試行的に露光、現像を
行い素子寸法を測定してフィードバックをかけるという
方法しかない。In the conventional method described above, it is necessary to constantly apply a feed parameter, and there is a large time loss due to waiting until the result is obtained. Furthermore, as requirements for element dimensions are becoming stricter, maximum attention should be paid to their control. However, the factors that determine the element dimensions include the photoresist film thickness, its sensitivity, exposure amount, development conditions, etc. Among them, with regard to the photoresist film thickness, a change in film thickness of several hundred angstroms causes the element dimension to change by about 0.3 μm (design In the case of a size of 1.5 μm), there is a very large variation, but the only way to deal with this at present is to carry out trial exposure and development, measure the element dimensions, and provide feedback.
そこで本発明による露光装置は前述したミクロなフォト
レジスト膜厚ばらつきに対してとの影響を素子寸法ばら
つきに与えない様にする為、フォトレジスト膜厚測定装
置を内蔵させる事により露光する領域の２オドレジスト
膜厚を測定しこの結果を露光量に反映させる事を特徴と
している。Therefore, in order to prevent the above-mentioned microscopic photoresist film thickness variations from affecting element dimension variations, the exposure apparatus according to the present invention incorporates a photoresist film thickness measuring device, so that two parts of the area to be exposed are The feature is that the thickness of the odoresist film is measured and the result is reflected in the exposure amount.
すなわち上述した従来の素子寸法管理方法に対して本発
明はフォトレジスト膜厚と素子寸法および露光量と素子
寸法の関係が明らかになっているので露光装置内に２オ
ドレジスト膜厚測定装置を内蔵させ露光領域での２オド
レジスト膜厚を測定しこれに対して上述の関係を使って
最適露光量を決定し露光する事によシ素子寸法のばらつ
きを低減しかつ安定化し得るという独創的内容を有する
。In other words, in contrast to the above-mentioned conventional element dimension management method, the present invention clarifies the relationship between photoresist film thickness and element dimensions, and between exposure dose and element dimension, so a two-dimensional resist film thickness measuring device is built into the exposure apparatus. It has an original content in that it is possible to reduce and stabilize variations in element dimensions by measuring the 2-odresist film thickness in the exposed area and determining the optimum exposure dose using the above-mentioned relationship for exposure. .
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第一実施例を示す図である。FIG. 1 is a diagram showing a first embodiment of the present invention.
これは縮少投影装置（以下ステッパーと呼ぶ）に２オド
レジスト膜厚測定装置を付加したものでありレーザ発振
器１から出た偏向レーザー波はウェハー上を反射し受光
部に達する。この時偏向角度を変える事によシ受光強度
が変化しこれにより膜厚測定が可能となる。次に測定さ
れたフォトレジスト膜厚に対して必要とする素子寸法と
露光量の関係は第３図より決定されこの結果をステッパ
ーの照明コントローラー４に送り最適露光を行う。This is a reduction projection device (hereinafter referred to as a stepper) with a 2-odresist film thickness measuring device added, and the polarized laser wave emitted from the laser oscillator 1 is reflected on the wafer and reaches the light receiving section. At this time, by changing the deflection angle, the intensity of the received light changes, thereby making it possible to measure the film thickness. Next, the relationship between the element dimensions and exposure amount required for the measured photoresist film thickness is determined from FIG. 3, and this result is sent to the illumination controller 4 of the stepper for optimal exposure.
例えばウェハー上の２点でのフォトレジスト膜厚が３０
ＯＡの差がある場合にはこの２点での露光量を１０％程
度変えると素子寸法が同一となる。For example, the photoresist film thickness at two points on the wafer is 30
If there is a difference in OA, the device dimensions can be made the same by changing the exposure amount at these two points by about 10%.
第２図は本発明の第２の実施例を示す図である。FIG. 2 is a diagram showing a second embodiment of the present invention.
これは第１の実施例がステッパーでの露光ショット毎に
フォトレジスト膜厚測定を行うものであるが第２の実施
例は露光前の待機中のクエハーのフォトレジスト膜厚を
測定するものである。したがって膜厚測定はウェハー内
の数点について行いこΩ平均値を求めてこれに対して第
１の実施例と同様の方法で最適露光量を求めるものであ
りウェハー内で露光量は一定である。この方法はフォト
レジスト膜厚のばらつきが主にウェハー間で発生してい
る場合に有効となシ得る。この場合においてウェハー間
でレジスト膜厚が３０ＯＡ程度の差がある場合′Ｐ、５
？、 ｔとして１０％変化させれば同一の素子寸法が得
られる。This is because the first embodiment measures the photoresist film thickness for each exposure shot with a stepper, but the second embodiment measures the photoresist film thickness of the quefer during standby before exposure. . Therefore, the film thickness is measured at several points within the wafer, the average value of Ω is determined, and the optimum exposure amount is determined using the same method as in the first embodiment, and the exposure amount is constant within the wafer. . This method can be effective when variations in photoresist film thickness mainly occur between wafers. In this case, if there is a difference in resist film thickness of about 30 OA between wafers, 'P, 5
? , t can be changed by 10% to obtain the same element dimensions.
以上説明したように本発明は縮少投影露光装置において
フォトレジスト膜厚測定装置を内蔵させ露光しようとす
るウェハー上の７オトレジスト膜厚を測定しその結果を
露光量に反映させる事により形成する素子寸法のばらつ
き低減と精度向上について大きな効果がある。As explained above, the present invention incorporates a photoresist film thickness measuring device in a reduction projection exposure apparatus, measures the thickness of the photoresist film on a wafer to be exposed, and reflects the result in the exposure amount. This has great effects in reducing dimensional variations and improving accuracy.
第１図は本発明の第１の実施例の概略図、第２図は本発
明の第２の実施例の概略図第３図はフォトレジスト膜厚
をパラメータにしたときの露光量と素子寸法の関係を示
す図である。
１、レーザ、２．受光部、３．膜厚測定用コントローラ
ー、４．照明コントローラー、５．照明光学系、６゜コ
ンデンサレンズ、７．レチクル’ ” Ｂ 少ｂｌｆｔ
ｅレンズ、９．クエハー、１０．ステージ、１１．膜厚
測定部、１２、搬送系
寮１図Fig. 1 is a schematic diagram of the first embodiment of the present invention, Fig. 2 is a schematic diagram of the second embodiment of the present invention, and Fig. 3 is the exposure amount and element dimensions when the photoresist film thickness is used as a parameter. FIG. 1. Laser, 2. light receiving section, 3. Controller for film thickness measurement, 4. Lighting controller, 5. Illumination optical system, 6° condenser lens, 7. Reticle' ” B small blft
e-lens, 9. Quahar, 10. Stage, 11. Film thickness measurement department, 12, transportation system dormitory 1 diagram
Claims (1)
よびそのコントローラと、フォトレジスト膜厚測定結果
から露光量をコントロールする照明コントローラーとを
備えた縮少投影露光装置。A reduction projection exposure apparatus includes a photoresist film thickness measuring device, its controller, and an illumination controller that controls the exposure amount based on the photoresist film thickness measurement results.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61175012A JPS6331116A (en) | 1986-07-24 | 1986-07-24 | Production stepper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61175012A JPS6331116A (en) | 1986-07-24 | 1986-07-24 | Production stepper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6331116A true JPS6331116A (en) | 1988-02-09 |
Family
ID=15988671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61175012A Pending JPS6331116A (en) | 1986-07-24 | 1986-07-24 | Production stepper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6331116A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5409538A (en) * | 1990-04-13 | 1995-04-25 | Hitachi, Ltd. | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
-
1986
- 1986-07-24 JP JP61175012A patent/JPS6331116A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5409538A (en) * | 1990-04-13 | 1995-04-25 | Hitachi, Ltd. | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
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