JPS63304649A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63304649A JPS63304649A JP62140524A JP14052487A JPS63304649A JP S63304649 A JPS63304649 A JP S63304649A JP 62140524 A JP62140524 A JP 62140524A JP 14052487 A JP14052487 A JP 14052487A JP S63304649 A JPS63304649 A JP S63304649A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photosensitive liquid
- semiconductor element
- moisture
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000003860 storage Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 15
- 239000004020 conductor Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】 以下の順序に従って本発明を説明する。[Detailed description of the invention] The present invention will be described in the following order.
Ａ、産業上の利用分野
Ｂ１発明のｉ妻
Ｃ１従来技術
り２発明か解決しようとする問題点
Ｅ１間翅点を解決するための手段
Ｆ１作用
Ｇ、実施例［第１図乃至第７図］
Ｈ００発明効果
（Ａ、産業−１−の利用分野）
本発明は半導体装置の製造方法、特に中空パッケージ内
に半導体素子を収納した半導体装置の製造方法に関する
。A. Field of industrial application B1 Wife of the invention C1 Prior art 2 Problems to be solved by the invention E1 Means for solving the problem F1 Effects G. Examples [Figures 1 to 7] H00 Effects of the Invention (A, Field of Application of Industry-1-) The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for manufacturing a semiconductor device in which a semiconductor element is housed in a hollow package.
（Ｂ 発明の概要）
本発明は、中空パッケージ内に単導体素子を収納した半
導体装置の製造方法において、耐湿性を高めるため、
感光液を゛ｈ導体素子収納パッケージの表面に付着させ
、その感光液を露光して硬化させることにより防湿膜と
するものである。(B. Summary of the Invention) The present invention provides a method for manufacturing a semiconductor device in which a single conductor element is housed in a hollow package, in which a photosensitive liquid is attached to the surface of the conductor element storage package, and the photosensitive liquid is applied to the surface of the conductor element storage package. A moisture-proof film is created by exposing the liquid to light and curing it.
（Ｃ，従来技術）
半導体装置として、樹脂からなる中空パッケージに半導
体素子を収納したものがあり、このような半導体装置に
おいて半導体素子の電極の引き出しは、インサート成形
によりパッケージに一体的に形成されたり−トと、該リ
ードのパッケージ内部側の端部と半導体素子の電極との
間を接続するコネクトワイヤと、によって行ねねる。(C, Prior Art) Some semiconductor devices house semiconductor elements in hollow packages made of resin, and in such semiconductor devices, the electrodes of the semiconductor elements are formed integrally with the package by insert molding. - and a connect wire that connects the end of the lead on the inside of the package and the electrode of the semiconductor element.
（Ｄ 発明が解決しようとする問題点）ところで、を導
体装置の信頼度の向−七を阻む要因として耐湿性の不充
分さがあった。即ち、パッケージ外部からパッケージと
それ塞ぐキャップとの間隙あるいは樹脂製のパッケージ
のリードとの界面を通してパッケージ内部に水分か侵入
し、その侵入した水分が半導体素子の表面に付着すると
半導体素子を劣化させる虞れかある。特に、電極バット
間に水分が付着すると必要な絶縁性が失われる等重大な
結果をもたらす虞れかある。(D. Problems to be Solved by the Invention) By the way, one of the factors that hinders the reliability of conductor devices is insufficient moisture resistance. That is, moisture may enter the package from outside the package through the gap between the package and the cap that closes it, or through the interface with the leads of the resin package, and if the intruded moisture adheres to the surface of the semiconductor element, it may deteriorate the semiconductor element. There is. In particular, if moisture adheres between the electrode batts, there is a risk of serious consequences such as loss of necessary insulation.
本発明はこのような問題点を解決すべく為されたもので
あり、耐湿性の向上を図ることを目的とする。The present invention was made to solve these problems, and an object of the present invention is to improve moisture resistance.
（Ｅ、問題点を解決するだめの手段）
本発明半導体装置の製造方法は上記問題点を解決するた
め、感光液を律導体素子収納パッケージの表面に付着さ
せ、その感光液を露光して硬化させることにより防湿膜
とすることを特徴とする。(E. Means to Solve the Problem) In order to solve the above-mentioned problem, the method for manufacturing a semiconductor device of the present invention involves depositing a photosensitive liquid on the surface of the conductor element storage package, and exposing and curing the photosensitive liquid. The film is characterized by forming a moisture-proof film.
（Ｆ、作用）
本発明半導体装置の製造方法によれば、パッケージの不
導体素子収納側の表面を隈無く感光液で覆うことができ
、そして、その感光液を露光することにより耐湿性を与
えて防湿膜とすることによりパッケージの半導体素子収
納側の表面を防湿膜で保護することができ、延いては耐
湿性の向上を図ることができる。(F. Effect) According to the method for manufacturing a semiconductor device of the present invention, the surface of the package on the nonconductor element storage side can be thoroughly covered with a photosensitive liquid, and by exposing the photosensitive liquid, moisture resistance can be imparted. By forming a moisture-proof film, the surface of the package on the side where the semiconductor element is housed can be protected with the moisture-proof film, and the moisture resistance can be improved.
そして、防湿膜を存在させたくない領域があるときは露
光の際にその領域が感光しないようにマスクすわば、即
ち、付着させた感光液を選択的に露光させねば、その後
、その防湿膜を存在させたくない領域上の感光液を現象
液で洗い流すことにより、その領域に防湿膜が存在しな
いようにすることが容易に為し得る。If there is an area where you do not want the moisture-proof film to be present, it is necessary to mask that area so that it is not exposed to light during exposure. By washing away the photosensitive liquid on the area where it is not desired to exist with the phenomenon liquid, it is possible to easily prevent the presence of the moisture-proof film in that area.
（Ｇ、実施例）［第１図乃至第７図］
以下、本発明半導体装置の製造方法を図示実施例に従っ
て詳細に説明する。(G. Embodiment) [FIGS. 1 to 7] Hereinafter, a method for manufacturing a semiconductor device of the present invention will be described in detail according to the illustrated embodiment.
第１図乃至第７図は本発明を光集積回路装置の製造方法
に適用した一つの実施例を二［程順に示すものである。FIGS. 1 to 7 sequentially show an embodiment in which the present invention is applied to a method for manufacturing an optical integrated circuit device.
第１図（Ａ）、（Ｂ）は感光液を表向に付着させる光集
積回路装置を示すもので、同図（Ａ）は斜視図、同図（
Ｂ）は断面図である。1(A) and 1(B) show an optical integrated circuit device in which a photosensitive liquid is attached to the surface; FIG. 1(A) is a perspective view, and FIG.
B) is a cross-sectional view.
図面において、１は樹脂からなるパッケージ、２はコバ
ール等の金属からなる放熱板で、該放熱板２の中央部に
光集積回路３が配置されている。In the drawing, 1 is a package made of resin, 2 is a heat sink made of metal such as Kovar, and an optical integrated circuit 3 is arranged in the center of the heat sink 2.
謹、光集積回路３は表面部にフォーカスサーボ用及びト
ラッキングサーボ用の複数のフォトダイオード４．４、
・・・が形成されたシリコン半導体基板５と、後でその
表面の一部にチップポンディングされるレーザタイオー
トチップと、後で半導体基板５のフォトダイオード４．
４、・・・形成領域上にポンディングされるプリズムと
、から構成される。従って、第１図に示すこの段階では
光集積回路３はまだ未完成である。The optical integrated circuit 3 has a plurality of photodiodes 4.4 for focus servo and tracking servo on its surface.
. . , a laser tie-out chip that will be chip-bonded later on a part of the surface thereof, and a photodiode 4 . . . on the semiconductor substrate 5 later.
4. Consists of a prism that is bonded onto the formation area. Therefore, at this stage shown in FIG. 1, the optical integrated circuit 3 is still unfinished.
６．６、・・・はリード、７．７、・・・は５亥リード
６．６、・・・とそれに対応するところの半導体基板５
の電極パッドとの間を接続するコネクトワイヤである。6.6, . . . are leads, 7.7, . . . are 5 lead 6.6, . . . and corresponding semiconductor substrate 5
This is a connect wire that connects between the electrode pads.
次に第１図に示した光集積回路装置をＵＶ（紫外線）光
に感光するＵＶ感光液に浸漬するあるいは光集積回路装
置の表面にＵＶ感光液を滴下することにより光集積回路
装置の表面にＵＶ感光液からなる膜を形成する。第２図
はＬＩＶ感光液からなる膜が形成された状態の光集積回
路装置を示す断面図であり、８はその膜、即ちＵＶ感光
膜である。Next, the optical integrated circuit device shown in FIG. 1 is immersed in a UV photosensitive liquid that is sensitive to UV (ultraviolet) light, or the UV photosensitive liquid is dropped onto the surface of the optical integrated circuit device. A film made of UV photosensitive liquid is formed. FIG. 2 is a sectional view showing an optical integrated circuit device on which a film made of LIV photosensitive liquid is formed, and 8 is the film, that is, a UV photosensitive film.
次に断面図である第３図に示すように半導体基板５のフ
ォトタイオード４．４、・・・が形成された領域上にプ
リズム９を配置する。Next, as shown in FIG. 3 which is a cross-sectional view, a prism 9 is placed on the region of the semiconductor substrate 5 where the photodiodes 4, 4, . . . are formed.
次にレーザダイオードチップをボンディングすべき領域
１１に光が届かないようにマスクした状態で露光処理を
施ずことによりｔ＋Ｖ感光膜８を硬化させて断面図であ
る第４図に示すように耐湿性、撥水性を帯ひた防湿膜１
ｏとする。該防湿膜ｌＯはプリズム９Ｆにおいては硬化
してプリズム９を半導体基板５に固着する接着材として
も機能する。尚、同図においてＭはマスクである。Next, the t+V photoresist film 8 is cured by not performing exposure processing while masking the region 11 where the laser diode chip is to be bonded so that the light does not reach the region 11, and the film becomes moisture resistant as shown in FIG. 4, which is a cross-sectional view. , water-repellent moisture-proof membrane 1
o. The moisture-proof film IO hardens in the prism 9F and also functions as an adhesive for fixing the prism 9 to the semiconductor substrate 5. In addition, in the figure, M is a mask.
その後、現像処理により第５図に示すようにレーザダイ
オードチップをホンティングすべき領域１１上のＵＶ感
光膜８を除去する。Thereafter, as shown in FIG. 5, the UV photoresist film 8 on the area 11 where the laser diode chip is to be printed is removed by a development process.
しかる後、第６図に示すようにレーザダイオードチップ
１２を１把領域１１Ｆにホンティングする。Thereafter, as shown in FIG. 6, the laser diode chip 12 is placed in one area 11F.
その後、レーサタイオートチップ１２表面の電極と半導
体基板５の配線膜との間の例えばコネクトワイヤによる
接続を行ったうえて透明キャップ１３をパッケージ１の
開口した上端面に接着して封止をする。第７図は封止を
して完成した状態の光集積回路装置を分解して示す斜視
図である。Thereafter, a connection is made between the electrode on the surface of the laser tie auto chip 12 and the wiring film of the semiconductor substrate 5 using, for example, a connect wire, and then a transparent cap 13 is bonded to the open upper end surface of the package 1 for sealing. . FIG. 7 is an exploded perspective view of the sealed optical integrated circuit device.
このような光集積回路装置の製造方法によれば、パッケ
ージ１の光集積回路３の表面、特に電極パッドが多数近
接して配置された表面を感光液を感光させることによっ
て形成した耐湿性に優れ撥水性を有する防湿膜ＩＯで隈
無く保護することかてきる。従って、パッケージ１の耐
湿性か悪くても光集積回路３、特に半導体基板５を防湿
膜１０によって湿気から保護することかできる。According to this method of manufacturing an optical integrated circuit device, the surface of the optical integrated circuit 3 of the package 1, especially the surface on which a large number of electrode pads are arranged close to each other, is formed by exposing the surface of the optical integrated circuit 3 with a photosensitive liquid and has excellent moisture resistance. It can be thoroughly protected with a moisture-proof film IO that has water repellency. Therefore, even if the moisture resistance of the package 1 is poor, the optical integrated circuit 3, especially the semiconductor substrate 5, can be protected from moisture by the moisture-proof film 10.
そして、紫外線はプリズム９を透過するので、ＵＶ感光
膜８を半導体基板５表面に付着させた後プリズム９を半
導体基板５のフォトタイオート形成領域上に置いた後露
光処理を竹えば、プリズム９下のＵＶ感光膜８を硬化さ
せて単に防湿膜１０とするたけでなくプリズム９を半導
体基板５表面に固着する接着材にもすることができる。Since the ultraviolet rays pass through the prism 9, if the UV photoresist film 8 is attached to the surface of the semiconductor substrate 5, the prism 9 is placed on the phototiret formation area of the semiconductor substrate 5, and then an exposure process is performed. By curing the lower UV photosensitive film 8, it can be used not only as a moisture-proof film 10 but also as an adhesive for fixing the prism 9 to the surface of the semiconductor substrate 5.
そして、感光液を露光して防湿膜にするので、防湿膜を
形成したくない領域かあるときはその領域に光が照射さ
れないようにマスクをして露光処理を施し、その後、現
像処理によって感光液の非露光で硬化していない部分を
除去することとず九ば防湿膜を形成したくない領域には
防湿膜を存在させないようにすることができる。Then, the photosensitive liquid is exposed to light to form a moisture-proof film, so if there are areas where you do not want to form a moisture-proof film, the exposure process is carried out with a mask so that the light does not irradiate that area, and then the photosensitive solution is exposed through development process. In addition to removing the unexposed and uncured portions of the liquid, it is possible to prevent the moisture-proof film from being present in areas where it is not desired to form the moisture-proof film.
このように、感光液を感光させて形成した耐湿膜１０に
よって光集積回路３、特にその半導体装置５の表面を直
接保護するので、パッケージ１自身の湿気侵入防止機能
が弱くても光集積回路３、特に半導体装置５を耐湿膜１
０によって湿気から有効に守ることができる。従って、
キャップ１３による封止は防塵機能させ果せば良く防湿
性はなくても良くなる。In this way, the surface of the optical integrated circuit 3, especially the semiconductor device 5 thereof, is directly protected by the moisture-resistant film 10 formed by exposing the photosensitive liquid to light, so even if the moisture intrusion prevention function of the package 1 itself is weak, the optical integrated circuit 3 can be protected. In particular, the semiconductor device 5 is coated with a moisture-resistant film 1.
0 provides effective protection from moisture. Therefore,
The sealing with the cap 13 does not need to be moisture-proof as long as it has a dustproof function.
（Ｈ，発明の効果）
以」−に述べたように、本発明半導体装置の製造方法は
、半導体素子ホンティング部に半導体素子がベレットホ
ンデインクされ、゛ｉ導体素子とそれに対応するり−ト
との間がコネクトワイヤで接続された状態の半導体素子
収納パッケージの少なくとも半導体素子収納側の表面に
露光されると硬化して防水性を備える感光液を付着させ
、次いで、半導体素子収納パッケージの半導体素子収納
側の表面に付着した一上記感光液を全面的ないしは選択
的に露光して硬化させることにより防湿膜とすることを
特徴とするものである。(H. Effects of the Invention) As described above, in the method for manufacturing a semiconductor device of the present invention, a semiconductor element is attached to a semiconductor element mounting part, and an i-conductor element and a corresponding strip are formed. A photosensitive liquid that hardens and becomes waterproof when exposed to light is applied to at least the surface of the semiconductor element housing side of the semiconductor element housing package that is connected to the semiconductor element housing package with a connect wire, and then A moisture-proof film is formed by fully or selectively exposing and curing the photosensitive liquid attached to the surface of the element housing side.
従って、本発明半導体装置の製造方法によれば、パッケ
ージの半導体素子収納側の表面を隈無く感光液で覆うこ
とができ、そして、その感光液を露光することにより耐
湿性を惺えて防湿膜とすることによりパッケージの半導
体素子収納側の表面を防湿膜で保護することがてき、延
いては耐湿性の向上を図ることができる。Therefore, according to the method of manufacturing a semiconductor device of the present invention, the surface of the package on the side where the semiconductor element is housed can be completely covered with the photosensitive liquid, and by exposing the photosensitive liquid, the moisture resistance is reduced and a moisture-proof film is formed. By doing so, the surface of the package on the side where the semiconductor element is housed can be protected with a moisture-proof film, and the moisture resistance can be improved.
そして、防４膜を存在させたくない領域かあるときは露
光の際にその領域か感光しないようにマスクすれば、即
ち、付着した感光液を選択的に露光させれば、その後、
防湿膜を存在させたくない領域上の感光液を現象液て洗
い流すことにより、その領域に防湿膜か存在しないよう
にすることが容易に為し１；する。If there is an area where you do not want the anti-4 film to be present, you can mask that area so that it is not exposed to light during exposure, that is, if you selectively expose the attached photosensitive liquid, then,
By washing away the photosensitive liquid on the area where the moisture-proof film is not desired to be present with a phenomenon liquid, it is easy to eliminate the presence of the moisture-proof film in that area.
図面は本発明半導体装置の製造方法の一つの実施例を工
程順に示すもので、第１図（Ａ）、（Ｂ）は感光液を表
面に付着させる前の段階における装置を示すもので、同
図（Ａ）は全体を示す斜視図、同図（Ｂ）は断面図、第
２図は感光膜が形成された状態における半導体素子を拡
大して示す断面図、第３図はプリズムが配置された状態
における半導体素子を拡大して示す断面図、第４図は感
光処理を終えた状態における半導体素子を拡大して示す
断面図、第５図は現像処理における半導体素子を拡大し
て示す断面図、第６図はレーザダイオードチップをボン
ディングした状態における半導体素子を拡大して示す断
面図、第７図は完成した半導体装置の全体を分解して示
す斜視図である。
符月の説明
１・・・パッケージ、３・・・半導体素子、６・・・リ
ード、８・・・感光液、
１０・・・防湿膜。The drawings show one embodiment of the method for manufacturing a semiconductor device according to the present invention in the order of steps. Figure (A) is a perspective view showing the whole, Figure (B) is a cross-sectional view, Figure 2 is an enlarged cross-sectional view of the semiconductor element with a photoresist film formed thereon, and Figure 3 is a cross-sectional view showing the semiconductor element with a photoresist film formed thereon. FIG. 4 is an enlarged cross-sectional view of the semiconductor element in a state where it has been exposed to light; FIG. 5 is an enlarged cross-sectional view of the semiconductor element in a developed state; FIG. , FIG. 6 is an enlarged sectional view showing the semiconductor element with a laser diode chip bonded thereto, and FIG. 7 is an exploded perspective view showing the entire completed semiconductor device. Description of notes 1...Package, 3...Semiconductor element, 6...Lead, 8...Photosensitive liquid, 10...Moisture-proof film.
Claims (1)
トボンディングされ、半導体素子とそれに対応するリー
ドとの間がコネクトワイヤで接続された状態の半導体素
子収納パッケージの少なくとも半導体素子収納側の表面
に露光されると硬化して防水性を備える感光液を付着さ
せ、 次いで、半導体素子収納パッケージの半導体素子収納側
の表面に付着した上記感光液を全面的ないしは選択的に
露光して硬化させることにより防湿膜とする ことを特徴とする半導体装置の製造方法(1) At least the surface of the semiconductor element housing side of the semiconductor element housing package in which the semiconductor element is pellet-bonded to the semiconductor element bonding part and the semiconductor element and its corresponding leads are connected by a connect wire is exposed to light. A photosensitive liquid that hardens and becomes waterproof is applied, and then the photosensitive liquid adhered to the surface of the semiconductor element housing side of the semiconductor element storage package is fully or selectively exposed to light and cured to form a moisture-proof film. A method for manufacturing a semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140524A JPS63304649A (en) | 1987-06-04 | 1987-06-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140524A JPS63304649A (en) | 1987-06-04 | 1987-06-04 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63304649A true JPS63304649A (en) | 1988-12-12 |
Family
ID=15270672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62140524A Pending JPS63304649A (en) | 1987-06-04 | 1987-06-04 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63304649A (en) |
-
1987
- 1987-06-04 JP JP62140524A patent/JPS63304649A/en active Pending
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