JPS63304620A - Heat-treatment furnace for semiconductor - Google Patents
Heat-treatment furnace for semiconductorInfo
- Publication number
- JPS63304620A JPS63304620A JP13900587A JP13900587A JPS63304620A JP S63304620 A JPS63304620 A JP S63304620A JP 13900587 A JP13900587 A JP 13900587A JP 13900587 A JP13900587 A JP 13900587A JP S63304620 A JPS63304620 A JP S63304620A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- gas
- pressure
- flow rate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000010438 heat treatment Methods 0.000 title claims description 38
- 239000007789 gas Substances 0.000 description 49
- 235000012431 wafers Nutrition 0.000 description 15
- 239000012535 impurity Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
、乗上のＩ
この発明は半導体ウェーハを熱処理する半導体用熱処理
炉に関する。DETAILED DESCRIPTION OF THE INVENTION This invention relates to a semiconductor heat treatment furnace for heat treating semiconductor wafers.
従ｊＪと皮韮−
半導体用熱処理炉は、ガスを炉内に吸入して、半導体ウ
ェハーを熱処理し、ガスは排気管から排出するようにな
っている。A heat treatment furnace for semiconductors heat-treats semiconductor wafers by sucking gas into the furnace, and exhausts the gas through an exhaust pipe.
この半導体用熱処理炉の排気管は、単なる円管でありこ
れをダクトに接続してあって、この排気管とダクトを介
してガスを外部に排出するようになっている。The exhaust pipe of this heat treatment furnace for semiconductors is a simple circular pipe connected to a duct, and gas is discharged to the outside through the exhaust pipe and the duct.
発明が 決しようとする囚 、−ζ
このため炉内に吸入したガスの流量と排出するガスの流
ｍとの関係で、炉内の圧力がプラス圧になったりマイナ
ス圧になったりしていた。マイナス圧になった場合には
、排気管および配管等の連結部から不純なガスが炉内に
入りこんでいた。また炉の蓋を聞けたときなどに炉口か
ら炉体ルーム内のガスを炉内に吸い込んでしまっていた
。このように、炉内の圧力が不安定でありかつ不純なガ
スが炉内に入りこむ問題があった。For this reason, depending on the relationship between the flow rate of gas sucked into the furnace and the flow rate m of gas discharged, the pressure inside the furnace was either positive or negative. . If the pressure became negative, impure gas would enter the furnace through connections such as exhaust pipes and piping. Also, when the lid of the furnace was opened, the gas inside the furnace body room was sucked into the furnace through the furnace mouth. As described above, there was a problem that the pressure inside the furnace was unstable and impure gas entered the furnace.
発Ｊし４月」工
この発明は一上記問題点を解決するためになされたもの
であり、熱処理中に炉内の圧力を安定させかつプラス圧
に保つことができる半導体用熱処理炉を提供することを
目的としている。This invention was made in order to solve the above problems, and provides a heat treatment furnace for semiconductors that can stabilize the pressure inside the furnace and maintain a positive pressure during heat treatment. The purpose is to
児ｊトλ歪」し
この発明はガスを炉内に吸入して半導体ウェハーを熱処
理して前記ガスを排気部から排出する半導体用熱処理炉
において、設定炉内圧と実際の炉内圧の偏差を検知して
、前記排気部に設置した流量調節装置に前記偏差量に対
応する信号を送って前記流量調節装置を作動して、前記
排気部の排気ガス流量を制御する構成となることを特徴
とする半導体用熱処理炉を要旨としている。This invention detects the deviation between the set furnace internal pressure and the actual furnace internal pressure in a semiconductor heat treatment furnace that sucks gas into the furnace, heat-processes semiconductor wafers, and exhausts the gas from the exhaust section. and transmits a signal corresponding to the deviation amount to a flow rate adjustment device installed in the exhaust section to operate the flow rate adjustment device to control the exhaust gas flow rate in the exhaust section. The main topic is heat treatment furnaces for semiconductors.
司題虞を 決するための 。To resolve the issue.
第１図を参照する。Please refer to FIG.
半導体用熱処理炉１の炉内に導入ガス（たとえばＮ２ガ
ス）を吸入して半導体ウェハー６を熱処理覆る。そして
そのガスを排気部２０から排出するようになっている。Introduced gas (for example, N2 gas) is sucked into the semiconductor heat treatment furnace 1 to heat-treat the semiconductor wafer 6. The gas is then exhausted from the exhaust section 20.
この排気部２０には、流量調節装置１１が設けられてい
る。この流量調節装置１１には、設定炉内圧と実際の炉
内圧の偏差を検知してその偏差量に対応する信号を送り
、それにより流量調節装置１１を作動するようになって
いる。この流量調節装置１１の作動により、排気部２０
における排気すべきガスの流量を制御するようになって
いる。This exhaust section 20 is provided with a flow rate adjustment device 11 . The flow rate adjustment device 11 is configured to detect a deviation between the set furnace internal pressure and the actual furnace internal pressure, and send a signal corresponding to the amount of deviation, thereby operating the flow rate adjustment device 11. Due to the operation of this flow rate adjustment device 11, the exhaust section 20
The flow rate of the gas to be exhausted is controlled.
１−皿
炉内圧力を流量調節装置の作動により、熱処理中の炉内
圧力を安定させかつプラス圧に保つことができる。The one-dish furnace pressure can be stabilized and maintained at a positive pressure by operating the flow rate regulating device.
支−九一死
半導体用熱処理炉１はたとえば石英により作られている
。半導体用熱処理炉１の周囲にはヒータ２が設けられて
いる。このヒータ２は図示しない炉体に取付けられてい
る。半導体用熱処理炉１はこの炉体ルーム内に設定され
ている。The semiconductor heat treatment furnace 1 is made of quartz, for example. A heater 2 is provided around the semiconductor heat treatment furnace 1 . This heater 2 is attached to a furnace body (not shown). A semiconductor heat treatment furnace 1 is set within this furnace body room.
半導体用熱処理炉１の炉内には、ボート５が設定されて
いる。このボート５には複数の半導体ウェハー６が並べ
て設定されている。A boat 5 is set inside the semiconductor heat treatment furnace 1 . In this boat 5, a plurality of semiconductor wafers 6 are set side by side.
ボート５は台４にのせである。台４は支持軸３に固定さ
れている。支持軸３は矢印方向に回転可能である。半導
体用熱処理炉１の炉口１３には蓋１ａが開閉可能に取付
けられている。Boat 5 is placed on platform 4. The stand 4 is fixed to the support shaft 3. The support shaft 3 is rotatable in the direction of the arrow. A lid 1a is attached to the furnace mouth 13 of the semiconductor heat treatment furnace 1 so as to be openable and closable.
半導体用熱処理炉１の頂部には、ガス吸入管７が設けら
れている。このガス吸入管７はガス供給手段１４に接続
されている。ガス供給手段１４は、Ｎ２ガスを吸入管７
を介して半導体用熱処理炉１内に送ることができるよう
になっている。A gas suction pipe 7 is provided at the top of the semiconductor heat treatment furnace 1 . This gas suction pipe 7 is connected to a gas supply means 14. The gas supply means 14 supplies N2 gas to the suction pipe 7.
It can be sent into the semiconductor heat treatment furnace 1 through the.
半導体用熱処理炉１の下部には、排気部２０が設けられ
ている。排気部２０の排気管８は、半導体用熱処理炉１
の下部に接続されている。排気管８の途中には接続管９
が設けられている。この接続管９には炉内圧計１０が接
続されている。この炉内圧計１０は、半導体用熱処理炉
１の炉内の実際の炉内圧を検出する。制御装＠１２はす
でに設定された設定炉内圧とこの実際の炉内圧の偏差を
求めこの偏差量に対応する信号を作る。この信号により
流量調節装置１１の開度を自動的に調節できるようにな
っている。この流量調節装置１１は、駆動源を有するバ
ルブで例えば構成できる。駆動源によりバルブの開度を
設定するのである。この流量調節装置１１は、排気管８
の途中に設けられている。なおこの排気管８および接続
管９はたとえば石英により作られている。At the bottom of the semiconductor heat treatment furnace 1, an exhaust section 20 is provided. The exhaust pipe 8 of the exhaust section 20 is connected to the semiconductor heat treatment furnace 1.
is connected to the bottom of the. There is a connecting pipe 9 in the middle of the exhaust pipe 8.
is provided. A furnace pressure gauge 10 is connected to this connecting pipe 9. The furnace pressure gauge 10 detects the actual furnace pressure inside the semiconductor heat treatment furnace 1 . The control device @12 determines the deviation between the set furnace internal pressure that has already been set and this actual furnace internal pressure, and generates a signal corresponding to this deviation amount. Based on this signal, the opening degree of the flow rate adjustment device 11 can be automatically adjusted. This flow rate adjustment device 11 can be configured, for example, by a valve having a driving source. The opening degree of the valve is set by the driving source. This flow rate adjustment device 11 has an exhaust pipe 8.
It is located in the middle of the. Note that the exhaust pipe 8 and the connecting pipe 9 are made of, for example, quartz.
使用に際しては、半導体用熱処理炉１はヒータ２で加熱
される。ガスをガス供給手段１４から送る。ガスは吸入
管７を介して半導体用熱処理炉１内に送られる。そして
ガスは排気管８を通り流量調節装置１１に達する。また
ガスは炉内圧計１０に達する。これにより随時炉内のガ
ス圧力が炉内圧計１０で検知され、制御装置１２は、そ
の実際の炉内圧とすでに設定されている炉内圧との偏差
を求め、得られた偏差量に対応する信号を作る。この信
号に基いて流量調節装置１１１１の開度を設定する。こ
れにより排気部２０の排気ガス流量を制御し、炉内圧力
を安定させかつプラス圧に保つようにする。When in use, the semiconductor heat treatment furnace 1 is heated by the heater 2 . Gas is sent from gas supply means 14. The gas is sent into the semiconductor heat treatment furnace 1 via the suction pipe 7. The gas then passes through the exhaust pipe 8 and reaches the flow rate regulator 11 . The gas also reaches the furnace pressure gauge 10. As a result, the gas pressure in the furnace is detected by the furnace pressure gauge 10 at any time, and the control device 12 calculates the deviation between the actual furnace pressure and the already set furnace pressure, and sends a signal corresponding to the obtained deviation amount. make. Based on this signal, the opening degree of the flow rate adjustment device 1111 is set. Thereby, the exhaust gas flow rate of the exhaust section 20 is controlled, and the pressure inside the furnace is stabilized and maintained at a positive pressure.
このように覆ることで炉内圧が外部の圧力（たとえば炉
体ルームの内圧）より高いので、半導体ウェハー６を拡
散処理中に炉体ルーツ、から炉口１３や排気管８の連結
部を通って炉内に不）ＪＴ！”；Ｊガス（例えば０２ガ
ス）が入りこまない。またＭｌａを矢印Ｘ方向に下げて
半導体ウェハー６を半導体用熱処理炉１がら出したり、
逆に半導体用熱処理炉１内に半導体ウェハー６を入れる
場合に、炉体ルーム内のガス、即ち半導体用熱処理炉１
の外のガスを半導体用熱処理炉１の炉内に吸い込むこと
がないため、不純ガス（例えば０２ガス）による半導体
ウェハー６の汚染をなくすことができる。なおこのよう
に炉口１３を開けて半導体ウェハー６を出し入れする場
合には、炉内圧が下がるため流量調節装置が作動して排
気口を閉じる。By covering in this way, the internal pressure of the furnace is higher than the external pressure (for example, the internal pressure of the furnace body room), so that the semiconductor wafer 6 is transported from the furnace root through the furnace mouth 13 and the exhaust pipe 8 connection part during the diffusion process. Not in the furnace) JT! "; J gas (for example, 02 gas) does not enter.Also, lower Mla in the direction of arrow X to take out the semiconductor wafer 6 from the semiconductor heat treatment furnace 1,
Conversely, when putting the semiconductor wafer 6 into the semiconductor heat treatment furnace 1, the gas in the furnace body room, that is, the semiconductor heat treatment furnace 1
Since gases other than the semiconductor heat treatment furnace 1 are not sucked into the semiconductor heat treatment furnace 1, contamination of the semiconductor wafer 6 by impure gas (for example, 02 gas) can be eliminated. Note that when the furnace port 13 is opened in this manner and the semiconductor wafer 6 is taken in or taken out, the pressure inside the furnace decreases, so the flow rate adjustment device is activated to close the exhaust port.
ところで、表１では、炉内圧と炉底における不純物ガス
（０２ガス）ｍ度の実験例を示している。この場合半導
体用熱処理炉１内は、Ｎ２ガス雰囲気となっている。そ
して不純物ガス０２のｍ度は０％である。そしてガス供
給手段１４からのＮ２ガス流量は、３０９／ｍｉｎとな
っている。By the way, Table 1 shows an experimental example of the furnace internal pressure and the impurity gas (02 gas) m degree at the furnace bottom. In this case, the inside of the semiconductor heat treatment furnace 1 is in an N2 gas atmosphere. The m degree of impurity gas 02 is 0%. The flow rate of N2 gas from the gas supply means 14 is 309/min.
この条件下で半導体用熱処理炉の底において０２ガス淵
麿を測定してみた。炉内圧が０ｍｍＨ２Ｏの場合は０２
ガス濃度が０％で問題がない。ところが炉内圧がマイナ
スになると、不純な０２ガス濃度はかなり増える。この
ようなことから半導体用熱処理炉１内の炉内圧をプラス
圧にすることが重要であることがわかる。Under these conditions, the 02 gas fuchimaro was measured at the bottom of the semiconductor heat treatment furnace. 02 if the furnace pressure is 0mmH2O
There is no problem when the gas concentration is 0%. However, when the pressure inside the furnace becomes negative, the concentration of impure 02 gas increases considerably. From these facts, it can be seen that it is important to make the furnace internal pressure in the semiconductor heat treatment furnace 1 a positive pressure.
ところでこの発明は上記実施例に限定されるものではな
い。例えば炉内圧計１０は、実施例では半導体用熱処理
炉１の下部側のガス圧力を計っている。しかしこの炉内
圧計１０は半導体用熱処理炉１の他のどの部分に接続し
てもよい。即ち圧力測定用のガスは半導体用熱処理炉１
のどの部分からでも取り出してもよいのである。また半
導体用熱処理炉１は下部開放型の縦型炉であるが上部開
放型の縦型炉であっても横型炉であってもシール性のあ
る熱処理炉であればよい。However, the present invention is not limited to the above embodiments. For example, the furnace pressure gauge 10 measures the gas pressure on the lower side of the semiconductor heat treatment furnace 1 in the embodiment. However, this furnace pressure gauge 10 may be connected to any other part of the semiconductor heat treatment furnace 1. That is, the gas for pressure measurement is in the semiconductor heat treatment furnace 1.
It can be taken out from any part of the throat. Further, although the semiconductor heat treatment furnace 1 is a vertical furnace with an open bottom, it may be a vertical furnace with an open top or a horizontal furnace as long as it has a sealing property.
１１匹１１
以上説明したことから明らかなようにこの発明によれば
設定炉内圧と実際の炉内圧の偏差を検知してその偏差量
に対応する信号に基づいて流量調節装置を作動するよう
になっている。これにより排気するガス流量を制御する
ので、半導体用熱処理炉の炉内圧力をプラス圧に保つこ
とができる。このことから炉内圧力が安定し、かつ半導
体ウェハーの熱処理中に不純なガスが入りこまない。ま
た半導体ウェハーの出し入れ時に炉体ルーム内のガスを
炉内に吸い込むことがなく、不純物ガスによる半導体ウ
ェハーの汚染がない。これらのことから高ｌ１ｌｉ度の
半う９体ウェハーを製造することが可能となる。As is clear from the above explanation, according to the present invention, the deviation between the set furnace internal pressure and the actual furnace internal pressure is detected, and the flow rate adjustment device is operated based on a signal corresponding to the amount of deviation. ing. Since the flow rate of the gas to be exhausted is thereby controlled, the internal pressure of the semiconductor heat treatment furnace can be maintained at a positive pressure. This stabilizes the pressure inside the furnace and prevents impure gases from entering during the heat treatment of semiconductor wafers. Furthermore, gas in the furnace body room is not sucked into the furnace when semiconductor wafers are taken in and out, and the semiconductor wafers are not contaminated by impurity gases. From these facts, it becomes possible to manufacture half-9 body wafers with a high degree of llili.
第１図はこの発明の好適な実施例を示す図である。 １・・・半導体用熱処理炉 ２・・・ヒータ ６・・・半導体ウェハー ７・・・吸入管 ８・・・排気管 ９・・・接続管 １０・・・炉内圧針 １１・・・流量調節装置 １２・・・制御装置 １３・・・炉口 １４・・・ガス供給手段 表 １ FIG. 1 is a diagram showing a preferred embodiment of the invention. 1...Semiconductor heat treatment furnace 2... Heater 6...Semiconductor wafer 7...Suction pipe 8...Exhaust pipe 9...Connecting pipe 10...Furnace pressure needle 11...Flow rate adjustment device 12...control device 13... Furnace mouth 14...Gas supply means Table 1
Claims (1)
ガスを排気部から排出する半導体用熱処理炉において、
設定炉内圧と実際の炉内圧の偏差を検知して、前記排気
部に設置した流量調節装置に前記偏差量に対応する信号
を送つて前記流量調節装置を作動して、前記排気部の排
気ガス流量を制御する構成となることを特徴とする半導
体用熱処理炉。A semiconductor heat treatment furnace that sucks gas into the furnace, heat-treats a semiconductor wafer, and discharges the gas from an exhaust part,
The deviation between the set furnace internal pressure and the actual furnace internal pressure is detected, and a signal corresponding to the amount of deviation is sent to the flow rate adjustment device installed in the exhaust section to operate the flow rate adjustment device, thereby controlling the exhaust gas in the exhaust section. A heat treatment furnace for semiconductors characterized by having a configuration that controls the flow rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62139005A JP2596748B2 (en) | 1987-06-04 | 1987-06-04 | Heat treatment furnace for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62139005A JP2596748B2 (en) | 1987-06-04 | 1987-06-04 | Heat treatment furnace for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63304620A true JPS63304620A (en) | 1988-12-12 |
| JP2596748B2 JP2596748B2 (en) | 1997-04-02 |
Family
ID=15235256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62139005A Expired - Fee Related JP2596748B2 (en) | 1987-06-04 | 1987-06-04 | Heat treatment furnace for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2596748B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0210826A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electron Corp | Diffusion furnace device |
| JPH0353517A (en) * | 1989-07-20 | 1991-03-07 | Tokyo Electron Sagami Ltd | Normal pressure treatment device |
| US5088922A (en) * | 1990-01-23 | 1992-02-18 | Tokyo Electron Sagami Limited | Heat-treatment apparatus having exhaust system |
| JPH04247618A (en) * | 1990-12-03 | 1992-09-03 | Samsung Electron Co Ltd | Impurity diffusion furnace |
| US5407349A (en) * | 1993-01-22 | 1995-04-18 | International Business Machines Corporation | Exhaust system for high temperature furnace |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064428A (en) * | 1983-09-19 | 1985-04-13 | Fujitsu Ltd | Oxidizing and diffusing method |
| JPS6080225A (en) * | 1983-10-11 | 1985-05-08 | Hitachi Ltd | Device for drying process |
-
1987
- 1987-06-04 JP JP62139005A patent/JP2596748B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064428A (en) * | 1983-09-19 | 1985-04-13 | Fujitsu Ltd | Oxidizing and diffusing method |
| JPS6080225A (en) * | 1983-10-11 | 1985-05-08 | Hitachi Ltd | Device for drying process |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0210826A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electron Corp | Diffusion furnace device |
| JP2502692B2 (en) * | 1988-06-29 | 1996-05-29 | 松下電子工業株式会社 | Diffusion furnace device |
| JPH0353517A (en) * | 1989-07-20 | 1991-03-07 | Tokyo Electron Sagami Ltd | Normal pressure treatment device |
| US5088922A (en) * | 1990-01-23 | 1992-02-18 | Tokyo Electron Sagami Limited | Heat-treatment apparatus having exhaust system |
| JPH04247618A (en) * | 1990-12-03 | 1992-09-03 | Samsung Electron Co Ltd | Impurity diffusion furnace |
| US5407349A (en) * | 1993-01-22 | 1995-04-18 | International Business Machines Corporation | Exhaust system for high temperature furnace |
| US5567149A (en) * | 1993-01-22 | 1996-10-22 | International Business Corporation | Exhaust system for high temperature furnace |
| US5752819A (en) * | 1993-01-22 | 1998-05-19 | International Business Machines Corporation | Exhaust system for high temperature furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2596748B2 (en) | 1997-04-02 |
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