JPS63302602A - Semiconductor device - Google Patents

Abstract

PURPOSE:To operate a semiconductor device with the optimum characteristic, by blocking a high frequency component by a signal line which becomes the path of a high frequency signal and a power line, and connecting them via a communication line with prescribed length which passes A power source power. CONSTITUTION:At the input side of a high frequency semiconductor device formed with a case 1, a semiconductor chip 2, matching substrates 4 and 5, and metallic conductors 6 and 7, and the power line 15 is formed on a line substrate 8 with the signal line 10. The line 15 is formed in a shape of horizontal L that the communication line 15a with the prescribed length is communicated with the side part of the line 10 orthogonally, and is formed with a gold pattern, etc., simultaneously with the line 10. Also, at the tip part of the line 15 at a side opposite to the line 15a, a power source lead 16 made of gold plating, etc., is arranged in parallel with a signal lead 12, and is joined with soldering of the gold or a tin. Furthermore, the line 15a is grounded via a chip capacitor 19 arranged adjacently with the substrate 8 by a metallic fine line 3. Also, the output side of the device is constituted similarly. In such a way, it is possible to operate the semiconductor device with the optimum kinesis.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device having an internal matching circuit.

[Conventional technology]

Ultra-high 8-wave high output semi-dedicated devices such as bipolar transistors and field effect transistors are device-in.

l! In order to avoid the intervention of unnecessary elements such as $Yuya filter and inductance, it is necessary to place the impedance matching circuit as close to the element itself as possible.

For this reason, in the ultra-striped output transistor, an impedance matching circuit is built into the container. A so-called internally matched semiconductor device has been realized.

Take this type of internally matched semiconductor device as an example.

The plan view shown in FIG. 5 will be explained. In the pronation, (υ is a source that is a good calyx-conducting material base made of copper plated with gold, etc., and (2) is a material that is bonded to this case (1) with a material such as tin solder. For example, In a semiconductor chip of a gallium arsenide field effect transistor (GaAaF]ET), a transistor element is formed on one side of an N-type gallium arsenide compound semiconductor substrate, and the source part and the case (1) are connected to a thin metal wire. (3) is electrically connected. (4) and (FD) are the semiconductor chip (
2) Input side and output side matching substrates are placed adjacent to each other on both sides of the case (1) and are bonded to the case (1) using gold/tin solder. Body (6
) and (7) are formed.

These conductors (6L(η) and the gate and drain parts of the semiconductor chip (2) are electrically connected by a thin metal wire (3)K. Source (1), semiconductor chip <2]% matching substrate <4 ) e (5), a high frequency semiparasitic crystal is formed on the gold on the 91 ply substrate with 4 fathoms (6J @ (7)).

(8J work (9) is the above matching board (4) and (5)
The input and output side line boards are adjacent to the semiconductor chip (2) and are connected to the case (1) on the opposite side of the semiconductor chip (2), and are made of an insulator such as alumina or ceramic. Signal lines (10) and (11) for transmitting signals such as gold patterns by vapor deposition are formed, and one of the signal lines (10) and (11) is formed with the above-mentioned bodies (6) and (6) on the above-mentioned matching substrates (4) and (5), respectively. A thin metal wire (3) that is electrically connected to the workpiece (7) is bonded to the other, and a metal wire (3) on the input and output sides is formed of copper plated with gold, etc., and is used for electrical connection with the outside. 12) and (13) are joined.

(14) is a cap that is joined to the upper surface protrusion (la) of the case (1) with a tin plate or the like to hermetically seal the inside thereof, and is made of copper plated with gold or the like.

By the way, the internal matching circuit included in the semiconductor device
% It is different from the capacitance using the inductance of the above-mentioned thin wire (3) and the high dielectric constant of the insulator.

The semiconductor device configured in this manner has signal leads (12) and (13), or external terminals on the input and output sides provided outside the semiconductor device, as shown in the circuit diagram in Figure 986. IILII! is connected to the H-13S path, and each of these external signal lines is further provided separately. iK
It is used by connecting an external power supply line extending Fc from a tk source circuit for supply. The external signal @ line and 1 @ source line are connected to the external signal line where the line portion of the external-source line is connected to the external signal line 9, which is formed to have a characteristic that does not affect the external signal line. being done.

In addition, in general, semiconductor devices that operate in the microphone A & band, for example, are connected between other devices or other circuits by lines with a characteristic impedance of 50Ω (ohms), and the characteristics of these lines are adjusted. In order to operate in an optimal state where the force becomes a traveling wave toward the load and does not become a reflected wave and warp, impedance matching 411! is applied to the input and output sides of the semiconductor kli[! Noh is provided.

By the way, the semiconductor device configured as described above is operated as follows. That is, a predetermined voltage is supplied from the external power supply line, and a positive voltage is applied to the drain of the semiconductor chip (2) and a negative voltage is applied to the gate of the semiconductor chip (2) from the external power supply lines arranged on the input side and the output side, respectively, through the external signal line. added. In addition, for example, if the microphone A wave is borrowed from the external signal line on the input side, connect the signal 5 lead (12) and the 41 line (lO) to the gold 14
The impedance is matched with the thin wire (force) and the matching board (4) and transmitted to the semiconductor chip (2). Then, for example, the amplified microphone AF signal 8 and the thin metal wire (3) on the output side are connected.
) and a matching board (5), and the signal is transmitted to an external signal line disposed on the output side via a signal line (11) and a signal lead (13).

[Problems to be Solved by the Invention] The conventional semiconductor device is constructed as described above, and the 4R5j'J-do (12) (13) of the Jokigyu proprietary device is It is connected to the 91% IIi circuit, and the 9 external signal lines are used for transmission as well as for supplying power. Therefore, the external power supply line connected to the 9 external signal lines must be formed to have a characteristic that does not affect the characteristic impedance of the 5 external signal lines in the target 8 wave loss band. However, the above-mentioned external transmitter has characteristic fluctuations due to formation precision, etc., and the above-mentioned 9 external transmission lines rarely have a problem in that the characteristic impedance changes due to the influence.◎ This invention This was done to solve the above-mentioned problems, and the purpose is to obtain a highly reliable semiconductor device with suitable characteristics and improved operation.

[Means for Solving the Problems] A semiconductor device Iri according to the present invention supplies power to a signal line to which a high frequency semiconductor element and an external circuit are connected and which serves as a path for a high frequency signal, and to the high frequency semi-isomorphic element. In addition, both of these are connected via a connecting line of a predetermined length that blocks high-frequency components and allows the power source power to pass through.

[Function J] The semiconductor device according to the present invention has a signal line as well as a Kik
! The communication line that connects the two is formed to have predetermined characteristics, and the signal line is not affected by the characteristic impedance of the power supply line, allowing highly reliable signal transmission. It has the function of

[Embodiment of the Invention] An embodiment of the invention will be described with reference to the drawings. It should be noted that the explanation of parts that overlap with the explanation of the conventional technology will be omitted as appropriate. FIG. 1 is a plan view showing an embodiment of the present invention.
This diagram differs from that shown in FIG. 5 in the following points.

That is, first, Koos (1), semiconductor chip (2),
On the input side of the high 8-wave half-calyx element formed of a matching substrate (4L (5) and a metal body (6L (7)), a matching substrate (
8) Ki&! with signal 18 line (lO) on top! source 1 route (1
5) is formed, and this power supply line (15) has a connecting line (15a) with a line length of 11 connected to the above-mentioned power line (l).
It has a horizontal shape connected at right angles to both parts of the signal line (IO), and is formed in a planned pattern using a vacuum evaporation method at the same time as the signal line (IO). Further, a power lead (16) made of copper plated with gold or the like is attached to the tip of the power line 1M (15) on the opposite side to the continuous feed N path (15a).
It is arranged parallel to (12) and joined with gold/tin solder. Furthermore, the connecting wire % (15a) is arranged by δ
Electrically connected to the 4P''(19);!
It has a configuration in which it is grounded at high frequencies.

Next, the output side of the high frequency semiconductor element has the same configuration as the input side, and has a symmetrical structure as the semiconductor chip (2).

By the way, the semiconductor device configured as described above has a power supply lead (
L8), and the negative voltage applied to the gate is supplied from the power supply lead (16) on the input side, and furthermore, for example, when the micro i signal is input from the signal lead (L2) on the input side. The signal is impedance matched by the thin metal wire (3) and the matching substrate (4) and transmitted to the semiconductor chip (2) via the 8 Fi signal 55 line (10).Then, for example, the amplified 9 microphone arL signal is transmitted to the semiconductor chip (2). Output side plan jI1
The impedance is matched between the 4 rope wires (3) and the multilayer board (5), and the output side signal lead (1) is passed through the 5 signal lines (ti).
3) It is transmitted to the outside. ◎Now, let's talk about the above semiconductor device.

Looking at the voltage, current, and human power impedance in the connection line (15) of the distribution line with line length t1 on the input side, the second problem is that the load impedance ZR is not connected to the receiving end, as shown in the equivalent circuit. The above six values at an arbitrary point jK going from the receiving end to the sending end can be concluded by the following general formula. In other words, ■! =Ma Hcosβ/+JRc Engineering Hsin/l
-(1) In addition, Rc:
The characteristic resistance of the line tVR' is the voltage at the receiving end, R is the current at the receiving end, λ is the wavelength, and β is the phase constant of the N path.

Here, since the receiving end is short-circuited, s ZR'' s and vR=o, and when these are substituted into the above equation (3).

Zl= JRctanβt
-(5) is obtained. Then, by substituting the arbitrary point l=λ/41 into the above equation (lbar2)(4J (5)), the results shown in the following table are obtained.

Table 1 In other words, from the above table, at the point l = λ/4, the input impedance Z/ becomes infinite (theoretically), and the apparent tortoise pressure V
/=A state in which only RO is applied is obtained.

Therefore, in the above-mentioned embodiment, as shown in FIG. 3, the connection line (15a) connected to the signal line (10) has a line length 11 of λ/4 and a high If it is formed in an impedance line, the same state as above can be obtained. Therefore, at the connecting part between the borrowed line (10) and the connected iP & protection line (15a), the termination is open in terms of high frequency, and the above borrowed line (10) kC Okel"
It has no effect on microwave impedance.

Next, on the output side, the connection line Wz (17a)ti connected to the borrowed line (11) is considered to be the same as on the input side, and the line length 12 is a high impedance line of λ/4. formed and constituted,
It operates in the same way as above.

The connecting lines (15a) and (17a) have line lengths of (2n+1)·λ/4. (n = integer of 1, 2...)
It has the same effect as above.

In this way, the communication lines (15) having predetermined characteristics are formed on the line substrates (8) (9) on which the nine signal lines (10) (11) are formed.
a) Power line with (17a) - (15) (17
), both of them are installed in a nine-piece device, so just by connecting them directly to the external circuit or #i equipment A, they can be powered and operated without affecting the ultra-high frequency side, and the above signals can be operated. Lines (10) (11) and the power line (15) (1)
7) can be formed at the same time and with high precision, resulting in a highly reliable product. Please note that the above semiconductor device has the above-mentioned capacity inside it without increasing its dimensions.
Since the upper Etin source 1fl path (15) (17) is formed, there is no need for a long line for external power supply, and it is expected that the device in which the above semiconductor device is mounted can be miniaturized. .

By the way, as an example of the above and other f<k, as shown in FIG. 4, which is a perspective view of a carrier type semiconductor device, a matching n
(24) (25) and line i (26) (27) are formed together, totaling 1ii4J! If it is arranged on a temporary base (21) with good conductivity, which serves as a single body, the number of parts will be further reduced, making it easier to handle, etc.
With the extra space removed, the semiconductor device itself can be further converted into an RC model.

Note that in the description of the above embodiment, the semiconductor chip (2
) Although a gallium phosphorus field effect transistor is shown, a field effect transistor or a bipolar transistor using another compound semiconductor substrate such as indicium phosphorus may also be used.

In addition, the four-metal base (1) is not limited to a carrier type (without a cap) or a type with a camp, but may be any of them,
(upside amplifier or upside down).

Furthermore, power supply lines (15) and (17) are shown in which one each is formed on the same side for the nine signal lines (io) and (u) on both the input side and the output side, but this is not limited to this. Instead, they may be formed in a shape, number, position, etc. having the necessary zero position, and the same effect as described above can be obtained.

[Effects of the Invention] As described above, according to the present invention, the signal line 9 is connected to a high frequency semiconductor element and passes a high @ wave signal, and the power line is connected to a high frequency semiconductor element and passes a high @ wave signal, and a power line that supplies the high frequency half quadrilateral element-C power. and
Since both of these are connected via trace II & lines with predetermined characteristics, it is possible to supply power without affecting the transmission of high-frequency signals, making it possible to obtain a highly reliable semiconductor device that can be used for previous production. .

[Brief explanation of drawings]

Figure 4s1 is a partially broken diagram showing one embodiment of this invention; the second cause is an explanatory diagram of an equivalent circuit of the connection line shown in Figure 1; Figure 3 is an equivalent circuit diagram of the one shown in Figure 1. Figure 4 is a perspective view showing another embodiment of the present invention, Figure 5 is a partially cutaway diagram showing a conventional semiconductor device, and Figure 6 is an equivalent circuit diagram of the one shown in Figure 5. . (2) is a semiconductor chip, (3) is a thin metal wire, (4) and (5) is a matching substrate on the Fi input side and output side. (8) and (9) R1 input and output side track boards, (10) and (11) are input and output side signal lines, (15) and (17) are input and output side power supply lines. , (15a) and (17a) Fi input side and output side connection line, (22) and (23)
if input side and output side boards, (U) and (25)
are input and output matching parts, (26) ν and (27
) This is the line section on the r1 input side and output side. Note that the same reference numerals 5j in FIG. 1 indicate the same or equivalent parts.

Claims (1)

[Scope of Claims] (1) A high-frequency semiconductor element, a signal line that connects the high-frequency semiconductor element and an external circuit and serves as a path for high-frequency signals, and a signal line that is connected to the signal line and blocks high-frequency components; A semiconductor device comprising: a connecting line of a predetermined length through which power source power passes; and a power line supplying power to the high frequency semiconductor element via the connecting line. (2) The connecting line is (2n+1)× in the high frequency region
Wavelength/4 (however, n = integer of 0, 1, 2,...)
A semiconductor device according to claim 1, characterized in that: (3) What are signal lines, communication lines, and power lines?
3. The semiconductor device according to claim 1, wherein the semiconductor device is formed on the same insulating substrate. (4) A claim characterized in that the matching circuit, signal line, communication line, and power supply line included in the high-frequency semiconductor element and connected to the signal line are formed on the same insulating substrate. The semiconductor device according to item 1 or 2.