JPS63297554A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPS63297554A JPS63297554A JP13387587A JP13387587A JPS63297554A JP S63297554 A JPS63297554 A JP S63297554A JP 13387587 A JP13387587 A JP 13387587A JP 13387587 A JP13387587 A JP 13387587A JP S63297554 A JPS63297554 A JP S63297554A
- Authority
- JP
- Japan
- Prior art keywords
- target
- mounting plate
- thin film
- target material
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000013077 target material Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 7
- 230000002093 peripheral effect Effects 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005289 physical deposition Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、スパッタリング現象を用いて被着物である基
板上へ金属や絶縁物などの薄膜を形成する方法に関する
。一般に薄膜形成方法には物理的堆積法（ＰＶＤ法）と
、化学的堆積法（ｃｖｎ法）、スプレー法などが使われ
ているが、中でもスパッタ法は物理的堆積法の１つであ
り、近年広く利用されている技術である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of forming a thin film of metal, insulator, etc. on a substrate as a deposit by using a sputtering phenomenon. In general, physical deposition methods (PVD method), chemical deposition methods (CVN method), and spray methods are used to form thin films, but sputtering is one of the physical deposition methods, and in recent years This is a widely used technology.
こうしたスパッタ法では、スパッタしたい原材料を電極
として周辺電極との間に高電圧を印加し、イオン化され
た不活性ガス（例えばＡｒガス）により、原材料をたた
き出し、原材料に対向している基板（例えばガラス基板
や８１基板）へ薄膜を堆積させる方法である。こうした
スパッタ装置の主要部の構造を第１図に示したが、従来
の技術を次に述べる。すなわち第１図で示すように、原
材料であるターゲット材１をターゲット取付板３にボン
ディングしであるのが一般的であるが、ターゲット材１
とターゲット取付板３の大きさは、両者が同じ場合、あ
るいはターゲット材１がターゲット取付板３より小さい
ことが一般的である。In this sputtering method, a high voltage is applied between the raw material to be sputtered as an electrode and a peripheral electrode, the raw material is struck out using an ionized inert gas (e.g. Ar gas), and a substrate facing the raw material (e.g. glass This is a method of depositing a thin film onto a substrate (such as a substrate or an 81 substrate). The structure of the main part of such a sputtering apparatus is shown in FIG. 1, and the conventional technology will be described below. That is, as shown in FIG. 1, it is common to bond target material 1, which is a raw material, to target mounting plate 3.
Generally, the sizes of the target mounting plate 3 and the target mounting plate 3 are the same, or the target material 1 is smaller than the target mounting plate 3.
ところが、こうした構造では次のような問題点を実際上
持っている。すなわち、原材料であるターゲット材１が
イオン化された不活性ガス（Ａｒイオンなど）によりた
たき出される際、ターゲット材１のみを単にたたき出す
ことができれば、原材料と・同等の薄膜を得ることがで
きる。しかし、イオン化された不活性ガスはターゲット
材１と周辺電極４とのスキ間にも容赦なく入り込み、タ
ーゲット材１とターゲット取付板３の境にあるボンディ
ング材２や、ターゲット取付板３の側面をたたき出すこ
とがある。この場合ターゲット材１のボンディング材２
は例えばインジウムなどが使われ、又、ターゲット取付
板３には銅やリン青銅などが多く使われているが、ター
ゲット材１と全く異なる金属を基板６へ付着させること
になり、基板６に作成しようとする薄膜の純度や組成を
損う結果となる。又第２図に示すようにターゲット材１
の側面に亀裂７が入ったり、ターゲット材そのものの大
きな割れとなり、使用不可となる問題を有している。However, this structure actually has the following problems. That is, when target material 1, which is a raw material, is beaten out by ionized inert gas (Ar ions, etc.), if only target material 1 can be simply beaten out, a thin film equivalent to the raw material can be obtained. However, the ionized inert gas relentlessly enters the gap between the target material 1 and the peripheral electrode 4, and the bonding material 2 at the boundary between the target material 1 and the target mounting plate 3 and the side surface of the target mounting plate 3 are damaged. Sometimes it comes out. In this case, bonding material 2 of target material 1
For example, indium is used for the target mounting plate 3, and copper or phosphor bronze is often used for the target mounting plate 3, but since a metal completely different from the target material 1 is attached to the substrate 6, This results in a loss of purity and composition of the intended thin film. In addition, as shown in Fig. 2, the target material 1
The problem is that cracks 7 may appear on the side surfaces of the target material, or large cracks may occur in the target material itself, making it unusable.
本発明はスパッタ法に伴うこうした問題点を取シ除くた
めのもので、ターゲット材１の外形寸法をターゲット取
付板３の外形より若干大きくとることを特徴としている
。The present invention is intended to eliminate these problems associated with the sputtering method, and is characterized in that the external dimensions of the target material 1 are slightly larger than the external dimensions of the target mounting plate 3.
本発明の上記の構成により、ターゲット材１の外形寸法
をターゲット取付板２より大きくとることで、ターゲッ
ト材１と周辺電極４とのスキ間に入り込んだ不活性ガス
イオンがボンディング材２又はターゲット取付板３をた
たいても、被着物である基板６には到達しない、従って
、従来技術ではボンディング材２又はターゲット取付板
３がスパッタされることにより生ずる基板６上の薄膜の
純度不良ないし組成不良を、防止することができる。According to the above structure of the present invention, by making the outer dimensions of the target material 1 larger than the target mounting plate 2, inert gas ions that have entered the gap between the target material 1 and the peripheral electrode 4 can be transferred to the bonding material 2 or the target mounting plate. Even if the plate 3 is struck, it does not reach the substrate 6, which is the adherend. Therefore, in the conventional technology, the thin film on the substrate 6 has poor purity or composition caused by sputtering of the bonding material 2 or the target mounting plate 3. can be prevented.
以下、図面に基づいて本発明の詳細な説明する第２図は
本発明の実施例である。原材料であるターゲット材１は
ボンディング材２を介して、ターゲット取付板３に接着
され、絶縁物４を介して周辺電極５に固定されている。Hereinafter, the present invention will be explained in detail based on the drawings. FIG. 2 shows an embodiment of the present invention. A target material 1, which is a raw material, is adhered to a target mounting plate 3 via a bonding material 2, and is fixed to a peripheral electrode 5 via an insulator 4.
ターゲット取付板３と周辺電極５との間に、高周波電源
６又は直流電源６により高電圧印加することで、ターゲ
ット材１４辺の不活性ガス（例えばＡｒガス）をイオン
化し、ターゲット材１表面に衝突させ、原材料であるタ
ーゲット材１をたたき出す、たたき出されたターゲット
材１は、これと対向、位置に置かれた基板７上に付着し
、薄膜形成が行なわれる。この際、第２図＜ｂ＞に示す
如く、ターゲット材１の外形寸法を、ターゲット取付板
３との接着面において、若干（約１〜２ｍが適当）大き
くとることにより、ターゲット取付板３ないしボンディ
ング板２のスパッタを防止する効果及びスパッタされた
場合でも大きな遮蔽効果を有する。従って、基板６上に
形成される薄膜は、臘材料であるターゲット材１のみと
することができ、不活性ガスの他に反応性ガス（例えば
Ｏ３など）を入れた場合においても、原材料との混合材
料となり、不純物混入（ボンディング材２やターゲット
取付板３）を防止する効果をもつ。By applying a high voltage between the target mounting plate 3 and the peripheral electrode 5 using the high frequency power supply 6 or the DC power supply 6, the inert gas (for example, Ar gas) on the 14 sides of the target material is ionized, and the surface of the target material 1 is ionized. The targets are collided to knock out the target material 1, which is a raw material.The knocked out target material 1 adheres to a substrate 7 placed in a position opposite to the target material 1, thereby forming a thin film. At this time, as shown in FIG. 2<b>, by making the outer dimensions of the target material 1 slightly larger (approximately 1 to 2 m) at the adhesive surface with the target mounting plate 3, the target mounting plate 3 or It has an effect of preventing sputtering of the bonding plate 2 and a great shielding effect even when sputtering occurs. Therefore, the thin film formed on the substrate 6 can be made of only the target material 1, which is a solid material. It becomes a mixed material and has the effect of preventing impurities from being mixed in (bonding material 2 and target mounting plate 3).
第３図（α）（ｂ）は、本発明の実施例の見取図である
０本発明で述べるターゲット材１．ボンディング材２．
およびターゲット取付板３の材質あるいは形状のいかん
に問わず、上記で述べた効果をもつことは明らかであり
、それらの材質、形状、数量に限定されるものでないこ
とは言うまでもない。FIG. 3(α)(b) is a sketch of an embodiment of the present invention.0 Target material described in the present invention1. Bonding material 2.
It is clear that the above-mentioned effects can be obtained regardless of the material or shape of the target mounting plate 3, and it goes without saying that the present invention is not limited to these materials, shapes, and quantities.
第１図（α）は従来のスパッタ装置の主要部断面構成図
、第１図（ｂ）は従来のターゲット電極の側面図、第２
図（α）は本発明によるスパッタ装置の主要部断面構成
図、第２図（ｂ）は本発明によるターゲット電極の側面
図、第３図（ａ）＃（ｂ）は本発明によるターゲット電
極の見取シ図である。
１・・・・・・・・・ターゲット材
２・・・・・・・・・ボンディング材
３・・・・・・・・・ターゲット取付板４・・・・・・
・・・絶縁物
５・・・・・・・・・周辺電極
６・・・・・・・・・高周波電源または直流電源７・・
・・・・・・・基 板
８・・・・・・・・・亀 裂
以上
ａ［人 セイコーエプソン株式会社
％ｌ這α）
第１図（ｂ）Figure 1 (α) is a sectional view of the main parts of a conventional sputtering device, Figure 1 (b) is a side view of a conventional target electrode, and Figure 1 (b) is a side view of a conventional target electrode.
Figure (α) is a sectional configuration diagram of the main parts of the sputtering apparatus according to the present invention, Figure 2 (b) is a side view of the target electrode according to the present invention, and Figures 3 (a) and (b) are the cross-sectional diagrams of the target electrode according to the present invention. This is a sketch. 1...Target material 2...Bonding material 3...Target mounting plate 4...
... Insulator 5 ...... Peripheral electrode 6 ...... High frequency power supply or DC power supply 7 ...
......Crack or more a [Person Seiko Epson Corporation% l crawl α] Figure 1 (b)
Claims (1)
電源または高周波電源を用いて、原材料であるターゲッ
ト材周辺にガスプラズマを発生させて被着物に薄膜を形
成する方法において、原材料であるターゲット材外形寸
法がターゲット材取付板より大きいことを特徴とする薄
膜形成方法。In this method, an inert gas or a reactive gas is introduced into a reaction chamber, and a DC power source or a high-frequency power source is used to generate gas plasma around the target material, which is the raw material, to form a thin film on the adherend. A thin film forming method characterized in that the external dimensions of the material are larger than the target material mounting plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13387587A JPS63297554A (en) | 1987-05-29 | 1987-05-29 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13387587A JPS63297554A (en) | 1987-05-29 | 1987-05-29 | Formation of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63297554A true JPS63297554A (en) | 1988-12-05 |
Family
ID=15115116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13387587A Pending JPS63297554A (en) | 1987-05-29 | 1987-05-29 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63297554A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016157771A1 (en) * | 2015-03-31 | 2016-10-06 | 株式会社アルバック | Cathode assembly |
-
1987
- 1987-05-29 JP JP13387587A patent/JPS63297554A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016157771A1 (en) * | 2015-03-31 | 2016-10-06 | 株式会社アルバック | Cathode assembly |
| JPWO2016157771A1 (en) * | 2015-03-31 | 2017-07-06 | 株式会社アルバック | Cathode assembly |
| CN107109632A (en) * | 2015-03-31 | 2017-08-29 | 株式会社爱发科 | Cathode assembly |
| TWI622660B (en) * | 2015-03-31 | 2018-05-01 | Ulvac Inc | Cathode assembly |
| US10100399B2 (en) | 2015-03-31 | 2018-10-16 | Ulvac, Inc. | Cathode assembly |
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