JPS63294537A - Ec element which decrease leak current - Google Patents
Ec element which decrease leak currentInfo
- Publication number
- JPS63294537A JPS63294537A JP62130827A JP13082787A JPS63294537A JP S63294537 A JPS63294537 A JP S63294537A JP 62130827 A JP62130827 A JP 62130827A JP 13082787 A JP13082787 A JP 13082787A JP S63294537 A JPS63294537 A JP S63294537A
- Authority
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- Japan
- Prior art keywords
- layer
- electrode
- oxide layer
- lower electrode
- upper electrode
- Prior art date
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- Pending
Links
- 230000007423 decrease Effects 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000605 extraction Methods 0.000 claims description 17
- 238000003698 laser cutting Methods 0.000 claims description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 abstract description 17
- 229910000457 iridium oxide Inorganic materials 0.000 abstract description 17
- 150000002500 ions Chemical class 0.000 abstract description 14
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 8
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 6
- 238000005520 cutting process Methods 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 206010063836 Atrioventricular septal defect Diseases 0.000 description 28
- 238000001211 electron capture detection Methods 0.000 description 28
- 238000004040 coloring Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006854 SnOx Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- -1 hydroxy ions Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、エレクトロクロミック素子の改良に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to improvements in electrochromic devices.
以下、エレクトロクロミックをrEC。Below, electrochromic is rEC.
と略称し、EC素子をrECD、と略称する。The EC element is abbreviated as rECD.
電圧を印加すると可逆的に電解酸化または還元反応が起
こり可逆的に着色する現象をエレクトロクロミズムと言
う、このような現象を示すエレクトロクロミック(以下
、ECと略省する)物質を用いて、電圧操作により着消
色するEC素子(以下、ECDと略す)を作り、このE
CDを光量制御素子(例えば、防眩ミラー)や7セグメ
ントを利用した数字表示素子に利用しようとする試みは
、20年以上前から行われている0例えば、ガラス基板
の上に透明電極膜(陰極)、二酸化タングステン薄膜、
二酸化ケン素のような絶縁膜、電極膜(陽極)順次積層
してなるECD (特公昭52−46098参照)、力
(全固体型ECDとして知られている。このECDに電
圧を印加すると二酸化タングステン(WOs)ti膜が
青色に着色する。その後、このECDに逆の電圧を印加
すると、WO3薄膜の青色が消えて無色になる。この着
色・消色する機構は詳しくは解明されていないが、W0
、薄膜および絶縁膜(イオン導電層)中に含まれる少量
の水分がW Oxの着色・消色を支配していると理解さ
れている。着色の反応式は下記のように推定されている
。Electrochromism is a phenomenon in which a reversible electrolytic oxidation or reduction reaction occurs when a voltage is applied, resulting in reversible coloration.Electrochromic (hereinafter abbreviated as EC) substances that exhibit this phenomenon are used to perform voltage manipulation. We created an EC element (hereinafter abbreviated as ECD) that can be colored and decolored by
Attempts to use CDs as light control devices (e.g. anti-glare mirrors) and numeric display devices using 7 segments have been made for more than 20 years. cathode), tungsten dioxide thin film,
An ECD (see Japanese Patent Publication No. 52-46098), which is made by sequentially laminating an insulating film such as sulfur dioxide and an electrode film (anode), is known as an all-solid-state ECD. When a voltage is applied to this ECD, tungsten dioxide The (WOs)ti film is colored blue. After that, when a reverse voltage is applied to this ECD, the blue color of the WO3 thin film disappears and it becomes colorless. The mechanism of this coloring/discoloration has not been elucidated in detail, but W0
It is understood that a small amount of water contained in the thin film and insulating film (ion conductive layer) controls the coloring and decoloring of W Ox. The reaction formula for coloring is estimated as follows.
陰極側:
H,O→H” +0H−
WOs +nH” +n e−→HllWOx(無色透
明) (青色)陽極側:
OH−−1/2 Hz O+1/40x ↑+1/2
e−ところで、EC層を直接又は間接的に挟む一対の電
極層は、ECJiの着消色を外部に見せるために少なく
とも一方は透明でなければならない。特に透過型のEC
Dの場合には両方とも透明でなければならない、透明な
電極材料としては、現在のところS n Ox、 I
nz o、、ITO(SnowとIn80.との混合物
)、ZnOなどが知られているが、これらの材料は比較
的透明度が悪いために薄(せねばならず、この理由及び
そ他の理由からECDは基板例えばガラス板やプラスチ
ック板の上に形成するのが?通であり、このようなEC
Dの構造の一例を第3図に示す。Cathode side: H, O→H" +0H- WOs +nH" +ne e-→HllWOx (colorless and transparent) (blue) Anode side: OH--1/2 Hz O+1/40x ↑+1/2
e-By the way, at least one of the pair of electrode layers that directly or indirectly sandwich the EC layer must be transparent in order to show the coloring and fading of the ECJi to the outside. Especially transmission type EC
In the case of D, both must be transparent.Currently, transparent electrode materials include SnOx, I
Known materials include NZO, ITO (a mixture of Snow and In80), and ZnO, but these materials have relatively poor transparency and therefore have to be made thin (for this and other reasons). ECDs are commonly formed on a substrate such as a glass plate or a plastic plate;
An example of the structure of D is shown in FIG.
第3図に於いて、(A)は上部電極、(B)は下部透明
電極、(E)は還元着色性EC層(例えばWO2)、(
D)はイオン導電層、(C)は可逆的電解酸化層又は酸
化着色性EC層(例えば酸化又は水酸化イリジウム)を
それぞれ示し、基本的にはこの(A)〜(B)の積層構
造だけでECDが構成されるが、前述のとおり、これら
のECDは基板(S)上に形成される。In Figure 3, (A) is the upper electrode, (B) is the lower transparent electrode, (E) is the reduction coloring EC layer (for example, WO2), (
D) shows an ion conductive layer, and (C) shows a reversible electrolytic oxidation layer or an oxidation-colored EC layer (for example, iridium oxide or hydroxide), and basically only the laminated structure of (A) to (B) is used. As described above, these ECDs are formed on the substrate (S).
(R)はECDの封止材例えばエポキシ樹脂であり、(
G)は保護用の封止基板である。(R) is an ECD sealing material such as an epoxy resin;
G) is a protective sealing substrate.
ところで、従来のECDでは、基板上に第1FJとして
上部電極(A)の取出し部(F)と、それと隔てて下部
電極(B)及び下部電極に連続した下部電極の取出し部
(B、)を形成し、この上に、酸化イリジウム層(C)
、酸化タンタルi (D)及び酸化タングステン層(E
)を同一マスクで順に蒸着した。さらに上部電極(A)
としてANを別マスクで蒸着し、この時AI!、は既に
基板(S)上に形成された取出し電極形成部(F)と接
触するようにした。By the way, in a conventional ECD, a first FJ on the substrate includes an upper electrode (A) lead-out part (F), a lower electrode (B) separated from it, and a lower electrode lead-out part (B) continuous to the lower electrode. on which an iridium oxide layer (C) is formed.
, tantalum oxide i (D) and tungsten oxide layer (E
) were sequentially deposited using the same mask. Furthermore, the upper electrode (A)
Then, AN was deposited using a separate mask, and at this time, AI! , were brought into contact with the extraction electrode forming portion (F) already formed on the substrate (S).
また、前記第1層の形成は、従来、
(1)、一旦、基板表面の全体又はほぼ全体に電極層を
形成した後、フォトエツチングによりバターニングする
か、又は
(2)、電極層を直接マスク蒸着するかのいずれかの方
法によって行なわれていた。In addition, the formation of the first layer has conventionally been carried out by (1) once forming an electrode layer on the entire or almost the entire surface of the substrate and then patterning by photoetching, or (2) directly forming the electrode layer. This was done by either mask vapor deposition or mask vapor deposition.
従来の層構造に場合、EC3層(C)〜(E)を同一マ
スクにより形成しており、その後に蒸着するAl(A)
とEC3層の中では比較的低抵抗の酸化イリジウム層(
C)とが溝付近で接触し、(C)層を介して下部電極層
(B)とのリーク電流が増大する恐れがある(第3図参
照)。In the case of the conventional layer structure, the three EC layers (C) to (E) are formed using the same mask, and then the Al (A) layer is vapor-deposited.
Among the EC3 layers, the iridium oxide layer has a relatively low resistance (
C) comes into contact with the lower electrode layer (B) near the groove, and there is a possibility that leakage current between the lower electrode layer (B) and the lower electrode layer (B) through the layer (C) will increase (see FIG. 3).
また、前記第1層の形成方法に於いて、(1)の方法は
、フォトレジストの塗布→パターンの露光→現像による
フォトレジストのパターニング→エツチング→洗浄→乾
燥という複雑な工程を要し、そのため製造コストが高く
なり製造時間が長くなるという問題点があった。また、
上部電極(A)の取出し部(F)と下部電極(B)との
間の溝を細くしようとすると、精密なマスクパターンが
必要になるが、そのようなマスクパターンの作成は難し
く、従って、いきおい溝は太くならざるを得ないという
問題点があった。また、レジストむらができる、エツチ
ングむらができる、細い溝の場合に修正ができないなど
の問題点があった。In addition, in the method for forming the first layer, method (1) requires a complicated process of coating a photoresist → exposing a pattern → patterning the photoresist by developing → etching → cleaning → drying. There were problems in that the manufacturing cost was high and the manufacturing time was long. Also,
In order to narrow the groove between the lead-out part (F) of the upper electrode (A) and the lower electrode (B), a precise mask pattern is required, but it is difficult to create such a mask pattern, and therefore, The problem was that the grooves had to be thicker. Further, there were other problems such as resist unevenness, etching unevenness, and narrow grooves that could not be corrected.
一方、(2)の方法は、細い溝の形成が困難なばかりで
なく、溝の線が不揃いで美観が劣るという問題点があっ
た。On the other hand, method (2) has the problem that it is not only difficult to form narrow grooves, but also that the lines of the grooves are irregular and the appearance is poor.
〔問題点を解決するための手段〕
そのため、本発明は、溝付近で上部電極(A)と下部電
極(B)とが酸化イリジウムII(C)を介して接触す
るのを防止するため、溝付近で上部電極(A)と酸化イ
リジウム層(C)との間に酸化タンタル層−イオン導電
N (D)及び/又は酸化タングステン層=還元着色性
EC層(E)が介在する構造とした。[Means for Solving the Problems] Therefore, the present invention provides a method for preventing the upper electrode (A) and the lower electrode (B) from coming into contact with each other in the vicinity of the groove through the iridium II oxide (C). A structure was adopted in which a tantalum oxide layer - ion conductive N (D) and/or a tungsten oxide layer = reduction coloring EC layer (E) were interposed between the upper electrode (A) and the iridium oxide layer (C) in the vicinity.
本発明の構造0ECDを製造するには、例えば次のよう
にする。基板表面の全体に電極層を形成し、次に酸化イ
リジウム層(C)を形成し、その後、レーザーその他の
カッティング手段により2層重ねてのカッティングによ
り溝形成を行い、これにより上部電極(A)の取出し部
(F)と下部電極部(B)及び下部電極に連続した下部
電極の取出し部(B1)を形成し、その後、別マスクに
て酸化タンタル層(D)及び酸化タングステン層(E)
を形成する。For example, the structure 0ECD of the present invention can be manufactured as follows. An electrode layer is formed on the entire surface of the substrate, then an iridium oxide layer (C) is formed, and then grooves are formed by cutting the two layers together using a laser or other cutting means, thereby forming an upper electrode (A). Form the extraction part (F), the lower electrode part (B), and the extraction part (B1) of the lower electrode that is continuous with the lower electrode, and then use a separate mask to form the tantalum oxide layer (D) and the tungsten oxide layer (E).
form.
この場合、層(D)及び(E)の材料が、下部電極(B
)及び酸化イリジウム層(C)の溝に面している(溝に
露出している)端面を被覆するようにする。一般には、
マスク蒸着する際のマスクの開口部の溝側の端を外方向
にずらして、開口部を広げるだけでよい。In this case, the material of the layers (D) and (E) is the lower electrode (B
) and the end faces of the iridium oxide layer (C) facing the grooves (exposed to the grooves) are coated. In general,
It is only necessary to widen the opening by shifting the groove-side end of the opening of the mask outward when performing mask vapor deposition.
次に上部電極(A)としてAlを(F゛)の上の(C)
層の一部と接触するように形成する。Next, as the upper electrode (A), Al was placed on (C) above (F゛).
formed in contact with a portion of the layer.
このような構造にすると、上部電極(A)と酸化イリジ
ウム層(C)とが接触しないので下部電極711 (B
)とのリーク電流が増大することはない。With this structure, the upper electrode (A) and the iridium oxide layer (C) do not come into contact with each other, so the lower electrode 711 (B
) will not increase the leakage current.
また上部電極(A)の取出し部(F)と下部電極部(B
)との間のブランク(溝)の幅は0.1閣以下にするこ
とが好ましい、これにより下部電極部(B)を取出し部
(F)側に近づけることができ、それだけ表示部の面積
を大きくすることができる。尚、余り狭くすると両者の
間で短絡する恐れがあるので30um以上の幅にするこ
とが好ましい。Also, the extraction part (F) of the upper electrode (A) and the lower electrode part (B)
It is preferable that the width of the blank (groove) between the Can be made larger. Note that if the width is too narrow, there is a risk of a short circuit between the two, so it is preferable to make the width 30 um or more.
また、電極の取出しは、基板端面に外部配線(LA)、
(Ll)を接合するか、又は、予め外部配線(LA)、
(L、)を接合しである導電性クリップ(H)の装着に
より行なう、尚、基板端面に外部配線を接合する場合は
、ITO蒸着時に廻り込みを利用して基板端面までIT
OJiを形成しておく必要がある。In addition, to take out the electrode, use external wiring (LA) on the end surface of the board.
(Ll) or external wiring (LA) in advance,
(L,) is bonded by attaching a conductive clip (H). If external wiring is to be bonded to the edge of the board, use the wraparound during ITO evaporation to connect the IT to the edge of the board.
It is necessary to form OJi.
導電性クリップは、バネ性を有する金属でできているこ
とが好ましく、また金属はハンダ付けも良好に実施でき
るので好ましい、好ましいバネ性を有する金属としては
、リン青銅が挙げられるが、その外ハガネなども使用さ
れる。金属クリップは、少なくとも取出し部との接触面
に、比較的軟らかい金属例えばスズ、インジウム、ハン
ダ、それらの混合物、その他の導電性材料で被覆されて
いてもよい、そのようなりリップは、取出し部との接触
が最高となろう、なぜならば、一般には金属表面は顕微
鏡で見た場合微妙な凹凸があり、単に圧接しただけでは
取出し部との良好な接触が最高とはならないからである
。またリン青銅のクリップにスズめっきすると、耐蝕性
が向上する利点もある。The conductive clip is preferably made of a metal that has spring properties, and metals are also preferred because they allow good soldering. Preferred metals that have spring properties include phosphor bronze; etc. are also used. The metal clip may be coated with a relatively soft metal, such as tin, indium, solder, a mixture thereof, or other conductive material, at least on the surface in contact with the extraction part; This is because the metal surface generally has subtle irregularities when viewed under a microscope, and mere pressure contact will not provide the best contact with the extraction part. Furthermore, tin plating on phosphor bronze clips has the advantage of improving corrosion resistance.
またクリップは、取出し部を基板に対し常に押さえつけ
ているので、仮に温水浸漬試験に供しても取出し部が基
板から剥がれる危険もない、ただ、クリップを取りつけ
るときに、取出し部を破損する恐れがあるので、取出し
部はそれ自身強靭なIToその他の酸化物系電極材料で
できていることが好ましい、もっとも、取り付は作業に
細心の注意を払えば、破損の恐れは解消される。Also, since the clip always presses the extraction part against the board, there is no risk of the extraction part coming off from the board even if it is subjected to a hot water immersion test. However, there is a risk of damaging the extraction part when attaching the clip. Therefore, it is preferable that the take-out part itself be made of a strong ITo or other oxide-based electrode material. However, if the attachment is done with great care, the risk of damage can be eliminated.
導電性クリップは、ECDの周辺部の遮蔽材又は装飾材
を兼用していてもよい、特に基板側からECDを見るこ
とになる防眩ミラー(反射光量が電気的にコントロール
もの)の場合には、なるべく表示部の面積を大きくして
周辺部を細くすることが美観上好ましいので、蓋用する
ことは有利である。The conductive clip may also serve as a shielding material or decorative material for the peripheral area of the ECD, especially in the case of an anti-glare mirror (the amount of reflected light is electrically controlled) where the ECD is viewed from the board side. Since it is aesthetically preferable to increase the area of the display part and make the peripheral part thinner, it is advantageous to use it as a lid.
クリップがハンダ付は可能な材料でできている場合には
、外部配線をクリップに接続するとき、ハンダ付けすれ
ばよいが、クリップが金属でできている場合には、ハン
ダ付けに変えて導電性接着剤、圧着又は圧締めにより接
続してもよい。If the clip is made of a material that can be soldered, you can just solder it when connecting external wiring to the clip, but if the clip is made of metal, use a conductive material instead of soldering. Connections may be made by adhesive, crimping or clamping.
外部配線のクリップへの接続時期は、持続がハンダ付け
の場合、ECDに取りつける前に行なうことが好ましい
、そうすれば、ECDがハンダ付けの熱を受けず、熱に
よる損傷の危険がなくなる。It is preferable to connect the external wiring to the clip, if the sustain is soldered, before attaching it to the ECD, so that the ECD is not exposed to the heat of soldering and there is no risk of damage due to heat.
外部配線とクリップとの接続部は、物理的、化学的に弱
いので、封止することが好ましい、この封止は、ECD
の封止と同時に行なうと、別の封止工程が不要になるの
で特に好ましい。The connection between the external wiring and the clip is physically and chemically weak, so it is preferable to seal it.
It is particularly preferable to carry out the sealing process simultaneously with the sealing process, since a separate sealing process is not required.
一方、本発明に於けるECDのMi層構造は、特にどれ
と限定されるものではないが、固体型ECDの構造とし
ては、例えば■電極Ji/EC層/イオン導電層/電極
層のような4層構造、■電極層/還元着色型EC層/イ
オン導電層/可逆的電解酸化層ないし酸化着色型ECC
層重電極層ような5層構造があげれらる。On the other hand, the Mi layer structure of the ECD in the present invention is not particularly limited, but the structure of the solid-state ECD includes, for example, ■ electrode Ji/EC layer/ion conductive layer/electrode layer. 4-layer structure, ■ Electrode layer / reduction colored EC layer / ion conductive layer / reversible electrolytic oxidation layer or oxidation colored ECC
A five-layer structure such as layered electrode layers can be mentioned.
透明電極の材料としては、例えばSnO□、In201
、ITOなどが使用される。このような電極層は、−S
には真空蒸着、イオンブレーティング、スパッタリング
などの真空薄膜形成技術で形成される。(還元着色性)
EC層としては一般にWO、、Mob、などが使用され
る。Examples of the material of the transparent electrode include SnO□, In201
, ITO, etc. are used. Such an electrode layer is -S
It is formed using vacuum thin film forming techniques such as vacuum evaporation, ion blating, and sputtering. (Reduction coloring property)
As the EC layer, WO, Mob, etc. are generally used.
イオン導電層としては、例えば酸化ケイ素、酸化タンタ
ル、酸化チタン、酸化アルミニウム、酸化ニオブ、酸化
ジルコニウム、酸化ハフニウム、酸化ランタン、フン化
マグネシウムなどが使用される。これらの物質薄膜は製
造方法により電子に対して絶縁体であるが、プロトン(
H゛)およびヒドロキシイオン(OH−)に対しては良
導体となる。E(4Jの着色消色反応にはカチオンが必
要とされ、H3イオンやLi3イオンをEC層その他に
含有させる必要がある。H゛イオン初めからイオンであ
る必要はなり、電圧が印加されたときにH9イオンが生
じればよく、従ってH°イオンの代わりに水を含有させ
てもよい。この水は非常に少なくて十分であり、しばし
ば、大気中から自然に侵入する水分でも着消色する。As the ion conductive layer, for example, silicon oxide, tantalum oxide, titanium oxide, aluminum oxide, niobium oxide, zirconium oxide, hafnium oxide, lanthanum oxide, magnesium fluoride, etc. are used. Due to the manufacturing method, these thin films of materials are insulators for electrons, but they are insulators for protons (
It is a good conductor for H') and hydroxy ions (OH-). Cations are required for the coloring and decoloring reaction of E (4J), and it is necessary to contain H3 ions and Li3 ions in the EC layer and other parts. It is sufficient that H9 ions are generated in the process, and therefore water may be included in place of H° ions.A very small amount of this water is sufficient, and often even moisture that naturally enters from the atmosphere will discolor and discolor. .
EC層とイオン導電層とは、どちらを上にしても下にし
てもよい。さらにEC層に対して間にイオン環を層を挟
んで可逆的電解酸化層(ないし酸化着色型EC層)又は
触媒層を配設してもよい。The EC layer and the ion conductive layer may be placed either side up or down. Furthermore, a reversible electrolytic oxidation layer (or oxidation-colored EC layer) or a catalyst layer may be provided with an ion ring interposed between the EC layer and the EC layer.
このような層としては、例えば酸化ないし水酸化イリジ
ウム、同じくニッケル、同しくクロム、同じくバナジウ
ム、同じくルテニウム、同じくロジウムなどがあげられ
る。これらの物質は、イオン導電層又は透明電極中に分
散されていても良いし、それらを分散していてもよい。Such layers include, for example, iridium oxide or hydroxide, nickel, chromium, vanadium, ruthenium, rhodium, and the like. These substances may be dispersed in the ion conductive layer or the transparent electrode, or may be dispersed therein.
不透明な電極層は、反射層と兼用していてもよく、例え
ば金、銀、アルミニム、クロム、スズ、亜鉛、ニッケル
、ルテニウム、ロジウム、ステンレスなどの金属が使用
される。The opaque electrode layer may also serve as a reflective layer, and for example, metals such as gold, silver, aluminum, chromium, tin, zinc, nickel, ruthenium, rhodium, and stainless steel are used.
第1図は本実施例のECDの断面図である。 FIG. 1 is a sectional view of the ECD of this embodiment.
(1)、ガラス基板(S)上にITO膜を形成し、次に
酸化スズを含む酸化イリジウム層(C)をガラス基板周
辺端よりやや内側に形成する。次に照射位置における光
束直径が1〜1000μmのYAGレーザ−(波長1.
064 μm;QスイッチlKH2:パワー100=1
000mW)を照射しながら、スキャン速度1〜50m
ff1/秒でこれを移動させることにより、上部電極の
取出し部(F)と下部電極部(B)との間の溝を形成し
た。(1) An ITO film is formed on a glass substrate (S), and then an iridium oxide layer (C) containing tin oxide is formed slightly inside the peripheral edge of the glass substrate. Next, a YAG laser (wavelength 1.
064 μm; Q switch lKH2: power 100=1
000 mW) while scanning at a scanning speed of 1 to 50 m.
By moving this at a rate of ff1/sec, a groove was formed between the upper electrode lead-out part (F) and the lower electrode part (B).
(2)8次に酸化タンタルJi (D)及び酸化タング
ステン層(E)を酸化イリジウム層(C)及び下部電極
(B)の溝に面している端面部分を覆うように順に形成
した。(2) 8th Next, tantalum oxide Ji (D) and tungsten oxide layer (E) were sequentially formed to cover the iridium oxide layer (C) and the end face portion facing the groove of the lower electrode (B).
(3)、その上に上部電極(A)としてANを上部電極
の取出し部(F)上の(C)層の残り(C1)と接触す
るように形成した。(C,)層は比較的抵抗が低いので
、(A)と(F)との間に(c+)FJが介在していて
も(A)−(F)の導通はとれる。(3) AN was formed thereon as the upper electrode (A) so as to be in contact with the remainder (C1) of the layer (C) on the lead-out portion (F) of the upper electrode. Since the (C,) layer has a relatively low resistance, conduction between (A) and (F) can be maintained even if (c+) FJ is interposed between (A) and (F).
(4)1次にガラス基板(S)端面部(ITOが廻り込
んでいるところ)の上部電極取出し部側及び下部電極取
出し側にそれ・ぞれ外部配線(LA )、(Le)をボ
ンディングした。(4) First, external wiring (LA) and (Le) were bonded to the upper electrode extraction side and the lower electrode extraction side of the end face of the glass substrate (S) (where ITO goes around), respectively. .
(5)、最後にエポキシ樹脂封止剤(R)で素子を封止
すると共に、封止基板(G)を接着して封止を完了し本
実施例のECDを製作した。(5) Finally, the element was sealed with an epoxy resin sealant (R), and the sealing substrate (G) was adhered to complete the sealing, and the ECD of this example was manufactured.
このECDに駆動電源(Su)から着色電圧(+1.3
5V)を印加すると、基板(S)から入射させた波長6
33nmの光(L)に対して反射率が15%に減少しく
10秒後)、この反射率は電圧印加を止めても、しばら
く保たれた。今度は消色電圧(−1,35V)を印加す
ると、同じく反射率は65%に回復した(10秒後)。Coloring voltage (+1.3
5V), the wavelength 6 incident from the substrate (S)
The reflectance decreased to 15% for 33 nm light (L) after 10 seconds), and this reflectance was maintained for a while even after the voltage application was stopped. When a decoloring voltage (-1.35 V) was applied this time, the reflectance recovered to 65% (after 10 seconds).
従って、本実施例のECDは自動車そ他の防眩ミラーと
して有用で、後ろから接近する自動車の強いライトがミ
ラーに当たった時、電圧を印加して反射率を落とせば、
ドライバーは眩しくなくな(実施例2〕
第2図は本実施例のECDの断面図である。Therefore, the ECD of this embodiment is useful as an anti-glare mirror for automobiles and other vehicles, and when a strong light from a car approaching from behind hits the mirror, applying a voltage will reduce the reflectance.
The driver is no longer dazzling (Example 2) FIG. 2 is a sectional view of the ECD of this example.
(1)、ガラス基板(S)上にITO膜を形成し、次に
酸化スズを含む酸化イリジウム層(C)をガラス基板周
辺端よりやや内側に形成する0次に照射位置における光
束直径が1〜1000μ■のYAGレーザ−(波長1.
064 、us;QスイッチIKII2 :パワー10
0〜100100Oを照射しながらスキャン速度1〜5
0−7秒でこれを移動させることにより上部電極の取出
し部(F)と下部電極部(B)との間の溝を形成した。(1) An ITO film is formed on the glass substrate (S), and then an iridium oxide layer (C) containing tin oxide is formed slightly inside the peripheral edge of the glass substrate.The luminous flux diameter at the zero-order irradiation position is 1 ~1000μ■ YAG laser (wavelength 1.
064, us; Q switch IKII2: power 10
Scan speed 1-5 while irradiating 0-100100O
By moving this for 0-7 seconds, a groove was formed between the upper electrode lead-out part (F) and the lower electrode part (B).
(2)0次に酸化タンタル層(D)及び酸化タングステ
ン層(E)を酸化イリジウム層(C)及び下部電極(B
)の溝に面する端面を覆うように順に形成した。(2) Next, the tantalum oxide layer (D) and the tungsten oxide layer (E) are connected to the iridium oxide layer (C) and the lower electrode (B).
) were formed in order so as to cover the end faces facing the grooves.
(3)、その上に上部電極(A)としてAlを上部電極
の取出し部(F)上の(C)層の残り(C1)と接触す
るように形成した。(3) Al was formed thereon as an upper electrode (A) so as to be in contact with the remainder (C1) of the layer (C) on the lead-out portion (F) of the upper electrode.
(4)、予め、ハンダ、導電性接着剤又は圧着、圧締め
により外部配線(La )、(Lm )を接続しである
リン青銅クリップ(H)を下部電極の取出し部(Fo)
と下部電極の取出し部(B、) に装着する。(4) In advance, connect the external wiring (La) and (Lm) with solder, conductive adhesive, crimping, or clamping, and attach the phosphor bronze clip (H) to the lower electrode extraction part (Fo).
and the lower electrode outlet (B,).
(5)、最後にエポキシ樹脂封止剤(R)で素子を封止
すると共に、封止基板(G)を接着して封止を完了し、
本実施例のECDを製作した。(5) Finally, seal the element with an epoxy resin sealant (R) and adhere the sealing substrate (G) to complete the sealing,
An ECD of this example was manufactured.
このECDに、駆動電源(So)から着色電圧(+1.
35V)を印加すると、基板(S)から入射させた波長
633n−の光(L)に対して、反射率が15%に減少
しく10秒後)、この反射率は電圧印加を止めてもしば
ら(保たれた。今度は、消色電圧(−1,35V)を印
加すると、同じく反射率は65%に回復した(10秒後
)。A coloring voltage (+1.
When a voltage of 35V) is applied, the reflectance decreases to 15% for light (L) with a wavelength of 633n− incident from the substrate (S) (after 10 seconds), and this reflectance remains for a while even after the voltage application is stopped. (It was maintained. This time, when a decoloring voltage (-1.35 V) was applied, the reflectance similarly recovered to 65% (after 10 seconds).
従って、本実施例のECDは、自動車その他の防眩ミラ
ーとして有用で、後ろから接近する自動車の強いライト
がミラーに当たったとき、電圧を印加して反射率を落と
せば、ドライバーは眩しくなくなる。Therefore, the ECD of this embodiment is useful as an anti-glare mirror for automobiles and other vehicles, and when a strong light from a car approaching from behind hits the mirror, the driver will not be dazzled by applying a voltage to reduce the reflectance.
以上のとおり、本発明によれば、ECDの上部電極と下
部電極が確実に分断された層構造にしであるので短絡す
る恐れがなくなり、リーク電流を低減することができる
。As described above, according to the present invention, since the upper electrode and the lower electrode of the ECD have a layered structure in which they are reliably separated, there is no risk of short circuit, and leakage current can be reduced.
また、レーザーカッティングによりパターニングするの
で、フォトエツチングによるパターニングに比ベニ程が
簡単でECDの製造コストが安く済む、また、容易に細
い溝を形成することができるので、表示部を大きくとる
ことが可能になる。In addition, since patterning is done by laser cutting, it is much simpler than patterning by photo-etching, and the manufacturing cost of the ECD is low.Furthermore, thin grooves can be easily formed, so the display area can be made larger. become.
従って、本発明の方法で製造した電極を使用して、実施
してECDを作成し、このECDを例えば光量が変えら
れる防眩ミラーに使用すれば、表示部の周辺部が相対的
に小さくなって美観が優れることになる。Therefore, if an ECD is created using the electrodes manufactured by the method of the present invention and this ECD is used, for example, in an anti-glare mirror that can change the amount of light, the peripheral area of the display part can be made relatively small. This results in an excellent aesthetic appearance.
第1図は、本発明の実施例1にかかるECDの概略断面
図である。
第2図は、本発明の実施例2にかかるECDの概略断面
図である。
第3図は、従来のECDにかかる概略断面図である。
〔主要部分の符号の説明〕
A・・・上部電極
B・・・下部電極
B、・・・下部電極の取出し部
E・・・還元着色性ECI!!l又はWOs層F・・・
上部電極の取出し部
H・・・導電性クリップ
L^、L婁・・・外部配線
C・・・酸化着色性EC層又は酸化イリジウム層CI・
・・0層の残りFIG. 1 is a schematic cross-sectional view of an ECD according to Example 1 of the present invention. FIG. 2 is a schematic cross-sectional view of an ECD according to Example 2 of the present invention. FIG. 3 is a schematic cross-sectional view of a conventional ECD. [Explanation of symbols of main parts] A... Upper electrode B... Lower electrode B,... Lower electrode extraction part E... Reduction coloring ECI! ! l or WOs layer F...
Upper electrode lead-out portion H...Conductive clip L^, L-layer...External wiring C...Oxidation colored EC layer or iridium oxide layer CI.
・Remains of 0 layer
Claims (2)
電極及び下部電極に連続した下部電極の電極取出し部が
形成された基板の上に、少なくともエレクトロクロミッ
ク層及び上部電極を積層してなるエレクトロクロミック
素子に於いて、上部電極層と下部電極層が短絡しにくい
層構造にして、リーク電流を低減させたことを特徴とす
るエレクトロクロミック素子。(1) At least an electrochromic layer and an upper electrode are laminated on a substrate on which an electrode extraction portion of the upper electrode is formed, and a lower electrode and an electrode extraction portion of the lower electrode continuous to the lower electrode are formed separated from the electrode extraction portion of the upper electrode. An electrochromic device characterized in that an upper electrode layer and a lower electrode layer have a layered structure that prevents short-circuiting, thereby reducing leakage current.
ーザーカッティングにより行なったことを特徴とする特
許請求の範囲第1項記載のエレクトロクロミック素子。(2) The electrochromic device according to claim 1, wherein the electrode extraction portion of the upper electrode and the lower electrode are separated by laser cutting.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62130827A JPS63294537A (en) | 1987-05-27 | 1987-05-27 | Ec element which decrease leak current |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62130827A JPS63294537A (en) | 1987-05-27 | 1987-05-27 | Ec element which decrease leak current |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63294537A true JPS63294537A (en) | 1988-12-01 |
Family
ID=15043632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62130827A Pending JPS63294537A (en) | 1987-05-27 | 1987-05-27 | Ec element which decrease leak current |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63294537A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005527858A (en) * | 2002-05-27 | 2005-09-15 | ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク | Laser structuring of electro-optic systems |
-
1987
- 1987-05-27 JP JP62130827A patent/JPS63294537A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005527858A (en) * | 2002-05-27 | 2005-09-15 | ライプニッツ−インスティトゥート フィア ノイエ マテリアーリエン ゲマインニュッツィゲ ゲゼルシャフト ミット ベシュレンクタ ハフトゥンク | Laser structuring of electro-optic systems |
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