JPS63293936A - Electron beam testing method and electron beam tester - Google Patents
Electron beam testing method and electron beam testerInfo
- Publication number
- JPS63293936A JPS63293936A JP62128274A JP12827487A JPS63293936A JP S63293936 A JPS63293936 A JP S63293936A JP 62128274 A JP62128274 A JP 62128274A JP 12827487 A JP12827487 A JP 12827487A JP S63293936 A JPS63293936 A JP S63293936A
- Authority
- JP
- Japan
- Prior art keywords
- bias
- electron beam
- cutting
- potential contrast
- bias application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 33
- 238000012360 testing method Methods 0.000 title description 9
- 238000010998 test method Methods 0.000 claims 3
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003313 weakening effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＬＳＩ等の半導体素子（チップ）を走査型電
子顕微鏡下で動作させ、動作波形や電位コントラスト（
電位コントラスト像）を検出する電子ビームテスト技術
に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention operates a semiconductor element (chip) such as an LSI under a scanning electron microscope, and detects the operating waveform and potential contrast (
This invention relates to electron beam test technology for detecting potential contrast images.
ＩＣ（集積回路袋り、ＬＳＩ（大規模集積回路）等の半
導体素子（チップ）における微細配線（電極）部分の動
作解析や評価を、表面が絶縁膜で被われたチップの状態
で行う！！ａ置として、電子ビームテスター（ＥＢテス
ター）が知られている。We analyze and evaluate the operation of fine wiring (electrodes) in semiconductor devices (chips) such as ICs (integrated circuits) and LSIs (large-scale integrated circuits) using chips whose surfaces are covered with an insulating film!! An electron beam tester (EB tester) is known as an EB tester.
電子ビームテスターは、走査型電子顕微鏡（ＳＥＭ）の
試料室において、パッシベーション膜（絶縁膜）で表面
が被われたチップを電圧（バイアス）の印加（ＯＮ）に
よって動作させるとともに、チップの配線（電極）部分
に電子ビームを照射させて、動作波形や電位コントラス
ト像（ＳＥＭ像）を得るものである。An electron beam tester operates a chip whose surface is covered with a passivation film (insulating film) in the sample chamber of a scanning electron microscope (SEM) by applying a voltage (bias) (ON). ) is irradiated with an electron beam to obtain operating waveforms and potential contrast images (SEM images).
従来の電子ビームテスターは、たとえば、第１６回日科
技連信頬性・保全生シンポジウム発表報文集５ｅｓｓ、
６ ９ ｒＥＢテスターによる絶縁膜上の電位コントラ
ストの観察」、昭和６１年５月２８日発行Ｐ２３１〜Ｐ
２３６に記載されている。この文献では、表面を絶縁膜
（パッシベーション膜）に被われたＬＳＩチップの動作
時の電橋電位分布を観測する例が示されている。Conventional electron beam testers include, for example, the 16th Japan Federation of Science and Technology Symposium, 5ess,
6 9 “Observation of potential contrast on insulating film using rEB tester”, published May 28, 1988, P231-P
236. This document describes an example of observing the electric bridge potential distribution during operation of an LSI chip whose surface is covered with an insulating film (passivation film).
また、従来の電子ビームテスターにあっては、チップへ
のバイアス印加・切断（ＯＦＦ）の周期を数秒以内とし
て電位コントラスト像等のデータを得ている。Further, in the conventional electron beam tester, data such as a potential contrast image is obtained by applying a bias to the chip and cutting it off (OFF) at a cycle of several seconds or less.
〔発明が解決しようとする問題点〕
絶縁膜下のチップの配線電位を電子ビームテスターで測
定する場合、前記文献にも記載されているように、電子
ビームの照射によって絶縁膜が帯電（チャージアップ）
し、電位コントラストが消失するため、ＳＥＭ像におい
て正確な配線電位が測定出来なくなってしまう。[Problems to be Solved by the Invention] When measuring the wiring potential of a chip under an insulating film with an electron beam tester, as described in the above-mentioned document, the insulating film is charged (charge-up) due to electron beam irradiation. )
However, since the potential contrast disappears, accurate wiring potential cannot be measured in the SEM image.
一方、チップ表面の絶縁膜を除去して測定を行えば、明
瞭な電位コントラストが得られるため、正確な電位が測
定できるが、この絶縁膜を除去する作業は手間と労力が
かかるばかりでな（、ＩＣを壊してしまうこともあり、
不良解析時等の大きな障害になっていた。On the other hand, if measurements are performed after removing the insulating film on the chip surface, a clear potential contrast can be obtained and accurate potential can be measured, but removing this insulating film is time consuming and labor intensive. , it may damage the IC.
This was a major obstacle during failure analysis.
本発明者は、チップへのバイアス印加状況とＳＥＭ像の
コントラストとの関係を分析した結果、以下に記すよう
な事実を知った。The inventor of the present invention discovered the following fact as a result of analyzing the relationship between the bias application state to the chip and the contrast of the SEM image.
すなわち、電圧印加直後と電圧切断直後では、相互に明
暗が反転した電位コントラストが現れる。That is, a potential contrast in which brightness and darkness are reversed appears immediately after voltage application and immediately after voltage disconnection.
この電位コントラスト像は時間が経過するにつれて弱く
なり、ついには消えてしまう、また、電圧印加・切断を
繰り返せば、電位コントラスト像は交互に明暗が反転し
た像となるが、電圧印加・切断の周期（検出同期）が短
い場合は、コントラストは次第に弱くなり、最後には消
えてしまう。This potential contrast image becomes weaker as time passes and eventually disappears.Also, if voltage application and cutting are repeated, the potential contrast image becomes an image in which the brightness and darkness are alternately reversed, but the period of voltage application and cutting is If (detection synchronization) is short, the contrast gradually weakens and eventually disappears.
しかし、前記検出周期を数十秒乃至数分と長くすると、
電圧印加直後および電源切断直後のコントラストは消え
ず一定の強さを維持することが判明した。たとえば、電
極上に１．２μｍの厚さのＰＳＧＣＶＤ膜（気相化学成
長法によるリン・シリケート・ガラス膜）がある場合で
は、前記検出周期を約２分以上で繰り返した場合、電位
コントラスト像は弱体化することなく常に一定の強さで
現れることが判明した。However, when the detection period is lengthened from several tens of seconds to several minutes,
It was found that the contrast did not disappear immediately after applying voltage and immediately after turning off the power and maintained a constant intensity. For example, in the case where there is a 1.2 μm thick PSGCVD film (phosphorus silicate glass film produced by vapor phase chemical growth method) on the electrode, if the detection period is repeated for about 2 minutes or more, the potential contrast image will be It turns out that it always appears at a constant strength without weakening.
そこで、本発明者は、長い周期の電圧パルスを入力する
ことにより、パルス立ち上がり直後またはパルス立ち下
がり直後の電位コントラスト像を鮮明に観察測定できる
ことに気が付き本発明をなした。Therefore, the inventor of the present invention realized that by inputting a voltage pulse with a long period, it is possible to clearly observe and measure a potential contrast image immediately after the pulse rises or immediately after the pulse falls, and developed the present invention.
本発明の目的は、絶縁膜下の配線電極の電位コントラス
ト像を絶縁膜を除去することなく高精度に定量測定でき
る電子ビーム技術を提供することにある。An object of the present invention is to provide an electron beam technique that can quantitatively measure a potential contrast image of a wiring electrode under an insulating film with high precision without removing the insulating film.
本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、本発明の電子ビームテスト技術にあっては、
走査型電子顕微鏡の試料室内に配置された表面が絶縁膜
で被われたチップに対して行うバイアス印加・切断の周
期を数十秒乃至数分と長（し、前記周期が長い故に弱体
化しない鮮明な電位コントラスト像を定量的に測定し、
絶縁膜下の電極電位を測定する。That is, in the electron beam test technology of the present invention,
The cycle of bias application and cutting performed on a chip whose surface is covered with an insulating film placed in the sample chamber of a scanning electron microscope is long, ranging from several tens of seconds to several minutes. Quantitatively measure clear potential contrast images,
Measure the electrode potential under the insulating film.
上記のように、本発明の電子ビームテスト技術にあって
は、絶縁膜下の電極の電位を走査型電子顕微鏡の試料室
内に配置されたチップに、長周期となるバイアス印加・
切断の周期が数十秒乃至数分と従来の１秒乃至数秒以下
に比較して長い検出周期で行なうことから、バイアス印
加直後およびバイアス切断直後の電位コントラスト像は
弱体化することなく鮮明となるため、再現性良くかつ高
精度に電極電位を定量測定できるようになる。As described above, in the electron beam test technology of the present invention, the potential of the electrode under the insulating film is applied by applying a long-period bias to the chip placed in the sample chamber of the scanning electron microscope.
Because the cutting cycle is several tens of seconds to several minutes, which is longer than the conventional detection cycle of one second to several seconds, the potential contrast images immediately after bias application and bias cutting are clear without weakening. Therefore, it becomes possible to quantitatively measure the electrode potential with good reproducibility and high accuracy.
以下図面を参照して本発明の一実施例について説明する
。An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例によるバイアス印加・切断と
電位コントラストとを示す波形図、第２図は同じく電子
ビームテスターの要部を示す模式本発明による電子ビー
ムテスターは、第２図に示されるような構成となってい
る。この図は、電子ビームテスターの要部を概念的に示
したものである。FIG. 1 is a waveform diagram showing bias application/cutting and potential contrast according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing the main parts of an electron beam tester. It is configured as shown. This figure conceptually shows the main parts of an electron beam tester.
電子ビームテスターの試料室１内には、ステージ２が配
設されている。このステージ２の主面には、配線基板等
からなるソケット３が取り付けられている。ＩＣ等から
なる試料４は、前記ソケット３に取り付けられる。A stage 2 is disposed within a sample chamber 1 of the electron beam tester. A socket 3 made of a wiring board or the like is attached to the main surface of the stage 2. A sample 4 made of an IC or the like is attached to the socket 3.
一方、前記試料４０図示しないチップ表面に対して、電
子ビーム５が照射される。この電子ビーム５は、Ｃ：Ｐ
Ｕ （中央処理装置）６によって制御されるパルス発振
器７による図示しない電子銃からの放射によって発生す
る。また、前記パルス発振器７は、図示しない位相調整
器等によって、後述する試料４を動作させるバイアス印
加装置（ドライブ装置）８との位相調整が図られるよう
になっている。On the other hand, the chip surface (not shown) of the sample 40 is irradiated with an electron beam 5. This electron beam 5 is C:P
It is generated by radiation from an electron gun (not shown) by a pulse oscillator 7 controlled by a central processing unit (U) 6. Further, the pulse oscillator 7 is configured to adjust its phase with a bias application device (drive device) 8 that operates the sample 4, which will be described later, by a phase adjuster or the like (not shown).
また、前記試料室ｌには、試料４から発生する二次電子
を検出する二次電子検出器９が配設されている。この二
次電子検出器９の検出情報は、前記ＣＰＵ６に伝送され
る。ＣＰＵ６は演算装置ＩＯを有し、前記二次電子検出
器９から送り込まれた信号に基づき演算装置１０で演算
を行わせるようになっている。Further, a secondary electron detector 9 for detecting secondary electrons generated from the sample 4 is disposed in the sample chamber l. The detection information of this secondary electron detector 9 is transmitted to the CPU 6. The CPU 6 has an arithmetic unit IO, and is configured to cause the arithmetic unit 10 to perform calculations based on the signal sent from the secondary electron detector 9.
さらに、前記ＣＰＵ６は、ディスプレイ１１に、試料４
の電位コントラスト像や波形等を映し出すようになって
いる。Furthermore, the CPU 6 displays the sample 4 on the display 11.
It is designed to display potential contrast images and waveforms.
つぎに、このような電子ビームテスターによって、ＩＣ
等のチップにおける配線電極の電位コントラスト像、特
に配線電極が絶縁膜からなるパフシペーション膜で被わ
れている配線電極の電位コントラスト像を定量測定する
方法について説明する。Next, using such an electron beam tester, the IC
A method for quantitatively measuring a potential contrast image of a wiring electrode in a chip such as the above, especially a potential contrast image of a wiring electrode in which the wiring electrode is covered with a puffipation film made of an insulating film, will be described.
最初に、ＩＣ等の試料４が試料室１内のソケット３に取
り付けられる。この試料４は、測定されるチップが露出
する状態となってソケット３に取り付けられる。その後
、前記試料室ｌ内は所定の雰囲気に設定されるとともに
、電子ビーム５が試料４に照射され、かつバイアス印加
装置８によって試料４が動作する。First, a sample 4 such as an IC is attached to the socket 3 in the sample chamber 1. This sample 4 is attached to the socket 3 with the chip to be measured exposed. Thereafter, the interior of the sample chamber 1 is set to a predetermined atmosphere, the sample 4 is irradiated with the electron beam 5, and the sample 4 is operated by the bias application device 8.
バイアス印加装置８によって、試料４は、第１図に示さ
れるように、バイアスの印加（ＯＮ）。A bias is applied (ON) to the sample 4 by the bias application device 8, as shown in FIG.
切断（ＯＦＦ＞が行われる。バイアス印加・切断によっ
て、バイアス印加直後およびバイアス切断直後に、それ
ぞれ電位コントラスト像が発生する。Cutting (OFF>) is performed. Due to bias application and cutting, potential contrast images are generated immediately after bias application and immediately after bias cutting.
そこで、前記二次電子検出器９によって、被測定個所の
電位コントラスト像を検出する。この検出情報は統計計
算される。Therefore, the secondary electron detector 9 detects a potential contrast image of the location to be measured. This detection information is statistically calculated.
なお、第１図におけるＡ、、Ａ、、Ａ、は、バイアスが
ＯＮされた時点であり、Ｂｌ 、 Ｂｌ 、 Ｂ、は、
バイアスがＯＦＦされた時点である。また、バイアス印
加・切断の周期は、数十秒乃至数分と従来の装置に比較
して極めて長くなっている。In addition, A, , A, , A in FIG. 1 are the times when the bias is turned on, and Bl , Bl , B are as follows.
This is the time when the bias is turned off. Furthermore, the cycle of bias application and cutting is extremely long, ranging from several tens of seconds to several minutes, compared to conventional devices.
これは、本発明者等のバイアス印加・切断と電位コント
ラスト像との相関を、考究した結果である。すなわち、
従来の場合には、バイアス印加・切断のＩ１期は１秒以
内のものが多（、長くても数秒である。この場合、電圧
印加直後と電圧切断直後では、相互に明暗が反転した電
位コントラストが現れるが、この電位コントラスト像は
バイアス印加・切断を繰り返していくうちに、コントラ
ストは次第に弱くなり、最後には消えてしまう。This is the result of the inventors' study of the correlation between bias application/cutting and potential contrast images. That is,
In conventional cases, the I1 period of bias application/cutting is often less than 1 second (or several seconds at most. In this case, the potential contrast is reversed in brightness and darkness immediately after voltage application and immediately after voltage cutoff. appears, but as bias application and cutting are repeated in this potential contrast image, the contrast gradually weakens and eventually disappears.
これに対して、本発明者による実験では、バイアス印加
・切断の周期を数十秒乃至数分とすると、バイアス印加
・切断を繰り返して行っても、バイアス印加・切断、す
なわち、パルス立上がり、パルス立下がり直後の電位コ
ントラスト像は、弱体化することなく常に鮮明に現れ、
電極電位を定量的に測定できる。たとえば、電極上に１
．２μｍの厚さのＰＳＧＣＶＤ膜がある場合では、前記
検出周期を数秒以内で繰り返すとコントラスト像は段々
弱体化してついには現れなくなるが、前記検出周期を約
２分以上と長くすると、電圧印加直後および電源切断直
後のコントラストは消えることなく、常に一定の強さで
現れる。なお、バイアス印加・切断の周期時間は、絶縁
膜を構成する物質および絶縁膜厚に対応して、適当に選
択すればよい。On the other hand, in experiments conducted by the present inventor, when the period of bias application/cutting is set to several tens of seconds to several minutes, even if bias application/cutting is repeated, bias application/cutting, that is, pulse rising, pulse The potential contrast image immediately after falling always appears clearly without weakening.
Electrode potential can be measured quantitatively. For example, 1
．． In the case of a PSGCVD film with a thickness of 2 μm, if the detection period is repeated within a few seconds, the contrast image gradually weakens and finally does not appear. However, if the detection period is lengthened to about 2 minutes or more, the contrast image is The contrast immediately after the power is turned off does not disappear and always appears at a constant intensity. Note that the periodic time of bias application and cutting may be appropriately selected depending on the material constituting the insulating film and the thickness of the insulating film.
このような実施例によれば、つぎのような効果が得られ
る。According to such an embodiment, the following effects can be obtained.
（１）本発明の電子ビームテスト技術によれば、絶縁膜
下の配線電極の電位コントラスト像を絶縁膜を除去する
ことなく高精度に定量測定できるという効果が得られる
。(1) According to the electron beam test technique of the present invention, it is possible to obtain the effect that a potential contrast image of a wiring electrode under an insulating film can be quantitatively measured with high precision without removing the insulating film.
（２）上記（１）により、本発明の電子ビームテスト技
術によれば、絶縁膜下の配線電極の電位コントラスト像
を、チップ全体に亘って高精度に観察できるという効果
が得られる。(2) According to the above (1), according to the electron beam test technique of the present invention, it is possible to obtain the effect that a potential contrast image of a wiring electrode under an insulating film can be observed with high precision over the entire chip.
（３）本発明の電子ビームテスト技術によれば、絶縁膜
下の配線電極の電位コントラスト像を測定するに際して
、非接触で測定できるため、電極上の絶縁膜を除去する
必要もないことから、絶縁膜除去によってＩＣ等のチッ
プを壊すようなこともなくなるという効果が得られる。(3) According to the electron beam test technology of the present invention, when measuring a potential contrast image of a wiring electrode under an insulating film, it can be measured without contact, so there is no need to remove the insulating film on the electrode. The effect of removing the insulating film is that chips such as ICs are not damaged.
（４）上記（１）により、本発明の電子ビームテスト技
術によれば、測定に際して、電極上の絶縁膜を除去する
必要もないことから、測定作業の作業性が高くなり、ス
ループ７トが向上するという効果が得られる。(4) According to (1) above, according to the electron beam test technology of the present invention, there is no need to remove the insulating film on the electrode during measurement, so the workability of the measurement work is increased and the throughput is reduced. The effect of improvement can be obtained.
（５）上記（１）〜（４）により、本発明によれば、絶
縁膜下の配線電極を高精度にかつ高スルーブツトで測定
できるという相乗効果が得られる。(5) According to the above (1) to (4), according to the present invention, a synergistic effect is obtained in that the wiring electrode under the insulating film can be measured with high precision and high throughput.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は上記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor.
以上の説明では主として本発明者によってなされた発明
を、その背景となった利用分野であるＩＣ等の半導体素
子における絶縁膜下の配線電極の電位コントラスト像を
測定する技術に適用した場合について説明したが、それ
に限定されるものではない。The above explanation mainly describes the case where the invention made by the present inventor is applied to the technology for measuring the potential contrast image of a wiring electrode under an insulating film in a semiconductor device such as an IC, which is the field of application that forms the background of the invention. However, it is not limited to this.
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記のとおりであ
る。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.
本発明の電子ビームテスト技術にあっては、絶縁膜下の
電極の電位を走査型電子顕微鏡の試料室内に配置された
チップに、長周期となるバイアス印加・切断の周期が数
十秒乃至数分と従来の１秒乃至数秒以下に比較して長い
検出周期で行なうことから、バイアス印加直後およびバ
イアス切断直後の電位コントラスト像は弱体化すること
なく鮮明となるため、再現性良くかつ高精度に電極電位
を定量測定できるようになる。また、本発明によれば、
絶縁膜を除去することなく絶縁膜下の配線電極の電位コ
ントラスト像を検出できるため、作業性が向上するとと
もに、絶縁膜除去によるチップ破１員もなくなり、歩留
りも向上する。In the electron beam test technology of the present invention, the potential of an electrode under an insulating film is applied to a chip placed in a sample chamber of a scanning electron microscope, and the long period of bias application and cutting is from several tens of seconds to several seconds. Because the detection cycle is longer than the conventional one to several seconds, the potential contrast images immediately after bias application and bias disconnection are clear without weakening, resulting in good reproducibility and high precision. It becomes possible to quantitatively measure electrode potential. Further, according to the present invention,
Since the potential contrast image of the wiring electrode under the insulating film can be detected without removing the insulating film, work efficiency is improved, chip breakage due to the removal of the insulating film is eliminated, and the yield is also improved.
第１図は本発明の一実施例によるバイアス印加・切断と
電位コントラストとを示す波形図、第２図は同しく電子
ビームテスターの要部を示す模式図である。FIG. 1 is a waveform diagram showing bias application/cutting and potential contrast according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing the main parts of an electron beam tester.
Claims (4)
プの絶縁膜下の電極の電位コントラストを検出する電子
ビームテスト方法であって、前記バイアス印加・切断の
周期はバイアス印加・切断直後の電位コントラスト像が
消失する時間を越える周期で行われることを特徴とする
電子ビームテスト方法。1. An electron beam test method that detects the potential contrast of an electrode under an insulating film of a chip while repeating bias application and cutting to the chip, and the cycle of bias application and cutting causes the potential contrast image immediately after bias application and cutting to disappear. An electron beam test method characterized by being carried out at a period exceeding time.
なっていることを特徴とする特許請求の範囲第１項記載
の電子ビームテスト方法。2. 2. The electron beam test method according to claim 1, wherein the bias application/cutting cycle is from several tens of seconds to several minutes.
室に収容された試料に周期的にバイアス印加・切断を行
うバイアス印加装置と、前記試料から放出される二次電
子を検出する二次電子検出器と、を有する電子ビームテ
スターであって、前記バイアス印加装置はバイアス印加
・切断の周期が数十秒乃至数分に設定できるように構成
されていることを特徴とする電子ビームテスター。3. A scanning electron microscope, a bias application device that periodically applies a bias to and cuts a sample housed in a sample chamber of the scanning electron microscope, and a secondary electron detector that detects secondary electrons emitted from the sample. 1. An electron beam tester comprising: an electron beam tester, wherein the bias application device is configured such that a bias application/cutting cycle can be set to several tens of seconds to several minutes.
期のパルスを発信するように構成されていることを特徴
とする特許請求の範囲第３項記載の電子ビームテスター
。4. 4. The electron beam tester according to claim 3, wherein the bias application device is configured to emit pulses with a long period of several tens of seconds to several minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62128274A JPS63293936A (en) | 1987-05-27 | 1987-05-27 | Electron beam testing method and electron beam tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62128274A JPS63293936A (en) | 1987-05-27 | 1987-05-27 | Electron beam testing method and electron beam tester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63293936A true JPS63293936A (en) | 1988-11-30 |
Family
ID=14980775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62128274A Pending JPS63293936A (en) | 1987-05-27 | 1987-05-27 | Electron beam testing method and electron beam tester |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63293936A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008210715A (en) * | 2007-02-27 | 2008-09-11 | Ebara Corp | Charged particle beam device, and sample surface observation method using the same |
-
1987
- 1987-05-27 JP JP62128274A patent/JPS63293936A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008210715A (en) * | 2007-02-27 | 2008-09-11 | Ebara Corp | Charged particle beam device, and sample surface observation method using the same |
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