JPS63293828A - Semiconductor substrate processor - Google Patents

Semiconductor substrate processor

Info

Publication number
JPS63293828A
JPS63293828A JP13017687A JP13017687A JPS63293828A JP S63293828 A JPS63293828 A JP S63293828A JP 13017687 A JP13017687 A JP 13017687A JP 13017687 A JP13017687 A JP 13017687A JP S63293828 A JPS63293828 A JP S63293828A
Authority
JP
Japan
Prior art keywords
quartz tube
detected
detector
semiconductor substrate
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13017687A
Other languages
Japanese (ja)
Inventor
Seiichi Kumagai
誠一 熊谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP13017687A priority Critical patent/JPS63293828A/en
Publication of JPS63293828A publication Critical patent/JPS63293828A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To detect the damage of a quartz tube for discovering the same in an early stage by a method wherein a shock noise produced when the quartz tube protecting a heater is damaged is detected by a detector. CONSTITUTION:A quartz tube 3 protects a heater 2 built therein to keep a chemical solution 6 at high temperature. A vibration detector 4 is arranged in contact with the surface of the quartz tube 3. An alarming circuit 5 issue an alarm in accordance with detecting signals generated from the detector 4. Whenever the quartz tube 3 is damaged by any external force, a specific abnormal shock noise is propagated in the wall of the quartz tube 3 to be detected by the detector 4. At this time, this shock noise is detected as a vibration higher than the normal signal level so that the damage of the quartz tube 3 may be detected by the difference in these two vibrations to issue an alarm from the circuit 5. Through these procedures, the damage of the quartz tube 3 can be discovered in an early stage.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板処理装置に関し、特に複数枚の半導
体基板を薬液に浸漬して処理する半導体基板処理装置に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor substrate processing apparatus, and more particularly to a semiconductor substrate processing apparatus that processes a plurality of semiconductor substrates by immersing them in a chemical solution.

〔従来の技術〕[Conventional technology]

従来、この種の半導体基板処理装置は、ヒータを内蔵す
る石英管の破損をヒータの断線又は石英管破損によるヒ
ータ線からの薬液への漏電により検出する構造となって
いた。
Conventionally, this type of semiconductor substrate processing apparatus has a structure in which damage to a quartz tube containing a heater is detected by disconnection of the heater or leakage of current from the heater wire to the chemical solution due to breakage of the quartz tube.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の半導体基板処理装置は、使用する薬液等
の液体が酸及びアルカリ等の電解質であれば、ヒータ線
が液体に暴露される事によりヒータ線の急激な腐蝕によ
る断線やヒータ線からの漏れ電流の増加から石英管の破
損を容易に検出できるが、有機溶剤のほとんどは腐蝕性
が弱くがっ電気絶縁性も高いので、石英管の破損を発見
するのが遅れ、長期にわたって処理する半導体基板に汚
染等の悪影響を与えるという欠点がある。
In the conventional semiconductor substrate processing equipment described above, if the liquid such as a chemical solution used is an electrolyte such as an acid or an alkali, the heater wire is exposed to the liquid, resulting in breakage due to rapid corrosion of the heater wire or breakage from the heater wire. Damage to a quartz tube can be easily detected from an increase in leakage current, but since most organic solvents have weak corrosive properties and high electrical insulating properties, detection of breakage in a quartz tube may be delayed, and semiconductors that will be processed over a long period of time can be easily detected. This method has the disadvantage of causing adverse effects such as contamination on the substrate.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体基板処理装置は、内部に薬液を注入し半
導体基板収納箱に収納した複数の半導体基板を処理する
処理槽と、前記薬液の温度を制御するヒータを内蔵した
石英管と、該石英管の表面に接して配置され前記石英管
の破壊時の振動を検出する振動検出器とを含で構成され
る。
The semiconductor substrate processing apparatus of the present invention includes: a processing tank for processing a plurality of semiconductor substrates into which a chemical solution is injected and stored in a semiconductor substrate storage box; a quartz tube having a built-in heater for controlling the temperature of the chemical solution; and a vibration detector disposed in contact with the surface of the tube to detect vibrations when the quartz tube is broken.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.

第1図に示すように、内部に薬液6を注入して半導体基
板収納箱(図示せず)に収納した複数枚の半導体基板を
浸漬して半導体基板の処理及び洗浄を行う処理槽1と、
薬液6の温度を高温に保つためのヒータ2を内蔵してビ
ータ2を保護する石英管3と、石英管3の表面に接して
配置される振動検出器4と、振動検出器4からの検出信
号に応じて警報を発する警報回路5とを含む。
As shown in FIG. 1, a processing tank 1 in which a chemical solution 6 is injected and a plurality of semiconductor substrates stored in a semiconductor substrate storage box (not shown) is immersed therein to process and clean the semiconductor substrates;
A quartz tube 3 has a built-in heater 2 for keeping the temperature of the chemical solution 6 at a high temperature to protect the beater 2, a vibration detector 4 placed in contact with the surface of the quartz tube 3, and detection from the vibration detector 4. and an alarm circuit 5 that issues an alarm in response to a signal.

いま、何らかの外力により石英管3が破損すると、通常
と異なる特有の衝撃音が石英管3の管壁を伝播し振動検
出器4により検出される。この場合、通常の信号レベル
より大きな振動として検出されるので、両者の差により
石英管3の破損と判定して警報回路5から警報を発する
Now, when the quartz tube 3 is damaged by some external force, an unusual and unique impact sound propagates through the wall of the quartz tube 3 and is detected by the vibration detector 4. In this case, since the vibration is detected as being larger than the normal signal level, it is determined that the quartz tube 3 is damaged based on the difference between the two, and the alarm circuit 5 issues an alarm.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、ヒータを保護する石英管
の破損時に発生する衝撃音を検出することにより、石英
管の破損を認識できるので、使用する薬液の性質に関係
なく石英管の破損を早期発見できる効果がある。
As explained above, the present invention allows damage to the quartz tube to be recognized by detecting the impact sound that occurs when the quartz tube that protects the heater is broken. It is effective for early detection.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の断面図である。 FIG. 1 is a sectional view of an embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 内部に薬液を注入し半導体基板収納箱に収納した複数の
半導体基板を処理する処理槽と、前記薬液の温度を制御
するヒータを内蔵した石英管と、該石英管の表面に接し
て配置され前記石英管の破壊時の振動を検出する振動検
出器とを含むことを特徴とする半導体基板処理装置。
a processing tank into which a chemical solution is injected and processes a plurality of semiconductor substrates stored in a semiconductor substrate storage box; a quartz tube having a built-in heater for controlling the temperature of the chemical solution; A semiconductor substrate processing apparatus comprising: a vibration detector that detects vibrations when a quartz tube is broken.
JP13017687A 1987-05-26 1987-05-26 Semiconductor substrate processor Pending JPS63293828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13017687A JPS63293828A (en) 1987-05-26 1987-05-26 Semiconductor substrate processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13017687A JPS63293828A (en) 1987-05-26 1987-05-26 Semiconductor substrate processor

Publications (1)

Publication Number Publication Date
JPS63293828A true JPS63293828A (en) 1988-11-30

Family

ID=15027863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13017687A Pending JPS63293828A (en) 1987-05-26 1987-05-26 Semiconductor substrate processor

Country Status (1)

Country Link
JP (1) JPS63293828A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6013734B2 (en) * 1979-11-15 1985-04-09 デイ−テル・クプカ Stirring mechanism
JPS61137328A (en) * 1984-12-10 1986-06-25 Hitachi Ltd Heating apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6013734B2 (en) * 1979-11-15 1985-04-09 デイ−テル・クプカ Stirring mechanism
JPS61137328A (en) * 1984-12-10 1986-06-25 Hitachi Ltd Heating apparatus

Similar Documents

Publication Publication Date Title
CN103119705A (en) Etch-resistant coating on sensor wafers for in-situ measurement
TWI492671B (en) Plasma unconfinement sensor and methods thereof
US7696538B2 (en) Sensor for measuring liquid contaminants in a semiconductor wafer fabrication process
US20100129940A1 (en) Vibration monitoring of electronic substrate handling systems
JP2006237456A (en) Substrate processor and method for preventing scatter of substrate
JPS63293828A (en) Semiconductor substrate processor
KR880010484A (en) Wafer counter
KR20080059059A (en) Method and system of detecting occurrence of sticking of substrate
US20160320442A1 (en) Electric arc detection
US6593759B2 (en) Apparatuses and methods for determining if protective coatings on semiconductor substrate holding devices have been compromised
CN100385611C (en) Method and apparatus for monitoring film deposition in a process chamber
JPH06129927A (en) Pressure sensor
US5827986A (en) Apparatus for cleaning semiconductor wafers
KR20060027626A (en) Purge storage of semiconductor device fabrication equipment
JP2000121615A (en) Manufacture of electronic component and its manufacturing device
KR20040040106A (en) Apparatus removing static electricity of semiconductor wafer
US4773940A (en) Lead frame preparation for solder dipping
KR950009254Y1 (en) Plasma processing apparatus of semiconductor manufacturing apparatus
JPH04291921A (en) Wafer surface treatment apparatus
JP4271741B2 (en) Semiconductor parts
JP2000124293A (en) Wafer detecting device for wafer washing vessel
JPS56152247A (en) Testing method for semiconductor device
KR100481279B1 (en) A wafer boat for a semiconductor device fabrication
JP4751686B2 (en) Manufacturing method of semiconductor device
KR970063458A (en) Cooling system for chemical vapor deposition equipment