JPS63291837A - Solution for peeling dielectric coated film and method therefor - Google Patents
Solution for peeling dielectric coated film and method thereforInfo
- Publication number
- JPS63291837A JPS63291837A JP12687487A JP12687487A JPS63291837A JP S63291837 A JPS63291837 A JP S63291837A JP 12687487 A JP12687487 A JP 12687487A JP 12687487 A JP12687487 A JP 12687487A JP S63291837 A JPS63291837 A JP S63291837A
- Authority
- JP
- Japan
- Prior art keywords
- coating film
- peeling
- glass substrate
- water
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 9
- 238000000576 coating method Methods 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004327 boric acid Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 23
- 150000002978 peroxides Chemical class 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 9
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 5
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 12
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 7
- 239000005083 Zinc sulfide Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- -1 magnesium fluoride Chemical compound 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ガラス基板上にコーティングされた膜をガラ
ス基板をいためることなく剥離する剥離液および剥離方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a stripping solution and a stripping method for stripping a film coated on a glass substrate without damaging the glass substrate.
［従来の技術］
従来、ガラス基板上の誘電体コーティング膜を剥離する
剥離液は硫酸水溶液がもっばら使用されていた。この硫
酸水溶液は、コーティング膜の剥離能力が劣るため、剥
離が完了するまで長時間の浸漬が必要であり、基板ガラ
ス成分のうち酸に溶解しやすいナトリウム、カルシウム
などの成分が消失しガラス表面のいたみが起こっていた
。また弗化マグネシウムなど、その成分に弗化が含まれ
ているコーティング物質を硫酸水溶液中で、浸漬剥離す
る際に、弗化水素が生成し、基板ガラス表面の著しいい
たみが起こっていた。[Prior Art] Conventionally, a sulfuric acid aqueous solution has been mostly used as a stripping solution for stripping a dielectric coating film on a glass substrate. This sulfuric acid aqueous solution has poor peeling ability for the coating film, so long immersion is required until the peeling is completed, and components of the substrate glass, such as sodium and calcium that are easily soluble in acids, disappear and the glass surface is removed. Injury was occurring. Further, when a coating material containing fluoride as a component, such as magnesium fluoride, is immersed in an aqueous sulfuric acid solution and peeled off, hydrogen fluoride is generated, causing significant damage to the surface of the glass substrate.
［発明が解決しようとする問題点］
本発明は硫酸（Ｈ２５Ｏ４）： １３〜１７％、水（Ｈ
，Ｏ）： ５８〜６２％、過酸過水素（Ｈ２Ｏ２）：
２２〜２６％、硼酸
（８３ＢＯｓ ）： １〜２％からなることを特徴とす
る誘電体コーティング物の剥離液に第１の要旨があり、
上記剥離液を用いてガラス基板上の酸化チタン、酸化硅
素を主成分とするコーティング膜では、１１５〜１２５
℃に加熱した剥離液中に１５〜３０分間ガラス基板を浸
漬して、ガラス基板上のコーティング膜を剥離する誘電
体コーティング膜の剥離方法に第２の要旨がある。また
ガラス基板上の硫化亜鉛、弗化マグネシウムを主成分と
するコーティング艙では、４５〜５５℃に加熱した剥離
液中に１５〜３０分間ガラス基板を浸漬して、ガラス基
板上のコーティング膜を剥離することを特徴とする誘電
体コーティング膜の剥離方法に第３の要旨が存在する。[Problems to be Solved by the Invention] The present invention uses sulfuric acid (H25O4): 13 to 17%, water (H25O4):
, O): 58-62%, peroxyhydrogen peroxide (H2O2):
22-26%, boric acid (83BOs): 1-2%;
A coating film containing titanium oxide and silicon oxide as main components on a glass substrate using the above stripping solution has a coating film of 115 to 125
The second gist is a method for peeling a dielectric coating film, in which the glass substrate is immersed in a peeling solution heated to 0.degree. C. for 15 to 30 minutes to peel off the coating film on the glass substrate. In addition, in a coating tank that mainly contains zinc sulfide and magnesium fluoride on glass substrates, the coating film on the glass substrate is peeled off by immersing the glass substrate in a stripping solution heated to 45 to 55 degrees Celsius for 15 to 30 minutes. There is a third gist in a method for peeling off a dielectric coating film.
［作用］
本発明における各添加成分の限定理由および作用につい
て説明する。[Function] The reason for limitation and the function of each additive component in the present invention will be explained.
硫酸：１３〜１７％ 硫酸は膜の溶解剥離作用をおこなう成分であり、。Sulfuric acid: 13-17% Sulfuric acid is a component that dissolves and peels off the film.
１３％未満では剥離の速度が著しく遅くなり、また１７
％を超えるとガラス表面にあれが生じる。If it is less than 13%, the rate of peeling will be significantly slow;
If it exceeds %, roughness will appear on the glass surface.
水：５８〜６４％。Water: 58-64%.
水は各添加成分を溶解する成分であり、迅速な剥離速度
とガラス表面のあれ防止を共に満足する液濃度の調整を
おこなう。Water is a component that dissolves each additive component, and adjusts the liquid concentration to satisfy both a rapid peeling speed and prevention of roughness on the glass surface.
過酸化水素２２〜２６％、過酸過水素は、硫酸による膜
の溶解剥離を促進させる成分であり、２２％未満では剥
離促進作用が低く、また２６％を超えると過酸過水素の
急激な分解が起こり、取扱が危険となる。22 to 26% hydrogen peroxide, perhydrogen peroxide is a component that promotes the dissolution and peeling of the film by sulfuric acid. If it is less than 22%, the peeling promoting effect is low, and if it exceeds 26%, the peroxyhydrogen peroxide has a rapid effect. Decomposition may occur, making handling dangerous.
硼酸：１〜２％
硼酸は弗化マグネシウムなど、その成分に弗素が含まれ
ているコーティング物質が剥離液成分中の硫酸に溶解し
た際に生ずる弗化水素と反応して硼弗化物となり、弗化
水素によるガラス浸食を防止する。１％末溝では、硼弗
酸の生成が不充分であるため、基板ガラスに浸食が起こ
る。浸食を防止するには１％で充分であり、２％を超え
ても浸食防止の効果は変化がない。Boric acid: 1-2% Boric acid reacts with hydrogen fluoride generated when a coating material containing fluorine, such as magnesium fluoride, is dissolved in sulfuric acid in the remover component to form borofluoride. Prevents glass erosion caused by hydrogen chloride. In the case of a 1% groove, the production of borofluoric acid is insufficient, and therefore the substrate glass is eroded. 1% is sufficient to prevent erosion, and even if it exceeds 2%, the erosion prevention effect remains unchanged.
上記組成の剥離液を用いてコーティング膜の剥離をおこ
なうが、その剥離方法を適切に設定しなければガラス基
板表面にあれが生じる。The coating film is removed using a removal solution having the above composition, but if the removal method is not set appropriately, roughness will occur on the surface of the glass substrate.
したがって本発明の剥離方法は、前記した問題点を解決
するために、以下のようにして剥ｌｌ！１ＩＩＡ理をお
こなう。Therefore, in order to solve the above-mentioned problems, the peeling method of the present invention peels off as follows. 1IA Perform the principles.
前記の組成で作成した剥離液を、酸化チタン、酸化硅素
を主成分とするコーティング膜では、１１５〜１２５℃
に加熱した剥離液中に１５〜３０分間浸漬した後水洗、
乾燥する。For coating films containing titanium oxide and silicon oxide as main components, the stripping solution prepared with the above composition was heated to 115 to 125°C.
After soaking in a stripping solution heated to 15 to 30 minutes, washing with water,
dry.
また硫化亜鉛、弗化マグネシウムを主成分とするコーテ
ィング膜では、４５〜５５℃に加熱した剥離液中に１５
〜３０分間浸漬した後、水洗、乾燥する。In addition, for coating films whose main components are zinc sulfide and magnesium fluoride,
After soaking for ~30 minutes, wash with water and dry.
［実施例］ 以下、本発明を実施例をあげて詳細に説明する。[Example] Hereinafter, the present invention will be explained in detail by giving examples.
硫酸 ：２５ｇ
水 ：１００ｇ
過酸化水素＝３７ｇ
硼酸 ：１．Ｂｇ
以上の組成の剥離液を用い、硬質ガラス（ガラス組成５
ｉ０２：８０．６％＊ Ｂ、Ｏ，：１１．９％１Ａｊ１
２Ｏｓ ： ２．０％、Ｃａｂ：１．１％、Ｎａ、Ｏ
：４．４％）
基板上の酸化チタン、酸化硅素を主成分とするコーティ
ング膜および硫化亜鉛、弗化マグネシウムを主成分とす
るコーティング膜を剥離した剥離の条件は以下のとおり
とした。Sulfuric acid: 25g Water: 100g Hydrogen peroxide = 37g Boric acid: 1. Using a stripper with a composition of Bg or higher, hard glass (glass composition 5
i02:80.6%*B,O,:11.9%1Aj1
2Os: 2.0%, Cab: 1.1%, Na, O
:4.4%) The conditions for peeling off the coating film mainly composed of titanium oxide and silicon oxide and the coating film mainly composed of zinc sulfide and magnesium fluoride on the substrate were as follows.
酸化チタン、酸化硅素を主成分とするコーティング膜の
剥離条件。Conditions for peeling off coatings whose main components are titanium oxide and silicon oxide.
剥離液温度 １２Ｏ℃
浸漬時間 ２Ｏ分
硫化亜鉛、弗化マグネシウムを主成分とするコーティン
グ膜の剥離条件。Stripping solution temperature: 120°C Immersion time: Stripping conditions for a coating film whose main components are zinc sulfide and magnesium fluoride.
剥離液温度 ５０℃
浸漬時間 ２Ｏ分
以上の実施の結果、ガラス基板上のコーティング膜は完
全に溶解剥離し、かつガラス基板表面にあれは認められ
なかった。As a result of the stripping solution temperature of 50° C. and immersion time of 20 minutes or more, the coating film on the glass substrate was completely dissolved and peeled off, and no defects were observed on the surface of the glass substrate.
［発明の効果］
本発明は、従来良好な剥離が困難であったがガラス基板
上の酸化チタン、酸化硅素を主成分とするコーティング
膜および硫化亜鉛、弗化マグネシウムを主成分とするコ
ーチイブ膜を容易に剥離可能な剥離液および剥離方法を
提供することができる。[Effects of the Invention] The present invention improves coating films containing titanium oxide and silicon oxide as main components and coachib films containing zinc sulfide and magnesium fluoride as main components on glass substrates, which have conventionally been difficult to peel well. It is possible to provide a stripping solution and a stripping method that allow easy stripping.
Claims (3)
以下同じとする）、水（Ｈ＿２Ｏ）：５８〜６２％、過
酸過水素（Ｈ＿２Ｏ＿２）：２２〜２６％、硼酸（Ｈ＿
３ＢＯ＿３）：１〜２％からなることを特徴とする誘電
体コーティング膜の剥離液。(1) Sulfuric acid (H_2SO_4): 13-17% (wt%
The same shall apply hereinafter), Water (H_2O): 58-62%, Perhydrogen peroxide (H_2O_2): 22-26%, Boric acid (H_2O_2): 22-26%, Boric acid (H_2O_2): 22-26%
3BO_3): A stripping solution for a dielectric coating film characterized by comprising 1 to 2%.
とするコーティング膜を剥離するに当り、１１５〜１２
５℃に加熱したＨ＿２ＳＯ＿４：１３〜１７％、Ｈ＿２
Ｏ：５８〜６２％、Ｈ＿２Ｏ＿２：２２〜２６％、Ｈ＿
３ＢＯ＿３：１〜２％からなる剥離液の中に前記ガラス
基板を１５〜３０分間浸漬して、ガラス基板上のコーテ
ィング膜を剥離することを特徴とする誘電体コーティン
グ膜の剥離方法。(2) When peeling off the coating film mainly composed of TiO_2 and SiO_2 on the glass substrate, 115 to 12
H_2SO_4 heated to 5°C: 13-17%, H_2
O: 58-62%, H_2O_2: 22-26%, H_
3BO_3: A method for peeling a dielectric coating film, which comprises immersing the glass substrate in a stripping solution containing 1 to 2% for 15 to 30 minutes to peel off the coating film on the glass substrate.
るコーティング膜を剥離するに当り、４５〜５５℃に加
熱したＨ＿２ＳＯ＿４：１３〜１７％、Ｈ＿２Ｏ：５８
〜６２％、Ｈ＿２Ｏ＿２：２２〜２６％、Ｈ＿３ＢＯ＿
３：１〜２％からなる剥離液の中に前記ガラス基板を１
５〜３０分間浸漬して、ガラス基板上のコーティング膜
を剥離することを特徴とする誘電体コーティング膜の剥
離方法。(3) When peeling off the coating film mainly composed of ZnS and MgF_2 on the glass substrate, H_2SO_4: 13-17%, H_2O: 58% heated to 45-55°C.
~62%, H_2O_2:22-26%, H_3BO_
3: Place the glass substrate in a stripping solution of 1 to 2%.
A method for peeling a dielectric coating film, which comprises peeling off a coating film on a glass substrate by immersing it for 5 to 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12687487A JPS63291837A (en) | 1987-05-26 | 1987-05-26 | Solution for peeling dielectric coated film and method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12687487A JPS63291837A (en) | 1987-05-26 | 1987-05-26 | Solution for peeling dielectric coated film and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63291837A true JPS63291837A (en) | 1988-11-29 |
Family
ID=14945980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12687487A Pending JPS63291837A (en) | 1987-05-26 | 1987-05-26 | Solution for peeling dielectric coated film and method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63291837A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02217336A (en) * | 1989-02-16 | 1990-08-30 | Itochu Shoji Kk | Recording disk substrate and production thereof |
-
1987
- 1987-05-26 JP JP12687487A patent/JPS63291837A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02217336A (en) * | 1989-02-16 | 1990-08-30 | Itochu Shoji Kk | Recording disk substrate and production thereof |
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