JPS63291306A - Manufacture of dielectric resonator material - Google Patents
Manufacture of dielectric resonator materialInfo
- Publication number
- JPS63291306A JPS63291306A JP62125373A JP12537387A JPS63291306A JP S63291306 A JPS63291306 A JP S63291306A JP 62125373 A JP62125373 A JP 62125373A JP 12537387 A JP12537387 A JP 12537387A JP S63291306 A JPS63291306 A JP S63291306A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- calcined
- component
- solution
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000843 powder Substances 0.000 claims abstract description 28
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 5
- 238000010304 firing Methods 0.000 claims description 5
- 238000001354 calcination Methods 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 12
- 229910052788 barium Inorganic materials 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 5
- 239000011259 mixed solution Substances 0.000 abstract description 4
- 229910052776 Thorium Inorganic materials 0.000 abstract description 2
- 229910052735 hafnium Inorganic materials 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 229910052706 scandium Inorganic materials 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 2
- 229910001626 barium chloride Inorganic materials 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910002929 BaSnO3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 1
- ISFLYIRWQDJPDR-UHFFFAOYSA-L barium chlorate Chemical compound [Ba+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O ISFLYIRWQDJPDR-UHFFFAOYSA-L 0.000 description 1
- OOULUYZFLXDWDQ-UHFFFAOYSA-L barium perchlorate Chemical compound [Ba+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O OOULUYZFLXDWDQ-UHFFFAOYSA-L 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- IJCCNPITMWRYRC-UHFFFAOYSA-N methanolate;niobium(5+) Chemical compound [Nb+5].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C IJCCNPITMWRYRC-UHFFFAOYSA-N 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- YEBIHIICWDDQOL-YBHNRIQQSA-N polyoxin Chemical compound O[C@@H]1[C@H](O)[C@@H](C(C=O)N)O[C@H]1N1C(=O)NC(=O)C(C(O)=O)=C1 YEBIHIICWDDQOL-YBHNRIQQSA-N 0.000 description 1
- LMHHRCOWPQNFTF-UHFFFAOYSA-N s-propan-2-yl azepane-1-carbothioate Chemical compound CC(C)SC(=O)N1CCCCCC1 LMHHRCOWPQNFTF-UHFFFAOYSA-N 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- -1 tantalum alkoxide Chemical class 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はマイクロ波用の誘電体共振器材料を製造する方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method of manufacturing a dielectric resonator material for microwaves.
［従来技術］
マイクロ波用の誘電体共振器材料にはＱ値の高いものが
要求されるが、衛星通信等においては特に高いＱ値が要
求される。[Prior Art] A dielectric resonator material for microwaves is required to have a high Q value, and a particularly high Q value is required for satellite communications and the like.
Ｑ値の高い材料としてＢａ （Ｚｎ１，３ Ｍｅ２／３
）０３系セラミックス（但しＭｅはＮｂおよびＴａの
いずれか）がある。Ba (Zn1,3 Me2/3
)03 series ceramics (where Me is either Nb or Ta).
このセラミック材料は一般に、Ｂ ａ Ｃ０３、ＺｎＯ
１Ｎｂ２０５ 、Ｔａ２−０５を主成分とする混合粉末
を焼成することにより製造されているが、難焼結性で、
期待される高誘電率およびＱ値が得られていない。This ceramic material is generally B a C03, ZnO
It is manufactured by firing a mixed powder whose main components are 1Nb205 and Ta2-05, but it is difficult to sinter,
The expected high dielectric constant and Q value were not obtained.
［本発明が解決しようとする問題点］
本発明は上記の実情に濫み、組織が緻密で、誘電率およ
びＱ値が向上されたＢａ （Ｚｎ１／３ Ｍｅ２／３）
０３系セラミックスを製造する方法を提供することを目
的とするものである。[Problems to be Solved by the Present Invention] The present invention overcomes the above-mentioned circumstances and solves the problem of Ba (Zn1/3 Me2/3) having a dense structure and improved dielectric constant and Q value.
The object of the present invention is to provide a method for manufacturing 03 series ceramics.
［問題点を解決するための手段］
本発明はＢａ（Ｚｎ１／３Ｍｅ２／３）０３系セラミツ
クを製造するのに際し、先ず第１工程としてＢａ以外の
少なくとも１成分とＢａの溶液との混合液、およびＺｎ
以外の少なくとも１成分とＺｎの溶液との混合液のいず
れかを作り、該混合液と沈澱形成液とを混合して共沈体
を形成し、乾燥後７００℃〜１３００℃で仮焼する。[Means for Solving the Problems] In the present invention, when producing a Ba(Zn1/3Me2/3)03 ceramic, the first step is to prepare a mixture of at least one component other than Ba and a solution of Ba; and Zn
A mixed solution of at least one component other than Zn and a solution of Zn is prepared, and the mixed solution and a precipitate forming solution are mixed to form a coprecipitate, which is dried and then calcined at 700°C to 1300°C.
次に第２工程として上記により得られた仮焼物粉末と目
的とするペロブスカイト組成の残りの成分の粉末とを混
合して７００℃〜１３００℃で仮焼する。Next, as a second step, the calcined powder obtained above and the powder of the remaining components of the desired perovskite composition are mixed and calcined at 700°C to 1300°C.
そして第３工程として、得られた仮焼物粉末を成形し、
１２００℃〜１７００℃で焼成する。Then, as a third step, the obtained calcined powder is molded,
Calculate at 1200°C to 1700°C.
第１工程において、Ｂａ溶液、Ｚｎ溶液、Ｎｂ溶液、タ
ンタル溶液としては、塩化バリウム、塩素酸バリウム、
過塩素酸バリウム、硝酸バリウム、酢酸バリウム、バリ
ウムエチレート、バリウムイソプロピレート、塩化亜鉛
、硫酸亜鉛、硝酸亜鉛、酢酸亜鉛、塩化ニオビウム、ニ
オブメトキシド、ニオビウムエチレート、塩化タンタル
、タンクルアルコキシド等の水溶液またはアルコール溶
液が用いられ得る。In the first step, the Ba solution, Zn solution, Nb solution, and tantalum solution include barium chloride, barium chlorate,
Barium perchlorate, barium nitrate, barium acetate, barium ethylate, barium isopropylate, zinc chloride, zinc sulfate, zinc nitrate, zinc acetate, niobium chloride, niobium methoxide, niobium ethylate, tantalum chloride, tantalum alkoxide, etc. Aqueous or alcoholic solutions may be used.
沈澱形成液作製のための試薬としては、アンモニア、炭
酸アンモニウム、苛性アリカリ、しゆう酸、しゆう酸ア
ンモニウム、アミン、オキシン等の有機試薬が用いられ
得る。As the reagent for preparing the precipitate-forming solution, organic reagents such as ammonia, ammonium carbonate, caustic alkali, oxalic acid, ammonium oxalate, amines, and oxins can be used.
Ｂａと（Ｚ ｎ１７３ Ｎｅ２／３ ）のモル比は１．
０ないし、それに近似した値とする。The molar ratio of Ba and (Z n173 Ne2/3) is 1.
It should be 0 or a value close to it.
しかして第１工程において、共沈体を仮焼することによ
り分散性のよいサブミクロン級の微細粉末が得られる。Thus, in the first step, by calcining the coprecipitate, a submicron-level fine powder with good dispersibility can be obtained.
第２工程では、上記仮焼物粉末と目的とするセラミック
組成を構成するに必要な残りの成分の粉末を混合し、仮
焼する。この残りの成分の粉末は、上記仮焼物粉末とほ
ぼ同じ粒度のものを用いることが望ましい。In the second step, the above-mentioned calcined powder and the powders of the remaining components necessary to form the desired ceramic composition are mixed and calcined. It is desirable that the remaining component powder has approximately the same particle size as the calcined powder.
なお、製造の工程において微量の焼結助剤を添加するこ
とができる。焼結助剤としては、Ｚｒ、Ｍｇ、、Ｓｃ、
Ｈｆ、Ｔｈ、Ｗ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｔｉ、Ｍｎ
、Ｆｅ、Ｃｏ、Ｎｉ、、Ｃｄ、Ａｆｌ 、Ｓｎ、Ａｓ、
Ｂｉ、Ｚｎ、Ｌａ、Ｃｅ、Ｓｒ等が用いられ得る。Ｂａ
ＺｒＯ３、ＢａＳｎＯ３、Ｓ ｒ Ｔ ｉ ０３ Ｂ
ａ Ｔ ｉ ０２等も用いられ得る。Note that a small amount of sintering aid can be added during the manufacturing process. Sintering aids include Zr, Mg, Sc,
Hf, Th, W, Nb, Ta, Cr, Mo, Ti, Mn
, Fe, Co, Ni, , Cd, Afl, Sn, As,
Bi, Zn, La, Ce, Sr, etc. may be used. Ba
ZrO3, BaSnO3, S r T i 03 B
a T i 02 etc. may also be used.
本発明の第１工程において、沈澱体の仮焼温度は７００
℃より低いと凝集が生じ、１３００℃を越えると粉末粒
子が粗大化する。In the first step of the present invention, the calcination temperature of the precipitate is 700
If the temperature is lower than 1300°C, agglomeration occurs, and if the temperature exceeds 1300°C, the powder particles become coarse.
また第２工程において、仮焼温度は、固相反応がほぼま
たは完全に完了する最低温度以上で、顕著な粒子成長が
生じない最高温度範囲内であることが必要で、７００℃
〜１３００℃が望ましい。In addition, in the second step, the calcination temperature must be at least the minimum temperature at which the solid phase reaction is almost or completely completed, and within the maximum temperature range at which significant particle growth does not occur, and is 700°C.
~1300°C is desirable.
第３工程における焼成温度は、１２００℃より低いと全
体の焼結が不充分であり、１７００℃を越えると粒子が
粗大化したり、構成成分の揮発が起きる。If the firing temperature in the third step is lower than 1200°C, the entire sintering will be insufficient, and if it exceeds 1700°C, the particles will become coarse or the constituent components will volatilize.
［作用効果］
しかして本発明では、第１工程で極めて分散性のよいサ
ブミクロン級の変成原料粉末を得、これと他の原料粉末
を混合して目的とする組成物原料となし、これを焼成す
ることで、緻密で、誘電率およびＱ値の高いＢ ａ （
Ｚ ｎ １７３ Ｍ ｅ ２／３ ＞ ０３系セラミッ
クスを得ることができ、誘電体共振器材料として好適に
使用することができる。[Operation and Effect] According to the present invention, a submicron grade modified raw material powder with extremely good dispersibility is obtained in the first step, and this is mixed with other raw material powders to obtain the desired composition raw material. By firing, B a (
Z n 173 M e 2/3 > 03 series ceramics can be obtained and suitably used as a dielectric resonator material.
［実施例］
塩化バリウム水溶液（１、６４１／１Ｔｌｏρ 濃度）
８００ＣＣと、塩化亜鉛水溶液（１、８，１１／ｍｏ、
ｌｌ濃度）９００ｃｃＬを混合した。この混合水溶液を
、６Ｎ−アンモニア水１ｇ中にこれを攪拌し２＋
つつ徐々に添加して、Ｂａ、 とＺｎ２＋ の水酸化
物共沈体を得た。これを洗浄、乾燥した後、１１００℃
で仮焼してＢａＺｎＯ２粉末を得た。[Example] Barium chloride aqueous solution (1,641/1Tloρ concentration)
800CC and zinc chloride aqueous solution (1, 8, 11/mo,
11 concentration) was mixed with 900 ccL. This mixed aqueous solution was gradually added to 1 g of 6N ammonia water while stirring to obtain a hydroxide coprecipitate of Ba and Zn. After washing and drying this, 1100℃
The powder was calcined to obtain BaZnO2 powder.
上記により得られた粉末１０ｇと、市販のＢａＣＯ３粉
末１６．８１６ｇ （０，０８５２ｍｏＩＪ）、Ｎｂ２
Ｏ５粉末１１．３２４ｇ （０，０４２６ｍ０」）とを
、ボールミルで一昼夜混合した後、１０００℃で１時間
仮焼してＢａ （Ｚｎ１／３ Ｎｂ２／３ ） ０３粉
末を作成した。平均粒径は０．４μｍであった。10 g of the powder obtained above, 16.816 g (0,0852 moIJ) of commercially available BaCO3 powder, and Nb2
11.324 g (0,0426 m0'') of O5 powder were mixed in a ball mill overnight and then calcined at 1000° C. for 1 hour to create Ba (Zn1/3 Nb2/3) 03 powder. The average particle size was 0.4 μm.
得られた粉末を１ｔ／ａ１１で成形したダブレットを大
気中で、１４００℃で２時間焼成しな。A doublet formed by molding the obtained powder at 1 t/a11 was fired at 1400° C. for 2 hours in the air.
得られたセラミックス焼結体の密度、９ＧＨｚにおける
誘電率、Ｑ値を下表に示す。The density, dielectric constant at 9 GHz, and Q value of the obtained ceramic sintered body are shown in the table below.
［比較例］
市販のＢａＣＯ３、ＺｎＯ５Ｎｂ２０５粉末をＢａ（Ｚ
ｎ１／３Ｎｂ２／３）０３の組成となるように、Ｂ ａ
ＣＯ３を２５．２２４ｇ （０，１２７８ｍｏρ＞、
ＺｎＯを３．４６７ｇ ＜０．０４２６ｍ ｏｗ！ ）
、Ｎ ｂ２０５を１１．３２４ｇ ＜０．０４２６ｍ
ｏｊ！ ）配合し、ボールミルで一昼夜混合した後１２
００℃で１時間仮焼した。仮焼粉末の平均粒径は約１．
２μｍであった。[Comparative example] Commercially available BaCO3, ZnO5Nb205 powder was converted into Ba(Z
B a so that the composition becomes n1/3Nb2/3)03
25.224g of CO3 (0,1278moρ>,
3.467g of ZnO <0.0426m ow! )
, N b205 11.324g <0.0426m
oj! ) and mixed in a ball mill for a day and night 12
It was calcined at 00°C for 1 hour. The average particle size of the calcined powder is approximately 1.
It was 2 μm.
この粉末をＩｔ／ａａで成形し、上記実施例と同じ条件
下で焼成した。This powder was molded to It/aa and fired under the same conditions as in the above example.
得られたセラミックス焼結体の密度、誘電率、Ｑ値を下
表に併記する。The density, dielectric constant, and Q value of the obtained ceramic sintered body are also listed in the table below.
なお、ＭｅとしてＴａを用いた場合も、上記とほぼ同様
の結果が得られた。Note that almost the same results as above were obtained when Ta was used as Me.
このように本発明によるときは、従来法によるよりも緻
密で、高誘電率であり、特にＱ値が格段に高いＢａ （
Ｚｎ１７３ Ｎｂ２／３ ）０３系セラミックスを得る
ことができる。そして本発明で得られたセラミックスは
高いＱ値が要求される誘電体共振器材料として好適に用
いられる。As described above, when using the present invention, Ba (
Zn173 Nb2/3 )03 series ceramics can be obtained. The ceramic obtained according to the present invention can be suitably used as a dielectric resonator material that requires a high Q value.
Claims (1)
＿／＿３）Ｏ＿３系セラミックス（但しＭｅはＮｂおよ
びＴａのいずれか）を製造する方法であって、 （１）Ｂａ以外の少なくとも１成分とＢａの溶液との混
合液、およびＺｎ以外の少なくとも１成分とＺｎの溶液
との混合液のいずれかを作り、該混合液と沈澱形成液と
を混合して共沈体を形成し、乾燥後７００℃〜１３００
℃で仮焼する第１工程、（２）得られた仮焼物粉末と、
目的とする組成の残りの成分の粉末を混合して７００℃
〜１３００℃で焼成する工程、 （３）得られた仮焼物粉末を成形して１２００℃〜１７
００℃で焼成する工程、 とよりなることを特徴とする誘電体共振器材料の製造方
法。[Claims] Ba(Zn_1_/_3Me_2) for dielectric resonator material
_/_3) A method for producing O_3-based ceramics (where Me is either Nb or Ta), comprising: (1) a mixture of at least one component other than Ba and a solution of Ba; and at least one component other than Zn; A mixture of the components and a solution of Zn is prepared, the mixture and a precipitate forming liquid are mixed to form a coprecipitate, and after drying, the mixture is heated at 700°C to 1300°C.
A first step of calcining at °C, (2) the obtained calcined powder,
Mix the powders of the remaining ingredients of the desired composition and heat to 700°C.
a step of firing at ~1300°C, (3) molding the obtained calcined powder to 1200°C ~17
1. A method for manufacturing a dielectric resonator material, comprising: a step of firing at 00°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62125373A JPS63291306A (en) | 1987-05-22 | 1987-05-22 | Manufacture of dielectric resonator material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62125373A JPS63291306A (en) | 1987-05-22 | 1987-05-22 | Manufacture of dielectric resonator material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63291306A true JPS63291306A (en) | 1988-11-29 |
Family
ID=14908525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62125373A Pending JPS63291306A (en) | 1987-05-22 | 1987-05-22 | Manufacture of dielectric resonator material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63291306A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004189589A (en) * | 2002-11-25 | 2004-07-08 | Ngk Spark Plug Co Ltd | Dielectric ceramic composition and dielectric resonator using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61269805A (en) * | 1985-05-23 | 1986-11-29 | 松下電器産業株式会社 | Manufacture of dielectric ceramic for microwave |
-
1987
- 1987-05-22 JP JP62125373A patent/JPS63291306A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61269805A (en) * | 1985-05-23 | 1986-11-29 | 松下電器産業株式会社 | Manufacture of dielectric ceramic for microwave |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004189589A (en) * | 2002-11-25 | 2004-07-08 | Ngk Spark Plug Co Ltd | Dielectric ceramic composition and dielectric resonator using the same |
| JP4494756B2 (en) * | 2002-11-25 | 2010-06-30 | 日本特殊陶業株式会社 | Dielectric ceramic composition and dielectric resonator using the same |
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