JPS63290281A - Plating device - Google Patents
Plating deviceInfo
- Publication number
- JPS63290281A JPS63290281A JP12277987A JP12277987A JPS63290281A JP S63290281 A JPS63290281 A JP S63290281A JP 12277987 A JP12277987 A JP 12277987A JP 12277987 A JP12277987 A JP 12277987A JP S63290281 A JPS63290281 A JP S63290281A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- soln
- tank
- solution
- supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 85
- 239000007921 spray Substances 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000005507 spraying Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005238 degreasing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000000889 atomisation Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 101100493710 Caenorhabditis elegans bath-40 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000005844 autocatalytic reaction Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 102220043690 rs1049562 Human genes 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1617—Purification and regeneration of coating baths
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1683—Control of electrolyte composition, e.g. measurement, adjustment
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、メッキ装置に関するものであり、特にメッキ
溶液補充の際にメッキ溶液の濃度成分のむらの少ないメ
ッキ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plating apparatus, and more particularly to a plating apparatus in which the concentration components of a plating solution are less uneven when replenishing the plating solution.
［従来の技術］
例えは、無電解メッキ処理では、メッキ溶液中のメッキ
成分が被メッキ部材表面に析出することによってメッキ
を行う。従って、メ・ンキ処理を行っていくにつれて、
メッキ溶液中の特定の濃度成分が減少したり、ｐＨが変
化していく。そのため、連続して良好なメッキ処理を行
うには、上記減少する成分やｐＨ調整剤等を含んだ補充
溶液を適時前記メッキ溶液に混合して補給している。[Prior Art] For example, in an electroless plating process, plating is performed by depositing a plating component in a plating solution on the surface of a member to be plated. Therefore, as the coating process is carried out,
A specific concentration component in the plating solution decreases or the pH changes. Therefore, in order to continuously perform a good plating process, a replenishment solution containing the components to be reduced, a pH adjuster, etc., is added to the plating solution at appropriate times.
［発明が解決しようとする問題点］
ところで、メッキ装置ではメッキ厚を一定とする等のた
めにメッキ溶液の液量を常にほぼ一定としている。その
ため、上記補充液は必要成分を高）震度に含んだ溶液を
使用する。その結果、補充液を混入した箇所のメッキ溶
液の特定成分の濃度が高くなり過ぎたり、ｐＨが所定範
囲から外れてしまい、被メッキ材表面以外にメッキ成分
が析出してメッキ溶液が汚れたり、メッキ溶液中の）震
度むらが大きくなって、均一な厚さのメッキ層を形成す
ることができなくなる場合がある。[Problems to be Solved by the Invention] Incidentally, in a plating apparatus, the amount of plating solution is always kept approximately constant in order to maintain a constant plating thickness. Therefore, the above-mentioned replenisher is a solution containing the necessary components at a high seismic intensity. As a result, the concentration of specific components in the plating solution at the location where the replenisher has been mixed becomes too high, the pH goes out of the specified range, plating components precipitate on areas other than the surface of the plated material, and the plating solution becomes dirty. In some cases, the unevenness of the seismic intensity (in the plating solution) becomes large, making it impossible to form a plating layer with a uniform thickness.
［問題点を解決するための手段］
上記問題点を解決するためになされた本発明の要旨は、
メッキ槽中のメッキ溶液に浸した被メッキ部材をメッキ
するメッキ装置であって、上記メッキ溶１夜の液面に補
充溶液を噴霧するメッキ溶液補充部を備えたことを特徴
とするメ・ンキ装置にある。[Means for Solving the Problems] The gist of the present invention, which has been made to solve the above problems, is a plating apparatus for plating a member to be plated immersed in a plating solution in a plating bath, which comprises: The plating device is characterized in that it is equipped with a plating solution replenishing part that sprays a replenishing solution onto the plating solution surface overnight.
［作用コ
本発明では、メッキ溶液補充部にて補充溶液をメッキ溶
液液面に噴霧して補給する。そのため、補充溶液はメッ
キ溶液の広い範囲に同時に分散して供給され、補充箇所
の成分温度が局所的に上昇したり、ｐＨが局所的に所定
範囲を越えることがない。[Operations] In the present invention, the plating solution replenishment section sprays and replenishes the plating solution surface. Therefore, the replenishment solution is simultaneously distributed and supplied over a wide range of the plating solution, and the temperature of the components at the replenishment location does not locally rise or the pH locally exceeds a predetermined range.
［実施例コ
本発明の一実施例を図を用いて説明する。本発明はこれ
に限られるものではなく、その要旨を逸脱しない範囲の
種々の態様のものが含まれる。[Example] An example of the present invention will be described with reference to the drawings. The present invention is not limited to this, but includes various embodiments without departing from the gist thereof.
本実施例は、磁気ディスク基板に下地メッキ処理を行う
無電解メッキ装置に本発明を適用したものである。In this embodiment, the present invention is applied to an electroless plating apparatus that performs base plating on a magnetic disk substrate.
第１図の構成図を用いて本実施例の構成を説明する。The configuration of this embodiment will be explained using the configuration diagram of FIG.
本無電解メッキ装置１０は、被メッキ部材２０であるア
ルミ合金製磁気ディスク基板を支持する支持部材３０が
設けられたメッキ槽４０と、該メッキ槽４０に供給され
るメッキ溶液５０の循環系６０、メッキ溶液５０に補充
溶液を供給する補充系７０とを備える。The present electroless plating apparatus 10 includes a plating tank 40 provided with a support member 30 that supports an aluminum alloy magnetic disk substrate, which is a member to be plated 20, and a circulation system 60 for a plating solution 50 supplied to the plating tank 40. , and a replenishment system 70 that supplies a replenishment solution to the plating solution 50.
メッキ槽４０は、循環系６０から供給されたメ・ンキ溶
液５０を所定温度に加温する発熱体８０を備えた加温槽
９０、前記支持部材３０が設けられメッキ処理が行われ
る主メッキ槽１００、補充系７０により補充溶液を供給
される補給槽１１０とから構成される。メッキ溶液５０
は、先ず、循環系６０から加温槽９０に供給され、次い
で主メッキ槽１００と加温槽９０との壁１２０の上部に
段Ｇ＋られた濾過材１３０を通って、主メッキ槽１００
に供給され、続いて主メッキ槽１００で被メッキ部材２
０のメッキ反応に関与した後、主メッキ槽１００と補給
槽１１０どの壁１４０の下部から補給槽１１０に流れ、
そして補給槽１１０の下部に設けられた排出口１５０か
ら再び循環系６０に戻る。The plating tank 40 includes a heating tank 90 equipped with a heating element 80 that heats the coating solution 50 supplied from the circulation system 60 to a predetermined temperature, and a main plating tank in which the support member 30 is provided and plating processing is performed. 100, and a replenishment tank 110 supplied with replenishment solution by a replenishment system 70. Plating solution 50
is first supplied to the heating tank 90 from the circulation system 60, and then passes through the filter material 130 provided in the upper part of the wall 120 between the main plating tank 100 and the heating tank 90, and then flows into the main plating tank 100.
The material to be plated 2 is then supplied to the main plating tank 100.
After participating in the plating reaction of 0, it flows from the bottom of the wall 140 of the main plating tank 100 and the supply tank 110 to the supply tank 110,
Then, it returns to the circulation system 60 again through the discharge port 150 provided at the bottom of the supply tank 110.
前記メッキ槽４０にメッキ溶液５０を供給する循環系６
０は、ポンプ１６０、フィルター１７０及び分析装置１
８０を備える。前記補給槽１１０の排出口１５０から流
入したメッキ溶液５０は、ポンプ１６０で加圧された後
に、フィルター１７０で濾過され清浄となってから前記
加温槽９０に供給される。又、排出口１５０とポンプ１
６０とを結ぶ管路には、バルブ１９０を介して分析装置
１８０が設けられており、メッキ溶液５０中の各成分が
所定濃度であるか、ｐＨが所定範囲内であるかについて
測定している。この測定は、吸光度分析、違憲、ｐＨメ
ータ等によって行われる。Circulating system 6 for supplying plating solution 50 to the plating tank 40
0 is a pump 160, a filter 170 and an analyzer 1
80. The plating solution 50 flowing from the outlet 150 of the supply tank 110 is pressurized by a pump 160 and then filtered by a filter 170 to become clean before being supplied to the heating tank 90 . In addition, the discharge port 150 and the pump 1
An analyzer 180 is provided in the pipe line connecting the plating solution 50 via a valve 190, and measures whether each component in the plating solution 50 has a predetermined concentration and whether the pH is within a predetermined range. . This measurement is carried out by absorbance analysis, a pH meter, etc.
補充系７０は、補充溶液２００を補給槽１１０上方に設
けられた霧化部２１０で霧状として補給槽１１０のメッ
キ溶液５０液面に噴霧するものであり、補充溶液２００
の組成、温度、量、ｐＨ等は前記循環系６０の分析装置
１８０の測定結果に基づいて決める。この霧化部２１０
として、第１図では、図示しないエアーポンプから供給
される高圧空気を用いたガス噴霧化ノズルを使用してい
るが、これ以外にも圧力ノズル、回転ノズル等が使用で
きる。The replenishment system 70 sprays the replenishment solution 200 in the form of a mist onto the surface of the plating solution 50 in the replenishment tank 110 using an atomizer 210 provided above the replenishment tank 110.
The composition, temperature, amount, pH, etc. of the circulatory system 60 are determined based on the measurement results of the analyzer 180 of the circulation system 60. This atomization section 210
In FIG. 1, a gas atomization nozzle using high-pressure air supplied from an air pump (not shown) is used, but other pressure nozzles, rotary nozzles, etc. can also be used.
本無電解メッキ装置１０を用いた磁気ディスク基板の下
地メッキについて説明する。Underlying plating of a magnetic disk substrate using the present electroless plating apparatus 10 will be explained.
先ず、被メッキ部材２０となる磁気ディスク基板を、へ
〇−Ｍｇ系のアルミニウム合金（例えば、ＪＩＳ規格：
Ａ−５０８６）を素材とし、板厚１．２５ｍｍ、外径
９５ｍｍ、内径２５ｍｍのドーナツ状に形成する。First, a magnetic disk substrate, which will become the member to be plated 20, is made of a 〇-Mg-based aluminum alloy (for example, JIS standard:
A-5086) is used as a material and formed into a donut shape with a plate thickness of 1.25 mm, an outer diameter of 95 mm, and an inner diameter of 25 mm.
次に、この被メッキ部材２０に非シリカ系のアルカリ性
の脱脂溶液を用いた脱脂処理、イオン交換水を用いた水
洗処理、非シリカ系の酸性脱脂溶液を用いた脱脂処理を
順次施す。Next, this member 20 to be plated is sequentially subjected to a degreasing process using a non-silica-based alkaline degreasing solution, a washing process using ion-exchanged water, and a degreasing process using a non-silica-based acidic degreasing solution.
続いて、この被メッキ部材２０を、ＮａＯＨでｐＨ１４
，０に調製した３０．Ｏｇ／ＱのＮａ２Ｚｎｏ２の溶液
中に浸して次式で示される亜鉛置換処理を行う。Subsequently, this member to be plated 20 is diluted to pH 14 with NaOH.
, 30. prepared to 0. It is immersed in a solution of Og/Q Na2Zno2 and subjected to zinc replacement treatment as shown by the following formula.
３Ｎａ２ＺｎＯ２＋２ＡＱ＋２８２０
−＋２ＮａＡ（１）０２＋ｂ
次に、被メッキ部材２０を、水洗した後に硝酸溶液で酸
処理して亜鉛置換膜を溶解除去し、続いて、再度、水洗
した後に、亜鉛置換処理を再度施して、置換膜をより緻
密な状態にする。3Na2ZnO2+2AQ+2820 -+2NaA(1)02+b Next, the member to be plated 20 was washed with water and then acid-treated with a nitric acid solution to dissolve and remove the zinc substitution film.Subsequently, after washing with water again, the zinc substitution treatment was performed again. , to make the displacement film more dense.
そして、水洗処理した後に、本実施例の無電解メッキ装
置１０を用いて無電解Ｎ１−Ｐメッキ処理を行う。この
処理は、被メッキ部材２０を支持部材３０に取り付け、
メッキ槽４０のＮ１−Ｐメッキ溶液５０中に数分間回転
させながら浸し、無電解メッキ法により、亜鉛皮膜表面
上に２５ｕｍ程度のＮ１−Ｐ皮膜を形成する。このＮ１
−Ｐメッキ溶液５０の濃度成分は、以下に示され、ｐＨ
４，６にしたものを液温８５℃にして使用する。After washing with water, electroless N1-P plating is performed using the electroless plating apparatus 10 of this embodiment. This process involves attaching the member to be plated 20 to the support member 30,
It is immersed in the N1-P plating solution 50 in the plating bath 40 while rotating for several minutes to form an N1-P film of about 25 um on the surface of the zinc film by electroless plating. This N1
The concentration components of the -P plating solution 50 are shown below, and the pH
Use the liquid at 4 and 6 at a temperature of 85°C.
Ｎ１５Ｏａ・６Ｈ２０・・・１３．００ｇ／（２ＫＮａ
ＣＡＨａＯｓ ◆４Ｈ２０−２８，２８ｇ／ＱＮａＰＨ
２０２争 Ｈ２０＝・ １３． ２５ｇ／ＱＮ８４０Ｈ
＝−７０ｍＯ／（１！
本無電解メッキ反応は、次式により表される。N15Oa・6H20...13.00g/(2KNa
CAHaOs ◆4H20-28, 28g/QNaPH
202nd race H20=・ 13. 25g/QN840H
=-70mO/(1! This electroless plating reaction is expressed by the following formula.
Ｎ１２＋＋Ｈ２ＰＯ２２−＋Ｈ２０
→Ｎ ｉ ＋８２ＰＯ３−＋２８＋
この反応では、還元剤として次亜リン酸を用いたＮｉの
自己触媒反応であり、Ｎｉの存在下にて活発に起こる。N12++H2PO22-+H20 →N i +82PO3-+28+ This reaction is an autocatalytic reaction of Ni using hypophosphorous acid as a reducing agent, and actively occurs in the presence of Ni.
なお、この副反応としてＰが析出し、Ｎ１−Ｐ皮膜には
、ＰがＮｉ中に８〜１２％程度含有される。Note that P is precipitated as a side reaction, and the N1-P film contains about 8 to 12% of P in Ni.
この反応が進行するとメッキ溶液５０中のＮｉイオンが
消費されるため、Ｎｉ塩濃度、ｐＨ等が変化してくる。As this reaction progresses, Ni ions in the plating solution 50 are consumed, so the Ni salt concentration, pH, etc. change.
分析装置１８０で、メッキ溶液５０の濃度成分、ｐＨの
変化が所定以上となった場合には、補給の必要な成分濃
度を周知の当量計算により求め、必要量の濃度成分を服
務補充溶液２００を前記補充系７０によりメッキ溶液５
０液面に噴霧することにより補給する。In the analyzer 180, when the concentration components and pH of the plating solution 50 change more than a predetermined value, the concentration of the component that needs to be replenished is determined by a well-known equivalent calculation, and the necessary amount of the concentration component is added to the service replenishment solution 200. The plating solution 5 is supplied by the replenishment system 70.
Replenish by spraying on the 0 liquid level.
このようにして、本メッキ装置１０を用い、アルミニウ
ム合金製の磁気ディスク基板にＮ１−Ｐの下地メッキ処
理を行ったところ、従来の無電解メッキ装置のように、
高濃度の補充溶液を流し込む場合に比べ、被メッキ部材
以外の箇所におけるメッキ成分の析出、メッキ厚のむら
が非常に少なくなった。そのため、不用なメッキ成分の
析出によるメッキ溶液５０の汚れが抑制されて、メッキ
溶液５０の寿命が長くなった。また、メ・ンキ厚のむら
が少ないために、磁気ディスク基板として非常に好まし
いものが製造できた。尚、第１図では、霧化部２１０を
１つしか用いてないが、複数の霧化部を用いて数種の補
充溶液を補給するようにしてもよい。例えは、Ｎｉ塩、
錯化剤及びｐＨ調整剤を含む補充溶液と、還元剤を含む
補充溶液との２種の補充溶液を用い、各々異なる霧化部
で霧化するようにしてもよい。In this way, when the present plating apparatus 10 was used to perform the N1-P base plating treatment on an aluminum alloy magnetic disk substrate, it was found that, like the conventional electroless plating apparatus,
Compared to the case of pouring a high-concentration replenishment solution, precipitation of plating components and unevenness in plating thickness at locations other than the plated member were significantly reduced. Therefore, contamination of the plating solution 50 due to precipitation of unnecessary plating components is suppressed, and the life of the plating solution 50 is extended. In addition, since there was little unevenness in coating thickness, a highly desirable magnetic disk substrate could be manufactured. Although only one atomizing section 210 is used in FIG. 1, a plurality of atomizing sections may be used to supply several types of replenishment solutions. For example, Ni salt,
Two types of replenishment solutions, one containing a complexing agent and a pH adjuster and the other containing a reducing agent, may be used and atomized in different atomization sections.
［発明の効果］
本発明の無電解メッキ装置は、上述の如く、補充溶ン夜
をメッキ溶液液面に噴霧することにより補給する。[Effects of the Invention] As described above, the electroless plating apparatus of the present invention replenishes the plating solution by spraying the replenishing solution onto the surface of the plating solution.
そのため、補充溶）夜の補給の際に生じるメッキ溶ン夜
の）震度及びｐＨのむらが非常に小さくなる。Therefore, the unevenness of seismic intensity and pH that occur during night replenishment during plating melt replenishment becomes extremely small.
即ち、補充液を混入した箇所のメッキ溶液の成分濃度が
高くなり過ぎることがなく、又、ｐＨが所定範囲外とな
ることがないので、被メッキ材表面以外にメッキ成分が
析出することはなく、また、メッキ溶液中の成分）農産
むらが大きくなることがないので、均一な厚さのメッキ
層を形成することができろ。In other words, the component concentration of the plating solution at the location where the replenisher is mixed will not become too high, and the pH will not fall outside the specified range, so the plating components will not precipitate outside the surface of the plated material. In addition, since the ingredients in the plating solution do not cause large unevenness, it is possible to form a plating layer with a uniform thickness.
第１図は本発明の一実施例の構成図である。 FIG. 1 is a block diagram of an embodiment of the present invention.
Claims (1)
するメッキ装置であって、 上記メッキ溶液の液面に補充溶液を噴霧するメッキ溶液
補充部を備えたことを特徴とするメッキ装置。[Claims] A plating device for plating a member to be plated immersed in a plating solution in a plating bath, characterized by comprising a plating solution replenisher that sprays a replenisher solution onto the surface of the plating solution. plating equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12277987A JPS63290281A (en) | 1987-05-20 | 1987-05-20 | Plating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12277987A JPS63290281A (en) | 1987-05-20 | 1987-05-20 | Plating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63290281A true JPS63290281A (en) | 1988-11-28 |
Family
ID=14844404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12277987A Pending JPS63290281A (en) | 1987-05-20 | 1987-05-20 | Plating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63290281A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104342723A (en) * | 2013-07-31 | 2015-02-11 | 南昌欧菲光科技有限公司 | Electroforming device |
| CN106591931A (en) * | 2016-12-05 | 2017-04-26 | 广东石油化工学院 | Casing pipe heating-type plastic electroplating tank |
| IT201700012608A1 (en) * | 2017-02-06 | 2018-08-06 | Arnaldo Morganti | Improved anti-friction mechanical components, coating process and plant tank for their manufacture |
-
1987
- 1987-05-20 JP JP12277987A patent/JPS63290281A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104342723A (en) * | 2013-07-31 | 2015-02-11 | 南昌欧菲光科技有限公司 | Electroforming device |
| CN106591931A (en) * | 2016-12-05 | 2017-04-26 | 广东石油化工学院 | Casing pipe heating-type plastic electroplating tank |
| CN106591931B (en) * | 2016-12-05 | 2018-07-03 | 广东石油化工学院 | A kind of casing heated type plastic cement electroplating bath |
| IT201700012608A1 (en) * | 2017-02-06 | 2018-08-06 | Arnaldo Morganti | Improved anti-friction mechanical components, coating process and plant tank for their manufacture |
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