JPS63284897A - Conductive plastic structure - Google Patents
Conductive plastic structureInfo
- Publication number
- JPS63284897A JPS63284897A JP11953487A JP11953487A JPS63284897A JP S63284897 A JPS63284897 A JP S63284897A JP 11953487 A JP11953487 A JP 11953487A JP 11953487 A JP11953487 A JP 11953487A JP S63284897 A JPS63284897 A JP S63284897A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plastic structure
- conductive
- conductive film
- base film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004033 plastic Substances 0.000 title claims abstract description 25
- 229920003023 plastic Polymers 0.000 title claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 10
- 238000000465 moulding Methods 0.000 claims abstract description 7
- 239000012790 adhesive layer Substances 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- 239000002991 molded plastic Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 241000726103 Atta Species 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14827—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles using a transfer foil detachable from the insert
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
このま発明は、導電性プラスチック構造体に関するもの
である。さらに詳しくは、この発明は、プラスチック構
造体のモールド成形と同時に該構造体の表面に金属・無
機物の導電性薄膜を密着させた導電性プラスチック構造
体に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a conductive plastic structure. More specifically, the present invention relates to a conductive plastic structure in which a conductive thin film of a metal or inorganic material is closely adhered to the surface of the structure at the same time as the plastic structure is molded.
（背景技術）
電機・電子機器の筐体、ハウジング等に導電性の塗料を
塗布したり、導電性薄膜をラミネートして、帯電防止、
電磁波シールド効果を実現しようとする試みが行われて
きている。(Background technology) Applying conductive paint to the casings and housings of electrical and electronic equipment, or laminating conductive thin films, can prevent static electricity.
Attempts have been made to achieve an electromagnetic shielding effect.
しかしながら、従来の方法では、框体、あるいはハウジ
ング等のプラスチック構造体の形状が平板などの比較的
単純なものに限られており、またこれらへの導電性膜の
密着性は悪く、剥離しやすいという欠点があった。However, in conventional methods, the shape of plastic structures such as frames or housings is limited to relatively simple shapes such as flat plates, and the adhesion of the conductive film to these is poor and it is easy to peel off. There was a drawback.
さらにまた、従来、導電性の塗料やラミネート薄膜とし
て用いられているものは絶縁性の基材やバインダーの使
用を不可欠としているため、電導度が十分ではないとい
う欠点があった。Furthermore, conventionally used conductive paints and laminate thin films require the use of insulating base materials and binders, which has the disadvantage of insufficient conductivity.
このなめ、これまでの試みからは、実用に供することの
できるプラスチック構造体用の導電性膜は実現されてい
ないのが実状である。Because of this, the actual situation is that past attempts have not produced a conductive film for plastic structures that can be put to practical use.
（発明の目的）
この発明は、以上の通りの事情を鑑みてなされたもので
あり、従来の導電性膜の欠点を改善し、複雑な形状の構
造物であっても十分な電導度を与えることのでき、密着
強度が大きく、その製造も容易な、新しい導電性膜を提
供することを目的としている。(Objective of the Invention) This invention was made in view of the above-mentioned circumstances, and aims to improve the drawbacks of conventional conductive films and provide sufficient conductivity even to structures with complex shapes. The purpose of the present invention is to provide a new conductive film that has high adhesion strength and is easy to manufacture.
さらに詳しくは、この発明は、高性能な導電性プラスチ
ック構造体を提供することを目的としている。More specifically, the present invention aims to provide a high performance conductive plastic structure.
（発明の開示）
この発明の導電性プラスチック構造体は、上記の目的を
実現するために、ベースフィルム表面に直接または離型
層を介して配設したドライ製膜導電膜をモールド一体成
形したプラスック構造体から該ベースフィルムを剥離し
てなることを特徴としている。(Disclosure of the Invention) In order to achieve the above object, the conductive plastic structure of the present invention is a plastic structure in which a dry film-formed conductive film is integrally molded on the surface of a base film, either directly or via a release layer. It is characterized in that the base film is peeled off from the structure.
添付した図面に沿ってこの発明の導電性ブスチック構造
体について説明する。The conductive plastic structure of the present invention will be explained with reference to the attached drawings.
第１図は、この発明の導電性プラスチック構造体につい
て例示している。FIG. 1 illustrates the conductive plastic structure of the present invention.
モールド成形したプラスチック構造体である筐体（１）
の裏面には、導電膜（２）が密着している。この導電Ｊ
ｉｇ（２＞と筐体（１）との間には接着剤層（３）が介
在している。Housing (1) which is a molded plastic structure
A conductive film (2) is in close contact with the back surface of the . This conductive J
An adhesive layer (3) is interposed between the ig (2>) and the housing (1).
導電膜（２）をその表面にドライ製膜によって配設して
いたベースフィルム（４）は剥離される。The base film (4) on which the conductive film (2) has been disposed by dry film formation is peeled off.
この例においては、導電１（２）とベースフィルム（４
）との間にはｉ！ｌ型Ｍ（５）が介在しており、この離
型層（５）は、導電膜（２）の表面に残存し、保護膜し
ても機能してもいる。In this example, conductive 1 (2) and base film (4
) is between i! An l-type M (5) is present, and this release layer (5) remains on the surface of the conductive film (2) and also functions as a protective film.
この例で用いている接着剤層（３）および離型層（５）
は必ずしも必要なものではない、導電膜（２）のプラス
チック構造体（１）への密着性と、ベースフィルム（４
）からの剥離性を考慮してその使用を選択すればよい。Adhesive layer (3) and release layer (5) used in this example
are not necessarily required, but the adhesion of the conductive film (2) to the plastic structure (1) and the base film (4)
), its use may be selected in consideration of its releasability.
この第１図に示した例を、プロセスとして示したものが
第２図である。この第２図によると、（ａ）ベースフィ
ルム（４）には離型層（５）を介して導電膜（２）をド
ライ製膜によって配設する。FIG. 2 shows the example shown in FIG. 1 as a process. According to FIG. 2, (a) a conductive film (2) is provided on a base film (4) via a release layer (5) by dry film forming.
ベースフィルムには格別の限定はないが、ポリエステル
、ナイロン、ポリアミド、ポリイミド等の比較的耐熱性
の大きいフィルムが好適に用いられる。その厚さは、２
５〜７５μｍ程度とすることができる。Although there are no particular limitations on the base film, films with relatively high heat resistance such as polyester, nylon, polyamide, polyimide, etc. are preferably used. Its thickness is 2
It can be about 5 to 75 μm.
離型層（５）としては、熱硬化性または、ＵＶ硬化性の
樹脂を用いることができる。あるいはまた、Ｓ ｉ ０
２ 、Ｔ ｉ ０２などの透明無機薄膜を用いることも
できる０、これらは、導電膜（２）の保護膜としても機
能する。As the release layer (5), thermosetting or UV curable resin can be used. Alternatively, S i 0
Transparent inorganic thin films such as 2 and T i 02 can also be used, and these also function as a protective film for the conductive film (2).
導電膜（２）は、ドライ製膜法によって作成する。この
方法としては、真空蒸着、スパッタリング、イオンブレ
ーティング、プラズマビームデポジションなどがある。The conductive film (2) is created by a dry film forming method. Examples of this method include vacuum evaporation, sputtering, ion blasting, and plasma beam deposition.
密着強度、製膜速度からみて、プラズマビームデポジシ
ョンが特に好ましい方法である。Plasma beam deposition is a particularly preferred method in terms of adhesion strength and film forming speed.
このプラズマビームデポジションの方法は、圧力勾配型
プラズマガンを用い、１０−５〜１０”４Ｔｏｒｒ程度
の真空中でプラズマ放電させ、プラズマビームを放射さ
せて製膜するもので、金属、無機物、有機物等の薄膜形
成法として優れたものである。この方法による場合には
、所要の薄膜を、基板の移動速度
１０ｍ／分以上の高速でも作成できる。This plasma beam deposition method uses a pressure gradient plasma gun to generate a plasma discharge in a vacuum of about 10-5 to 10''4 Torr and radiates a plasma beam to form a film. This method is excellent as a method for forming thin films such as the above.In the case of this method, a desired thin film can be formed even at a high speed of movement of the substrate of 10 m/min or more.
導電膜（２）は、＃１（Ｃｕ）、アルミニウム（ＡＩ）
、ニッケル（Ｎｉ）などの金属、それらの合金はもと
より、酸化インジウム、ＩＴＯなとの無機物であっても
よい。The conductive film (2) is #1 (Cu), aluminum (AI)
, metals such as nickel (Ni), alloys thereof, and inorganic materials such as indium oxide and ITO.
さらに膜厚が必要な場合には、電解メッキ、無電解メッ
キによって金属膜を積層させてもよい。If an even thicker film is required, metal films may be laminated by electrolytic plating or electroless plating.
（ｂ）次いで、硬化性樹脂からなる接着剤１１（３）を
設けて、または設けることなく、このベースフィルム（
４）に導電膜（２）を配設したフィルムを、金型（６）
内に入れ、供給通路（７）から供給した溶融ブスチック
を用いてモールド成形する。(b) Next, this base film (
4) The film with the conductive film (2) placed on it is placed in the mold (6).
and molded using the molten plastic supplied from the supply passage (7).
射出成形、押出成形、その他適宜な手段によって成形す
ることができる。It can be molded by injection molding, extrusion molding, or other appropriate means.
成形と同時に導電膜（２）は、成形されたプラスチック
構造体（１）に密着する。At the same time as molding, the conductive film (2) comes into close contact with the molded plastic structure (1).
モールドの組成にも格別限定はない、筐体、ハウジング
等に用いられる熱硬化性樹脂、ＵＶ硬化性樹脂、ＦＲＰ
などの、さらにはエンジニアリングプラスチックの適宜
なものが用いられる。熱可塑性であってもよい。There is no particular limitation on the composition of the mold; thermosetting resins, UV curable resins, FRP used for cases, housings, etc.
Further, suitable engineering plastics such as, etc., may be used. It may also be thermoplastic.
（Ｃ）成形の終了後に、ベースフィルム（４）を剥離す
る。プラスチック構造体の表面には、導電膜が強固に付
着する。(C) After completion of molding, the base film (4) is peeled off. A conductive film is firmly attached to the surface of the plastic structure.
次に実施例を示してさらにこの発明について説明する。Next, the present invention will be further explained by showing examples.
実施例１
厚さ３５μｎのＰＥＴフィルム（幅３０ａｍ）の表面に
、８ｘｌＯ−４Ｔｏｒｒの真空下でのプラズマビームデ
ポジションによってＴｉ０ｚ （０，２、ｃｚｍ）お
よびＩＴＯ（０，６，ｃｚｍ）膜を形成した。Example 1 Ti0z (0,2, czm) and ITO (0,6, czm) films were formed on the surface of a 35 μn thick PET film (width 30 am) by plasma beam deposition under a vacuum of 8xlO-4 Torr. did.
ロール・トウ・ロールによる圧力勾配型プラズマガン装
置を用いて、フィルムを移動させながら、プラズマビー
ムデポジションを行った。このＩＴＯ薄膜の上にアクリ
ル系接着剤層を設け、次いで金型に入れて、ＰＰＳ樹脂
の射出成形を行った。Plasma beam deposition was performed while moving the film using a roll-to-roll pressure gradient plasma gun device. An acrylic adhesive layer was provided on this ITO thin film, and then placed in a mold to perform injection molding of PPS resin.
ＰＰＳ樹脂成形体の表面からＰＥＴフィルムを剥藺して
ＩＴＯ導電膜を有するＰＰＳｍ遺物を得た。A PPSm relic having an ITO conductive film was obtained by peeling off the PET film from the surface of the PPS resin molding.
工Ｔｏｒｇ４ノ抵抗は、４０ Ｇ ／ 口”Ｃ” アッ
タ。The resistance of Torg4 is 40 G/mouth "C" Atta.
実施例２
実施例１で制作したＰＥＴ／ＩＴＯフィルムにさらに電
解メッキで１０μｍの銅薄膜を配設し、金型に装入して
ガラス繊維フィラー入りポリエステル樹脂により射出成
形を行った。Example 2 A 10 μm thin copper film was further provided on the PET/ITO film produced in Example 1 by electrolytic plating, and the film was placed in a mold and injection molded using a polyester resin containing glass fiber filler.
モールド成形体表面に、銅およびＩＴＯからなる導電膜
が形成された。A conductive film made of copper and ITO was formed on the surface of the molded body.
（発明の効果）
この発明により、生産性良く、高品質の導電性プラスチ
ック構造体が提供される。帯電防止、電磁波シールド効
果に優れた導電性プラスチック構造体が得られる。(Effects of the Invention) The present invention provides a highly productive and high quality conductive plastic structure. A conductive plastic structure with excellent antistatic and electromagnetic wave shielding effects can be obtained.
第１図は、この発明の一例を示した断面図である。
第２図（ａ）（ｂ）（ｃ）は、この発明のプロセスを示
した工程図である。
１・・・プラスチック構造体、 ２・・・導電膜、３・
・・接着剤層、 ４・・・ベースフィルム、５・・・離
型層、 ６・・・金型、 ７・・・供給通路。
代理人 弁理士 西 澤 利 失策 １
図FIG. 1 is a sectional view showing an example of the present invention. FIGS. 2(a), 2(b), and 2(c) are process diagrams showing the process of this invention. DESCRIPTION OF SYMBOLS 1... Plastic structure, 2... Conductive film, 3...
...adhesive layer, 4...base film, 5...mold release layer, 6...mold, 7...supply passage. Agent Patent Attorney Toshi Nishizawa Mistake 1
figure
Claims (3)
配設したドライ製膜導電膜をモールド一体成形したプラ
スチック構造体から該ベースフィルムを剥離してなるこ
とを特徴とする導電性プラスチック構造体。(1) A conductive plastic structure characterized by being formed by peeling off a base film from a plastic structure integrally molded with a dry film-formed conductive film disposed directly or via a release layer on the surface of the base film. .
許請求の範囲第（１）項記載の導電性プラスチック構造
体。(2) The conductive plastic structure according to claim (1), which is formed by providing an adhesive layer on a conductive film and molding it.
成した特許請求の範囲第（１）項記載の導電性プラスチ
ック構造体。(3) The conductive plastic structure according to claim (1), wherein the conductive film is formed by plasma beam deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11953487A JPS63284897A (en) | 1987-05-15 | 1987-05-15 | Conductive plastic structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11953487A JPS63284897A (en) | 1987-05-15 | 1987-05-15 | Conductive plastic structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63284897A true JPS63284897A (en) | 1988-11-22 |
Family
ID=14763664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11953487A Pending JPS63284897A (en) | 1987-05-15 | 1987-05-15 | Conductive plastic structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63284897A (en) |
-
1987
- 1987-05-15 JP JP11953487A patent/JPS63284897A/en active Pending
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