JPS6328357B2 - - Google Patents
Info
- Publication number
- JPS6328357B2 JPS6328357B2 JP6261781A JP6261781A JPS6328357B2 JP S6328357 B2 JPS6328357 B2 JP S6328357B2 JP 6261781 A JP6261781 A JP 6261781A JP 6261781 A JP6261781 A JP 6261781A JP S6328357 B2 JPS6328357 B2 JP S6328357B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- area
- light emitting
- junction
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 6
- 238000000605 extraction Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- -1 GaAlAs Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Description
【発明の詳細な説明】
本発明は発光ダイオードに係るもので、とくに
高輝度の発光が得られる発光ダイオードに関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light emitting diode, and particularly to a light emitting diode that can emit light with high brightness.
GaAs、GaAlAs、GaPなどの−族化合物
半導体或いはCdTeなどの−族化合物半導体
結晶を半導体材料とし、Pn接合を形成した発光
ダイオード（以下LEDと略す）は表示を始めと
して種々の分野に使用されている。そのような
LEDは従来第１図に示すような構成になつてい
るのが普通である。すなわち、pn接合３をもつ
半導体結晶２からなるLEDは、たとえばTO−３
などの金属性容器の基体７に裏面がオーミツク接
触のための電極を介して固着されている。光を取
り出す表面側では電極４の適当な個所に発光した
光を取り出す窓１を発光面として設け、金属性電
極４には金などのリード線６がボンデイングなど
によつて固着されている。第１図には固着領域は
５として示してある。このようなLEDに順方向
電流を流して発光させた時、結晶内ではPn接合
３の全面で発光するのであるが、一方、外部に取
り出される発光はLED表面に形成された発光面
としての窓１からのみ放出される構造になつてい
るのである。 Light-emitting diodes (hereinafter referred to as LEDs), which use - group compound semiconductors such as GaAs, GaAlAs, and GaP or - group compound semiconductor crystals such as CdTe as semiconductor materials and form Pn junctions, are used in various fields including displays. There is. like that
Conventionally, LEDs usually have a configuration as shown in Figure 1. That is, an LED made of a semiconductor crystal 2 having a pn junction 3 is, for example, a TO-3
The back surface is fixed to the base 7 of a metal container such as a metal container through an electrode for ohmic contact. On the surface side from which light is extracted, a window 1 for extracting emitted light is provided at a suitable location of the electrode 4 as a light emitting surface, and a lead wire 6 made of gold or the like is fixed to the metal electrode 4 by bonding or the like. The anchoring area is shown as 5 in FIG. When a forward current is applied to such an LED to cause it to emit light, the light is emitted from the entire surface of the Pn junction 3 within the crystal, but on the other hand, the light emitted to the outside is emitted from the window formed on the surface of the LED as a light emitting surface. The structure is such that it is emitted only from 1.
このような構造をもつ従来のLEDでは、以下
に述べる欠点ないし問題点を有していた。すなわ
ち、上記した構造のため、電極の直下で発光して
いる光は窓から放出されにくくLEDの実効的な
取り出し効率を低くしていた。また、電極にはリ
ード線などを固着させねばならないので、その固
着領域および電極はある程度の面積をもつてしま
う。従つてLED自体を小さく設計する場合、或
いは発光した光を取り出す窓を小さくし、たとえ
ば100μｍ角以下にするような場合には発光放出
面積よりも電極面積の方が大きくなり、光の取り
出し効率が非常に低下してしまうのである。 Conventional LEDs with such a structure have the following drawbacks or problems. That is, because of the above structure, the light emitted directly below the electrode is difficult to be emitted from the window, reducing the effective extraction efficiency of the LED. Further, since lead wires and the like must be fixed to the electrodes, the fixed area and the electrodes have a certain area. Therefore, when designing the LED itself to be small, or when making the window for extracting the emitted light small, for example, less than 100 μm square, the electrode area becomes larger than the light emitting area, and the light extraction efficiency decreases. It becomes extremely low.
本発明はこのような従来のLEDの欠点や問題
点を克服し、発光輝度が高く効率の良い構造をも
つLEDを提供するものである。すなわち本発明
は、pn接合を有する発光ダイオードに用いる半
導体結晶の裏面よりPn接合部にかかるまで切り
溝を設けることによつて発光する接合面の面積が
上部の発光取り出し面の面積にほぼ対応するよう
になされた構成を採用するものである。 The present invention overcomes the drawbacks and problems of conventional LEDs and provides an LED with high luminance and efficient structure. That is, the present invention provides a semiconductor crystal used in a light emitting diode having a pn junction, by providing a cut groove from the back surface to the pn junction, so that the area of the junction surface that emits light almost corresponds to the area of the upper light emitting extraction surface. This configuration is adopted.
以下、本発明の１実施例を第２図ないし第３図
を参照して説明する。 Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 2 and 3.
本発明の１実施例を第２図に示す。第２図ａは
LEDの平面図であり、第２図ｂはそのLEDの断
面図である。同図ｂに示したように、LED表面
にある発光面にほぼ対応する領域を区分するよう
にPn接合位置３を超えるような切り溝１０がそ
の裏面に設けてある。発光面に対応する裏面の領
域にはオーミツク接触をもつ電極４′が付着され
ており、他方、切り溝１０によつて区別される表
のリード線固着のための電極に対応する領域には
絶縁物８が付着されている。 One embodiment of the invention is shown in FIG. Figure 2 a is
FIG. 2b is a plan view of the LED, and FIG. 2b is a cross-sectional view of the LED. As shown in Figure b, a groove 10 extending beyond the Pn junction position 3 is provided on the back surface of the LED so as to divide a region substantially corresponding to the light emitting surface on the surface of the LED. An electrode 4' with ohmic contact is attached to the region of the back surface corresponding to the light emitting surface, while an insulating material is attached to the region corresponding to the electrode for fixing the lead wire on the front surface, which is distinguished by the cut groove 10. Object 8 is attached.
このような構造にしたLEDに順方向電流を流
すと第２図ｂに模式的に示したように、電流の方
向は矢印９のように流れる。従つて、発光する接
合部全域の面積と発光を取り出す窓の面積とがほ
ぼ同じで対応した位置に存在するから、素子面積
当りの電流は小さくとも接合面積当りの電流は大
きくなり輝度は上昇すると共に、接合部で発光す
る光は殆ど全部が表面にある発光の取り出し窓か
ら取り出せることになり、実効的な取り出し効率
が格段に大きくできる。 When a forward current is applied to an LED having such a structure, the current flows in the direction of arrow 9, as schematically shown in FIG. 2b. Therefore, the area of the entire junction that emits light and the area of the window that takes out the light are almost the same and exist in corresponding positions, so even if the current per element area is small, the current per junction area is large and the brightness increases. At the same time, almost all of the light emitted at the joint can be extracted from the light emission window on the surface, and the effective extraction efficiency can be greatly increased.
第３図は第２図に示した構造のLEDを一列に
４個配列した場合の実施例である。第３図ａはそ
の平面図を示している。この例では、第１図と同
様に第３図ｂにＸ方向の断面図を示すように、Ｙ
方向に接合部３を超えた切り溝１０を設け発光取
り出し効率をあげるだけでなくLED D1，D2，
D3，D4間の電気的絶縁を良くし別々に発光させ
うるように表の電極を互いに分離し、しかもその
分離性能を良くするために第３図ｃにＹ方向の断
面図を示したように、表面の素子間にもＸ方向に
接合部３を超えた切り溝１０′を設けたものであ
る。 FIG. 3 shows an embodiment in which four LEDs having the structure shown in FIG. 2 are arranged in a row. Figure 3a shows its plan view. In this example, as shown in FIG. 3b, which is a cross-sectional view in the
A cut groove 10 extending beyond the joint 3 in the direction not only increases the light emission efficiency but also improves the efficiency of LED D 1 , D 2 ,
The front electrodes are separated from each other in order to improve the electrical insulation between D 3 and D 4 so that they can emit light separately, and in order to improve the separation performance, a cross-sectional view in the Y direction is shown in Figure 3c. As shown, grooves 10' extending beyond the joint portion 3 in the X direction are also provided between the elements on the surface.
以上の実施例によつて本発明の構成を説明した
が、表面と裏面または裏面に切り溝をいれること
によつて光が取り出される発光面が電流を流して
発光するpn接合面とほぼ同一面積で対応する位
置にあるので、従来のLEDでは電極下の発光し
た光は反射・吸収された形でしか発光面に到達し
ないのに比し、本発明によると全部の光が外部に
放出されるので実効的な取り出し効率が非常に大
きくなるのである。とくに本発明は発光面積が小
さくなつた場合、たとえばボンデイング等による
個着領域の面積とほぼ同程度になつた場合にはそ
の効果が著しくなる。たとえば、従来0.01mm2以下
の発光面面積の場合には、電極面積の関係で取り
出し効率が40％以下であつたものが、本発明によ
り100％近くになり取り出し効率が倍以上に向上
した。 The configuration of the present invention has been explained using the above embodiments, but the light emitting surface from which light is extracted by cutting grooves on the front and back surfaces or on the back surface has approximately the same area as the pn junction surface that emits light by flowing current. Therefore, in conventional LEDs, the light emitted under the electrode reaches the light emitting surface only in the form of reflection and absorption, but with the present invention, all the light is emitted to the outside. Therefore, the effective extraction efficiency becomes very high. In particular, the effect of the present invention becomes remarkable when the light emitting area becomes small, for example, when it becomes approximately the same as the area of the individual bonding area due to bonding or the like. For example, in the case of a light emitting surface area of 0.01 mm 2 or less, the extraction efficiency was conventionally less than 40% due to the electrode area, but according to the present invention, the extraction efficiency was increased to nearly 100%, more than doubling.
また、切り溝を設けたことにより、光が効率よ
く取りだせる効果が得られたばかりでなく電気的
な絶縁も向上したので、第３図に示したような
LEDアレイも性能が向上し小型化できるように
なつた。これによつて従来方法では不可能とされ
た８個／mm以上の微小化したアレイも可能であ
る。又、裏面に設けた切り溝によつて発光部領域
と表面電極部領域とが互いに反対側に区分されて
いるので、互いのスペースが影響し合うことがな
く、小型化及びアレイ化しても発光面積はさほど
小さくならずに済み、リード線の取付けも容易で
ある。 In addition, by providing the grooves, not only was the effect of efficiently extracting light obtained, but also the electrical insulation was improved, so as shown in Figure 3,
LED arrays have also improved in performance and can be made smaller. This makes it possible to create a miniaturized array of 8 or more pieces/mm, which was impossible with conventional methods. In addition, the light emitting area and the front electrode area are separated on opposite sides by the grooves provided on the back surface, so their spaces do not affect each other, and even when miniaturized and arrayed, light emission is maintained. The area does not need to be very small, and lead wires can be easily attached.
本発明のLEDの半導体材料がGaP等のように
透過性材料の場合には、とくに裏面の電極面積を
接合面積より小さくすることによつて輝度を向上
させることができる。また、第２図〜第４図で裏
面の電極面以外の領域には絶縁物が付着されてい
ると述べたが、この絶縁物は酸化物、或いは窒化
物でも良いし、また絶縁性の樹脂でも良い。さら
に絶縁物を付着させず直接TO−３などの容器に
直接付着させてもシヨツトキイ障壁の存在によつ
て絶縁機能を発揮させることもできる。 When the semiconductor material of the LED of the present invention is a transparent material such as GaP, the brightness can be improved especially by making the back electrode area smaller than the bonding area. In addition, although it was mentioned in Figures 2 to 4 that an insulator is attached to the area other than the electrode surface on the back side, this insulator may be an oxide or a nitride, or an insulating resin. But it's okay. Furthermore, even if it is directly attached to a container such as TO-3 without attaching an insulator, the insulation function can be exerted due to the presence of a shot key barrier.
以上、本発明の１実施例について説明したが、
本発明がこれらの実施例に限られないことはいう
までもない。 Although one embodiment of the present invention has been described above,
It goes without saying that the present invention is not limited to these examples.
またこの切り溝の部分に黒色或いは発光色を吸
収する色の樹脂等を充填することで光の迷光を防
ぐ方法、或いは逆に反射させやすい物質を切り溝
面に塗布してより効率をあげる等の方法をとるこ
ともできる。 There are also ways to prevent stray light by filling the cut grooves with black or a resin with a color that absorbs the emitted light, or conversely, to increase efficiency by coating the cut groove surfaces with a substance that tends to reflect. You can also take the following method.
第１図は、従来のLEDの構成を示す立体図で
ある。第２図は、本発明に係る切り溝を設けた構
造としたLEDを示す図であつて、第２図ａは平
面図、第２図ｂはその断面図である。第３図は、
本発明に係る切り溝を設けた構造としたLEDの
アレイであつて、第３図ａは平面図、第３図ｂ及
びｃは断面図である。
１……発光面；３……pn接合位置；４，４′…
…電極；８……絶縁物；１０……切り溝。
FIG. 1 is a three-dimensional diagram showing the configuration of a conventional LED. FIG. 2 is a diagram showing an LED having a structure provided with grooves according to the present invention, in which FIG. 2a is a plan view and FIG. 2b is a cross-sectional view thereof. Figure 3 shows
FIG. 3a is a plan view, and FIGS. 3b and 3c are cross-sectional views of an array of LEDs having a kerf structure according to the present invention. 1... Light emitting surface; 3... pn junction position; 4, 4'...
...electrode; 8...insulator; 10...kerf.
Claims (1)
導体結晶の裏面よりpn接合部にかかるまでの深
さで該半導体結晶の長手方向に形成された切り溝
と、前記半導体結晶の表面よりpn接合部にかか
るまでの深さで前記長手方向と直交する方向に形
成された少なくとも一つの切り溝と、前記半導体
結晶の裏面の前記長手方向の切り溝によつて分割
された片側部分及び他の片側部分に夫々に設けら
れた裏面電極及び絶縁物と、前記半導体結晶の表
面の前記長手方向と直交する方向の切り溝によつ
て分割された複数部分において各々前記裏面電極
及び前記絶縁物に夫々対応する部分に設けられた
発光面窓及び表面電極とを有して成る発光ダイオ
ード。1 A kerf formed in the longitudinal direction of a semiconductor crystal used for a light emitting diode having a pn junction at a depth extending from the back surface of the semiconductor crystal to the pn junction, and a groove extending from the front surface of the semiconductor crystal to the pn junction. at least one kerf formed in a direction perpendicular to the longitudinal direction at a depth of A back electrode and an insulator provided, and a plurality of portions of the surface of the semiconductor crystal divided by grooves in a direction perpendicular to the longitudinal direction, provided at portions corresponding to the back electrode and the insulator, respectively. A light emitting diode comprising a light emitting surface window and a surface electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6261781A JPS57178386A (en) | 1981-04-27 | 1981-04-27 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6261781A JPS57178386A (en) | 1981-04-27 | 1981-04-27 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57178386A JPS57178386A (en) | 1982-11-02 |
| JPS6328357B2 true JPS6328357B2 (en) | 1988-06-08 |
Family
ID=13205451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6261781A Granted JPS57178386A (en) | 1981-04-27 | 1981-04-27 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57178386A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125879A (en) * | 1982-01-21 | 1983-07-27 | Matsushita Electric Ind Co Ltd | Solid element and solid element array |
| JPS6083384A (en) * | 1983-10-14 | 1985-05-11 | Ricoh Co Ltd | Led array light source |
| US4700210A (en) * | 1984-11-21 | 1987-10-13 | American Telephone And Telegraph Company, At&T Bell Laboratories | Asymmetric chip design for LEDS |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52104091A (en) * | 1976-02-27 | 1977-09-01 | Hitachi Ltd | Light-emitting semiconductor |
-
1981
- 1981-04-27 JP JP6261781A patent/JPS57178386A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57178386A (en) | 1982-11-02 |
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