JPS63283171A - Manufacture of pressure transducer - Google Patents
Manufacture of pressure transducerInfo
- Publication number
- JPS63283171A JPS63283171A JP11696987A JP11696987A JPS63283171A JP S63283171 A JPS63283171 A JP S63283171A JP 11696987 A JP11696987 A JP 11696987A JP 11696987 A JP11696987 A JP 11696987A JP S63283171 A JPS63283171 A JP S63283171A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- etching
- forming
- cavity region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 9
- 229920005591 polysilicon Polymers 0.000 abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 238000001259 photo etching Methods 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 102100025873 RNA-binding protein 27 Human genes 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
この発明は、基準圧力室としての空洞領域が基板に一体
化された圧力変換装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of manufacturing a pressure transducer in which a cavity region serving as a reference pressure chamber is integrated into a substrate.
従来の圧力変換装置の製造方法としては、例えば第２図
に示すようなものがある（例えば、第４６回応用物理学
会 学術講演会７７３．１９８５年、に記載）。As a conventional method for manufacturing a pressure transducer, there is a method as shown in FIG. 2, for example (described, for example, in the 46th Japan Society of Applied Physics Academic Conference 773, 1985).
第２図に示す方法は、まず、（ａ）に示すように、シリ
コン基板１１と耐エツチング性のある窒化膜１３との間
に、エツチング速度の比較的速い中間層１２を設け、上
記窒化膜１３に設けた小孔１４を通して、中間層１２と
シリコン基板１１とをエツチングすることにより、（ｃ
）に示すように、空洞領域１５を形成させている。そし
て、その後に上記の小孔１４を塞ぐことによって上記の
空洞領域１５を密閉して基準圧力室とし、また上記の窒
化膜１３をダイアフラム部とするものである。なお、第
２図（ｂ）はエツチング途中の状態を示している。In the method shown in FIG. 2, first, as shown in (a), an intermediate layer 12 having a relatively high etching rate is provided between a silicon substrate 11 and a nitride film 13 having etching resistance. By etching the intermediate layer 12 and the silicon substrate 11 through the small hole 14 provided in the
), a cavity region 15 is formed. Then, by closing the small hole 14, the cavity region 15 is hermetically sealed to form a reference pressure chamber, and the nitride film 13 is used as a diaphragm portion. Note that FIG. 2(b) shows a state in the middle of etching.
しかしながら、上記のような従来の圧力変換装置におけ
る基準圧力室及びダイアフラム部の製造方法においては
、上部に設けた一つの小孔から中間層及び基板のエツチ
ングを行なう方法であるため、エツチング液が接触する
部分が小さいので、空洞領域形成のためのエツチング時
間が長くかかり、任意の空洞領域を形成することが困難
となる。However, in the method of manufacturing the reference pressure chamber and diaphragm part in the conventional pressure transducer as described above, the intermediate layer and substrate are etched through one small hole provided in the upper part, so the etching liquid does not come in contact with the etching solution. Since the area to be etched is small, etching time for forming a cavity region is long, making it difficult to form a desired cavity region.
またその加工精度も十分でなく、更に深い空洞領域の上
部にエツチング用孔を有しているため、空洞領域を密閉
する際に、閉塞用物質が空洞領域に入り込みやすく、そ
のためエツチング用の小孔を塞ぐことが困難である、等
の種々の問題があった。Furthermore, the machining accuracy is not sufficient, and since the etching hole is provided above the deep cavity area, when the cavity area is sealed, the sealing substance tends to enter the cavity area, so the small hole for etching is There were various problems such as it being difficult to close the area.
この発明は、上記のごとき従来技術の問題を解決するこ
とを目的とするものである。The present invention aims to solve the problems of the prior art as described above.
上記の目的を達成するため、本発明においては、基板の
上に第１の薄膜を形成し、該第１の薄膜を選択的にエツ
チングして空洞領域の外形を設定する部分を形成する工
程と、上記第１の薄膜で設定された領域に上記第１の薄
膜と異なる材質からなる第２の薄膜を形成する工程と、
該第２の薄膜を覆うように第３の薄膜を形成し、該第３
の薄膜の上記第１の薄膜の上に位置する部分の一部に複
数の孔を形成する工程と、上記第１及び第３の薄 。In order to achieve the above object, the present invention includes the steps of forming a first thin film on a substrate and selectively etching the first thin film to form a portion that defines the outer shape of the cavity region. , forming a second thin film made of a different material from the first thin film in the area set by the first thin film;
forming a third thin film to cover the second thin film;
forming a plurality of holes in a portion of the thin film located above the first thin film; and the first and third thin films.
膜をマスクとして上記孔を通して上記第２の薄膜をエツ
チングすることによって空洞領域を形成する工程と、上
記の孔を塞ぐように第４の薄膜を形成する工程とによっ
て基準圧力室を形成するように構成している。A reference pressure chamber is formed by forming a cavity region by etching the second thin film through the hole using the film as a mask, and forming a fourth thin film so as to close the hole. It consists of
上記のように構成したことにより、本発明においては、
空洞領域の形状や寸法を第１の薄膜によって正確に設定
することが出来、また、空洞領域のＰｔみも、第２の薄
膜の厚みを変えることによって容易に制御することが出
来る。With the above configuration, in the present invention,
The shape and dimensions of the cavity region can be set accurately by the first thin film, and the Pt content in the cavity region can also be easily controlled by changing the thickness of the second thin film.
また、第２の薄膜をエツチングするための孔を空洞領域
の周辺部に複数個設けているので、孔の閉塞用の第４の
薄膜を設ける際に、空洞領域の中心部と孔との距離を調
節することにより、空洞領域の中心部には全く影響を及
ぼさないようにして孔を閉塞することが出来る。そのた
め、ＣＶＤによって容易にエツチング用の孔を塞ぐこと
が可能となる。Furthermore, since a plurality of holes for etching the second thin film are provided at the periphery of the cavity region, when providing the fourth thin film for closing the holes, the distance between the center of the cavity region and the hole is By adjusting , the hole can be closed without affecting the center of the cavity region at all. Therefore, it becomes possible to easily close the etching holes by CVD.
以下、この発明を図面に基づいて説明する。 The present invention will be explained below based on the drawings.
第１図は、本発明による製造方法の一実施例を示す図で
ある。なお、第１図に示す素子断面図は基板上部の縦方
向寸法を拡大して示しである。FIG. 1 is a diagram showing an embodiment of the manufacturing method according to the present invention. Note that the cross-sectional view of the element shown in FIG. 1 is an enlarged view of the vertical dimension of the upper part of the substrate.
第１図において、まず（ａ）では、シリコン基板１の表
面に酸化膜２を約５００人の厚さに成長させる。なお、
上記工程は省略することも出来る。In FIG. 1, first, in (a), an oxide film 2 is grown on the surface of a silicon substrate 1 to a thickness of about 500 nm. In addition,
The above steps can also be omitted.
次に、（ｂ）では、ＣＶＤを使用して、基板表面に厚さ
約１５００人の窒化膜を成長させ、フォトエツチングに
よって所定のパターン３を形成する。Next, in (b), a nitride film having a thickness of approximately 1,500 nm is grown on the surface of the substrate using CVD, and a predetermined pattern 3 is formed by photoetching.
次に、（ｃ）では、ＣＶＤを使用して、ＰＳＧ膜を約２
．５ｆｌの厚さに形成し、フォトエツチングによって空
洞領域となる部分にＰＳＧ膜４を残す。Next, in (c), CVD is used to deposit a PSG film of about 2
．． The PSG film 4 is formed to have a thickness of 5 fl, and is left in the portion that will become the cavity region by photo-etching.
次に、（ｄ）では、ＣＶＤ法によって、厚さ約３０００
人の窒化膜５を成長させた後、フォトエツチングによっ
て窒化膜３の上部にある窒化膜５に複数の孔７を形成す
る。すなわち、孔７は空洞領域となる部分の周辺部に形
成されることになる０、次に、（ｅ）では、ＨＦ系の溶
液を用い、窒化膜３．５をマスクとして、孔７からＰＳ
Ｇ膜４をエツチングし、空洞領域８を形成する。Next, in (d), a thickness of approximately 3000 mm was obtained using the CVD method.
After growing the nitride film 5, a plurality of holes 7 are formed in the nitride film 5 above the nitride film 3 by photoetching. That is, the hole 7 will be formed in the periphery of the part that will become the cavity region.Next, in (e), using an HF-based solution and using the nitride film 3.5 as a mask, PS is removed from the hole 7.
The G film 4 is etched to form a cavity region 8.
次に、（ｆ）では、減圧ＣＶＤ装置を用い、所定の減圧
下において、ポリシリコン膜６を約３４の厚さに成長さ
せることによって孔７を塞ぐ。それによって空洞領域８
は所定の基準圧に保たれた状態で密封され、これが基準
圧力室９となる。また、上記のポリシリコン膜６の一部
、すなわち基準圧力室９の上に位置する部分がダイアフ
ラム部１０となる。Next, in (f), the hole 7 is closed by growing a polysilicon film 6 to a thickness of about 34 mm under a predetermined reduced pressure using a low pressure CVD apparatus. Thereby the cavity area 8
is sealed while being maintained at a predetermined reference pressure, and this becomes the reference pressure chamber 9. Further, a portion of the polysilicon film 6, that is, a portion located above the reference pressure chamber 9 becomes a diaphragm portion 10.
その後、ダイアフラム部１０にポリシリコン等によるピ
エゾ抵抗等の検出機構を形成することにより、圧力変換
装置が完成する。Thereafter, a detection mechanism such as a piezoresistor made of polysilicon or the like is formed on the diaphragm portion 10 to complete the pressure transducer.
なお、第１図（ｇ）は平面図の一部を示したものであり
、上記（ａ）〜（ｆ）は、（ｇ）におけるＡ−Ａ’部の
断面図を示したものである。In addition, FIG. 1(g) shows a part of a plan view, and the said (a)-(f) shows the sectional view of the AA' part in (g).
また、上記の実施例では、空洞領域のエツチングマスク
として窒化膜を使用した例を示したが、他の薄膜、例え
ばポリＳｉ等を使用することも可能である。Further, in the above embodiment, a nitride film was used as an etching mask for the cavity region, but it is also possible to use other thin films such as poly-Si.
また、空洞領域形成用物質としてＰＳＧを用いた場合を
例示したが、窒化膜やポリシリコン膜等のマスク用の薄
膜とエツチングレートが大きく異なる物質であれば、他
の物質を用いても良い。Although PSG is used as the material for forming the cavity region, other materials may be used as long as the etching rate is significantly different from that of a thin film for a mask such as a nitride film or a polysilicon film.
また、基板としては、シリコンの他に、ガラス、セラミ
ックス等の使用も可能である。In addition to silicon, glass, ceramics, etc. can also be used as the substrate.
上記のごとき本発明の製造法によれば、空洞領域の形状
や寸法を窒化膜３によって正確に設定することが出来、
また、空洞領域の厚みも、ＰＳＧ膜４の厚みを変えるこ
とによって容易に制御することが出来る。According to the manufacturing method of the present invention as described above, the shape and dimensions of the cavity region can be accurately set by the nitride film 3,
Further, the thickness of the cavity region can also be easily controlled by changing the thickness of the PSG film 4.
また、空洞領域形成用のｐ Ｓ Ｇ １７２をエツチン
グするための孔７を空洞領域の周辺部に複数個設けてい
るので、空洞領域の中心部と孔７との距離を適宜調節す
ることにより、孔７の閉塞用のポリシリコン膜６を設け
る際に、ポリシリコン膜６が孔７の真下の部分には入り
込むとしても、空洞領域の中心部には全く影響を及ぼさ
ないようにして孔７を閉塞することが出来る。そのため
、ＣＶＤによって容易にエツチング用の孔を塞ぐことが
可能となる。Furthermore, since a plurality of holes 7 for etching the pSG 172 for forming the cavity region are provided at the periphery of the cavity region, by appropriately adjusting the distance between the center of the cavity region and the holes 7, When providing the polysilicon film 6 for closing the hole 7, even if the polysilicon film 6 enters the part directly below the hole 7, the hole 7 is closed so that it does not affect the center of the cavity area at all. It can be blocked. Therefore, it becomes possible to easily close the etching holes by CVD.
また、本発明の製造法によると、空洞領域のＨみを精度
良く制御できるため、ピエゾ抵抗による圧力検出だけで
なく、空洞領域の上部及び下部を電極として静電容量の
変化を検出する圧力変換装置にも適用することができる
。In addition, according to the manufacturing method of the present invention, since the H level in the cavity region can be controlled with high precision, it is possible to perform not only pressure detection using piezoresistance, but also pressure conversion that detects changes in capacitance using the upper and lower parts of the cavity region as electrodes. It can also be applied to devices.
以上説明したように、この発明によれば、その構成を基
板と耐エツチング性のある薄膜との間におかれたエツチ
ング容易な薄膜を、周辺部に設けた孔を通してエツチン
グすることによって空洞領域を形成する製造方法とした
ため、空洞領域の形成及び密閉が容易となり、また空洞
領域及びダイアフラム部を高精度で形成することが出来
るため、圧力変換装置として高精度化、低コスト化が図
れるという効果が得られる。As explained above, according to the present invention, the hollow region is formed by etching the easily etched thin film placed between the substrate and the etching-resistant thin film through the holes provided in the peripheral portion. Since the manufacturing method is to form a pressure transducer, it is easy to form and seal the cavity area, and the cavity area and diaphragm part can be formed with high precision, which has the effect of achieving high precision and low cost as a pressure transducer device. can get.
第１図は本発明の一実施例の断面図及び平面図、第２図
は従来の空洞領域形成方法の一例図である。
く符号の説明〉
１・・・シリコン基板 ２・・・酸化膜３・・・窒
化膜 ４・・・ＰＳＧ膜５・・・窒化膜
６・・・ポリシリコン膜７・・・エツチング用
の孔 ８・・・空洞領域９・・・基窄圧力室 １
０・・・ダイアフラム部代理人弁理士 中 村 純之
助
４Ｐｌ 矢
矛 １！！！
Ｉニジリフ〉羞主受 ５：寥七１莢２：酸化
咲 ６：不°リシリコー嗅３：豪イ
乙川匙 ７：エ、チ；７゛困）し４：
ＰＳＣ１＠ ８孝ヲ跨り州９：基埠ＦＬ〃宇
１０：り゛イ１フクム４Ｐ
７″２茜FIG. 1 is a sectional view and a plan view of an embodiment of the present invention, and FIG. 2 is an example of a conventional method for forming a cavity region. Explanation of symbols> 1...Silicon substrate 2...Oxide film 3...Nitride film 4...PSG film 5...Nitride film
6... Polysilicon film 7... Hole for etching 8... Cavity region 9... Base pressure chamber 1
0...Diaphragm Department Attorney Junnosuke Nakamura 4Pl Yako 1! ! ! I Nijirif〉Embarrassment 5: Shichichi 1 pod 2: Oxidation bloom 6: Un° Risiriko smell 3: Goi Otogawa spoon 7: E, Chi; 7゛ trouble) Shi 4:
PSC1 @ 8 Takashi Crossing State 9: Motobu FL〃U10: Riii 1 Fukumu 4P 7″2 Akane
Claims (1)
換装置において、少なくとも下記の各工程を有すること
を特徴とする圧力変換装置の製造方法。 基板の上に第１の薄膜を形成し、該第１の薄膜を選択的
にエッチングして空洞領域の外形を設定する部分を形成
する工程と、上記第１の薄膜で設定された領域に上記第
１の薄膜と異なる材質からなる第２の薄膜を形成する工
程と、該第２の薄膜を覆うように第３の薄膜を形成し、
該第３の薄膜の上記第１の薄膜の上に位置する部分の一
部に複数の孔を形成する工程と、上記第１及び第３の薄
膜をマスクとして上記孔を通して上記第２の薄膜をエッ
チングすることによって空洞領域を形成する工程と、上
記の孔を塞ぐように第４の薄膜を形成する工程。[Scope of Claims] A method for manufacturing a pressure transducer in which a hollow region serving as a reference pressure chamber is integrated with a substrate, the method comprising at least the following steps. forming a first thin film on a substrate, selectively etching the first thin film to form a portion for setting the outline of the cavity region; and etching the first thin film into the region set by the first thin film; forming a second thin film made of a different material from the first thin film; forming a third thin film to cover the second thin film;
forming a plurality of holes in a part of the third thin film located above the first thin film; and forming the second thin film through the holes using the first and third thin films as masks. A step of forming a cavity region by etching, and a step of forming a fourth thin film so as to close the hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11696987A JPH0797642B2 (en) | 1987-05-15 | 1987-05-15 | Method for manufacturing pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11696987A JPH0797642B2 (en) | 1987-05-15 | 1987-05-15 | Method for manufacturing pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63283171A true JPS63283171A (en) | 1988-11-21 |
| JPH0797642B2 JPH0797642B2 (en) | 1995-10-18 |
Family
ID=14700237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11696987A Expired - Fee Related JPH0797642B2 (en) | 1987-05-15 | 1987-05-15 | Method for manufacturing pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0797642B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5095401A (en) * | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| US5490034A (en) * | 1989-01-13 | 1996-02-06 | Kopin Corporation | SOI actuators and microsensors |
-
1987
- 1987-05-15 JP JP11696987A patent/JPH0797642B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5095401A (en) * | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| US5490034A (en) * | 1989-01-13 | 1996-02-06 | Kopin Corporation | SOI actuators and microsensors |
| US5493470A (en) * | 1989-01-13 | 1996-02-20 | Kopin Corporation | SOI diaphragm sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0797642B2 (en) | 1995-10-18 |
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