JPS63281008A - Exposing means - Google Patents

Exposing means

Info

Publication number
JPS63281008A
JPS63281008A JP62114457A JP11445787A JPS63281008A JP S63281008 A JPS63281008 A JP S63281008A JP 62114457 A JP62114457 A JP 62114457A JP 11445787 A JP11445787 A JP 11445787A JP S63281008 A JPS63281008 A JP S63281008A
Authority
JP
Japan
Prior art keywords
exposure
lens
wafer
flatness
abnormality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62114457A
Other languages
Japanese (ja)
Inventor
Hiroshi Hashimoto
宏 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62114457A priority Critical patent/JPS63281008A/en
Publication of JPS63281008A publication Critical patent/JPS63281008A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026Focusing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor

Abstract

PURPOSE:To securely prevent a defective pattern from being formed by checking whether or not there is abnormality of flatness on an exposure device side and taking a self-judgement of abnormality like this. CONSTITUTION:An exposing device A which has an automatic focusing device measures the coordinates of three points (or >=3 points) on a wafer 6 and a reference plane for the wafer 6 is found from at least the three monitored points. Then exposing operation is entered, the automatic focusing device controls the lens position of the exposing device A at each exposure position so that a constant interval l to the surface of the wafer 6 is maintained, and the position (height) of the lens which is controlled for each exposure position A is compared with a reference value found from the specific point of the lens for, for example, a rack. Consequently, whether or not there is the abnormality of flatness of a pattern formation body surface is detected by detecting whether or not the difference is smaller than a specific value.

Description

【発明の詳細な説明】 〔概 要〕 露光前にパターン形成体の表面上の少くとも3点の座標
を計測して該パターン形成体に対する基準平面を求め、
各露光位置毎に該パターン形成体表面と一定の間隔を保
つように制御される露光用レンズの位置を、それぞれ該
露光位置に対応する該基準平面上の所定点から求められ
る各基準値と比較し、その差が許容値以内かどうかを検
出することによって該パターン形成体表面のフラットネ
スの異常の有無を検出する工程を含む露光方法であって
、該パターン形成体表面のフラットネスが急激に変化し
ているような場合には、該フラットネスの変化を確実に
チェックして不良パターンの発生を阻止することができ
る。
[Detailed Description of the Invention] [Summary] Before exposure, the coordinates of at least three points on the surface of the patterned body are measured to determine a reference plane for the patterned body,
The position of the exposure lens, which is controlled to maintain a constant distance from the surface of the patterned body for each exposure position, is compared with each reference value obtained from a predetermined point on the reference plane corresponding to the exposure position. and detecting whether there is an abnormality in the flatness of the surface of the pattern-formed body by detecting whether the difference is within a tolerance value, the exposure method comprising: If there is a change in flatness, the change in flatness can be reliably checked to prevent the occurrence of defective patterns.

(産業上の利用分野〕 本発明はウェーハ又はガラス乾板等のパターン形成体表
面のフラットネス(平坦度)に異常があるかどうかを検
出するための露光方法に関する。
(Industrial Field of Application) The present invention relates to an exposure method for detecting whether there is an abnormality in the flatness of the surface of a patterned object such as a wafer or a glass dry plate.

〔従来の技術〕[Conventional technology]

−gにウェーハ、ガラス乾板等にレジスト等を用いて所
定のパターンを転写形成するにあたっては、ステッパー
、フォトリピータ−1電子ビーム露光装置等を用い、こ
れらの露光装置側又はウェハ(又はガラス乾板)側を移
動させながら、各露光位置毎に、自動焦点合わせ装置(
オートフォーカス装置)によってレンズの焦点合わせを
行い、これによって所定のパターン形成が行われている
- When transferring a predetermined pattern onto a wafer, a glass dry plate, etc. using a resist, etc., a stepper, a photorepeater, etc. While moving the side, adjust the automatic focusing device (
A predetermined pattern is formed by focusing the lens using an autofocus device (an autofocus device).

第2図は上記露光装置に設けられた自動焦点合わせ装置
の概略図を示すもので、1はレンズ(縮小投影レンズ)
本体をそなえたコラム部分、2および3はそれぞれ該コ
ラム部分に設けられた発光部および受光部、4および5
はそれぞれ反射鏡、6はウェーハである。発光部2から
送出され反射鏡4、ウェーハ6の表面および反射鏡5で
順次反射されて受光部3に向う反射光のパスは、第3図
に示されるように、該反射光が反射するウェーハ6表面
の位置の上下によって変化する。したがって該反射光が
常に受光部3で正しく受光されるように該レンズ(又は
該ウェーハ表面)の位置(高さ)を第4図の符号1乃至
1″で示されるように調整する(例えばレンズ本体を架
台に対して上下動させる)ことにより、該第4図に示さ
れるように、該ウェーハ表面のフラットネスが変化して
も、該コラム(レンズ)とウェーハ表面との間隔lを一
定に保つように制御することができる。
Figure 2 shows a schematic diagram of the automatic focusing device installed in the above-mentioned exposure device, and 1 is a lens (reducing projection lens).
Column parts 2 and 3 with the main body are light emitting parts and light receiving parts, 4 and 5, respectively, provided in the column parts.
are reflecting mirrors, and 6 is a wafer. As shown in FIG. 3, the path of the reflected light sent out from the light emitting section 2, sequentially reflected by the reflecting mirror 4, the surface of the wafer 6, and the reflecting mirror 5, and directed toward the light receiving section 3 is the wafer on which the reflected light is reflected. 6 Varies depending on the top and bottom position of the surface. Therefore, the position (height) of the lens (or the wafer surface) is adjusted as indicated by the symbols 1 to 1'' in FIG. 4 so that the reflected light is always correctly received by the light receiving section 3 (for example, As shown in FIG. 4, by moving the main body up and down with respect to the pedestal, the distance l between the column (lens) and the wafer surface can be kept constant even if the flatness of the wafer surface changes. It can be controlled to keep.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このように従来の自動焦点合わせ装置は、ウェーハのフ
ラットネスに対応して該レンズ本体と該ウェーハ表面と
の間隔lが一定になるよう該レンズ本体の高さを制御す
る機能を有していることによって、該ウェーハ表面の平
坦性がゆるやかに変化している場合には、該平坦性の変
化に応じて自動的に焦点合わせを行い正常なパターンを
形成することができるけれども、例えばウェーハ表面に
ゴミ等が付着することなどによって該ウェーハ表面の平
坦性が急激に変化しているような場合には、該自動焦点
合わせ装置がかかる急激な変化にまで追従することがで
きず、このようなフラットネスの異常が存在する場合に
も、パターン形成グを行ってしまうことにより、不良パ
ターンの発生を避けえないという問題点があった。
In this way, the conventional automatic focusing device has a function of controlling the height of the lens body so that the distance l between the lens body and the wafer surface is constant in accordance with the flatness of the wafer. For example, if the flatness of the wafer surface changes gradually, it is possible to automatically adjust the focus according to the change in flatness and form a normal pattern. If the flatness of the wafer surface changes rapidly due to the adhesion of dust, etc., the automatic focusing device will not be able to follow such sudden changes, and There is a problem in that even if there is a nest abnormality, pattern formation is performed, making it impossible to avoid the generation of defective patterns.

本発明はかかる問題点を解決するためになされたもので
、上述したようにウェーハ表面にゴミ等か付着している
ことによって、大きなフラットネスの異常が存在する場
合には、該フラットネスの異常の存在を露光装置側で確
実にチェックし、このような異常の有無を確実に自己判
断することにより、不良パターンの発生を確実に防止し
たものである。
The present invention has been made to solve this problem, and as described above, when there is a large flatness abnormality due to dust or the like adhering to the wafer surface, the flatness abnormality is By reliably checking the presence of such abnormalities on the exposure apparatus side and reliably self-determining the presence or absence of such abnormalities, the occurrence of defective patterns can be reliably prevented.

〔問題点を解決するための手段〕[Means for solving problems]

かかる問題点を解決するために、本発明においては、露
光前にパターン形成体の表面上の少くとも3点の座標を
計測して該パターン形成体に対応する基準平面を求め、
各露光位置毎に該パターン形成体表面と一定の間隔を保
つように制御される露光用レンズの位置を、それぞれ該
露光位置に対する該基準平面上の所定点から求められる
各基準値と比較し、その差が許容値以内かどうかを検出
することによって該パターン形成体表面のフラットネス
の異常の有無を検出する工程を含む露光方法が提供され
る。
In order to solve this problem, in the present invention, the coordinates of at least three points on the surface of the patterned body are measured before exposure to determine a reference plane corresponding to the patterned body,
Comparing the position of the exposure lens, which is controlled to maintain a constant distance from the surface of the patterned body for each exposure position, with each reference value determined from a predetermined point on the reference plane for the exposure position, An exposure method is provided that includes a step of detecting the presence or absence of an abnormality in flatness on the surface of the patterned body by detecting whether the difference is within a tolerance value.

〔作 用〕[For production]

上記構成によれば、各露光位置毎に該レンズの位置と該
基準値とを比較することによって、該パターン形成体表
面のフラットネスが急激に変化しているような場合には
、該フラットネスの異常の存在を確実にチェックして不
良パターンの発生を確実に防止することができる。
According to the above configuration, by comparing the position of the lens and the reference value for each exposure position, if the flatness of the surface of the pattern forming body changes rapidly, the flatness is determined. It is possible to reliably check for the presence of anomalies and to reliably prevent the occurrence of defective patterns.

〔実施例〕〔Example〕

第1図は本発明の1実施例としての露光方法の手順を説
明するためのフローチャートであって、パターン形成体
としての各ウェーハ毎に(ガラス乾板の場合も同様)、
該ウェーハのフラットネスに異常があるかどうかを判断
するために、先づステップ1において、露光前に上記自
動焦点合わせ装置を有する露光装置を利用して、該ウェ
ーハ上の3点(又は3点以上)の座標を計測し、ステン
ブ2においてこのようにしてモニターした少くとも3点
から該ウェーハに対する基準平面を求める。
FIG. 1 is a flowchart for explaining the steps of an exposure method as an embodiment of the present invention, in which for each wafer as a pattern forming body (the same applies to the case of a glass dry plate),
In order to determine whether or not there is an abnormality in the flatness of the wafer, first in step 1, before exposure, using the exposure apparatus having the automatic focusing device, focus on three points (or three points) on the wafer. The coordinates (above) are measured, and a reference plane for the wafer is determined from at least three points monitored in this manner on the stent 2.

次いでステップ3において露光作業に入り、各露光位置
毎に、上記自動焦点合わせ装置によってウェーハ表面と
一定の間隔lを保つように露光装置のレンズの位置を制
御し、このようにして各露光位置毎に制御されたレンズ
の位置(高さ)を例えば架台に対する該レンズの相対的
変位によって検出し、次にステップ4においてこのよう
にして検出されたレンズの位置(高さ)と該露光位置に
対応する該基準平面上の所定点から求められる基準値(
該露光位置に対応するX座標およびy座標によって決ま
る該基準平面上の所定点の2座標)とを比較する。そし
てその比較の結果、該露光位置における該レンズの位置
と該基準値との差が所定の許容誤差の範囲内にあればス
テップ5に移り、咳つェーへに対する露光作業が終了す
るまで各露光位置毎に上記レンズ位置の検出(ステップ
3)と、該検出されたレンズ位置と該露光位置に対応す
る基準値との比較(ステップ4)が行われる。
Next, in step 3, the exposure operation begins, and the automatic focusing device controls the position of the lens of the exposure device so as to maintain a constant distance l from the wafer surface for each exposure position. The position (height) of the lens controlled in this way is detected, for example, by the relative displacement of the lens with respect to the mount, and then in step 4, the position (height) of the lens thus detected corresponds to the exposure position. The reference value (
2 coordinates of a predetermined point on the reference plane determined by the X and Y coordinates corresponding to the exposure position. As a result of the comparison, if the difference between the position of the lens at the exposure position and the reference value is within a predetermined tolerance range, the process moves to step 5, and each For each exposure position, the lens position is detected (step 3), and the detected lens position is compared with a reference value corresponding to the exposure position (step 4).

このようにして該レンズ位置と該基準値との差がすべて
許容誤差の範囲内にあり、該ウェーハに対する露光作業
が終了すれば、ステップ5からステップ6に移り次のウ
ェーハにおいて再びステップ1からの上記各ステップが
繰返される。
In this way, if all the differences between the lens position and the reference value are within the tolerance range and the exposure work for the wafer is completed, the process moves from step 5 to step 6, and the process starts again from step 1 for the next wafer. Each of the above steps is repeated.

一方、ある露光位置における露光作業中、上記ステップ
4において該露光位置における該レンズの位置と該基準
値との差が該許容誤差の範囲を超えた場合には、ステッ
プ7に移って所定のアラームを発生させるとともに、更
にステップ8において露光作業の停止又は継続を決定し
、停止と決定した場合はステップ9に移って露光装置の
作動を停止させる。
On the other hand, during exposure work at a certain exposure position, if in step 4 above the difference between the position of the lens at the exposure position and the reference value exceeds the tolerance range, the process moves to step 7 and a predetermined alarm is set. In addition, in step 8 it is determined whether to stop or continue the exposure operation, and if it is determined to stop, the process moves to step 9 and the operation of the exposure apparatus is stopped.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、パターン形成体表面のフラットネスが
急激に変化しているような場合には、該フラットネスの
急激な変化(異常)を確実チェックすることができ、そ
れによって不良パターンの発生を確実に防止することが
できる。
According to the present invention, when the flatness of the surface of a patterned object changes rapidly, the sudden change (abnormality) in the flatness can be reliably checked, thereby preventing the occurrence of defective patterns. can be reliably prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の1実施例としての露光方法の手順を
説明するためのフローチャートを示す図、第2図は、一
般の露光装置に設けられた自動焦点合わせ装置の概略図
、 第3図は、ウェーハ表面の位置の上下によって反射光の
パスが変化する状態を説明する図、第4図は、ウェーハ
表面のフラットネスの変化に応じてレンズ本体が上下動
される状態を示す図である。 (符号の説明) 1・・・レンズ本体を内蔵したコラム部、2・・・発光
部、    3・・・受光部、4.5・・・反射鏡、 
 6・・・ウェーハ表面。 するためのフローチャート 第1図
FIG. 1 is a flowchart for explaining the steps of an exposure method as an embodiment of the present invention, FIG. 2 is a schematic diagram of an automatic focusing device provided in a general exposure apparatus, and FIG. The figure is a diagram explaining how the path of reflected light changes depending on the vertical position of the wafer surface, and Figure 4 is a diagram showing how the lens body is moved up and down in response to changes in the flatness of the wafer surface. be. (Explanation of symbols) 1... Column section with built-in lens body, 2... Light emitting section, 3... Light receiving section, 4.5... Reflector,
6... Wafer surface. Figure 1: Flowchart for

Claims (1)

【特許請求の範囲】 1、露光前にパターン形成体の表面上の少くとも3点の
座標を計測して該パターン形成体に対する基準平面を求
め、各露光位置毎に該パターン形成体表面と一定の間隔
を保つように制御される露光用レンズの位置を、それぞ
れ該露光位置に対応する該基準平面上の所定点から求め
られる各基準値と比較し、その差が許容値以内かどうか
を検出することによって該パターン形成体表面のフラッ
トネスの異常の有無を検出する工程を含むことを特徴と
する露光方法。 2、該パターン形成体がウェハ又はガラス乾板である、
特許請求の範囲第1項記載の露光方法。
[Claims] 1. Before exposure, measure the coordinates of at least three points on the surface of the pattern-formed body to determine a reference plane for the pattern-formed body, and for each exposure position, measure the coordinates of at least three points on the surface of the pattern-formed body, and determine the coordinates of at least three points on the surface of the pattern-formed body for each exposure position. The position of the exposure lens, which is controlled to maintain a distance of An exposure method comprising the step of detecting the presence or absence of an abnormality in flatness on the surface of the patterned body by detecting the presence or absence of an abnormality in flatness on the surface of the patterned body. 2. The pattern forming body is a wafer or a glass dry plate;
An exposure method according to claim 1.
JP62114457A 1987-05-13 1987-05-13 Exposing means Pending JPS63281008A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62114457A JPS63281008A (en) 1987-05-13 1987-05-13 Exposing means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62114457A JPS63281008A (en) 1987-05-13 1987-05-13 Exposing means

Publications (1)

Publication Number Publication Date
JPS63281008A true JPS63281008A (en) 1988-11-17

Family

ID=14638208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62114457A Pending JPS63281008A (en) 1987-05-13 1987-05-13 Exposing means

Country Status (1)

Country Link
JP (1) JPS63281008A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007306013A (en) * 2007-06-15 2007-11-22 Toshiba Corp Automatic focusing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007306013A (en) * 2007-06-15 2007-11-22 Toshiba Corp Automatic focusing device
JP4550863B2 (en) * 2007-06-15 2010-09-22 株式会社東芝 Automatic focusing device

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