JPS6327536A - Apparatus for low-temperature plasma treatment of sheet - Google Patents
Apparatus for low-temperature plasma treatment of sheetInfo
- Publication number
- JPS6327536A JPS6327536A JP16943286A JP16943286A JPS6327536A JP S6327536 A JPS6327536 A JP S6327536A JP 16943286 A JP16943286 A JP 16943286A JP 16943286 A JP16943286 A JP 16943286A JP S6327536 A JPS6327536 A JP S6327536A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- low
- sheet
- vacuum
- temperature plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009832 plasma treatment Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 claims description 31
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 49
- 239000006227 byproduct Substances 0.000 description 5
- 239000004744 fabric Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 241001648319 Toronia toru Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Treatment Of Fiber Materials (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は布帛、フィルム等のシート状物質を低温プラズ
マの反応を利用してその7−ト状物質の表面特性を改質
するに使用するシート物の低温プラズマ処理装置に関す
るものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a sheet used for modifying the surface properties of sheet-like materials such as fabrics and films by utilizing the reaction of low-temperature plasma. This invention relates to low-temperature plasma processing equipment for objects.
〔発明の背景〕 −
従来において、工業的に生産する長尺布帛、あるいは、
長尺フィルム等のシート状物質の表面特性を改質するた
めの手段として、それらのシート状物質を低温プラズマ
を発生する反応器内に位置又は通過せしめて、低温プラ
ズマ反応処理を行なうことが公知とされている。ところ
が、これらのシート状物質を低温プラズマ処理する従来
の低温グラズマ処理装置の機構は、真空(減圧)が保持
される反応器内にプラズマ発生電極を配置し、この反応
器内にプラズマ発生ガスを供給すると共に、電極に例え
ば13.56〜!Hzの高周波を給電することにより反
応器内に低温プラズマ−を発生することができるもので
あり、かくして発生された低温プラズマにより励起され
たガス雰囲気中に上記のシート状物質を位置(通過)せ
しめることにより目的とするプラズマ反応処理を行なっ
ているものであるが、従来の低温プラズマ処理装置では
、低温プラズマガスの発生効率、低温プラズマガスの反
応効率、低温プラズマガス質等の点で問題があった。[Background of the invention] - Conventionally, industrially produced long fabrics or
As a means for modifying the surface properties of sheet-like materials such as long films, it is known to perform a low-temperature plasma reaction treatment by placing the sheet-like materials in or passing through a reactor that generates low-temperature plasma. It is said that However, the mechanism of conventional low-temperature plasma processing equipment that processes these sheet-like materials with low-temperature plasma is to place a plasma generation electrode in a reactor that maintains a vacuum (reduced pressure), and to introduce plasma generation gas into this reactor. For example, 13.56~! A low-temperature plasma can be generated in the reactor by supplying high-frequency power at Hz, and the above-mentioned sheet-like material is positioned (passed through) in a gas atmosphere excited by the low-temperature plasma thus generated. However, conventional low-temperature plasma processing equipment has problems in terms of low-temperature plasma gas generation efficiency, low-temperature plasma gas reaction efficiency, low-temperature plasma gas quality, etc. Ta.
即ち反応器内に低温プラズマがスを発生させることは可
能であるが、その反応器内に位置(走行)されるシート
状物質に反応作用される低温プラズマガスは、反応器内
の一部のガスであって、他のガスは無駄となるケースが
多く低温プラズマガスの消費効率が悪い、換言すれば、
高周波発生電力の便用効率が低いといった問題点がある
。In other words, it is possible to generate low-temperature plasma gas in the reactor, but the low-temperature plasma gas that is reacted on the sheet-like material positioned (travelled) in the reactor is limited to a portion of the reactor. In other words, there are many cases where other gases are wasted and the consumption efficiency of low-temperature plasma gas is poor.
There is a problem that the usability efficiency of high-frequency generated power is low.
また従来の低温プラズマ反応器においては外気(空気)
の吸引、特にシート状物質を連続的に通し得る連続処理
用の低温プラズマ反応器においては、そのシール機構か
らの外気(空気)の吸引が長短に生じて、その反応器内
における副生ガスの混在量がpB太し、その結果シート
状物質への副生ガスの付着が多くなって低温グラズマ処
理効果が悪いといった問題点もあった。In addition, in conventional low-temperature plasma reactors, outside air (air)
In particular, in a low-temperature plasma reactor for continuous processing in which sheet-like materials can be passed continuously, the suction of outside air (air) from the sealing mechanism occurs at various times, and by-product gases in the reactor are There was also a problem that the mixed amount increased in pB, resulting in increased adhesion of by-product gas to the sheet material, resulting in poor low-temperature glazma treatment effects.
〔発明の目的〕
本発明はかかる従来の問題点に着目してなされたもので
、七の巣1の目的は、プラズマ反応器内において発生す
る低温プラズマガス中に副生ガスを含まない新鮮かつ品
質の良好な低温プラズマが、スをシート状物質へ付与し
てプラズマ処理の効率及び品質を高めることにある。第
2の目的は、外部へ廃棄される低温プラズマガス及びシ
ート状物質の移送ゾーン以外で発生する低温プラズマ量
を削減して、低温プラズマガスの消費効率を高め、さら
には電気的エネルギーの省力化を計ることにある。[Object of the Invention] The present invention has been made by focusing on such conventional problems, and the purpose of Seven Nest 1 is to produce a fresh and free of by-product gas in the low-temperature plasma gas generated in the plasma reactor. The purpose of high-quality low-temperature plasma is to apply gas to sheet-like materials to improve the efficiency and quality of plasma processing. The second purpose is to reduce the amount of low-temperature plasma generated outside the transfer zone for low-temperature plasma gas and sheet materials that are disposed of to the outside, increase the consumption efficiency of low-temperature plasma gas, and further save electrical energy. The purpose is to measure the
以下に本発明を図面に示す実施例に基づいて詳細に説明
する。The present invention will be described in detail below based on embodiments shown in the drawings.
1は真空缶体であって、この真空缶体lの両側には、例
えば長尺の商用、不i&布、フィルム等のシート状物質
2を通過せしめることはできるが、この真空缶体1内の
減圧(真空)状態を保持せしめることができるシール機
構3が設けられている。Reference numeral 1 denotes a vacuum can body 1. Although it is possible to pass a sheet-like material 2 such as a long commercial, non-woven fabric, or film through both sides of this vacuum can body 1, A sealing mechanism 3 is provided that can maintain a reduced pressure (vacuum) state.
さらに該真空缶体1の内部には多数個(本来り例では4
個)の偏平状の反応器4と、シート状物質2をその反応
器4内へ案内するための多数本のガイドロール5が配列
されている。6(1に空缶体l内を減圧するだめの真空
ポンプであって、真空缶体1に取付けらnている。前記
反応器4には、第2図及び第3図に示すように長尺広幅
のシート状物質2が通過し祷るようにその上下両端部に
、シート状物質2の挿通ロアが形成されてお9、これら
の挿通ロアには、シート状物質を挿通することは許すが
その反応器4内を減圧状態に保持せしめることができる
例えばリップシール、ラビリンスシール等のシール機構
(図示せず)が設けられている。また谷反応器4の内部
中央部には、低温プラズマ発1に@!、8が配設されて
いる。59は反応器4内にプラズマ発生がスを供給する
だめのガス供給ノ2イブであってこのガス供給ノ9イア
′9には、この反応器4内を移送するシート状物質の幅
方向に延びるガス噴射ノズル10が設けられている。1
1はグラズマ発生電極8に接続された給電線であって、
この給電線は高周波発生装置12よシ、前記の真空缶体
1及び反応64を貫通するシールド線即ち導111aの
周囲にポリエチレン等の絶縁体を介してシールド網11
bが被せられている同軸ケーブルであって、そのシール
ド網11bは反応器4に接続され、導線11&のみがグ
ラズマ発生電極8に接続されている。なお真空缶体1と
反応器4をアースする。Furthermore, inside the vacuum can body 1, there are a large number of
A plurality of flat reactors 4 and a large number of guide rolls 5 for guiding the sheet material 2 into the reactors 4 are arranged. 6 (1) is a vacuum pump for reducing the pressure inside the empty can body 1, and is attached to the vacuum can body 1.The reactor 4 has a long Insertion lowers for the sheet-like material 2 are formed at both upper and lower ends of the sheet-like material 2 so that the sheet-like material 2 having a wide width can pass therethrough, and insertion of the sheet-like material is allowed through these insertion lowers. A sealing mechanism (not shown) such as a lip seal or a labyrinth seal is provided to maintain the inside of the reactor 4 in a reduced pressure state.Furthermore, in the center of the interior of the valley reactor 4, a low-temperature plasma @!, 8 are arranged in the reactor 1. 59 is a gas supply no. 2 for supplying plasma generation gas into the reactor 4, and this gas supply no. A gas injection nozzle 10 is provided that extends in the width direction of the sheet material to be transferred within the reactor 4.1.
1 is a power supply line connected to the glazma generation electrode 8,
This power supply line is connected to a shield network 11 via an insulator such as polyethylene around a shield wire, that is, a conductor 111a that passes through the high frequency generator 12, the vacuum vessel 1, and the reaction 64.
b is a coaxial cable covered with shield net 11b, which is connected to reactor 4, and only conductive wire 11& is connected to glazma generation electrode 8. Note that the vacuum container 1 and the reactor 4 are grounded.
以上が本実施PIの構成であるが次にその作用について
述べると、先ず真空ボンf6を動作して真空缶体1及び
反応器4内を減圧し、例えばその真空缶体1内を5 X
10−2Torrに減圧するこの真空缶体1内の減圧
に追従して反応器4内も略同等に減圧される。そこでが
ス供給バイア″9より各反応器4内に所定のプラズマ発
生ガスを供給すると共に、電極8に例えば1 kHz〜
300 MHzの高周波を給電することによりそれらの
反応器4内では低温プラズマガスが発生する。この状態
を保持させながらシート状物質2を図示のように低温プ
ラズマガスが発生している各反応器4内を頑へ通過せし
めることにより、そのシート状物質2の表面が活性化さ
れ目的とする低温プラズマ反応処理がな°されるもので
あるが、この装置によnば、低温プラズマガスを発生保
持している各反応器4は、真空缶体1に保護されており
、この真空缶体1に真空ポンプ6を接続して真空缶体l
内を常に減圧し、また反応器4円にはプラズマ発生ガス
が逐次供給されていることから各反応器4内の内圧が真
空缶体1の内圧よりも低くなることはない。従りて各反
応器4内に外部エア(空気又は副生ガス)が混入される
ことがないので、反応器4内においては、常に良質の低
温プラズマガス雰囲気に確保でき、目的とするプラズマ
反応処理が効果的に行なえる特長がある。また各反応器
4は容積の小さい形状、即ちシート状物3Ijを通過せ
しめることが可能である偏平形状をなし、さらに各反応
器4には真空ポンプを亘に接続していないので低温プラ
ズマガスと、シート状物質との接触効率が高められ、ま
た無駄にプラズマがスが廃棄されることもないので低温
プラズマがスの使用効率が高められ、また園ガスの発生
エイルギーの省力化が達成できる。さらに電極8はアー
スされた導電性の反応器4に接近状態で囲まれさらにこ
の反応器はアースされた真空体に囲まれていることから
、高周波及びプラズマの漏洩がなくなり、従って反応器
4の内部のみにおいて低温プラズマの発生が確実となり
、低温プラズマガスの使用効率が高められると共に装置
外部での高周波による弊害を皆無とすることができる等
の効果がある。The above is the configuration of this implementation PI. Next, we will discuss its operation. First, the vacuum bomb f6 is operated to reduce the pressure inside the vacuum can body 1 and the reactor 4, and for example, the inside of the vacuum can body 1 is
Following the pressure reduction in the vacuum vessel 1 to 10-2 Torr, the pressure in the reactor 4 is also reduced to approximately the same level. Therefore, a predetermined plasma generating gas is supplied into each reactor 4 from the gas supply via "9", and a plasma generating gas is supplied to the electrode 8 at a frequency of, for example, 1 kHz to
Low-temperature plasma gas is generated in these reactors 4 by supplying a high frequency of 300 MHz. While maintaining this state, the sheet-like material 2 is stubbornly passed through each reactor 4 in which low-temperature plasma gas is generated as shown in the figure, so that the surface of the sheet-like material 2 is activated and used for the purpose. According to this apparatus, each reactor 4 that generates and retains low-temperature plasma gas is protected by a vacuum can 1, and this vacuum can Connect the vacuum pump 6 to 1 and vacuum the body l.
Since the pressure inside each reactor 4 is constantly reduced and the plasma generating gas is successively supplied to each of the reactors 4, the internal pressure within each reactor 4 will never become lower than the internal pressure of the vacuum vessel 1. Therefore, since external air (air or by-product gas) is not mixed into each reactor 4, a high-quality low-temperature plasma gas atmosphere can always be maintained in the reactor 4, and the desired plasma reaction can be carried out. It has the advantage of being able to perform processing effectively. In addition, each reactor 4 has a small volume shape, that is, a flat shape that allows the sheet-like material 3Ij to pass through, and since a vacuum pump is not connected across each reactor 4, low-temperature plasma gas and Since the contact efficiency with the sheet-like material is increased and plasma gas is not wasted, the efficiency of using low-temperature plasma gas is increased, and the labor required for generating garden gas can be reduced. Moreover, since the electrode 8 is closely surrounded by the grounded conductive reactor 4 and this reactor is further surrounded by a grounded vacuum body, radio frequency and plasma leakage are eliminated, so that the reactor 4 is It is possible to ensure that low-temperature plasma is generated only inside the device, thereby increasing the efficiency of using low-temperature plasma gas and eliminating any harmful effects caused by high frequencies outside the device.
なお上記の実施例では真空缶体1を、長尺布帛を連続的
に通し得る構造例を用いたが、この真空缶体1は長尺布
帛の端部を巻きとる機構を具備せしめたバッチ式構造で
あってもよい。In the above embodiment, the vacuum can body 1 has a structure in which a long fabric can be passed through continuously, but this vacuum can body 1 is a batch type vacuum can body 1 equipped with a mechanism for winding up the end of the long fabric. It may be a structure.
以上のように本発明は、密閉され、真空ポンプの駆動に
より減圧することができる真空缶体と、該真空缶体の内
部に配設されると共に内部にシート状物質を通過せしめ
一乃至複数個の反応器を有し、この反応器は、シート状
物質を挿通することが可能なシール機構を具備せしめた
シート物挿通口を除いて密閉される器であって、該反応
器内には高周波を印加するプラズマ発生電極と、プラズ
マ発生ガスの噴射ノズルを具備せしめさらに該反応器及
び前記真空缶体はアースされていることを特徴とするシ
ート物の低温プラズマ処理装置である。As described above, the present invention provides a vacuum can that is sealed and can be depressurized by driving a vacuum pump, and one or more vacuum cans that are disposed inside the vacuum can and allow a sheet-like material to pass through the inside of the vacuum can. This reactor is a vessel that is sealed except for a sheet material insertion opening equipped with a sealing mechanism through which a sheet material can be inserted, and a high-frequency This low-temperature plasma processing apparatus for sheet materials is characterized in that it is equipped with a plasma generation electrode for applying a .
従ってこの装置によれば、低温プラズマガスを発生保持
する反応器は、真空缶体に保護されており、この真空缶
体に真空ポンプを接続して真空缶体1内を常に減圧し、
また反応器内にはプラズマ発生がスが逐次供給されてい
ることから各反応器内の内圧が真空缶体の内圧よりも低
くなることはない。従って各反応器内に外部エア(空気
又は副生ガス)が混入されることがないので、反応器内
においては、常に良質の低温プラズマガス雰囲気に確保
でき、目的とするプラズマ反応処理が効果的に行なえる
特長がある。また電極はアースされた28電性の反応器
に接近状態で囲まれさらにこの反応器はアースされた真
空缶体に囲まれていることから、高周波及びプラズマの
漏洩がなくなり、便って反応器の内部のみにおいて低温
プラズマの発生が確実となり、低温グラズ÷ガスの使用
効率が昼められると共に装置外部での高周波によυ弊害
を皆無とすることができる等の効果がある。Therefore, according to this device, the reactor that generates and holds low-temperature plasma gas is protected by a vacuum can, and a vacuum pump is connected to the vacuum can to constantly reduce the pressure inside the vacuum can.
Furthermore, since plasma generation gas is sequentially supplied into the reactors, the internal pressure within each reactor will never become lower than the internal pressure of the vacuum vessel. Therefore, since external air (air or by-product gas) is not mixed into each reactor, a high-quality low-temperature plasma gas atmosphere can always be maintained in the reactor, and the desired plasma reaction treatment can be carried out effectively. It has the advantage of being able to perform In addition, since the electrode is closely surrounded by a grounded 28-electrode reactor, and this reactor is further surrounded by a grounded vacuum vessel, leakage of high frequencies and plasma is eliminated, and the reactor is The generation of low-temperature plasma is ensured only inside the device, the efficiency of using low-temperature glass/gas is reduced, and there are effects such as being able to completely eliminate the harmful effects of high frequency waves outside the device.
第1図は本発明よりなる装置の実施例を示した概略説明
図、第2図は反応器の構造説明図、第3図はその正面図
、第4図はガス供給管の説明図である。
1・・・真空缶体 2・・・シート状物質3・
・・シール機構 4・・・反応器5・・・ガイド
ロール 6・・・真空ボンシフ・・・挿通口
8・・・低温プラズマ発生電極9・・・ガス供
給/4’イブ 10・・・がス噴射ノズル11・・・
給電線 12・・・高周波発生装置第1図
■
第2図 第3図
第4図
手続補正書
゛ 昭和17年2月29日
3、補正をする者
事件との関係 出 願 人
→←−本礪に)4−
氏 名(名称) ユ=iカ’ASfk>L4、代
理 人 (Nr!
L+さ−)住 所 東京都千代田区丸の内2丁目6番
2号丸の内へ重洲とル3308、補正の内容 別紙の
とおり
補 正 書 。
本願明細書中下記事環を補正いたします。
記
第5頁5〜11行目に
[これらの挿通ロア・・・・・配設されている。」とあ
るを次の如く訂正する。
[これらの挿通ロアはシート状物質を挿通することを許
すとともに1ガス供給パイづ9よシ該反応器4内へ供給
された処理ガスの流出口となっており、さらにその反応
器4内のガス密度(圧力)をその周囲の真空缶体1のカ
ス密度(圧力)より若干高くせしめるよう小面積のスリ
ット状になっている。
また必要に応じて例えばリツづシール、ラピリシスシー
ル等のシール機構(図示せず)を設けることもある。
このような構造をとることによシ反応器4内のガスはそ
の反応器4の外部に流出することはできるが、真空缶体
1内ガスの流入は極力おさえることができる。
また各反応器4の材質は、アルミ、鋼、鉄、ステシレス
など導電性金属が使用され、これがアースされ、その内
部中央部には低温プラズマ発生電極8が絶縁物質で絶縁
されて配設されており、反応器4とプラズマ発生電極8
との間で低温プラズマを発生させることができる。」
こユ」Fig. 1 is a schematic explanatory diagram showing an embodiment of the apparatus according to the present invention, Fig. 2 is a structural explanatory diagram of a reactor, Fig. 3 is a front view thereof, and Fig. 4 is an explanatory diagram of a gas supply pipe. . 1... Vacuum can body 2... Sheet-like material 3.
...Seal mechanism 4...Reactor 5...Guide roll 6...Vacuum bonsif...Insertion port
8... Low temperature plasma generation electrode 9... Gas supply/4' Eve 10... Gas injection nozzle 11...
Power supply line 12...High frequency generator Figure 1 ■ Figure 2 Figure 3 Figure 4 Procedural amendment ゛ February 29, 1945 3. Relationship with the person making the amendment case Applicant → ← - Book礪に)4- Name (name) Yu-i-ka'ASfk>L4, generation
Rito (Nr!
Address: 3308 Shigesu Toru, 2-6-2 Marunouchi, Chiyoda-ku, Tokyo. Details of the amendment: Written amendment as attached. We will amend the following links in the specification of this application. On page 5, lines 5 to 11, these insertion lowers are provided. '' should be corrected as follows. [These insertion lowers allow the sheet-like material to be inserted therethrough, and also serve as an outlet for the processing gas supplied into the reactor 4 from one gas supply pipe 9, and further serve as an outlet for the processing gas supplied into the reactor 4. It has a slit shape with a small area so that the gas density (pressure) is slightly higher than the gas density (pressure) of the surrounding vacuum vessel 1. Further, if necessary, a sealing mechanism (not shown) such as a Ritsu seal or a Lapiris seal may be provided. By adopting such a structure, the gas inside the reactor 4 can flow out of the reactor 4, but the inflow of the gas inside the vacuum can 1 can be suppressed as much as possible. Each reactor 4 is made of a conductive metal such as aluminum, steel, iron, or stainless steel, and is grounded, and a low-temperature plasma generation electrode 8 is installed in the center of the reactor 4 and insulated with an insulating material. , reactor 4 and plasma generation electrode 8
A low-temperature plasma can be generated between the two. "Koyu"
Claims (1)
る真空缶体と、該真空缶体の内部に配設されると共に内
部にシート状物質を通過せしめ一乃至複数個の反応器を
有し、この反応器は、シート状物質を挿通することが可
能なシール機構を具備せしめたシート物挿通口を除いて
密閉される器であって、該反応器内には高周波を印加す
るプラズマ発生電極と、プラズマ発生ガスの噴射ノズル
を具備せしめさらに該反応器及び前記真空缶体はアース
されていることを特徴とするシート物の低温プラズマ処
理装置。It has a vacuum can which is sealed and can be depressurized by driving a vacuum pump, and one or more reactors disposed inside the vacuum can and through which a sheet-like material is passed. The reactor is a vessel that is sealed except for a sheet material insertion opening equipped with a sealing mechanism through which a sheet material can be inserted, and a plasma generation electrode for applying high frequency waves inside the reactor; 1. A low-temperature plasma processing apparatus for sheet materials, characterized in that the reactor and the vacuum container are equipped with a plasma generating gas injection nozzle, and that the reactor and the vacuum can are grounded.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16943286A JPS6327536A (en) | 1986-07-18 | 1986-07-18 | Apparatus for low-temperature plasma treatment of sheet |
US07/071,889 US4829189A (en) | 1986-07-18 | 1987-07-10 | Apparatus for low-temperature plasma treatment of sheet material |
DE19873723865 DE3723865A1 (en) | 1986-07-18 | 1987-07-18 | REACTOR FOR A PLASMA TREATMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16943286A JPS6327536A (en) | 1986-07-18 | 1986-07-18 | Apparatus for low-temperature plasma treatment of sheet |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6327536A true JPS6327536A (en) | 1988-02-05 |
JPH0545616B2 JPH0545616B2 (en) | 1993-07-09 |
Family
ID=15886486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16943286A Granted JPS6327536A (en) | 1986-07-18 | 1986-07-18 | Apparatus for low-temperature plasma treatment of sheet |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6327536A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597456A (en) * | 1993-06-07 | 1997-01-28 | Hiroshi Kashiwagi | Method for producing medical materials |
CN106142532A (en) * | 2016-08-31 | 2016-11-23 | 南京苏曼等离子科技有限公司 | A kind of normal atmosphere low temperature plasma agricultural film processing equipment and operational approach thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0650013U (en) * | 1992-12-15 | 1994-07-08 | 旭光学工業株式会社 | Lens support structure |
-
1986
- 1986-07-18 JP JP16943286A patent/JPS6327536A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597456A (en) * | 1993-06-07 | 1997-01-28 | Hiroshi Kashiwagi | Method for producing medical materials |
CN106142532A (en) * | 2016-08-31 | 2016-11-23 | 南京苏曼等离子科技有限公司 | A kind of normal atmosphere low temperature plasma agricultural film processing equipment and operational approach thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0545616B2 (en) | 1993-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0667921B1 (en) | Microwave apparatus for depositing thin films | |
JPS62274080A (en) | Plasma treatment | |
JP2008196001A (en) | Plasma cvd apparatus | |
JPS6327536A (en) | Apparatus for low-temperature plasma treatment of sheet | |
US3392705A (en) | Compartmented electrode for electrical discharge process | |
JP4023775B2 (en) | Diamond-like carbon film deposition equipment | |
JP2014122419A (en) | Plasma CVD apparatus | |
JP4610069B2 (en) | Semiconductor device manufacturing equipment | |
JP2957068B2 (en) | Substrate surface treatment method | |
JPH0646990Y2 (en) | Plasma processing device | |
JPH01225642A (en) | Generation of uniform low-temperature plasma | |
JPH0680807A (en) | Continuous surface treatment of web | |
JP3310875B2 (en) | Plasma CVD equipment | |
JPH01130517A (en) | Plasma cvd device | |
JPH0578933B2 (en) | ||
JP2646457B2 (en) | Plasma processing-ion plating processing equipment | |
CA2264371C (en) | Thin film deposition method | |
JPH01100914A (en) | Thin film forming method using plasma cvd | |
JPH076953A (en) | Plasma cvd method and plasma cvd system | |
JPH01283362A (en) | Plasma treatment apparatus | |
JPH01283361A (en) | Plasma treatment apparatus | |
RU2016157C1 (en) | Method for treatment of fibrous material and device for its realization | |
JPS5911337A (en) | Method for low-temperature plasma treatment of sheet material | |
JP2538978B2 (en) | Plasma processing device | |
JPS59189133A (en) | Vacuum treatment apparatus |