JPS63274131A - Exposure device - Google Patents

Exposure device

Info

Publication number
JPS63274131A
JPS63274131A JP62111206A JP11120687A JPS63274131A JP S63274131 A JPS63274131 A JP S63274131A JP 62111206 A JP62111206 A JP 62111206A JP 11120687 A JP11120687 A JP 11120687A JP S63274131 A JPS63274131 A JP S63274131A
Authority
JP
Japan
Prior art keywords
pellicle
mask
light
light intensity
transmissivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62111206A
Other languages
Japanese (ja)
Inventor
Yukihiro Yamamoto
幸弘 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62111206A priority Critical patent/JPS63274131A/en
Publication of JPS63274131A publication Critical patent/JPS63274131A/en
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To enable the title device to recognize the deterioration level of a pellicle for informing an operator of the life of pellicle by a method wherein the transmissivity of light passing through the pellicle is automatically measured. CONSTITUTION:When a command is given to load a photomask 1 with a pellicle, a carriage 9 is operated before setting the mask 1 to a mask stage 2 to irradiate projecting light flux 8 from an illuminating optical system 6. This light flux 8 is focussed on a photodetector 10 for measuring light intensity set on the level similar to that between wafers. The light intensity without pellicle is memorized as A. A window 14 for measuring light intensity is made on the position corresponding to the photodetector 10 on the mask 1 to make, the light passing through the window 14 focus on the photodetector 10. The intensity when passing through the pellicle is memorized as B. This value of B/A is indicated as the transmissivity T of pellicle. At this time, the transmissivity T is previously set up to inform an operator of the life of pellicle by alarming when T falls below the set up value Tc.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、露光装置、特に、半導体製造に用いる露光
装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an exposure apparatus, and particularly to an exposure apparatus used in semiconductor manufacturing.

(従来の技術) 従来、この種の装置として第3図に示すものが知られて
いる。
(Prior Art) Conventionally, the device shown in FIG. 3 is known as this type of device.

図において、1は防塵装置付半導体露光用基板(以下、
ペリクル付きフォトマスクまたは単にマスクという。)
、2はマスクステージ、3はマスクローダ、4はウェハ
、5はウェハステージ、6は照明光学系、7は投影光学
系、8は投影露光光束、9は走査用キャリッジである。
In the figure, 1 is a semiconductor exposure substrate with a dustproof device (hereinafter referred to as
It is called a photomask with a pellicle or simply a mask. )
, 2 is a mask stage, 3 is a mask loader, 4 is a wafer, 5 is a wafer stage, 6 is an illumination optical system, 7 is a projection optical system, 8 is a projection exposure light beam, and 9 is a scanning carriage.

つぎに動作について説明する。Next, the operation will be explained.

ペリクル付きフォトマスク1を、マスクローダ3により
マスクステージ2上にローディングする。つぎに、ウェ
ハ4がウェハステージ5にセットし、そののち、マスク
とウェハの位置合わせが終了すると照明光学系6から光
束8を照射する。
A photomask 1 with a pellicle is loaded onto a mask stage 2 by a mask loader 3. Next, the wafer 4 is set on the wafer stage 5, and after the alignment of the mask and the wafer is completed, the illumination optical system 6 emits a light beam 8.

光束8はマスク1、投影光学系7を経てウェハ4上に結
像する。従来装置においては、このとき、走査用キャリ
ッジ9がスキャンすることにより光束8はマスク1、ウ
ェハ4の全面を照射することができるように構成されて
いた。
The light beam 8 passes through the mask 1 and the projection optical system 7, and forms an image on the wafer 4. In the conventional apparatus, the scanning carriage 9 scans at this time, so that the light beam 8 can illuminate the entire surface of the mask 1 and the wafer 4.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、従来の露光装置にあっては、セットされ
たペリクル付きフォトマスク1を何の検査も行なわずに
使用するしかなかった。
However, in the conventional exposure apparatus, the set photomask 1 with a pellicle has no choice but to be used without performing any inspection.

ところが、ペリクルは、露光装置の照射する紫外線によ
って材質が劣化すること力署知られており、したがって
ユーザは別にマスク毎の使用時間を記録し、それをもっ
てペリクルの寿命を推測せねばならず、マスク交換がか
なり頻繁であることと相まって、ペリクルが実際に劣化
したかどうかを知ることは困難であるという問題点があ
った。
However, it is known that the material of pellicles deteriorates due to the ultraviolet rays irradiated by exposure equipment. Therefore, users must separately record the usage time of each mask and use that to estimate the lifespan of the pellicle. Coupled with the fairly frequent replacement, the problem was that it was difficult to know whether the pellicle had actually deteriorated.

この発明は、以上のような問題点を解消するためになさ
れたもので、ペリクルを通る光線の透過率を自動的に測
定することにより、ペリクルの劣化の度合と知り、ペリ
クルの寿命を報することを可能にする装置を得ることを
目的としている。
This invention was made to solve the above-mentioned problems.By automatically measuring the transmittance of light passing through the pellicle, it is possible to determine the degree of deterioration of the pellicle and to report the lifespan of the pellicle. The aim is to obtain a device that makes it possible.

〔問題点を解決するための手段〕[Means for solving problems]

このため、この発明に係る露光装置においては、ウェハ
ステージ近傍の露光焦点位置に光強度測定用の受光素子
を設けることにより、前記の目的を達成しようとするも
のである。
Therefore, in the exposure apparatus according to the present invention, the above object is achieved by providing a light receiving element for measuring light intensity at the exposure focal position near the wafer stage.

また、この発明に係る別の露光装置は、光強度測定用に
、定められた場所に遮光物質のない部分(以下、「窓」
という。)を設けたマスクを使用するようにしたもので
ある。
Further, another exposure apparatus according to the present invention provides a portion (hereinafter referred to as a "window") where there is no light-shielding material at a predetermined location for light intensity measurement.
That's what it means. ) is used.

〔作用〕[Effect]

以上のような構成により、この発明による露光装置は、
マスクのローディング前後に照明光学系より照射された
光の強度を受光素子で測定し、マスクなしの状態の光強
度と、マスクあり(すなわち、ペリクル経由)の光強度
を比較することによりペリクルの透過率を測定する。
With the above configuration, the exposure apparatus according to the present invention has the following features:
The intensity of the light emitted from the illumination optical system is measured by the light receiving element before and after loading the mask, and the light intensity without the mask is compared with the light intensity with the mask (i.e., via the pellicle) to determine the transmission through the pellicle. Measure the rate.

(実施例) 以下、この発明の一実施例を図について説明する。第1
図において、10は光強度測定用受光素子である。また
第2図は、第1図において描かれているペリクル付きフ
ォトマスク1の詳細図であり、第2図において、11は
フォトマスク基板、12はペリクル枠、13は露光用パ
ターン部、14は光強度測定用“窓”部分である。
(Example) Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
In the figure, 10 is a light receiving element for measuring light intensity. FIG. 2 is a detailed view of the photomask 1 with a pellicle depicted in FIG. 1. In FIG. This is the "window" part for measuring light intensity.

つぎに動作について説明する。ペリクル付きフォトマス
ク1を装填する命令を出すと、マスク1をマスクステー
ジ2にセットする前にキャリッジ9が第1−2図に示す
ような場所に動き、照明光学系6から投影光束8を照射
する。この光束は、クエへ面と同じ高さにセットした光
強度測定用受光素子10に焦点を結ぶ。このときの光強
度を同受光素子10によって測定し、ペリクルなしのと
きの光強度をAとして記憶する。つぎにマスク1をマス
クステージ2上にセットし、そののち、第1図ないし第
3図に示すように、再び光束8を照射する。この光束8
は、まずマスク1上に焦点を結ぶが、第2図に示す光強
度測定用“窓”14か受光素子10に対応した場所に設
けであるため、光はここを通過し受光素子上に焦点を結
ぶ。このときの光強度が、ペリクルを通過したときの強
度をBとして記憶する。
Next, the operation will be explained. When a command to load the photomask 1 with a pellicle is issued, the carriage 9 moves to the position shown in FIG. 1-2 before setting the mask 1 on the mask stage 2, and the illumination optical system 6 irradiates the projection light beam 8. do. This light beam is focused on a light receiving element 10 for measuring light intensity, which is set at the same height as the surface of the square. The light intensity at this time is measured by the same light receiving element 10, and the light intensity without the pellicle is stored as A. Next, the mask 1 is set on the mask stage 2, and then, as shown in FIGS. 1 to 3, the light beam 8 is irradiated again. This luminous flux 8
First, the light is focused on the mask 1, but since the "window" 14 for measuring light intensity shown in FIG. Tie. The light intensity at this time is stored as B when it passes through the pellicle.

る。Ru.

このとき、透過率Tがあらかじめ設定し、設定値Tcを
下回るとアラームを表示し、使用者にペリクルの寿命を
知らせる。
At this time, the transmittance T is set in advance, and when it falls below the set value Tc, an alarm is displayed to notify the user of the lifespan of the pellicle.

また、この透過率測定動作は、マスクローディング時の
みならず、使用者が設定する回数の露光動作を終了する
と、自動的に行なうように装置を構成しであることはい
うまでもない。
It goes without saying that the apparatus is configured so that this transmittance measurement operation is performed not only when loading the mask, but also automatically after the number of exposure operations set by the user is completed.

この発明の一実施例によれば、マスクのローディング前
後に、照明光学系から照明された光の強度を受光素子で
測定し、光強度を比較することにより、ペリクルの寿命
を知ることができ、マスクの管理が容易になり、また、
歩留り低下を防ぐことができるという効果がある。
According to an embodiment of the present invention, the life of the pellicle can be determined by measuring the intensity of light emitted from the illumination optical system with the light receiving element before and after loading the mask, and comparing the light intensities. Mask management becomes easier, and
This has the effect of preventing a decrease in yield.

〔発明の効果〕〔Effect of the invention〕

以上に、説明してきたように、この発明によればペリク
ルの透過率を測定できるように構成したので、使用して
いるペリクルの寿命を知ることができ、これによってマ
スクの管理が容易になり、また歩留りの低下を未然に防
ぐことができるという効果を有する。
As explained above, according to the present invention, since the transmittance of the pellicle is configured to be measured, it is possible to know the lifespan of the pellicle in use, which facilitates mask management. It also has the effect of being able to prevent a decrease in yield.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例に係る露光装置の側断面図
で、(a)はマスクをマスクステージにセットした状態
、(b)はキャリッジを動かした状態、(C)はマスク
をマスクステージにセットした状態を示し、第2図はこ
の露光装置に用いるフォトマスクの一例、第3図は従来
の露光装置を示す側断面図である。 図において、1はベリタル付きフォトマスク、2はマス
クステージ、3はマスクローダ、4はウェハ、5はウェ
ハステージ、6は照明光学系、7は投影光学系、8は投
影光束、9は走査用キャリッジ、10は光強度測定用受
光素子、14は光強度測定用“窓”部分である。 なお、図中、同一符号は同一部分または相当部分を示す
FIG. 1 is a side sectional view of an exposure apparatus according to an embodiment of the present invention, in which (a) shows a state in which a mask is set on a mask stage, (b) shows a state in which a carriage is moved, and (c) shows a state in which a mask is set on a mask stage. It is shown set on a stage, FIG. 2 is an example of a photomask used in this exposure apparatus, and FIG. 3 is a side sectional view showing a conventional exposure apparatus. In the figure, 1 is a photomask with verital, 2 is a mask stage, 3 is a mask loader, 4 is a wafer, 5 is a wafer stage, 6 is an illumination optical system, 7 is a projection optical system, 8 is a projection light beam, and 9 is for scanning The carriage, 10 is a light receiving element for measuring light intensity, and 14 is a "window" portion for measuring light intensity. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (2)

【特許請求の範囲】[Claims] (1)防塵装置付半導体製造用露光基板を装填する際に
、装填前後の透過エネルギの差から、露光基板用防塵装
置の透過率を判断できることを特徴とする露光装置。
(1) An exposure apparatus characterized in that when loading an exposure substrate for semiconductor manufacturing with a dust prevention device, the transmittance of the exposure substrate dust prevention device can be determined from the difference in transmitted energy before and after loading.
(2)透過率測定のために、所定の場所に、遮光物質の
ない部分を設けた露光用基板を用いたことを特徴とする
特許請求の範囲第1項記載の露光装置。
(2) The exposure apparatus according to claim 1, characterized in that, for transmittance measurement, an exposure substrate is used in which a portion without a light-shielding material is provided at a predetermined location.
JP62111206A 1987-05-06 1987-05-06 Exposure device Pending JPS63274131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62111206A JPS63274131A (en) 1987-05-06 1987-05-06 Exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62111206A JPS63274131A (en) 1987-05-06 1987-05-06 Exposure device

Publications (1)

Publication Number Publication Date
JPS63274131A true JPS63274131A (en) 1988-11-11

Family

ID=14555205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62111206A Pending JPS63274131A (en) 1987-05-06 1987-05-06 Exposure device

Country Status (1)

Country Link
JP (1) JPS63274131A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394219A (en) * 1992-05-15 1995-02-28 Mitsubishi Denki Kabushiki Kaisha Exposure apparatus and method of exposure using the same
US7060403B2 (en) 2002-07-15 2006-06-13 International Business Machines Corporation In-situ pellicle monitor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394219A (en) * 1992-05-15 1995-02-28 Mitsubishi Denki Kabushiki Kaisha Exposure apparatus and method of exposure using the same
US7060403B2 (en) 2002-07-15 2006-06-13 International Business Machines Corporation In-situ pellicle monitor

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