JPS63265469A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS63265469A
JPS63265469A JP62098734A JP9873487A JPS63265469A JP S63265469 A JPS63265469 A JP S63265469A JP 62098734 A JP62098734 A JP 62098734A JP 9873487 A JP9873487 A JP 9873487A JP S63265469 A JPS63265469 A JP S63265469A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
island
silicon
recrystallized
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62098734A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0560668B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shigenobu Akiyama
秋山　重信
Genichi Yamazaki
山崎　弦一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62098734A priority Critical patent/JPS63265469A/ja
Publication of JPS63265469A publication Critical patent/JPS63265469A/ja
Publication of JPH0560668B2 publication Critical patent/JPH0560668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Recrystallisation Techniques (AREA)
JP62098734A 1987-04-23 1987-04-23 半導体装置の製造方法 Granted JPS63265469A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62098734A JPS63265469A (ja) 1987-04-23 1987-04-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62098734A JPS63265469A (ja) 1987-04-23 1987-04-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63265469A true JPS63265469A (ja) 1988-11-01
JPH0560668B2 JPH0560668B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-02

Family

ID=14227739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62098734A Granted JPS63265469A (ja) 1987-04-23 1987-04-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63265469A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5120666A (en) * 1989-05-16 1992-06-09 Fujitsu Limited Manufacturing method for semiconductor device
US6133583A (en) * 1994-03-11 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6700133B1 (en) 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5120666A (en) * 1989-05-16 1992-06-09 Fujitsu Limited Manufacturing method for semiconductor device
US6133583A (en) * 1994-03-11 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6700133B1 (en) 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device

Also Published As

Publication number Publication date
JPH0560668B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term