JPS63265441A - Measuring device - Google Patents

Measuring device

Info

Publication number
JPS63265441A
JPS63265441A JP10067487A JP10067487A JPS63265441A JP S63265441 A JPS63265441 A JP S63265441A JP 10067487 A JP10067487 A JP 10067487A JP 10067487 A JP10067487 A JP 10067487A JP S63265441 A JPS63265441 A JP S63265441A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
measured
optical system
matter
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10067487A
Other languages
Japanese (ja)
Inventor
Wataru Karasawa
唐沢 渉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP10067487A priority Critical patent/JPS63265441A/en
Publication of JPS63265441A publication Critical patent/JPS63265441A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable the high magnification detecting of a matter to be measured, by carrying/positioning the matter to be measured within the usable range of an optical system and using this optical system to picture the matter to be measured and displaying it on a TV monitor whenever a state of the matter to be measured is required to be detected. CONSTITUTION:A semiconductor wafer whose pre-alignment is finished is carried/ positioned on a measurement stage by a carrier arm 5. Whenever a state of a chip on measurement is required to be observed, the semiconductor wafer 8 on measurement is moved within a usable range of an optical system 6, and its position alignment to the optical system is performed on the basis of a predetermined reference point. Subsequently, light from a light source 9 is radiated on a surface of the semiconductor wafer 8 whose state is required to be observed. Since the image picturing by the use of a CCD camera 12 is occasionally hindered due to a dark field of vision, light sources 9 are installed on a plurality of positions, for example, on three positions. The light source 9 installed above perpendicularly to the semiconductor wafer 8 is used on a bright field of vision. In succession, a CCD camera is used to picture the surface of this semiconductor wafer 8 through a half mirror 10, and this pictured image is displayed on a TV monitor 11.

Description

【発明の詳細な説明】 【発明の目的〕 (産業上の利用分野) 本発明は測定装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a measuring device.

(従来の技術) 現在、半導体チップ等の良否を判定する測定装置には、
テスターを付属したプローバと称するもの等がある。
(Prior art) Currently, measuring devices for determining the quality of semiconductor chips, etc.
There is a type called a prober that comes with a tester attached.

このプローバによる測定は、半導体ウェハを載置台に載
置し、プローブ針を備えたプローブカードをプローバ上
部に設置する。そして、プローブ針を備えたプローブカ
ードの直下に載置台を移動し、載置台を回転させて載置
台の移動方向と半導体ウェハ上に形成した半導体チップ
間のスクライブラインの方向を合わせる。その後プロー
ブ針を上記半導体チップ上の電極パッドに合わせ、電気
信号により測定を行なった後、載置台を半導体チップの
大きさに合わせて移動することにより、1チツプずつ検
査を行なう。
In measurement using this prober, a semiconductor wafer is placed on a mounting table, and a probe card equipped with probe needles is placed above the prober. Then, the mounting table is moved directly below the probe card equipped with probe needles, and the mounting table is rotated to align the moving direction of the mounting table with the direction of the scribe line between the semiconductor chips formed on the semiconductor wafer. Thereafter, the probe needles are aligned with the electrode pads on the semiconductor chips, measurements are made using electrical signals, and then the mounting table is moved according to the size of the semiconductor chips to test each chip one by one.

この時、上記半導体ウェハ上におけるチップの状態、マ
ーキング状態、針跡の状態等の検出に。
At this time, it is used to detect the state of chips, markings, needle marks, etc. on the semiconductor wafer.

プローブカード、テストヘッドを介して配設されたマイ
クロスコープを使用していた。
A probe card was used, which was placed through the test head and a microscope.

(発明が解決しようとする問題点) しかしながら上記説明の従来の技術ではプローバのマイ
クロスコープを使用して検出を行なう為、倍率が悪く細
かい検出はできかねていた。その為。
(Problems to be Solved by the Invention) However, in the conventional technique described above, since detection is performed using a microscope of a prober, the magnification is poor and detailed detection cannot be performed. For that reason.

特別な検出が必要な場合、測定装置より測定中である半
導体ウェハを手動により取り出し、高倍率可能な顕微鏡
にて検出を行ない、手間がかかるという問題点があった
When special detection is required, the semiconductor wafer being measured is manually removed from the measuring device and detected using a microscope capable of high magnification, which is a time-consuming problem.

また、マイクロスコープを使用して検出する際に、プロ
ーブ針が邪魔をして半導体ウェハ表面の検出が困難にな
るという照明等の位置等にも問題があった。
Furthermore, there is also a problem with the position of lighting, etc., which makes it difficult to detect the semiconductor wafer surface because the probe needle gets in the way when using a microscope for detection.

本発明は上記点に対処してなされたもので、被測定体の
状態検出の必要に応じて高倍率で検出することが可能な
測定装置を提供するものである。
The present invention has been made in view of the above-mentioned problems, and provides a measuring device capable of detecting the state of an object to be measured at a high magnification according to the need.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段) 本発明は、被測定体の測定において、上記被測定休の状
態観視時上記被測定体を撮像光学系の視野内に測定部か
ら移送位置決めして、上記被測定体を撮像し、 これを
TVモニターに映し出す手段を設けてなることを特徴と
する。
(Means for Solving the Problems) The present invention, in measuring the object to be measured, transports and positions the object to be measured from the measuring section within the field of view of the imaging optical system when observing the measurement object in the rest state. The present invention is characterized in that it is provided with means for taking an image of the object to be measured and displaying the image on a TV monitor.

(作 用) 被測定体の状態検出の必要が生じた時には随時、上記被
測定体を光学系の使用可能な範囲に搬送位置決めし、上
記光学系により上記被測定体を撮像してTVモニターに
映し出すことにより、高倍率で検出することが可能とな
る。
(Function) Whenever it becomes necessary to detect the state of the object to be measured, the object to be measured is transported and positioned within the usable range of the optical system, and an image of the object to be measured is taken by the optical system and displayed on a TV monitor. By projecting the image, it becomes possible to detect it at high magnification.

(実施例) 以下、本発明測定装置を半導体検査工程に適用した一実
施例につき図面を参照して説明する。
(Example) Hereinafter, an example in which the measuring device of the present invention is applied to a semiconductor inspection process will be described with reference to the drawings.

第1図において、複数枚の被測定体例えば半導体ウェハ
を収納可能にウェハカセットωが例えば2つ設けられ、
このウェハカセットωから上記半導体ウェハを挿出入自
在に真空吸着ピンセット■が設けられている。この真空
吸着ピンセット■により上記ウェハカセットのから挿出
した半導体ウェハを、半導体ウェハのプリアライメント
を行なうプリアライメントステージ■と半導体ウニ八を
測定する際に載置する測定ステージ(イ)に必要に応じ
て搬送する搬送アーム■が一端を中心として回転自在に
設けられている。上記半導体ウェハを光学系0を内蔵し
た光学系ブリッジ■が測定装置端部に設けられている。
In FIG. 1, for example, two wafer cassettes ω are provided to accommodate a plurality of objects to be measured, such as semiconductor wafers, and
Vacuum suction tweezers (2) are provided to allow the semiconductor wafer to be inserted into and taken out from the wafer cassette (ω). The semiconductor wafer inserted from the wafer cassette using the vacuum suction tweezers (■) is placed on the pre-alignment stage (■) for pre-aligning the semiconductor wafer and the measurement stage (A) on which the semiconductor wafer is placed when measuring the semiconductor wafer, as necessary. A transport arm (2) is provided rotatably around one end. An optical system bridge (2) incorporating the optical system 0 for the semiconductor wafer is provided at the end of the measuring device.

上記光学系は第2図に示すように、測定ステージに)に
載置した半導体ウェハ■の表面に光を照射する為に光源
■が複数箇所例えば3箇所に配設されている。上記半導
体ウニ八■の表面を撮像自在にハーフミラ−(10)を
介してTVモニター(11)に接続されている撮像系例
えばCCDカメラ(12)が設けられている。 このよ
うにして測定装置が構成されている。
As shown in FIG. 2, the optical system described above includes a plurality of light sources (2) arranged at three locations, for example, in order to irradiate light onto the surface of a semiconductor wafer (2) placed on a measurement stage (2). An imaging system such as a CCD camera (12) is provided which is connected to a TV monitor (11) via a half mirror (10) so as to freely take images of the surface of the semiconductor sea urchin. The measuring device is configured in this way.

次に、上述した測定装置による半導体ウェハの測定方法
を説明する。
Next, a method of measuring a semiconductor wafer using the above-mentioned measuring device will be explained.

第1図において、複数枚の半導体ウェハを収納したウェ
ハカセット■から真空吸着ピンセット■により上記半導
体ウェハを吸着保持し、挿出する。
In FIG. 1, a semiconductor wafer is suctioned and held by vacuum suction tweezers (2) and inserted from a wafer cassette (2) containing a plurality of semiconductor wafers.

この挿出した半導体ウェハを一端を中心として回転自在
である搬送アーム■によりプリアライメントステージ■
へ搬送する。このプリアライメントステージ■により上
記半導体ウェハのオリエンテーション・フラットを図示
しない透過型センサー例えばフォトインタラプタ等によ
り検出し、プリアライメントを行なう、このプリアライ
メントを終えた半導体ウェハを1上記搬送アーム■によ
り測定ステージに)へ搬送し載置する。この測定ステー
ジに)は上記半導体ウェハを保持例えば吸着保持し、光
学系ブリッジ■直下へ移動して内蔵した光学系■により
アライメントを行なう、そして標準の半導体ウェハ上に
て少なくとも1点以上の基準点を設け、これを予め記憶
する。これは第3図に示すように、半導体ウェハ(ハ)
上に例えば中心を基準点(A)、左端部を基準点(B)
、上端部を基準点(C)、右端部を基準点(D)、下端
部を基準点(Eりとして光学系によりチェックし、これ
で上記半導体ウェハ■上に形成したチップの状態や半導
体ウェハ■の大きさ、測定ステージに)の位置等を検出
し記憶する。そしてこの半導体ウェハ(ハ)をプローブ
カード(図示せず)の直下である測定部へX−Y移動機
構(図示せず)により搬送し、上記チップ上に複数形成
した電極パッドと上記プローブカードに複数個設けたプ
ローブ針の位置を合わせる針合わせを行ない、この後上
記半導体ウェハの特性測定を行なう、この時、例えば測
定中であるチップの状態明視の必要が生じた場合、随時
測定中である半導体ウェハ■を光学系0を使用可能な範
囲に移動し、予め定めておいた基準点を基にして上記光
学系0と位置合わせをする。そして、上記状態明視の必
要が生じた半導体ウェハ(ハ)の表面に光源0により光
を照射するが、暗視野によりCCDカメラ(12)で撮
像しにくい場合がある為、複数箇所例えば3箇所に光源
0を設け、上記半導体ウェハ■と直交する上部に設けた
光源■を明視野の際使用し、′斜め照射可能に2箇所に
設けた光源■を暗視野の際に使用するが、上記暗視野の
程度に応じて上記2箇所に設けた光源■を切り換える。
This inserted semiconductor wafer is placed on a pre-alignment stage by a transfer arm that is rotatable around one end.
Transport to. This pre-alignment stage (1) detects the orientation flat of the semiconductor wafer using a transmission type sensor (not shown), such as a photointerrupter, and performs pre-alignment.The semiconductor wafer that has undergone pre-alignment is transferred to the measurement stage by the transfer arm (1). ) and place it there. This measurement stage) holds the semiconductor wafer, for example, holds it by suction, moves it directly under the optical system bridge and performs alignment using the built-in optical system, and at least one reference point on the standard semiconductor wafer. and store it in advance. This is a semiconductor wafer (ha) as shown in Figure 3.
For example, set the center as the reference point (A) and the left end as the reference point (B).
, the upper end is checked as a reference point (C), the right end as a reference point (D), and the lower end as a reference point (E). (2) Detect and store the size, position, etc. of (on the measurement stage). This semiconductor wafer (c) is then transported by an X-Y moving mechanism (not shown) to the measurement section directly under the probe card (not shown), and the electrode pads formed on the chip are connected to the probe card. Needle alignment is performed to align the positions of multiple probe needles, and then the characteristics of the semiconductor wafer are measured.At this time, for example, if it is necessary to clearly see the state of the chip being measured, it may be necessary to change the position of the probe needles at any time during the measurement. A certain semiconductor wafer (2) is moved to a range where optical system 0 can be used, and aligned with optical system 0 based on a predetermined reference point. Light is then irradiated from light source 0 onto the surface of the semiconductor wafer (c) that requires clear vision in the above-mentioned state, but since it may be difficult to image with the CCD camera (12) due to the dark field, there are multiple locations, for example, three locations. Light source 0 is provided at The light sources (2) provided at the two locations are switched depending on the degree of dark field.

そしてこの半導体ウェハ0表面をCCDカメラ(12)
でハーフミラ−(lO)を介して撮像し、この撮像した
画像をTVモニター(11)に映し出す。
Then, the surface of this semiconductor wafer 0 is scanned by a CCD camera (12).
An image is captured through a half mirror (lO), and the captured image is displayed on a TV monitor (11).

上記CCDカメラ(12)で半導体ウェハ0表面を撮像
する際1倍率を複数段階例えば2段階切り換え可能に設
け、例えば低倍率として9インチTVモニター全体に半
導体ウェハ上14膣角の画像を映し出す倍率、高倍率と
して9インチTVモニター全体に半導体ウェハ上800
p角の画像を映し出す倍率に設定しておくことにより、
必要に応じて倍率を切り換える。
When imaging the surface of the semiconductor wafer 0 with the CCD camera (12), the magnification is set to be switchable in a plurality of stages, for example, two stages, and for example, as a low magnification, an image of 14 vaginal angles on the semiconductor wafer is displayed on the entire 9-inch TV monitor; High magnification as 800mm on semiconductor wafer across 9 inch TV monitor
By setting the magnification to display a p-angle image,
Change the magnification as necessary.

そして上記半導体ウェハ■の状態明視が終了した場合、
中断していた半導体ウェハ(ハ)の測定を再開し、また
、上記半導体ウェハ(へ)の他部分も確認する必要のあ
る場合は、上記半導体ウェハ(ハ)をマニュアル移動例
えばジJイスティック(図示せず)により移動して同様
に状態明視を行なう。
Then, when clear vision of the semiconductor wafer ■ is completed,
If it is necessary to resume the interrupted measurement of the semiconductor wafer (c) and also check other parts of the semiconductor wafer (c), manually move the semiconductor wafer (c), for example, by moving the semiconductor wafer (c) manually. (not shown) to perform state clear vision in the same way.

以上説明した半導体ウェハ(ハ)の状態検出のフローチ
ャートを第4図に示す。
A flowchart for detecting the state of the semiconductor wafer (c) described above is shown in FIG.

上記実施例では半導体ウェハ測定中に状態明視を行なう
処理について説明したが、81!定中に限定されるもの
ではなく、m定前、測定後でも同様な処理で同様な効果
を得ることができる。
In the above embodiment, the process of clearly viewing the state during semiconductor wafer measurement has been described, but 81! The present invention is not limited to the measurement, and the same effect can be obtained by performing similar processing before and after measurement.

以上説明したようにこの実施例によれば、半導体ウェハ
のアライメントの際に使用した光学系を流用して、半導
体ウェハの状態明視を行なうため、低コストにより行な
うことができる。
As described above, according to this embodiment, the optical system used for alignment of the semiconductor wafer is used to clearly see the state of the semiconductor wafer, so that the alignment can be performed at low cost.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、被測定体の状態明
視の必要が生じた時には随時、上記被測定体を光学系の
使用可能な範囲に搬送位置決めし、上記光学系により上
記被測定体を撮像してTVモニターに映し出すことによ
り高倍率で明視することが可能となる。
As explained above, according to the present invention, whenever it becomes necessary to clearly see the state of the object to be measured, the object to be measured is transported and positioned within a usable range of the optical system, and the object to be measured is transported and positioned within the usable range of the optical system. By capturing an image of the body and displaying it on a TV monitor, it becomes possible to see clearly at high magnification.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明装置の一実施例を説明する為の測定装置
の構成図、第2図は本発明装置の一実施例を説明する為
の光学系の構成図、第3図は基準点の図、第4図は本発
明装置の処理の一実施例であるフローチャートを示した
ものである。 6・・・光学系、     7・・・光学系ブリッジ、
8・・・半導体ウェハ、  9・・・光源、10・・・
ハーフミラ−、11・・・TVモニター、12・・・C
CDカメラ。 特許出願人  東京エレクトロン株式会社第1図 第2図 第3図
Fig. 1 is a configuration diagram of a measuring device to explain an embodiment of the device of the present invention, Fig. 2 is a configuration diagram of an optical system to explain an embodiment of the device of the present invention, and Fig. 3 is a reference point diagram. FIG. 4 shows a flowchart of an embodiment of the processing of the apparatus of the present invention. 6...Optical system, 7...Optical system bridge,
8... Semiconductor wafer, 9... Light source, 10...
Half mirror, 11...TV monitor, 12...C
CD camera. Patent applicant: Tokyo Electron Ltd. Figure 1 Figure 2 Figure 3

Claims (3)

【特許請求の範囲】[Claims] (1)被測定体の測定において、上記被測定体の状態観
視時上記被測定体を撮像光学系の視野内に測定部から移
送位置決めして、上記被測定体を撮像し、これをTVモ
ニターに映し出す手段を設けてなることを特徴とする測
定装置。
(1) In measuring the object to be measured, when observing the state of the object to be measured, the object to be measured is transferred from the measuring section to the field of view of the imaging optical system, and the object to be measured is imaged, and this is displayed on the TV. A measuring device characterized by being provided with means for displaying images on a monitor.
(2)被測定体の位置決め撮像手段は、標準の被測定体
上に少なくとも1点以上の基準点を設けて予め記憶して
おき、上記被測定体の基準点と上記予め記憶した基準点
が一致する如く撮像系および被測定体を相対的に移動さ
せて位置合わせした後、この基準点で上記光学系の焦点
を合わせることを特徴とする特許請求の範囲第1項記載
の測定装置。
(2) The positioning and imaging means for the object to be measured is provided with at least one reference point on a standard object to be measured and memorized in advance so that the reference point of the object to be measured and the pre-stored reference point are 2. The measuring device according to claim 1, wherein after the imaging system and the object to be measured are relatively moved and aligned so as to match, the optical system is focused at this reference point.
(3)光学系による撮像の倍率を少なくとも2段階に切
り換え可能にすることを特徴とする特許請求の範囲第1
項記載の測定装置。
(3) Claim 1, characterized in that the magnification of imaging by the optical system can be switched in at least two stages.
Measuring device as described in section.
JP10067487A 1987-04-23 1987-04-23 Measuring device Pending JPS63265441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10067487A JPS63265441A (en) 1987-04-23 1987-04-23 Measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10067487A JPS63265441A (en) 1987-04-23 1987-04-23 Measuring device

Publications (1)

Publication Number Publication Date
JPS63265441A true JPS63265441A (en) 1988-11-01

Family

ID=14280306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10067487A Pending JPS63265441A (en) 1987-04-23 1987-04-23 Measuring device

Country Status (1)

Country Link
JP (1) JPS63265441A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121638A (en) * 1982-01-12 1983-07-20 Nec Home Electronics Ltd Checking method for probe for wafer prober
JPS6024030A (en) * 1983-07-19 1985-02-06 Telmec Co Ltd Semiconductor wafer prober
JPS61263220A (en) * 1985-05-17 1986-11-21 Canon Inc Positioning device
JPS6235640A (en) * 1985-08-09 1987-02-16 Nec Kyushu Ltd Pre-alignment mechanism for semiconductor substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121638A (en) * 1982-01-12 1983-07-20 Nec Home Electronics Ltd Checking method for probe for wafer prober
JPS6024030A (en) * 1983-07-19 1985-02-06 Telmec Co Ltd Semiconductor wafer prober
JPS61263220A (en) * 1985-05-17 1986-11-21 Canon Inc Positioning device
JPS6235640A (en) * 1985-08-09 1987-02-16 Nec Kyushu Ltd Pre-alignment mechanism for semiconductor substrate

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