JPS63263815A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPS63263815A JPS63263815A JP9886087A JP9886087A JPS63263815A JP S63263815 A JPS63263815 A JP S63263815A JP 9886087 A JP9886087 A JP 9886087A JP 9886087 A JP9886087 A JP 9886087A JP S63263815 A JPS63263815 A JP S63263815A
- Authority
- JP
- Japan
- Prior art keywords
- type
- surface acoustic
- acoustic wave
- film thickness
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 2
- 229940075591 dalay Drugs 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明ｄＲＡｃ （リフレクティフ”・アレイ・コンプ
レッサ）型弾性表面波（ＳＡＷ）分散型遅延線の金属反
射格子の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a metal reflective grating of a dRAc (Reflective Array Compressor) type surface acoustic wave (SAW) distributed delay line.
従来％ＲＡＣ型ＳＡＷ分散型）Ｖ延線の反射格子の構造
は、基板上に一定な膜厚の金属膜を形成することによっ
て作られていた。Conventionally, the structure of the reflection grating of the %RAC type SAW distributed type) V extended wire was made by forming a metal film of a constant thickness on a substrate.
上述の従来の反射格子構造では、入出カドランスシェー
ブから遠く離れた反射格子で反射される弾性表面波は摂
動を受け、減衰の為に反射係数が落ち、帯域内特性に傾
斜を鳴していた。In the conventional reflection grating structure described above, the surface acoustic waves reflected by the reflection grating far from the input and output quadrangle shavers are perturbed, the reflection coefficient drops due to attenuation, and the in-band characteristics become sloped. .
本発明の弾性表面波装置は、金属ＢＡＣ型分数分散型遅
延線成す・る反射格子のアルミニウム膜厚奮入出カドラ
ンスジューサから離れるにしたがって厚くした構造を有
している。The surface acoustic wave device of the present invention has a structure in which the aluminum film of the reflection grating, which is a metal BAC type fractional dispersion delay line, increases in thickness as it goes away from the output quadrature transducer.
次に本発明の実施例を図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を示し、（ａ）は平面図。FIG. 1 shows an embodiment of the present invention, and (a) is a plan view.
［ｂｌｒｉ断面図である。図において、基板であるＢｉ
ｔ鵞Ｇｅｍ、、結晶１５の左側に人出カドランスシュー
ブ１１．１３が設けられ、膜ル傾斜分布１６を有する所
定の間隔で配置された反射格子１２．１４が構成されて
金属ＲＡＣ型ＳＡＷ分散型遅延紛を成している。この遅
延線の特性が第２図に示すダウンチャーブ特性である。[This is a cross-sectional view of blri. In the figure, the substrate Bi
A metal RAC type SAW is provided with a quadrangle shovel 11.13 on the left side of the crystal 15, and reflection gratings 12.14 arranged at predetermined intervals having a film gradient distribution 16. It constitutes a distributed delay conflict. The characteristic of this delay line is the downchirve characteristic shown in FIG.
従来の反射格子の膜厚が一定の場合ｒｉ第３図の様な傾
斜した帯域内特性となっていた。すなわち、高域の周仮
数は入出カドランスジ＝−サ１１，１３に近い反射格子
で反射でれ、低域０１１４ｒｉ人出力ＩＤ′１゛（イン
タデジタル電極）から離れた反射格子で反射されていた
。When the film thickness of a conventional reflection grating is constant, it has a sloped in-band characteristic as shown in FIG. That is, the high-frequency mantissa was reflected by a reflection grating close to the input/output quadrature switches 11 and 13, and was reflected by a reflection grating distant from the low-frequency output ID'1 (interdigital electrode).
しかし、本発明の様な膜厚分布に反射格子を形成するこ
とにより、第２図に示すように帯域内特性が安定化した
。本発明の実施例の素子の製造方法としては、第４図の
様に真空ペルジャー内で電子ビーム４２でルツボ４３か
らアルミを蒸発（矢印４４ｒｉ蒸発したアルばを示す）
させる。ＨＧＯ基板４１を蒸着源から第４図のように蒸
発したアルミが多い位置ａから少ない位ｆｂＯ間におく
ことにより、第１図の構造の金Ｆｊ！ＲＡｃ型分散型遅
延線が得られる。However, by forming a reflection grating in the film thickness distribution as in the present invention, the in-band characteristics were stabilized as shown in FIG. As shown in FIG. 4, aluminum is evaporated from a crucible 43 using an electron beam 42 in a vacuum Pelger (arrow 44ri indicates the evaporated aluminum).
let By placing the HGO substrate 41 from the evaporation source as shown in FIG. 4 between a position a where there is a large amount of evaporated aluminum and a position where there is a small amount of evaporated aluminum fbO, gold Fj of the structure shown in FIG. A RAc type distributed delay line is obtained.
以上説明した様に本発明の弾性表面波装置では比較的簡
単な構成で金酋ＲＡＣ型分散型遅廷線の特性改善ができ
る。As explained above, the surface acoustic wave device of the present invention can improve the characteristics of the RAC-type distributed delay line with a relatively simple configuration.
第１図ｆａｔ 、 ｆｂｌｆ１本発明の実施例を示し、
ｆａ）ｉ平面図−（ｔ））ｄ（ａｌのＡ−Ａ断面図、第
２図ｒｉ第１図の素子の揚幅竹性を示す線図、第３図ｒ
ｔ従来のＫＡＣ型５Ａｖｖ分散型遅延紳の振幅特性を示
す線図、第４図は本発明の素子の製造方法を説明するた
めの図である。FIG. 1 shows an embodiment of the present invention,
fa) i Plan view - (t)) d (A-A sectional view of al, Fig. 2 ri Diagram showing the lift width of the element in Fig. 1, Fig. 3 r
FIG. 4 is a diagram showing the amplitude characteristics of a conventional KAC type 5Avv distributed delay circuit.
Claims (1)
型弾性表面波分散型遅延線を構成する反射格子が基板上
に形成された弾性表面波装置において、前記反射格子の
膜厚分布が、入出力交差状電極から離れるにしたがって
、直線的に厚くなる様にしたことを特徴とする弾性表面
波装置。Metal Reflective, Array, Compressor (RAC)
In a surface acoustic wave device in which a reflection grating constituting a surface acoustic wave dispersion type delay line is formed on a substrate, the film thickness distribution of the reflection grating increases linearly as it moves away from the input/output intersecting electrodes. A surface acoustic wave device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9886087A JPS63263815A (en) | 1987-04-21 | 1987-04-21 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9886087A JPS63263815A (en) | 1987-04-21 | 1987-04-21 | Surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63263815A true JPS63263815A (en) | 1988-10-31 |
Family
ID=14230976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9886087A Pending JPS63263815A (en) | 1987-04-21 | 1987-04-21 | Surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63263815A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02186708A (en) * | 1989-01-13 | 1990-07-23 | Nec Corp | Surface acoustic wave device |
| WO1999005788A1 (en) * | 1997-07-28 | 1999-02-04 | Kabushiki Kaisha Toshiba | Surface acoustic wave device and method of producing the same |
-
1987
- 1987-04-21 JP JP9886087A patent/JPS63263815A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02186708A (en) * | 1989-01-13 | 1990-07-23 | Nec Corp | Surface acoustic wave device |
| WO1999005788A1 (en) * | 1997-07-28 | 1999-02-04 | Kabushiki Kaisha Toshiba | Surface acoustic wave device and method of producing the same |
| US6377138B1 (en) | 1997-07-28 | 2002-04-23 | Kabushiki Kaisha Toshiba | Surface acoustic wave device with a layered conductive film and method of producing the same |
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