JPS63256903A - Formation of light reflecting groove of optical integrated circuit - Google Patents
Formation of light reflecting groove of optical integrated circuitInfo
- Publication number
- JPS63256903A JPS63256903A JP9225387A JP9225387A JPS63256903A JP S63256903 A JPS63256903 A JP S63256903A JP 9225387 A JP9225387 A JP 9225387A JP 9225387 A JP9225387 A JP 9225387A JP S63256903 A JPS63256903 A JP S63256903A
- Authority
- JP
- Japan
- Prior art keywords
- light reflecting
- aperture
- optical substrate
- laser
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000009257 reactivity Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光集積回路の光反射溝形成方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for forming light reflecting grooves in optical integrated circuits.
信号を導く手段として、電子回路ではプリント基板等の
回路配線、集積回路ではウェーハ上のパターン配線等が
使用されているのと同じように、光集積回路では光導波
路が用いられる。As means for guiding signals, optical integrated circuits use optical waveguides, just as electronic circuits use circuit wiring such as printed circuit boards, and integrated circuits use pattern wiring on wafers.
光集積回路における折れ曲がり光導波路では、折れ曲が
り部に光を反射させる光反射溝が必要である。折れ曲が
り光導波路の光の損失を小さくするなめに光反射溝の側
面は滑らかであることが要求される。A bent optical waveguide in an optical integrated circuit requires a light reflecting groove at the bent portion to reflect light. In order to reduce the loss of light in the bent optical waveguide, the side surfaces of the light reflecting groove are required to be smooth.
光反射溝の適切な形成方法はまだ確立しているとは言え
ない現状である。At present, it cannot be said that an appropriate method for forming light reflecting grooves has been established yet.
従来の一般的な光反射溝の形成方法としては、レジスト
マスクを用いてイオンエツチングするイオンエツチング
法がある。As a conventional and common method for forming light reflecting grooves, there is an ion etching method in which ion etching is performed using a resist mask.
このイオンエツチング法によると、レジストマスクの微
小なぎざぎざに起因して、形成された光反射溝の側面に
数１０００人のオーダーの微小なぎざぎざが残り、光導
波路の光の損失を増加させるという欠点があり、このこ
とは例えば、昭和６０年度電気通信学会総合全国大会講
演集９６６に記載されている。This ion etching method has the disadvantage that, due to minute burrs in the resist mask, minute burrs on the order of several thousand lines remain on the side surfaces of the formed light reflection grooves, increasing light loss in the optical waveguide. This is described, for example, in Proceedings of the 1985 National Conference of the Institute of Electrical Communication Engineers, No. 966.
上述した従来の光集積回路の光反射溝形成方法は、レジ
ストマスクを用いてイオンエッチンクする方法となって
いるので、形成された光反射溝の側面に微小なぎさきさ
゛か生じ、光の損失か増加するという欠点がある。The above-mentioned conventional method for forming light reflection grooves in optical integrated circuits uses ion etching using a resist mask, so minute gaps may occur on the sides of the formed light reflection grooves, resulting in light loss. The disadvantage is that it increases.
本発明の目的は、側面を滑らかに形成することかてき、
損失を低減することかできる光集積回路の光反射溝形成
方法を提供することにある。The purpose of the present invention is to form a smooth side surface,
An object of the present invention is to provide a method for forming a light reflecting groove in an optical integrated circuit, which can reduce loss.
本発明の光集積回路の光反射溝形成方法は、光反射溝を
形成する部分を開口した開口部をもつレーザ反射膜を光
学基板上に形成し、前記開口部に露出した前記光学基板
の表面を前記光学基板に対する熱反応性をもつエツチン
グ液に浸し、前記開口部にこの開口部の幅より大きい直
径をもつ連続性のレーザビームのスポットを照射、走査
し光反射溝を形成する構成を有している。A method for forming a light reflection groove in an optical integrated circuit according to the present invention includes forming a laser reflection film on an optical substrate having an opening in which a portion where the light reflection groove is to be formed is formed, and a surface of the optical substrate exposed to the opening. is immersed in an etching solution that is thermally reactive to the optical substrate, and the opening is irradiated and scanned with a continuous laser beam spot having a diameter larger than the width of the opening to form a light reflecting groove. are doing.
光学基板上に開口部をもつレーザ反射膜を形成した被加
工物をこの光学基板と熱反応性を有するエツチング液中
に配置して浸し、前記被加工物のレーザ反射膜の開口部
にレーザビームを照射、走査すると、付近がレーザ照射
により局部的に高温になり、熱反応性のエツチング液に
より光学基板が選択的にエツチングされ、開口部のとこ
ろに光反射溝が形成される。A workpiece on which a laser reflection film with an opening is formed on an optical substrate is placed and immersed in an etching solution that is thermally reactive with the optical substrate, and a laser beam is applied to the opening of the laser reflection film on the workpiece. When the laser beam is irradiated and scanned, the area becomes locally high temperature due to the laser irradiation, and the optical substrate is selectively etched by the thermally reactive etching liquid, forming a light reflecting groove at the opening.
この場合、レーザビームを連続発振させ、かつレーザビ
ームのスボツ）・径を開口部の幅より大きくしてレーザ
ビームの照射、走査を連続的に行うことにより、ガウス
分布を有するレーザエネルギーの両端をカットすると共
に光学基板とエツチング液との熱化学反応が間欠性をと
もなうことなく連続的に起きるので、形成された光反射
溝の側面は滑らかな面となる。In this case, by continuously oscillating the laser beam, making the diameter of the laser beam larger than the width of the aperture, and continuously irradiating and scanning the laser beam, both ends of the laser energy having a Gaussian distribution can be As the optical substrate is cut, the thermochemical reaction between the optical substrate and the etching solution occurs continuously without any intermittency, so the side surfaces of the formed light reflecting grooves become smooth surfaces.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を説明するための被加工物及
び加工装置の部分断面側面図である。FIG. 1 is a partially sectional side view of a workpiece and a processing device for explaining one embodiment of the present invention.
まず、ｌ、＋ＮｂＯ５の光学基板１０の表面上に、光反
射溝を形成するための幅２μｍの開口部１２をもつレー
ザ反射膜１１をＡｕ膜１μｍをメッキして形成する。First, a laser reflective film 11 having an opening 12 with a width of 2 μm for forming a light reflecting groove is formed on the surface of an optical substrate 10 made of l,+NbO5 by plating a 1 μm Au film.
次に、光学基板１０のレーザ反射膜１１を形成した面を
下にして加工装置の容器４に入ったエツチング液５に浸
し、開口部１２に露出した光学基板１０の表面とエツチ
ング液５とを接触させる。Next, the surface of the optical substrate 10 on which the laser reflection film 11 is formed is immersed in the etching liquid 5 in the container 4 of the processing device, so that the surface of the optical substrate 10 exposed to the opening 12 and the etching liquid 5 are immersed. bring into contact.
エツチング液５はり、ＮｂＯ，基板と熱反応性を有する
水酸化カリウム水溶液（重量比３０％）に炭素微粉末（
重量比１％）を加えたものである。Etching solution 5, NbO, potassium hydroxide aqueous solution (30% by weight) that has thermal reactivity with the substrate, carbon fine powder (
1% by weight).
炭素微粉末はレーザ吸収体として作用する。The fine carbon powder acts as a laser absorber.
次に、アルゴン・レーザ発振器１からレーザパワーＩＷ
のレーザを発振させてミラー２によりレーザビームＬの
方向を変え、レンズ３によりレーザビームＬを集束させ
、光学基板１０の開口部１２に照射する。Next, the laser power IW from the argon laser oscillator 1 is
The laser beam L is oscillated, the direction of the laser beam L is changed by the mirror 2, the laser beam L is focused by the lens 3, and is irradiated onto the opening 12 of the optical substrate 10.
このときのレーザビームＬのスポット径は開口部１２の
幅２μｍより大きい５μｍとし、ガウス−５＝
分布を有するレーザエネルギー分布の両端をレーザ反射
膜１１でカットする。The spot diameter of the laser beam L at this time is set to 5 μm, which is larger than the 2 μm width of the opening 12, and both ends of the laser energy distribution having a Gauss-5=distribution are cut by the laser reflective film 11.
そして、移動台６を用いて容器４を速度２００μｍ ／
ｓ ｅ ｃで動かし、開口部１２に添ってレーザビー
ムのスポットを往復運動させ、光学基板１０の開口部１
２のところに光反射溝を形成する。このとき、例えば１
００μｍ幅を３００回往復させると、５分間加工で深さ
７μｍの滑らかな光反射溝を形成することができる。な
お加工中はホース７、ポンプ８．タンク９によりエツチ
ング液５を循環させる。Then, using the moving stage 6, the container 4 is moved at a speed of 200 μm/
s e c to reciprocate the laser beam spot along the aperture 12 , and
A light reflecting groove is formed at 2. At this time, for example, 1
If the groove is reciprocated 300 times with a width of 00 μm, a smooth light reflecting groove with a depth of 7 μm can be formed in 5 minutes of processing. During processing, hose 7, pump 8. The etching solution 5 is circulated through the tank 9.
第２図に上記実施例を適用してできた被加物の光反射溝
の断面図を示す。FIG. 2 shows a cross-sectional view of a light-reflecting groove of a workpiece formed by applying the above embodiment.
光学基板１０の開口部１２のところには幅２μｍの光反
射溝１３が滑らかな側面くぎざぎざ数１００人程度）て
形成され、光導波路を通る光の損失を２ｄＢ以下の低損
失にすることができる。At the opening 12 of the optical substrate 10, a light reflection groove 13 with a width of 2 μm is formed with a smooth side surface having a knurled surface (approximately 100 grooves), and the loss of light passing through the optical waveguide can be reduced to 2 dB or less. can.
また、上述した例のように、深い光反射溝を局部的に短
時間で形成することかできる。Furthermore, as in the example described above, deep light reflecting grooves can be locally formed in a short time.
！、７６−
′ 〜
なお、本実施例においては、光学基板としてＬ＋ＮｂＯ
３基板を用いたが、石英ガラス基板。! , 76-' ~ Note that in this example, L+NbO is used as the optical substrate.
Three substrates were used, including a quartz glass substrate.
ＩｎＰ基板、ＧａＡｓ基板等を用いても良い。また、レ
ーザ反射膜の材料としてＡｕを用いたが、Ｃｒ、Ｔｉ、
Ｎｉ、Ａｇ等を用いても同様な効果が得られる。An InP substrate, a GaAs substrate, etc. may also be used. In addition, although Au was used as the material for the laser reflection film, Cr, Ti,
Similar effects can be obtained by using Ni, Ag, or the like.
以上説明したように本発明は、熱反応性のエツチング液
にレーザ反射膜の開口部を浸し、この開口部の幅より大
きい直径の連続性レーザビームのスポットを照射、走査
することにより、側面が滑らかな光反射溝を形成するこ
とができるので、光の損失を低減することができる効果
がある。As explained above, in the present invention, the opening of the laser reflective film is immersed in a heat-reactive etching liquid, and the side surface is etched by irradiating and scanning a continuous laser beam spot with a diameter larger than the width of the opening. Since smooth light reflecting grooves can be formed, there is an effect that light loss can be reduced.
また、深い溝を局部的に短時間で形成できるという利点
もある。Another advantage is that deep grooves can be formed locally in a short time.
第１図は本発明の一実施例を説明するための被加工物及
び加工装置の部分断面側面図、第２図は本発明を適用し
てできた光反射溝の一例を示す断−７・°、−７
面図である。
１・・・レーザ発振器、２・・・ミラー、３・・・レン
ズ、４・・・容器、５・・・エツチング液、６・・・移
動台、７・・・ホース、８・・・ポンプ、９・・・タン
ク、１ｏ・・・光学基板、１１・・・レーザ反射膜、１
２・・・開口部、１３・・・光反射溝。
＝８七＼FIG. 1 is a partial cross-sectional side view of a workpiece and a processing device for explaining an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing an example of a light reflecting groove formed by applying the present invention. It is a -7 degree view. DESCRIPTION OF SYMBOLS 1... Laser oscillator, 2... Mirror, 3... Lens, 4... Container, 5... Etching liquid, 6... Moving table, 7... Hose, 8... Pump , 9... Tank, 1o... Optical substrate, 11... Laser reflection film, 1
2...Aperture, 13...Light reflecting groove. =87\
Claims (1)
反射膜を光学基板上に形成し、前記開口部に露出した前
記光学基板の表面を前記光学基板に対する熱反応性をも
つエッチング液に浸し、前記開口部にこの開口部の幅よ
り大きい直径をもつ連続性のレーザビームのスポットを
照射、走査し光反射溝を形成することを特徴とする光集
積回路の光反射溝形成方法。A laser reflection film having an opening in which a light reflection groove is to be formed is formed on an optical substrate, and the surface of the optical substrate exposed in the opening is immersed in an etching solution that is thermally reactive to the optical substrate. . A method for forming a light reflective groove in an optical integrated circuit, comprising: irradiating and scanning the aperture with a spot of a continuous laser beam having a diameter larger than the width of the aperture to form a light reflective groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9225387A JPS63256903A (en) | 1987-04-14 | 1987-04-14 | Formation of light reflecting groove of optical integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9225387A JPS63256903A (en) | 1987-04-14 | 1987-04-14 | Formation of light reflecting groove of optical integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63256903A true JPS63256903A (en) | 1988-10-24 |
Family
ID=14049256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9225387A Pending JPS63256903A (en) | 1987-04-14 | 1987-04-14 | Formation of light reflecting groove of optical integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63256903A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110877158A (en) * | 2019-12-09 | 2020-03-13 | 苏州中瑞智创三维科技股份有限公司 | Three-dimensional laser etching method adopting variable light spot scanning processing |
-
1987
- 1987-04-14 JP JP9225387A patent/JPS63256903A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110877158A (en) * | 2019-12-09 | 2020-03-13 | 苏州中瑞智创三维科技股份有限公司 | Three-dimensional laser etching method adopting variable light spot scanning processing |
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