JPS63254636A - Impregnated cathode - Google Patents
Impregnated cathodeInfo
- Publication number
- JPS63254636A JPS63254636A JP62086805A JP8680587A JPS63254636A JP S63254636 A JPS63254636 A JP S63254636A JP 62086805 A JP62086805 A JP 62086805A JP 8680587 A JP8680587 A JP 8680587A JP S63254636 A JPS63254636 A JP S63254636A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- impregnated
- tungsten powder
- sintered body
- ion bombardment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 238000010849 ion bombardment Methods 0.000 abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007864 aqueous solution Substances 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract description 2
- DFCYEXJMCFQPPA-UHFFFAOYSA-N scandium(III) nitrate Inorganic materials [Sc+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O DFCYEXJMCFQPPA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- -1 Bad Chemical compound 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、低温動作が可能で、しかもイオン衝撃後の電
子放出特性の回復が良好な含浸形陰極に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an impregnated cathode that is capable of low temperature operation and has good recovery of electron emission characteristics after ion bombardment.
電子放出物質に酸化スカンジウムＳｃｚ○３を含有させ
た含浸形陰極は低温動作が可能であるという特長を有す
るが、反面、イオン衝撃を受けると其の後の回復が困難
となるため、使用範囲を限定されるという問題があった
。An impregnated cathode containing scandium oxide Scz○3 as an electron-emitting substance has the feature of being able to operate at low temperatures, but on the other hand, it is difficult to recover from ion bombardment, so its range of use is limited. The problem was that it was limited.
最近、上記問題に対処するため、種々の提案が行われて
いる。これらの提案では主として、例えば、特開昭６１
−９１８２２号公報に開示されているように、電子放出
面をタングステンと酸化スカンジウムの混合層で形成し
ており、従来の酸化スカンジウム入り含浸形陰極に比較
すれば、ある程度の特性向上が見られる。しかし、依然
として本質的な解決にまで至っておらず、広く実用化さ
れるには程遠い状況にある。Recently, various proposals have been made to deal with the above problems. These proposals mainly include, for example, JP-A-61
As disclosed in Japanese Patent No. 91822, the electron emitting surface is formed of a mixed layer of tungsten and scandium oxide, and when compared with the conventional impregnated cathode containing scandium oxide, some improvement in characteristics can be seen. However, a fundamental solution has not yet been reached, and the situation is far from being widely put into practical use.
本発明は、上記従来の酸化スカンジウム入り含浸形除極
の問題点を解決した、低温動作が可能で。The present invention solves the problems of the conventional impregnated depolarization type containing scandium oxide and is capable of low-temperature operation.
しかもイオン衝撃後の回復が良好な含浸形陰模を提供す
ることを目的とする。Moreover, it is an object of the present invention to provide an impregnated negative pattern with good recovery after ion bombardment.
上記問題点を解決するために本発明においては、酸化ス
カンジウム５Ｃ２０８をドープしたタングステン粉末を
用いて多孔質力°６結体を形成し、これに従来の含浸形
陰極と同様な電子放出物質を含浸さ“せて陰極基体を構
成することとした。In order to solve the above problems, the present invention uses tungsten powder doped with scandium oxide 5C208 to form a porous solid, and this is impregnated with an electron-emitting substance similar to the conventional impregnated cathode. It was decided that the cathode substrate would be constructed using the following methods.
上記のような手段をとると、酸化スカンジウムがタング
ステンの粒子内に微細に分布しているために、たとえ電
子放出面近傍の酸化スカンジウムが、イオン衝撃によっ
てスパッタされ、一時的に消失してしまっても、直ちに
電子放出面に補給されて、仕事関数の低下に寄与するた
め、イオン衝蛤後、速やかに比較的低温に於ける電子放
出特性が回復するものと考えられる。When the above measures are taken, since scandium oxide is finely distributed within the tungsten particles, even if the scandium oxide near the electron emitting surface is sputtered by ion bombardment and temporarily disappears. It is thought that the electron emitting properties at relatively low temperatures are quickly recovered after ion bombardment, because they are immediately replenished to the electron emitting surface and contribute to lowering the work function.
まず、酸化タングステンに、Ｓｃ（ＮＯ３）３を水溶液
で約０．５重量％添加し、これを水素炉で還元して平均
粒径約５ｐＩ１１の酸化スカンジウム入り金属タングス
テン粉末を作る。次に、この金属タングステン粉末を用
いて気孔率が２０〜２５％の多孔質焼結体を形成させ、
Ｂａｄ、ＣａＯ，ＡｆｌｚＯａがモル比で、４：１：１
の電子放出物質を含浸させて陰極基体とする。First, approximately 0.5% by weight of Sc(NO3)3 is added to tungsten oxide in an aqueous solution, and this is reduced in a hydrogen furnace to produce metallic tungsten powder containing scandium oxide having an average particle size of approximately 5 pI11. Next, a porous sintered body with a porosity of 20 to 25% is formed using this metal tungsten powder,
Bad, CaO, AflzOa in a molar ratio of 4:1:1
It is impregnated with an electron-emitting substance to form a cathode substrate.
このようにして製作された含浸形陰極は、従来の酸化ス
カンジウム入り含浸形陰極と比較して、電子放出特性は
同等であった。また、アルゴン雰囲気５ Ｘ ｌ ０−
６Ｔｏｒｒ中で１．５Ａ／、ｄのエミッション電流を用
いて行ったアルゴンイオンスパッタリングの５分間実施
により、従来の酸化スカンジウム入り含浸形陰極では電
子放出量がｌ ／ ｌ ＯＰ１度に低下したのに対し、
本実施例陰極では電子放出量の低下は見られなかった。The impregnated cathode manufactured in this manner had the same electron emission characteristics as the conventional impregnated cathode containing scandium oxide. In addition, an argon atmosphere 5 X l 0-
After 5 minutes of argon ion sputtering with an emission current of 1.5 A/d at 6 Torr, the amount of electron emission decreased to 1 degree l/l OP with the conventional impregnated cathode containing scandium oxide. ,
No decrease in the amount of electron emission was observed in the cathode of this example.
実験の結果によれば、５ｃ２０ｓの添加量はＯｏ。According to the results of the experiment, the amount of 5c20s added was Oo.
１νｔ％以下では添加した効果が認められず、１０ｗｔ
％以上ではタングステンの多孔質焼結体を形成する際に
５Ｃ２０３の凝集が生じて、やはり電子放出特性の劣化
が認められた。At 1vt% or less, no effect of addition was observed, and at 10wt%
% or more, agglomeration of 5C203 occurred when forming a porous sintered body of tungsten, and deterioration of electron emission characteristics was also observed.
以上説明したように本発明によれば、比較的低温でも良
好な電子放出特性を有し、しかも、この特性が、イオン
衝撃を受けても直ちに回復する含浸形陰極が得られる。As explained above, according to the present invention, it is possible to obtain an impregnated cathode which has good electron emission characteristics even at relatively low temperatures, and which quickly recovers these characteristics even when subjected to ion bombardment.
Claims (1)
せた陰極基体を有する含浸形陰極において、前記多孔質
焼結体が酸化スカンジウムＳｃ＿２Ｏ＿３をドープした
タングステン粉末から形成されたことを特徴とする含浸
形陰極。 ２、酸化スカンジウムを０．０１〜１０重量％ドープし
た特許請求の範囲第１項記載の含浸形陰極。[Claims] 1. An impregnated cathode having a cathode substrate in which a porous sintered body of a high-melting point metal is impregnated with an electron-emitting substance, wherein the porous sintered body is made of tungsten powder doped with scandium oxide Sc_2O_3. An impregnated cathode characterized in that: 2. The impregnated cathode according to claim 1, doped with 0.01 to 10% by weight of scandium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62086805A JPS63254636A (en) | 1987-04-10 | 1987-04-10 | Impregnated cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62086805A JPS63254636A (en) | 1987-04-10 | 1987-04-10 | Impregnated cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63254636A true JPS63254636A (en) | 1988-10-21 |
Family
ID=13897016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62086805A Pending JPS63254636A (en) | 1987-04-10 | 1987-04-10 | Impregnated cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63254636A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01163941A (en) * | 1987-07-06 | 1989-06-28 | Philips Gloeilampenfab:Nv | Manufacture of scandium system cathode |
| JPH0785782A (en) * | 1990-02-09 | 1995-03-31 | Thomson Tubes Electron | Impregnation-type-cathode manufacturing method, and cathode obtained thereby |
-
1987
- 1987-04-10 JP JP62086805A patent/JPS63254636A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01163941A (en) * | 1987-07-06 | 1989-06-28 | Philips Gloeilampenfab:Nv | Manufacture of scandium system cathode |
| JPH0785782A (en) * | 1990-02-09 | 1995-03-31 | Thomson Tubes Electron | Impregnation-type-cathode manufacturing method, and cathode obtained thereby |
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