JPS63211535A - Manufacture of osmium-coated impregnated type cathode - Google Patents
Manufacture of osmium-coated impregnated type cathodeInfo
- Publication number
- JPS63211535A JPS63211535A JP2750388A JP2750388A JPS63211535A JP S63211535 A JPS63211535 A JP S63211535A JP 2750388 A JP2750388 A JP 2750388A JP 2750388 A JP2750388 A JP 2750388A JP S63211535 A JPS63211535 A JP S63211535A
- Authority
- JP
- Japan
- Prior art keywords
- osmium
- impregnated
- cathode
- coated
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052762 osmium Inorganic materials 0.000 title claims description 49
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 title claims description 49
- 230000003647 oxidation Effects 0.000 claims abstract description 28
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract description 17
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000007789 sealing Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 235000002595 Solanum tuberosum Nutrition 0.000 description 1
- 244000061456 Solanum tuberosum Species 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002907 osmium Chemical class 0.000 description 1
- 229910000487 osmium oxide Inorganic materials 0.000 description 1
- JIWAALDUIFCBLV-UHFFFAOYSA-N oxoosmium Chemical compound [Os]=O JIWAALDUIFCBLV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、含浸形陰極の電子放射効率向上のために下記
含浸形陰極の電子放射面にオスミウム（Ｏ５）の被覆層
を設けた耐酸化性のオスミウム被覆含浸形陰極に関する
ものである。Detailed Description of the Invention [Industrial Application Field] The present invention provides an oxidation-resistant cathode in which an osmium (O5) coating layer is provided on the electron emitting surface of the impregnated cathode in order to improve the electron emission efficiency of the impregnated cathode. The present invention relates to an osmium-coated impregnated cathode.
［従来の技術］
含浸形陰極は多孔質金属基体の空孔部にアルカリ土類金
属からなる電子放射物質を含浸させたものである。多孔
質金属基体としてはタングステン（Ｗ）、モリブデン（
Ｍｏ）、タンタル（ｒａ）。[Prior Art] An impregnated cathode is one in which the pores of a porous metal base are impregnated with an electron-emitting substance made of an alkaline earth metal. Tungsten (W), molybdenum (
Mo), tantalum (ra).
レニウム（Ｒｅ）、ニッケル（Ｎｉ）などの耐熱金属及
びこれらの合金が用いられる。一般には多孔質金属基体
としては、融点が高く、蒸気圧が低く、耐イオン衝撃性
が高いタングステンを用い、また電子放射物質としては
Ｂａｄ、ＣａＯ。Heat-resistant metals such as rhenium (Re) and nickel (Ni) and alloys thereof are used. Generally, tungsten, which has a high melting point, low vapor pressure, and high ion impact resistance, is used as the porous metal substrate, and Bad and CaO are used as the electron emitting substances.
ＡＱ２０３の化合物が用いられる。この含浸形陰極の動
作状態では、多孔質タングステン内に含浸された電子放
射物質がタングステンと反応して遊離バリウムを生成し
、基体内の空孔部を通って陰陽基体表面、すなわち電子
放射面に到着し、さらに表面拡散して電子放射面にバリ
ウｔ１の単原子吸着層を形成する。その結果、含浸形陰
極の仕事関数は、基体のタングステン（４，５ｅ■）及
びバリウム（２，３ｅＶ）の仕事関数より小さい１．９
〜２、ＯｅＶと低いものとなる。A compound of AQ203 is used. In the operating state of this impregnated cathode, the electron-emitting material impregnated into the porous tungsten reacts with the tungsten to generate free barium, which passes through the pores in the substrate and reaches the surface of the negative and negative substrate, that is, the electron-emitting surface. The electrons arrive at the surface and further diffuse to the surface to form a monoatomic adsorption layer of barium t1 on the electron emitting surface. As a result, the work function of the impregnated cathode is 1.9, which is smaller than the work functions of the substrates tungsten (4,5 eV) and barium (2,3 eV).
~2, OeV, which is low.
金属の熱電子放射電流密度Ｊはリチャードソン・ダッシ
ュマンの式（Ｊ ＝ Ａ Ｔ２ｅｘｐ（−ｅφ／ｋＴ）
）、（ここでＡは熱電子定数、Ｔは陰極の絶対温度、ｅ
は電子の電荷、φは仕事関数、ｋはボルツマン定数であ
る）で与えられる。すなわち、熱電子放射電流密度Ｊは
、物質からある温度でとり得る最大の飽和電流密度であ
り、温度が高い程、仕事関数が小さい程、熱電子放射電
流密度Ｊは向上する。The thermionic emission current density J of metal is calculated using the Richardson-Dushman equation (J = A T2exp (-eφ/kT)
), (where A is the thermionic constant, T is the absolute temperature of the cathode, and e
is the electron charge, φ is the work function, and k is Boltzmann's constant). That is, the thermionic emission current density J is the maximum saturation current density that can be obtained from a substance at a certain temperature, and the higher the temperature and the smaller the work function, the higher the thermionic emission current density J.
含浸形陰極はタングステン基体表面にバリウムの単原子
吸着層を形成して仕事関数を小さくシ、、低温動作で熱
電子放射電流密度を向上した陰極である。The impregnated cathode is a cathode that forms a barium monatomic adsorption layer on the surface of a tungsten substrate to reduce the work function and improve the thermionic emission current density at low temperatures.
含浸形陰極では、陰極基体の種類により電子放射特性を
向上できる。例えば、フィリップス社が提案したオスミ
ウム被覆含浸形陰極がある。これは多孔質タングステン
基板に電子放射物質を含浸した含浸形陰極の電子放射面
にオスミウムの被覆層を設けたものである。この陰極の
動作状態ではオスミウムの表面にバリウムの単原子吸着
層が形成され、タングステン基体の場合に比べてさらに
仕事関数が低下しく１．７〜１．８ｅＶ）、熱電子放射
電流密度はさらに向上する。−例としてＷを基体とする
含浸形陰極と、前記陰極の電子放射面に０．５μｍ厚の
オスミウムの被ＮＭを設けたオスミウム被覆含浸形１１
３極の１０００℃における飽和電流密度を比較すると、
前者に比べて後者のオスミウム被覆含浸形陰極では約３
倍高い飽和電流密度が得られた。In an impregnated cathode, electron emission characteristics can be improved depending on the type of cathode substrate. For example, there is an osmium-coated impregnated cathode proposed by Philips. This cathode is an impregnated type cathode in which a porous tungsten substrate is impregnated with an electron-emitting substance, and an osmium coating layer is provided on the electron-emitting surface of the cathode. In this cathode operating state, a barium monatomic adsorption layer is formed on the osmium surface, which lowers the work function even further (1.7 to 1.8 eV) than in the case of a tungsten substrate, and further improves the thermionic emission current density. do. - As an example, an osmium-coated impregnated cathode 11 has an impregnated cathode based on W, and an osmium coating NM having a thickness of 0.5 μm on the electron emitting surface of the cathode.
Comparing the saturation current density of three poles at 1000℃,
Compared to the former, the latter osmium-coated impregnated cathode has a
A twice higher saturation current density was obtained.
一方、このオスミウム被覆含浸形陰極は、被覆層の酸化
により熱電子放射特性が劣化するという欠点がある。す
なわち、オスミウムは低温で酸化され易く、オスミウム
の酸化物は蒸気圧が高いため電子管の製造途中に陰極表
面から蒸着して消失し、その結果熱電子放射特性が劣化
する。第１図（ａ）の曲線はタングステン板にオスミウ
ムを被覆した試料を大気中で熱酸化した時の重量変化（
相を経たオスミウム被覆含浸形陰極の熱電子放射特性は
劣化する。On the other hand, this osmium-coated impregnated cathode has the disadvantage that thermionic emission characteristics deteriorate due to oxidation of the coating layer. That is, osmium is easily oxidized at low temperatures, and since osmium oxide has a high vapor pressure, it evaporates from the cathode surface during the manufacture of the electron tube and disappears, resulting in deterioration of thermionic emission characteristics. The curve in Figure 1 (a) shows the weight change (
Thermionic emission characteristics of the osmium-coated impregnated cathode deteriorate after passing through the phase.
現在一般的に行われている電子管製造法では、主に第２
図に示す封止工程において陰極は酸化される。In the currently commonly used electron tube manufacturing method, the second
In the sealing process shown in the figure, the cathode is oxidized.
第２図により電子管製造法における一般的な封止工程に
ついて説明する。陰極１は、電子線集束気管４に固定さ
れる。封止工程においては、真空排気管４は保持具５に
取り付けて、電子管６に設けたネック管７の孔に沿って
挿入する。次に接続部８の周囲をガスバーナ９等で加熱
し、接続部８において真空排気管４とネック管７を接続
する。A general sealing process in the electron tube manufacturing method will be explained with reference to FIG. The cathode 1 is fixed to the electron beam focusing trachea 4 . In the sealing process, the evacuation tube 4 is attached to the holder 5 and inserted along the hole of the neck tube 7 provided in the electron tube 6. Next, the area around the connection part 8 is heated with a gas burner 9 or the like, and the evacuation pipe 4 and the neck pipe 7 are connected at the connection part 8.
この工程を電子管製造における封止工程と呼んでいる。This process is called the sealing process in electron tube manufacturing.
封止工程は一般に大気中で行われ、また陰極１の周囲は
ガスバーナ９の熱で約４００°Ｃまで昇温するから、陰
極１は酸化される。特にオスミウム被覆含浸形陰極では
、封止工程によりオスミウムが酸化蒸発して陰極表面か
ら消失し、熱電子放射特性が劣化する。The sealing process is generally performed in the atmosphere, and the temperature around the cathode 1 is raised to about 400° C. by the heat of the gas burner 9, so that the cathode 1 is oxidized. In particular, in the case of an osmium-coated impregnated cathode, osmium is oxidized and vaporized during the sealing process and disappears from the cathode surface, degrading thermionic emission characteristics.
上記封止工程において陰極１の酸化を防止し、熱電子放
射特性の劣化をなくす方法が提案された。A method has been proposed for preventing oxidation of the cathode 1 in the sealing process and eliminating deterioration of thermionic emission characteristics.
この方法は、封止工程に際し真空排気管４の一端に設け
た真空排気口１０から、チッ素、アルゴンガス等の非酸
化性のガスを導入し、陰極１の周囲を非酸化性のガス雰
囲気に置換して封止を行なう。In this method, a non-oxidizing gas such as nitrogen or argon gas is introduced from a vacuum exhaust port 10 provided at one end of a vacuum exhaust pipe 4 during the sealing process, and a non-oxidizing gas atmosphere is created around the cathode 1. Sealing is performed by replacing with .
この方法は、陰極１が酸化されずオスミウムの蒸発を防
止するのに有効である。This method is effective in preventing osmium evaporation without oxidizing the cathode 1.
［発明が解決しようとする課題］
製造の手間がかかり、また製造設備が複雑になりコスト
高になるという欠点があった。[Problems to be Solved by the Invention] There are disadvantages in that it takes time and effort to manufacture, and the manufacturing equipment becomes complicated, resulting in high costs.
本発明は上記封止工程においてオウミウム被覆含浸形陰
極が酸化処理を受けても、オスミウムが目的とする。The object of the present invention is to remove osmium even if the osmium-coated impregnated cathode is subjected to oxidation treatment in the above-mentioned sealing process.
［課題を解決するための手段］ 上記目的は、多孔質タングステン基体にＢａｄ。[Means to solve the problem] The above purpose is to provide a porous tungsten substrate with Bad.
Ｃａ Ｏ、Ａ Ｑ ２０３からなる電子放射物質を含浸
した含浸形陰極の電子放射面にオスミウムを被覆した後
、非酸化性雰囲気中で熱処理することにより達成できる
。This can be achieved by coating the electron emitting surface of an impregnated cathode impregnated with an electron emitting substance composed of CaO and AQ203 with osmium, and then heat-treating it in a non-oxidizing atmosphere.
また、熱処理温度は１０００〜１３５０℃が適当であり
、より好ましくは１１００〜１２５０℃である。Moreover, the heat treatment temperature is suitably 1000 to 1350°C, more preferably 1100 to 1250°C.
［作用コ
タングステン（Ｗ）板にオスミウム（○Ｓ）を厚さ０．
５μｍ被覆したＯ ｓ ／ Ｗ試料において、例えば真
空中で１１００℃２時間の熱処理を施すと、第１図（ｂ
）に示すようにその後大気中で３００〜６００℃で酸化
処理をしてもオスミウムが酸化蒸発することがなく、耐
酸化性のオスミウム被覆層が形成されていることがわか
る。これは熱処理により耐酸化性をもつ基体材料のタン
グステンが、オスミウム粒子間すなわち粒界を伝わって
オスミウム被膜表面までしみ出し、オスミウム被膜表面
部がタングステンとオスミウムの混在した状態になるた
めと考えられる。[Osmium (○S) is applied to a cotungsten (W) plate to a thickness of 0.
For example, when an O s / W sample coated with 5 μm is heat-treated at 1100°C for 2 hours in a vacuum, the result is as shown in Figure 1 (b
), it can be seen that osmium does not oxidize and evaporate even if it is subsequently subjected to oxidation treatment at 300 to 600° C. in the atmosphere, and an oxidation-resistant osmium coating layer is formed. This is thought to be due to the fact that the oxidation-resistant tungsten of the base material permeates through the osmium particles, that is, through the grain boundaries, to the surface of the osmium coating due to the heat treatment, resulting in a state where tungsten and osmium coexist on the surface of the osmium coating.
熱処理は非酸化性雰囲気中で行なうので、熱処理中に雰
囲気中の酸化性ガスによりオスミウムが酸化蒸発して消
耗することはない。Since the heat treatment is performed in a non-oxidizing atmosphere, osmium is not oxidized and vaporized and consumed by oxidizing gas in the atmosphere during the heat treatment.
非酸化性雰囲気としては、０２．Ｈ２Ｏ，ＣＯ２等の酸
化性のガス分圧がｌ Ｘ １０−５Ｔｏｒｒ以下の真空
、あるいは、たとえば露点−５０’Ｃ以下のアルゴン、
チッ素、水素ガス等の非酸化性ガスがある。As a non-oxidizing atmosphere, 02. Vacuum where the partial pressure of an oxidizing gas such as H2O, CO2, etc. is 1 x 10-5 Torr or less, or argon with a dew point of -50'C or less, for example,
There are non-oxidizing gases such as nitrogen and hydrogen gas.
耐酸化効果を得るための、熱処理温度と熱処理時間の関
係を第３図に示す。熱処理温度をパラメータにとり、横
軸に熱処理時間、縦軸に耐酸化効果の尺度としてのオス
ミウム減少量をとっている。FIG. 3 shows the relationship between heat treatment temperature and heat treatment time for obtaining oxidation-resistant effects. The heat treatment temperature is taken as a parameter, the horizontal axis is the heat treatment time, and the vertical axis is the amount of osmium reduction as a measure of the oxidation resistance effect.
図中、曲線１１は１０００℃熱処理、１２は１０５０°
Ｃ熱処理、１３は１１００°Ｃ熱処理、１４は１２００
’Ｃ熱処理の場合を示す。すなわち、耐酸化性のオスミ
ウム被ｒｒＩＪＶＪを形成するには、１０００℃の場合
は５時間以上、１２００’Ｃの場合は１０分以上の熱処
理が必要である。オスミウム被覆ｉ覆層の耐酸化処理効
果は１３５０°Ｃ以上でも得られるが、オスミウム被覆
含浸形陰極では熱処理温度が１３５０℃を越えると電子
放射物質が変質し、熱電子放射特性を劣化させ、寿命短
縮の原因となる。In the figure, curve 11 is heat treated at 1000°C, curve 12 is 1050°
C heat treatment, 13 is 1100 °C heat treatment, 14 is 1200 °C heat treatment
'C shows the case of heat treatment. That is, in order to form an oxidation-resistant osmium-coated rrIJVJ, heat treatment is required for 5 hours or more at 1000°C, and for 10 minutes or more at 1200'C. The oxidation-resistant effect of the osmium-coated i-coating layer can be obtained even at temperatures above 1350°C, but in the case of osmium-coated impregnated cathodes, if the heat treatment temperature exceeds 1350°C, the electron emitting material will change, the thermionic emission characteristics will deteriorate, and the service life will be shortened. This causes shortening.
〔実施例Ｊ
空孔率２６％の多孔質タングステン基体の空孔部にＢａ
ｄ、Ｃａｂ、ＡＱ２０３からなる電子放射物質を含浸し
、表面研磨により滑らかな電子放射面を形成した含浸形
陰極を作る。上記電子放射面に電子線蒸着によりオスミ
ウムを０．５μｍ厚蒸漬し、オスミウム被覆含浸形陰極
を作る。次にＩ×１Ｏ−５Ｔｏｒｒ以下の真空中で１０
００℃、２時間の熱処理をしてオスミウム被覆の耐酸化
処理をして、耐酸化性のオスミウム被覆含浸形陰極を作
る。[Example J Ba was added to the pores of a porous tungsten substrate with a porosity of 26%.
An impregnated cathode is prepared by impregnating it with an electron-emitting material consisting of D, Cab, and AQ203, and polishing the surface to form a smooth electron-emitting surface. Osmium is deposited on the electron emitting surface to a thickness of 0.5 μm by electron beam evaporation to produce an osmium-coated impregnated cathode. Next, in a vacuum of I×1O-5 Torr or less,
The osmium coating is heat-treated at 00°C for 2 hours to make the osmium coating oxidation-resistant, thereby producing an oxidation-resistant osmium-coated impregnated cathode.
第４図は、通常のオスミウム被覆含浸形陰極の熱電子放
射特性２１、通常のオスミウム被覆含浸形陰極を大気中
で４５０℃、１０分間の酸化処理をした場合の熱電子放
射特性２２．及び本発明の真空中で１時間、１１００℃
で熱処理した耐酸化性のオスミウム被覆含浸形陰極を大
気中で５００℃、１０分間の酸化処理をした場合の熱電
子放射特性２３を示す。本実施例で明らかなように、本
発明によれば大気中での酸化処理を受けても熱電子放射
特性の劣化のない、耐酸化性のオスミウム被覆含浸形陰
極を容易に得ることができる。Figure 4 shows thermionic emission characteristics 21 of a normal osmium-coated impregnated cathode, and thermionic emission characteristics 22 of a normal osmium-coated impregnated cathode subjected to oxidation treatment at 450°C for 10 minutes in the air. and 1100°C for 1 hour in the vacuum of the present invention.
Thermionic emission characteristics 23 are shown when an oxidation-resistant osmium-coated impregnated cathode that has been heat-treated is subjected to oxidation treatment in the atmosphere at 500° C. for 10 minutes. As is clear from this example, according to the present invention, it is possible to easily obtain an oxidation-resistant osmium-coated impregnated cathode whose thermionic emission characteristics do not deteriorate even when subjected to oxidation treatment in the atmosphere.
［発明の効果］
以上述べたように、多孔質タングステン基体に電子放射
物質を含浸した含浸形陰極の電子放射面にオスミウムを
被覆したオスミウム被覆含浸形陰極において、電子放射
面にオウミスムを被覆後あらかじめ１０００〜１３５０
℃、より好ましくは１１００〜１２５０℃で熱処理を施
すことにより、熱電子放射特性の良い耐酸化性のオスミ
ウム被覆含浸形陰極を容易に製造できる。[Effects of the Invention] As described above, in an osmium-coated impregnated cathode in which the electron-emitting surface of an impregnated cathode in which a porous tungsten base is impregnated with an electron-emitting substance is coated with osmium, the electron-emitting surface is coated with osmium. 1000-1350
By performing heat treatment at a temperature of 1,100 to 1,250 degrees Celsius, an osmium-coated impregnated cathode with good thermionic emission characteristics and oxidation resistance can be easily produced.
第１図は、タングステン板にオスミウムを被覆した試料
において、大気酸化によるオスミウムの減少量を示す図
、第２図は、従来の封止工程の説明図、第３図は、オス
ミウム被覆タングステン板の耐酸化処理効果を示す図、
第４図は、本発明の実施例ミのオウミウム被覆合浸形陰
極の熱電子放射特性を示す図である。
１・・・陰極、２・・・電極群、３・・支持金具、４・
・・真空排気管、５・・・保持具、６・・・電子管、７
・・・ネック管、８・・・接続部、９・・・ガスバーナ
、１ｏ・・・真空排気口。
芋 ／ ２
あ ２ 図Figure 1 is a diagram showing the amount of osmium reduced due to atmospheric oxidation in a sample in which a tungsten plate is coated with osmium, Figure 2 is an explanatory diagram of the conventional sealing process, and Figure 3 is a diagram showing the amount of osmium reduced by atmospheric oxidation in a sample of a tungsten plate coated with osmium. Diagram showing the effect of oxidation resistance treatment,
FIG. 4 is a diagram showing thermionic emission characteristics of the aurium-coated co-immersion type cathode of Example 1 of the present invention. DESCRIPTION OF SYMBOLS 1... Cathode, 2... Electrode group, 3... Support metal fitting, 4...
... Vacuum exhaust pipe, 5... Holder, 6... Electron tube, 7
...Neck pipe, 8...Connection part, 9...Gas burner, 1o...Vacuum exhaust port. Potato / 2 A 2 Diagram
Claims (1)
２Ｏ＿３からなる電子放射物質を含浸した含浸形陰極の
電子放射面にオスミウムを被覆した後、非酸化性雰囲気
中で熱処理し所望の耐酸化性を得ることを特徴とするオ
スミウム被覆含浸形陰極の製造方法。1. Porous tungsten substrate with BaO, CaO, Al_
Production of an osmium-coated impregnated cathode characterized in that the electron emitting surface of the impregnated cathode impregnated with an electron emitting substance consisting of 2O_3 is coated with osmium, and then heat treated in a non-oxidizing atmosphere to obtain desired oxidation resistance. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2750388A JPS63211535A (en) | 1988-02-10 | 1988-02-10 | Manufacture of osmium-coated impregnated type cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2750388A JPS63211535A (en) | 1988-02-10 | 1988-02-10 | Manufacture of osmium-coated impregnated type cathode |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59201654A Division JPS60100333A (en) | 1984-09-28 | 1984-09-28 | Osmium coated and impregnated cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63211535A true JPS63211535A (en) | 1988-09-02 |
| JPH0345856B2 JPH0345856B2 (en) | 1991-07-12 |
Family
ID=12222945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2750388A Granted JPS63211535A (en) | 1988-02-10 | 1988-02-10 | Manufacture of osmium-coated impregnated type cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63211535A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105980588B (en) | 2013-12-12 | 2018-04-27 | 杰富意钢铁株式会社 | Steel plate and its manufacture method |
-
1988
- 1988-02-10 JP JP2750388A patent/JPS63211535A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345856B2 (en) | 1991-07-12 |
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