JPS63253673A - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- JPS63253673A JPS63253673A JP62088003A JP8800387A JPS63253673A JP S63253673 A JPS63253673 A JP S63253673A JP 62088003 A JP62088003 A JP 62088003A JP 8800387 A JP8800387 A JP 8800387A JP S63253673 A JPS63253673 A JP S63253673A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- pattern wiring
- light
- receiving surface
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000005357 flat glass Substances 0.000 claims abstract description 14
- 238000007789 sealing Methods 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はホトダイオードに関し、特にガラス窓を有し気
密封止された構造のホトダイオードに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photodiode, and more particularly to a photodiode having a hermetically sealed structure and having a glass window.
従来、この種のホトダイオードは、第２図に示すように
、シールガラス５２を貫通するカソードリード端子３１
ａとアノードリード端子３２ａとを備えたステム５０と
、このステム５０の内側のアノードリード端子３２ａの
平坦部にマウントソルダ５３によりアノード電極を接着
接続するホトダイオードチップ２０と、このホトダイオ
ードチップ２０の受光面２１側に形成されたカソード電
極とステム５０の内側のカソードリード端子３１ａとを
ボンディング接続する金属細線２４ａと、ガラス窓４１
を備えステム５０と共にホトダイオードチップ２０を気
密封止する金属キヤ・・ｌプ４０とを有する構造となっ
ていた。Conventionally, this type of photodiode has a cathode lead terminal 31 that passes through a sealing glass 52, as shown in FIG.
a photodiode chip 20 having an anode electrode adhesively connected to the flat part of the anode lead terminal 32a inside the stem 50 with a mount solder 53; and a light-receiving surface of the photodiode chip 20. A thin metal wire 24a bonding the cathode electrode formed on the 21 side and the cathode lead terminal 31a inside the stem 50, and a glass window 41.
It had a structure including a stem 50 and a metal cap 40 for hermetically sealing the photodiode chip 20.
上述した従来のホトダイオードは、ホトダイオードチッ
プ２０の受光面２１側のカソード電極とカソードリード
端子３１ａとを金属細線２４ａによりボンディング接続
する構造となっているので、ホトダイオードチップ２０
の受光面２１とガラス窓４１との間にすき間が必要であ
り、ガラス窓４１の外部表面からホトダイオードチップ
２゜の受光面２１までの距離（光学長）が大きくなるた
めに受光面２１へ有効に光を入射しようとするときの障
害になるという欠点があった。The conventional photodiode described above has a structure in which the cathode electrode on the light-receiving surface 21 side of the photodiode chip 20 and the cathode lead terminal 31a are bonded and connected by the thin metal wire 24a.
A gap is required between the light-receiving surface 21 of the photodiode chip 21 and the glass window 41, and the distance (optical length) from the outer surface of the glass window 41 to the light-receiving surface 21 of the photodiode chip 2° increases. This has the disadvantage that it becomes an obstacle when trying to inject light into the area.
特に光フアイバ通信分野で使われるホトダイオードは、
受光面の直径が数１０μ程度であるので、この光学長が
大きくなると極めて使いにくくなる。In particular, photodiodes used in the optical fiber communication field are
Since the diameter of the light-receiving surface is about several tens of microns, if this optical length becomes large, it becomes extremely difficult to use.
本発明の目的は、受光面までの光学長を短がくすること
ができて受光面への光を有効に入射することができ、か
つ使いやすいホトダイオードを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a photodiode that can shorten the optical length to a light receiving surface, allow light to be effectively incident on the light receiving surface, and is easy to use.
本発明のホトダイオードは、受光面側の面に形成された
メタライズ層の第１の電極と、前記受光面とは逆の面に
形成された第２の電極とを備えたホトダイオードチップ
と、同一面上に一端が前記第１の電極と面接触して接着
接続するメタライズ層の第１のパターン配線と一端が前
記第２の電極と接続するメタライズ層の第２のパターン
配線とが形成された平板ガラスと、第１及び第２のリー
ド端子を備え前記平板ガラスと共に前記ホトダイオード
チップを気密封止すると同時に前記第１及び第２のパタ
ーン配線と前記第１及び第２のリード端子とをそれぞれ
接続する容器とを有している。The photodiode of the present invention includes a photodiode chip having a first electrode of a metallized layer formed on a surface on a light-receiving surface side, and a second electrode formed on a surface opposite to the light-receiving surface; A flat plate on which are formed a first pattern wiring of a metallized layer whose one end is in surface contact with and adhesively connected to the first electrode, and a second pattern wiring of a metallized layer whose one end is connected to the second electrode. glass and first and second lead terminals, hermetically sealing the photodiode chip together with the flat glass and simultaneously connecting the first and second pattern wiring to the first and second lead terminals, respectively. It has a container.
次に本発明の実施例について図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ）〜（ｃ）はそれぞれ本発明の一実施例を示
す上方向及び下方向からの分解斜視図並びに断面図であ
る。FIGS. 1(a) to 1(c) are an exploded perspective view and a cross-sectional view from above and below, respectively, showing an embodiment of the present invention.
ホトダイオードチップ２０には、受光面２１ｆｔ１１の
面にメタライズ層の第１の電極のカソード電極２２と、
受光面２１とは逆の面に第２の電極のアノード電極２３
が形成されている。The photodiode chip 20 has a cathode electrode 22, which is a first electrode of a metallized layer, on the light receiving surface 21ft11.
An anode electrode 23 of the second electrode is placed on the opposite side to the light receiving surface 21.
is formed.
平板ガラス１０には、片方の面に、この面のほぼ中央に
カソード電極２２とほぼ同一形状のパターンとこれに続
いて周辺まで伸びるパターンを有しメタライズ層で形成
された第１のパターン配線のカソードパターン配線１１
と、周辺から中央方向に少し伸びたパターンを有しメタ
ライズ層で形成された第２のパターン配線のアノードパ
ターン配線１２とが設けられている。The flat glass 10 has a first pattern wiring formed of a metallized layer on one side, which has a pattern having almost the same shape as the cathode electrode 22 in the center of this surface, and a pattern that extends to the periphery. Cathode pattern wiring 11
and an anode pattern wiring 12, which is a second pattern wiring formed of a metallized layer and having a pattern slightly extending from the periphery toward the center.
この平板ガラス１０の中央のカソードパターン配線１１
に、ホトダイオードチップ２０のカソード電極２２が面
接触して導電性接着剤で接着接着し、また、アノードパ
ターン配線１２とアノード電極２３とが金属細線２４に
よりボンディング接続されている。Cathode pattern wiring 11 in the center of this flat glass 10
In addition, the cathode electrode 22 of the photodiode chip 20 is in surface contact with each other and bonded with a conductive adhesive, and the anode pattern wiring 12 and the anode electrode 23 are bonded and connected by a thin metal wire 24.
セラミック製の容器３０には、外部回路と接続するため
の第１及び第２のリード端子、即ちカソードリード端子
３１及びアノードリード端子３２がメタライズ層で形成
された配線層３３ａ、３３ｂとそれぞれ接続して設けら
れており、また平板ガラス１０がはめ込みできるように
段差部が設けられている。In the ceramic container 30, first and second lead terminals for connection to an external circuit, that is, a cathode lead terminal 31 and an anode lead terminal 32 are connected to wiring layers 33a and 33b formed of metallized layers, respectively. A stepped portion is provided so that the flat glass 10 can be fitted therein.
そして、ホト・ダイオードチップ２０を取付けた平板ガ
ラス１０を容器３０の段差部にはめ込み、カソードパタ
ーン配線１１の周辺側と配線層３３ａ、アノードパター
ン配線１２の周辺側と配線層３３ｂとが導電性接着剤で
接着接続され、同時に平板ガラス１０と容器とが接着剤
で気密接着されホトダイオードチップ２０を気密封止す
る構造となっている。Then, the flat glass 10 with the photodiode chip 20 attached thereto is fitted into the stepped portion of the container 30, and the peripheral side of the cathode pattern wiring 11 and the wiring layer 33a, and the peripheral side of the anode pattern wiring 12 and the wiring layer 33b are conductively bonded. At the same time, the flat glass 10 and the container are hermetically bonded to each other using an adhesive to hermetically seal the photodiode chip 20.
以上説明したように本発明は、ホトダイオードチップの
受光面側に形成されたメタライズ層の第１の電極と平板
ガラス面に形成されたメタライズ層の第１のパターン配
線とを面接触させて接着接続し気密封止する構造とする
ことにより、受光面までの光学長を短かくすることがで
きるので、使いやすくかつ受光面への光を有効に入射す
ることができる効果がある。As explained above, the present invention connects the first electrode of the metallized layer formed on the light-receiving surface side of the photodiode chip with the first pattern wiring of the metallized layer formed on the flat glass surface by bringing them into surface contact. By adopting an airtight sealing structure, the optical length up to the light receiving surface can be shortened, so that it is easy to use and the light can be effectively incident on the light receiving surface.
【図面の簡単な説明】
第１図（ａ）〜（ｃ）はそれぞれ本発明の一実施例を示
す上方向及び下方向からの分解斜視図並びに断面図、第
２図は従来のホトダイオードの一例を示す断面図である
。
１０・・・平板ガラス、１１・・・カソードパターン配
線、１２・・・アノードパターン配線、２０・・・ホト
ダイオードチップ、２１・・・受光面、２２・・・カソ
ード電極、２３・・・アノード電極、２４．２４ａ・・
・金属細線、３０・・・容器、３１．３１ａ・・・カソ
ードリード端子、３２．３２ａ・・・アノードリード端
子、３３ａ、３３ｂ・・・配線層、４０・・・金属キヤ
・ツブ、４１・・・ガラス窓、４２・・・低融点ガラス
、５０・・・ステム、５１・・・金属ベース、５２・・
・シールガラス、５３・・・マウントソルダ。[Brief Description of the Drawings] Figures 1(a) to (c) are exploded perspective views and cross-sectional views from above and below showing an embodiment of the present invention, respectively, and Figure 2 is an example of a conventional photodiode. FIG. DESCRIPTION OF SYMBOLS 10... Flat glass, 11... Cathode pattern wiring, 12... Anode pattern wiring, 20... Photodiode chip, 21... Light receiving surface, 22... Cathode electrode, 23... Anode electrode , 24.24a...
- Metal thin wire, 30... Container, 31.31a... Cathode lead terminal, 32.32a... Anode lead terminal, 33a, 33b... Wiring layer, 40... Metal can/tube, 41. ...Glass window, 42...Low melting point glass, 50...Stem, 51...Metal base, 52...
・Seal glass, 53...Mount solder.
Claims (1)
と、前記受光面とは逆の面に形成された第２の電極とを
備えたホトダイオードチップと、同一面上に一端が前記
第１の電極と面接触して接着接続するメタライズ層の第
１のパターン配線と一端が前記第２の電極と接続するメ
タライズ層の第２のパターン配線とが形成された平板ガ
ラスと、第１及び第２のリード端子を備え前記平板ガラ
スと共に前記ホトダイオードチップを気密封止すると同
時に前記第１及び第２のパターン配線と前記第１及び第
２のリード端子とをそれぞれ接続する容器とを有するこ
とを特徴とするホトダイオード。A photodiode chip includes a first electrode of a metallized layer formed on a surface facing the light-receiving surface and a second electrode formed on a surface opposite to the light-receiving surface; a flat glass on which are formed a first pattern wiring of a metallized layer that is in surface contact with and adhesively connected to the first electrode; and a second pattern wiring of the metallized layer that has one end connected to the second electrode; A container includes a second lead terminal and hermetically seals the photodiode chip together with the flat glass, and at the same time connects the first and second pattern wiring and the first and second lead terminals, respectively. Characteristic photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62088003A JPH065761B2 (en) | 1987-04-10 | 1987-04-10 | Photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62088003A JPH065761B2 (en) | 1987-04-10 | 1987-04-10 | Photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63253673A true JPS63253673A (en) | 1988-10-20 |
| JPH065761B2 JPH065761B2 (en) | 1994-01-19 |
Family
ID=13930611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62088003A Expired - Lifetime JPH065761B2 (en) | 1987-04-10 | 1987-04-10 | Photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065761B2 (en) |
-
1987
- 1987-04-10 JP JP62088003A patent/JPH065761B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065761B2 (en) | 1994-01-19 |
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