JPS63253636A - Wire bonding device - Google Patents
Wire bonding deviceInfo
- Publication number
- JPS63253636A JPS63253636A JP62088491A JP8849187A JPS63253636A JP S63253636 A JPS63253636 A JP S63253636A JP 62088491 A JP62088491 A JP 62088491A JP 8849187 A JP8849187 A JP 8849187A JP S63253636 A JPS63253636 A JP S63253636A
- Authority
- JP
- Japan
- Prior art keywords
- unit
- laser
- wire bonding
- package
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013307 optical fiber Substances 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000008188 pellet Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000000919 ceramic Substances 0.000 abstract description 8
- 239000012141 concentrate Substances 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体ペレットと外囲器（パッケージ）との
電気的接合を行うワイヤボンディング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a wire bonding device for electrically bonding a semiconductor pellet and an envelope (package).
（従来の技術）
ワイヤボンディング装置は、ダイマウントの終了した半
導体ペレット上の端子電極部（ポンディングパッド）と
外部接合のためのパッケージリードとの間を、金やアル
ミニウム等の極細線で配線接続するためのものである。(Prior technology) Wire bonding equipment connects the terminal electrode part (bonding pad) on the semiconductor pellet after die mounting and the package lead for external bonding using ultrafine wires such as gold or aluminum. It is for the purpose of
従来、一般に使用されているＴＣ法（熱圧着法）及びＵ
Ｔ法（熱圧着と超音波を併用した方法）におけるワイヤ
ボンディング装置は、第３図に示すように、半導体パレ
ット１及びパッケージリード２をその上面に接着したセ
ラミックパッケージ又は金属フレーム３を、加熱ヒータ
ブロック４の上面に載置してこれを加熱し、この上方に
配設したキャピラリー５を介して、この内部を挿通させ
た金やアルミニウムの極細線６の一端を半導体ベレット
１の端子電極部（ポンディングパッド）ｌａに、他端を
パッケージリード２に夫々接続するものであった。Conventionally, the commonly used TC method (thermocompression bonding method) and U
As shown in FIG. 3, a wire bonding device using the T method (a method that uses both thermocompression bonding and ultrasonic waves) connects a ceramic package or metal frame 3 with a semiconductor pallet 1 and package leads 2 bonded to the top surface of the ceramic package or metal frame 3 using a heating heater. It is placed on the upper surface of the block 4 and heated, and one end of the gold or aluminum ultrafine wire 6 inserted through the capillary 5 is inserted into the terminal electrode portion of the semiconductor pellet 1 ( The other end was connected to the bonding pad ) la and the other end to the package lead 2, respectively.
（発明が解決しようとする問題点）
しかしながら、上記従来例においては、端子電極部とパ
ッケージリードとを接合する前に、セラミックパッケー
ジ又は金属フレーム全体を加熱する必要があるので、こ
れに関連する材料や部材が加熱によって劣化や変形を起
こしてしまうため適応範囲がかなり限定されるばかりで
なく、熱伝導度の大きな材料や部品、体積の大きな材料
や部品等を加熱するには、長時間の加熱が必要となり、
作業性が著しく悪かうた。(Problems to be Solved by the Invention) However, in the conventional example described above, it is necessary to heat the entire ceramic package or metal frame before joining the terminal electrode part and the package lead, so the materials related to this need to be heated. Not only is the range of application considerably limited as heating can cause deterioration and deformation of materials and components, but it also requires long heating times to heat materials and parts with high thermal conductivity, materials and parts with large volumes, etc. is required,
Workability is extremely poor.
さらに、−品種一個のヒートブロックを必要とするので
、装置としての汎用性に欠けるといった問題点があった
。Furthermore, since a heat block of one type is required, there is a problem that the device lacks versatility.
本発明は上記に鑑み、端子電極部及びパッケージリード
等を局部的に加熱するだけでワイヤボンディングを行う
ことができ、しかも極めて容易に取扱うことができるも
のを提供することを目的とする。In view of the above, an object of the present invention is to provide a wire bonding device that can perform wire bonding simply by locally heating terminal electrode portions, package leads, etc., and can be handled extremely easily.
（問題点を解決するための手段）
本発明は上記目的を達成するため、レーザユニットを備
え、このレーザユニットで、例えば、半導体ベレット上
の端子電極部やパッケージリード等のボンディングの接
合部を局部的に加熱するようにしたものである。(Means for Solving the Problems) In order to achieve the above object, the present invention includes a laser unit, and uses the laser unit to locally cut bonding joints of terminal electrodes on semiconductor pellets, package leads, etc. It is designed to be heated.
（作 用）
而して、ワイヤボンディングする際に加熱を必要とする
任意の部分のみを、レーザユニットを介して局部的に加
熱することにより、セラミックパッケージ又は金属フレ
ーム全体を加熱する必要をなくすとともに、ワイヤボン
ディングを可能としたものである。(Function) By locally heating only the arbitrary portion that requires heating during wire bonding via the laser unit, it is not necessary to heat the entire ceramic package or metal frame. , which made wire bonding possible.
（実施例）
第１図は本発明の一実施例を示すもので、セラミックパ
ッケージ又は金属フレーム３の上面には接着剤を介して
半導体パレット１及びパッケージリード２が所定位置に
配置されて接着されている。(Embodiment) FIG. 1 shows an embodiment of the present invention, in which a semiconductor pallet 1 and a package lead 2 are placed at predetermined positions and bonded to the top surface of a ceramic package or metal frame 3 via an adhesive. ing.
このラミックパッケージ又は金属フレーム３の上方には
、キャピラリー５が配設され、このキャピラリー５の内
部には、半導体ベレット１の端子電極部（ポンディング
パッド）ｌａとパッケージリード２とを接続するための
、金やアルミニウム製の極細線６が挿通され、このキャ
ピラリー５の下部に加重をかけることにより、極細線６
と端子電極部１ａ及びパッケージリード２とを夫々接合
するよう構成されている。A capillary 5 is disposed above the lamic package or metal frame 3, and inside the capillary 5 there is a capillary 5 for connecting the terminal electrode portion (ponding pad) la of the semiconductor pellet 1 and the package lead 2. , an ultra-fine wire 6 made of gold or aluminum is inserted, and by applying weight to the bottom of this capillary 5, the ultra-fine wire 6
The terminal electrode portion 1a and the package lead 2 are connected to each other.
本実施例では、更に以下のような構成が備えられている
。This embodiment further includes the following configuration.
即ち、７はレーザユニットで、このレーザユニット７は
上記極細線６と端子電極部１ａ及びパッケージリード２
との接合部に近接して配設された加工ユニット（レーザ
エネルギー集束ユニット）８と、レーザ発信ユニット９
と、電源冷却ユニット１０及び上記加工ユニット８とレ
ーザ発信ユニット９とを接続する光ファイバ１１で構成
されている。That is, 7 is a laser unit, and this laser unit 7 includes the ultrafine wire 6, the terminal electrode portion 1a, and the package lead 2.
A processing unit (laser energy focusing unit) 8 and a laser transmitting unit 9 disposed close to the joint with the
, a power supply cooling unit 10 , and an optical fiber 11 connecting the processing unit 8 and the laser transmitting unit 9 .
このレーザユニット７は、極細線６の一端と端子電極部
１ａ及び極細線６の他端とパッケージリード２とのボン
ディングの際に、この接合部に局部的に加工ユニット８
からのレーザ光を当て、これによって、この接合部のみ
を加熱するためのものである。When bonding one end of the ultra-fine wire 6 to the terminal electrode portion 1a and the other end of the ultra-fine wire 6 to the package lead 2, the laser unit 7 locally processes the bonded portion using a processing unit 8.
This is to heat only this joint by applying laser light from the
このように構成することにより、レーザの指向性（直進
する性質）が良く、パワーの密度が大きく極めて小さい
部分にエネルギーを集中できるというレーザユニットの
特徴を応用することができ、これによって、端子電極部
１ａあるいはパッケージリード２等のボンディングを行
う接合部だけに局部的にレーザ光を当てて加熱すれば良
くして、セラミックパッケージあるいは金属フレーム３
の全体を加熱する必要をなくし、加熱による材料や。With this configuration, it is possible to apply the characteristics of the laser unit that the laser has good directivity (property to travel in a straight line), has a large power density, and can concentrate energy in an extremely small area. The ceramic package or metal frame 3 can be heated by locally applying a laser beam to only the bonding portion 1a or the package lead 2, etc., to be bonded.
Eliminates the need to heat the entire material or material by heating.
部品の劣化を防止するようにすることができる。It is possible to prevent deterioration of parts.
しかも、局部的にレーザ光を当てるだけなので、加熱時
間を短縮して作業性を向上させることができる。Moreover, since the laser beam is only applied locally, the heating time can be shortened and workability can be improved.
なお、上記実施例では、キャピラリー５を使用したもの
を示しているが、ウェッジを使用したものでも良い。In the above embodiment, the capillary 5 is used, but a wedge may be used.
第２図は本発明の他の実施例を示すもので、レーザ発信
ユニット９に分岐ユニット１２を接続させ、この分岐ユ
ニット１２に複数の光ファイバ１１を接続し、この各光
ファイバ１１の先端に夫々加工ユニット８を連結してレ
ーザユニット７を構成したものである。FIG. 2 shows another embodiment of the present invention, in which a branching unit 12 is connected to the laser transmitting unit 9, a plurality of optical fibers 11 are connected to this branching unit 12, and the tip of each optical fiber 11 is connected to the branching unit 12. A laser unit 7 is constructed by connecting processing units 8 to each other.
このように構成することにより、複数個の加工ユニット
８で同時に加熱を行って、これが−個の場合に比べて、
更に作業性を向上させるようにすることができる。With this configuration, compared to the case where multiple processing units 8 perform heating at the same time and there are -
Furthermore, workability can be improved.
本発明は上記ような構成であるので、レーザ光により局
部的に加熱するだけでワイヤボンディングを行うことが
でき、従ってセラミックパッケージや金属フレームの全
体を加熱する必要はなくなるので、加熱による部品及び
部材等の劣化を防止するとともに、作業性を向上させる
ことができる。Since the present invention has the above-mentioned configuration, wire bonding can be performed only by heating locally with a laser beam, and there is no need to heat the entire ceramic package or metal frame. It is possible to prevent deterioration such as, etc., and improve workability.
しかも、取扱いか容易であるばかりでなく、汎用性に富
むといった効果がある。Moreover, it is not only easy to handle, but also has the advantage of being highly versatile.
第１図は本発明の一実施例を示す概略斜視図、第２図は
他の実施例のレーザユニットを示す構成図、第３図は従
来例を示す概略斜視図である。
１・・・半導体ペレット、１ａ・・・端子電極部、２・
・・パッケージリード、５・・・キャピラリー、６・・
・極細線、７・・・レーザユニット、８・・・加工ユニ
ット、９・・・レーザ発信ユニット、１０・・・電源冷
却ユニット、１１・・・光ファイバ、１２・・・分岐ユ
ニット。FIG. 1 is a schematic perspective view showing one embodiment of the present invention, FIG. 2 is a configuration diagram showing a laser unit of another embodiment, and FIG. 3 is a schematic perspective view showing a conventional example. DESCRIPTION OF SYMBOLS 1... Semiconductor pellet, 1a... Terminal electrode part, 2...
...Package lead, 5...Capillary, 6...
- Ultrafine wire, 7... Laser unit, 8... Processing unit, 9... Laser transmission unit, 10... Power supply cooling unit, 11... Optical fiber, 12... Branching unit.
Claims (1)
の部分を局部的に加熱するようにしたことを特徴とする
ワイヤボンディング装置。 ２、レーザユニットで、半導体ペレット上の端子電極部
やパッケージリード等のボンディングを行う接合部だけ
を局部的に加熱するようにしたことを特徴とする特許請
求の範囲第１項記載のワイヤボンディング装置。 ３、加工ユニットとレーザ発信ユニットとを光ファイバ
で接続するとともに、電源冷却ユニットをレーザ発信ユ
ニット接続してレーザユニットを構成したことを特徴と
する特許請求の範囲第１項又は第２項記載のワイヤボン
ディング装置。 ４、レーザ発信ユニットに分岐ユニットを接続し、この
分岐ユニットに夫々先端に加工ユニット連結した複数の
光ファイバを接続したことを特徴とする特許請求の範囲
第３項記載のワイヤボンディング装置。[Scope of Claims] 1. A wire bonding apparatus comprising a laser unit, which locally heats an arbitrary part. 2. The wire bonding apparatus according to claim 1, characterized in that the laser unit locally heats only the bonding portion of the semiconductor pellet, such as a terminal electrode portion or a package lead, to which bonding is performed. . 3. The laser unit according to claim 1 or 2 is characterized in that the processing unit and the laser transmission unit are connected by an optical fiber, and the power supply cooling unit is connected to the laser transmission unit to constitute the laser unit. Wire bonding equipment. 4. The wire bonding apparatus according to claim 3, wherein a branching unit is connected to the laser transmission unit, and a plurality of optical fibers each having a processing unit connected to the tip thereof are connected to the branching unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62088491A JPS63253636A (en) | 1987-04-10 | 1987-04-10 | Wire bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62088491A JPS63253636A (en) | 1987-04-10 | 1987-04-10 | Wire bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63253636A true JPS63253636A (en) | 1988-10-20 |
Family
ID=13944280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62088491A Pending JPS63253636A (en) | 1987-04-10 | 1987-04-10 | Wire bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63253636A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970053199A (en) * | 1995-12-30 | 1997-07-29 | 황인길 | Thermal heating method of package during wire bonding of semiconductor manufacturing process |
-
1987
- 1987-04-10 JP JP62088491A patent/JPS63253636A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970053199A (en) * | 1995-12-30 | 1997-07-29 | 황인길 | Thermal heating method of package during wire bonding of semiconductor manufacturing process |
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