JPS63253551A - Conducting film in optical disk mastering process - Google Patents
Conducting film in optical disk mastering processInfo
- Publication number
- JPS63253551A JPS63253551A JP8735687A JP8735687A JPS63253551A JP S63253551 A JPS63253551 A JP S63253551A JP 8735687 A JP8735687 A JP 8735687A JP 8735687 A JP8735687 A JP 8735687A JP S63253551 A JPS63253551 A JP S63253551A
- Authority
- JP
- Japan
- Prior art keywords
- master
- layer
- mother
- resist
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 9
- 230000003287 optical effect Effects 0.000 title claims description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 15
- 238000011282 treatment Methods 0.000 abstract description 10
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 abstract description 9
- 239000004020 conductor Substances 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 abstract description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 3
- 229910001120 nichrome Inorganic materials 0.000 abstract 3
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 16
- 238000005323 electroforming Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RNFYGEKNFJULJY-UHFFFAOYSA-L chromium(ii) fluoride Chemical compound [F-].[F-].[Cr+2] RNFYGEKNFJULJY-UHFFFAOYSA-L 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- OANFWJQPUHQWDL-UHFFFAOYSA-N copper iron manganese nickel Chemical compound [Mn].[Fe].[Ni].[Cu] OANFWJQPUHQWDL-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000005956 quaternization reaction Methods 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 230000035936 sexual power Effects 0.000 description 1
- FTHXNDRIJXQDTA-UHFFFAOYSA-N silver tetramer Chemical compound [Ag].[Ag].[Ag].[Ag] FTHXNDRIJXQDTA-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Landscapes
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光デイスクマスタリングプロセスの導体化処理
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to conductorization processing in an optical disk mastering process.
本発明は光デイスクマスタリングプロセスの導体化処理
において、不導体であるレジストおよびガラス原盤の上
面に銀后とニッケルクロム合金層の2層を成膜すること
により、この導体化膜上にニッケル電鋳して形成される
マスターから、マザーを転写・複製する工程において、
離型剤をマスター表面に処理する作業の合理化およびマ
スターとマザーのII!!性の向上を図ったものである
。In the conductorization process of the optical disc mastering process, the present invention forms two layers, a silver layer and a nickel-chromium alloy layer, on the top surface of a nonconductor resist and a glass master, and then nickel electroforming is applied to the conductorization film. In the process of transferring and replicating the mother from the master formed by
Streamlining the work of treating the surface of the master with a mold release agent and master and mother II! ! This is aimed at improving sexual performance.
従来の導体化膜の組成は、銀もしくはニッケルである。 The composition of conventional conductive films is silver or nickel.
(第2図)導体化膜5に銀を使用した場合マスター表面
から錫をエツチング・除去し、ニッケル面となったマス
ター表面に、また導体化膜5にニッケルを使用した場合
、二フケル4体化膜で構成されたマスター表面に、mク
ロム酸カリウム溶液によるマスター表面被膜処理を施こ
した後、マスターの転写・複製を行ってマザーを製造し
ていた。(Figure 2) When silver is used for the conductive film 5, tin is etched and removed from the master surface, and the master surface becomes a nickel surface, and when nickel is used for the conductive film 5, 4 NiFkels are etched. After applying a master surface coating treatment using a potassium chromate solution to a master surface composed of a chemical film, a mother was manufactured by transferring and duplicating the master.
しかし前述の従来技術では、マスターからマザーを転写
・複製する際、重クロム酸カリウム溶液を用いてのマス
ター表面被膜処理作業が必要であり、そのための設備・
薬品類・溶液等の整備、管理、維持が必要である。また
、このinクロム酸カリウム液による離型処理では、処
理ごとにm!i性が異なる場合があり、さらに処理病中
の異物、塵等がマスター表面に伸行し、それを転写・複
製することにより作られるマザーの電気信号特性的品質
・外観品質の低下といった問題点を有する。However, with the above-mentioned conventional technology, when transferring and duplicating the mother from the master, it is necessary to treat the surface of the master with a potassium dichromate solution, and the equipment and
It is necessary to prepare, manage, and maintain chemicals, solutions, etc. In addition, in the mold release treatment using this in-potassium chromate solution, m! In addition, foreign matter, dust, etc. during processing may extend to the master surface, causing problems such as deterioration of the electrical signal characteristic quality and appearance quality of the mother produced by transferring and duplicating it. have
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、マスター表面被膜処理工程の合
理化が可能な4体化膜を提供することにある。SUMMARY OF THE INVENTION The present invention aims to solve these problems, and its purpose is to provide a four-piece membrane that can streamline the master surface coating process.
本発明は、レジスト1およびガラス原盤上の構成が銀と
ニッケル・クロム合金の2層からなることを特徴とする
。The present invention is characterized in that the structure on the resist 1 and the glass master disk consists of two layers of silver and a nickel-chromium alloy.
詳しくは4体化膜は不導体であるレジストおよびガラス
原盤の上面に第1届として銀導体化膜を成膜し、さらに
その上面に第2層としてニッケルクロム合金4体化膜を
成膜することによる2層構造とするものである。In detail, the 4-layer film is made by forming a silver conductor film as the first layer on the top surface of the resist and glass master disk, which are non-conductors, and then forming a nickel-chromium alloy 4-layer film on the top surface as the second layer. It has a two-layer structure.
本発明の導体化膜は第1図で示される構成をしている。 The conductive film of the present invention has the configuration shown in FIG.
まず、光ディスクマスタリングプロセスにおける現像・
ボストベイク工程までを終了したレジストパターン2が
形成されたガラス原盤1において、情報信号パターンを
形成されたレジスト2、および情報信号部分のレジスト
の露光Φ除去されたガラス原盤1面の上面にスパッタリ
ング法を用いて、組成が銀からなる導体化膜3を第1層
として成膜する。次いで連続的に第2fflとしてニッ
ケルクロム合金4体化1124を銀導体化膜3上に成膜
する。First, the development and
In the glass master disk 1 on which the resist pattern 2 has been formed, which has been completed up to the boss baking process, a sputtering method is applied to the upper surface of the glass master disk 1, from which the exposure Φ of the resist 2 on which the information signal pattern has been formed and the resist in the information signal portion has been removed. Using this method, a conductive film 3 having a composition of silver is formed as a first layer. Next, a nickel-chromium alloy quartet 1124 is continuously formed on the silver conductive film 3 as a second ffl.
ここで第1層である銀導体化膜3を成膜しない場合ガラ
ス原盤1からのマスター別離時においてマスターの電気
信号特性的品質の低下および外観品質の低下という問題
が発生ずる。これを防止するため第1T!1として11
10体化l123を成膜する。If the first layer, ie, the silver conductive film 3, is not formed, problems arise in that when the master is separated from the glass master disk 1, the quality of the electrical signal characteristics of the master deteriorates and the quality of the appearance deteriorates. To prevent this, the first T! 1 as 11
10-body l123 is formed into a film.
スパッタ条件は、スパッタ用電源DC,初期真空度5X
10−@Torr1スパッタ7 kゴ/圧力 3X10
−’ Torr1スパッタパワー 3OOWとし、スパ
ッタレートは、銀 500λ/m1nsニッケルクロム
合金150人/minである。スパツタ膜の膜厚は、1
1500λ〜1000人、ニッケルクロム合金 400
人〜700人である。ニッケルクロム合金の組成は、ニ
ッケル/クロム=65/35〜9515であるが、ニッ
ケルクロム合金導体化B4上にニッケル電鋳層を形成す
る場合、クロムの比率を高めるとニッケルクロム合金導
体化膜4とニッケル電鋳層とのけ指刀が低下するためク
ロムの比率は低い方が望ましい。The sputtering conditions are: sputtering power supply DC, initial vacuum degree 5X.
10-@Torr1 sputter 7 k go/pressure 3X10
-' Torr1 sputtering power is 3OOOW, and the sputtering rate is silver 500λ/mlns nickel chromium alloy 150 people/min. The thickness of the sputtered film is 1
1500λ~1000 people, nickel chromium alloy 400
~700 people. The composition of the nickel-chromium alloy is nickel/chromium = 65/35 to 9515, but when forming a nickel electroformed layer on the nickel-chromium alloy conductive film B4, increasing the chromium ratio results in a nickel-chromium alloy conductive film 4. It is desirable that the ratio of chromium be lower, since the nickel electroformed layer and the bonding strength will be lowered.
次に、ニッケルクロム合金4体化膜4上にニッケル電鋳
層を形成する。この時、ニッケルクロム合金4体化膜4
は表門が大気中にて酸化し、不働態皮膜を形成している
ため、電鋳開始前にアノード・カンードを逆転させ逆電
流をかけ、ニッケルクロム合金4体化膜4を軽(エツチ
ングした後、電鋳するか、もしくは電鋳開始初期に交流
電流を使用しエツチングしながら、電防層形成を行うこ
とにより、二フケルクロム合金導体化1124とニッケ
ル電鋳層の付行力を向上させることが必要である。Next, a nickel electroformed layer is formed on the nickel chromium alloy tetramer film 4. At this time, the nickel chromium alloy 4-body film 4
Since the front gate is oxidized in the atmosphere and forms a passive film, the anode and cand are reversed and a reverse current is applied before electroforming starts, and the nickel-chromium alloy tetramer film 4 is lightly etched (after etching). It is possible to improve the adhesion of the difluorochromium alloy conductor 1124 and the nickel electroformed layer by electroforming or by forming an electroprotective layer while etching using an alternating current at the beginning of electroforming. is necessary.
次にニッケル電鋳終了後、マスターをガラス原盤からI
II [L 、内外径加工、裏面研磨、レジスト♀り離
洗浄、銀エツチングを行う。その結果マスター表面は、
ニッケルクロム合金4体化膜4面になる。このマスター
を無処理で直接、電鋳装置にセットし、ニッケル電鋳を
行い、厚み300μm程電鋳層を形成する。すると第3
図に示すように、マスター6とそのパターンを転写・複
製したマザー7が付むし一体となった状態で電鋳が終了
する。このマスター6とマザー7が一体となった状態の
ものを外周部から薄い金属板などを利用して、マスター
6とマザー7の界面に軽く差し込むと簡単にマスター6
からマザー7が離型する。Next, after nickel electroforming is completed, the master is removed from the glass master disk.
II [L, Perform inner and outer diameter processing, back surface polishing, resist removal cleaning, and silver etching. The resulting master surface is
There are four nickel-chromium alloy four-layer films. This master is directly set in an electroforming device without treatment, and nickel electroforming is performed to form an electroformed layer with a thickness of about 300 μm. Then the third
As shown in the figure, electroforming is completed in a state where the master 6 and the mother 7 to which the pattern has been transferred and copied are essentially integrated. Master 6 and mother 7 can be easily inserted into the interface between master 6 and mother 7 using a thin metal plate from the outer periphery.
Mother 7 is released from the mold.
以上述べたように本発明のm1FJ−1llX体化IK
、1ff2ff・ニッケルクロム合金導体化膜とした2
a構造の4体化膜によれば、重クロム酸カリウム溶液に
てマスターの表面被膜処理をする作業を削除できること
により、ア)マスター表面被膜処理用の設備・備品・薬
品類が不用となり経費を削減できる。また、正クロム酸
カリウム溶液の管理・維持が不要になる。ずなわち工程
の合理化が可能である。イ)重クロム酸カリウム溶液中
の異物、塵などによって発生するマザーの電気信号特性
的品質の劣化および外観品質の劣化を防止するという2
点の効果を汀する。As mentioned above, the m1FJ-1llX body IK of the present invention
, 1ff2ff nickel chromium alloy conductive film 2
According to the a-structure tetramer membrane, it is possible to eliminate the work of treating the surface of the master with a potassium dichromate solution, thereby a) eliminating the need for equipment, supplies, and chemicals for the treatment of the master surface, thereby reducing costs; It can be reduced. Moreover, the management and maintenance of the potassium orthochromate solution becomes unnecessary. In other words, it is possible to rationalize the process. 2) Preventing the deterioration of the electrical signal characteristic quality of the motherboard and the deterioration of the appearance quality caused by foreign matter, dust, etc. in the potassium dichromate solution.
Determine the effect of the point.
第1図は、本発明の第1府・銀4体化膜、第2層・ニッ
ケルクロム合金導体化膜とした2層構造の4体化膜でレ
ジストパターンを4体化処理した場合の断面図
第2図は、従来のニッケル4体化膜もしくは銀4体化膜
でレジストパター7を4体化処理した場合の断面図
第3図は、マスターにニッケル電鋳を行い、マザーを転
写・複製した場合の断面図
1 ガラス原盤
2 レジスト
3 銀4体化膜
4 ニッケルクロム合金4体化膜
5 側導体化膜またはニッケル導体化膜6 マスター
7 マザー
以 上Figure 1 shows a cross-section of a resist pattern subjected to tetramerization treatment using a two-layered tetramerization film of the present invention: the first layer is a silver tetramerization film, and the second layer is a nickel-chromium alloy conductive film. Figure 2 is a cross-sectional view of the resist pattern 7 that has been subjected to quaternization treatment using a conventional nickel tetramer film or silver tetramer film. Cross-sectional view when duplicating 1 Glass master 2 Resist 3 4-metal silver film 4 4-nickel chromium alloy film 5 Side conductor film or nickel conductor film 6 Master 7 Mother and above
Claims (1)
・カロム合金の2層からなることを特徴とする光ディス
クマスタリングプロセスにおける導体化膜A conductive film in an optical disc mastering process characterized by a structure on the register and on the glass master disc consisting of two layers of silver and nickel carom alloy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8735687A JPS63253551A (en) | 1987-04-09 | 1987-04-09 | Conducting film in optical disk mastering process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8735687A JPS63253551A (en) | 1987-04-09 | 1987-04-09 | Conducting film in optical disk mastering process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63253551A true JPS63253551A (en) | 1988-10-20 |
Family
ID=13912602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8735687A Pending JPS63253551A (en) | 1987-04-09 | 1987-04-09 | Conducting film in optical disk mastering process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63253551A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1154421A2 (en) * | 2000-05-12 | 2001-11-14 | Pioneer Corporation | Production method for optical disc |
WO2011114968A1 (en) * | 2010-03-19 | 2011-09-22 | 学校法人早稲田大学 | Mold manufacture method and mold formed by said method |
-
1987
- 1987-04-09 JP JP8735687A patent/JPS63253551A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1154421A2 (en) * | 2000-05-12 | 2001-11-14 | Pioneer Corporation | Production method for optical disc |
EP1154421A3 (en) * | 2000-05-12 | 2006-06-07 | Pioneer Corporation | Production method for optical disc |
WO2011114968A1 (en) * | 2010-03-19 | 2011-09-22 | 学校法人早稲田大学 | Mold manufacture method and mold formed by said method |
JP2011194720A (en) * | 2010-03-19 | 2011-10-06 | Waseda Univ | Mold manufacturing method and mold produced by the method |
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