JPS63252943A - Glass substrate attached by transparent electroconductive film - Google Patents
Glass substrate attached by transparent electroconductive filmInfo
- Publication number
- JPS63252943A JPS63252943A JP8800687A JP8800687A JPS63252943A JP S63252943 A JPS63252943 A JP S63252943A JP 8800687 A JP8800687 A JP 8800687A JP 8800687 A JP8800687 A JP 8800687A JP S63252943 A JPS63252943 A JP S63252943A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- transparent electroconductive
- electroconductive film
- thermal expansion
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 239000012789 electroconductive film Substances 0.000 title abstract 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 abstract description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract description 2
- 239000005297 pyrex Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、表面に酸化スズを主体とした透明導電膜を付
着したガラス基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a glass substrate having a transparent conductive film mainly composed of tin oxide attached to the surface thereof.
従来、ガラス基板上に酸化スズを主成分とする透明導電
膜を形成する方法としては、スプレー法、ＣＶＤ法、真
空蒸着法、スパッタ法が知られている。しかしながら、
スプレー法は、均一な膜を得るのが容易ではない、また
、真空蒸着法、スパッタ法はバッチ処理となるため量産
性が劣り、コスト高になる欠点がある。従って、現状で
は、酸化スズを主成分とする透明導電膜をガラス基板上
に形成する方法としては、ＣＶＤ法が最も優れている。Conventionally, spray methods, CVD methods, vacuum evaporation methods, and sputtering methods are known as methods for forming a transparent conductive film containing tin oxide as a main component on a glass substrate. however,
The spray method has the disadvantage that it is not easy to obtain a uniform film, and the vacuum evaporation method and the sputtering method involve batch processing, resulting in poor mass productivity and high cost. Therefore, at present, the CVD method is the most excellent method for forming a transparent conductive film containing tin oxide as a main component on a glass substrate.
しかるに、従来このＣＶＤ法で透明導電膜を形成するガ
ラス基板に関しての検討は行なわれたことがなく、どの
様なガラス基板でも形成された膜には全く差がないもの
と考えられていた。However, no studies have been conducted on glass substrates on which transparent conductive films are formed using this CVD method, and it was thought that there is no difference in the films formed on any glass substrate.
しかしながら、上述した従来のＣＶＤ法でガラス基板上
に形成した透明導電膜を、例えばＡＣ型プラズマディス
プレイのカバープレートの電極として使用する場合、電
極を被覆する絶縁層の焼成温度が約６００℃であること
から、ＣＶＤ法でのガラス基板温度を通常の４５０℃〜
５５０℃ではなく、６００℃以上にしなくてはならない
、このため付着する透明導電膜とガラス基板との熱膨張
係数が近似していなければならず、もし両者の熱膨張係
数が相当具なっていると、付着した透明導電膜は、時間
とともに亀裂が生じる場合があるという欠点がある。However, when a transparent conductive film formed on a glass substrate by the conventional CVD method described above is used, for example, as an electrode for a cover plate of an AC type plasma display, the firing temperature of the insulating layer covering the electrode is approximately 600°C. Therefore, the temperature of the glass substrate in the CVD method should be lower than the usual 450°C.
The temperature must be 600°C or higher, not 550°C. Therefore, the thermal expansion coefficients of the attached transparent conductive film and the glass substrate must be similar, and if the thermal expansion coefficients of both are comparable, However, the attached transparent conductive film has the disadvantage that cracks may occur over time.
本発明は、酸化スズを主体とする透明導電膜を付着する
ガラス基板として熱膨張係数が８５×１０−’／’Ｃ以
下のものを用いることを特徴とする。The present invention is characterized in that a glass substrate having a thermal expansion coefficient of 85 x 10-'/'C or less is used as a glass substrate to which a transparent conductive film mainly composed of tin oxide is attached.
次に本発明について具体的に説明する。 Next, the present invention will be specifically explained.
第１図は種々の膨張係数のガラス基板１００枚に膜厚的
８，０００人の酸化スズを主体とした透明導電膜を形成
した時、膜形成後の時間の経過とともに亀裂の発生した
ガラス基板の枚数である。なお、膜形成時の基板温度は
６２０℃であった。図中、曲線ａのガラス基板の膨張係
数は９１ Ｘ １０−’／’Ｃ，曲線すのガラス基板の
膨張係数は８５ Ｘ １０−７／℃，曲線Ｃはパイレッ
クスガラスであり、膨張係数は３６Ｘ１０−’／℃であ
る０曲線ａ、ｂの様に時間経過とともに亀裂の入る透明
導電膜もストライプ状の電極にエツチングしてしまえば
応力が緩和され亀裂は入らなくなる。しかしながら、ベ
タ状の膜をストライプ状の電極にエツチングする場合、
通常２〜３日必要であるので、第１図より、亀裂の入る
前にエツチングするためには、ガラス基板の膨張係数は
８５×１０−７／℃以下でなくてはならないことが明ら
かとなった。Figure 1 shows the glass substrates that cracked over time after the film was formed when a transparent conductive film mainly made of tin oxide was formed on 100 glass substrates with various expansion coefficients. is the number of sheets. Note that the substrate temperature during film formation was 620°C. In the figure, the expansion coefficient of the glass substrate of curve a is 91 x 10-'/'C, the expansion coefficient of the glass substrate of curve A is 85 x 10-7/'C, and the expansion coefficient of curve C is pyrex glass of 36 x 10 -'/°C, 0 curves a and b, the transparent conductive film which cracks with the passage of time can be etched into striped electrodes to relieve stress and prevent cracks from forming. However, when etching a solid film into striped electrodes,
Since it usually takes 2 to 3 days, it is clear from Figure 1 that the expansion coefficient of the glass substrate must be 85 x 10-7/°C or less in order to etch it before cracks form. Ta.
以上説明したように本発明は、透明導電膜を形成するガ
ラス基板の膨張係数を最適化することにより、エツチン
グまでに亀裂の生じない透明導電膜を得ることのできる
効果がある。As explained above, the present invention has the advantage that by optimizing the expansion coefficient of the glass substrate on which the transparent conductive film is formed, it is possible to obtain a transparent conductive film that does not generate cracks before etching.
第１図は、本発明を得るための実験の結果を月すグラフ
である。FIG. 1 is a graph showing the results of experiments to obtain the present invention.
Claims (1)
ス基板において、前記ガラス基板として熱膨張係数が８
５×１０＾−＾７／℃以下のものを用いることを特徴と
する透明導電膜を付着したガラス基板。In a glass substrate having a transparent conductive film mainly made of tin oxide attached to the surface, the glass substrate has a thermal expansion coefficient of 8.
A glass substrate having a transparent conductive film attached thereto, characterized in that a transparent conductive film having a temperature of 5×10^-^7/°C or less is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8800687A JPS63252943A (en) | 1987-04-10 | 1987-04-10 | Glass substrate attached by transparent electroconductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8800687A JPS63252943A (en) | 1987-04-10 | 1987-04-10 | Glass substrate attached by transparent electroconductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63252943A true JPS63252943A (en) | 1988-10-20 |
Family
ID=13930717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8800687A Pending JPS63252943A (en) | 1987-04-10 | 1987-04-10 | Glass substrate attached by transparent electroconductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63252943A (en) |
-
1987
- 1987-04-10 JP JP8800687A patent/JPS63252943A/en active Pending
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