JPS63252228A - Semiconductor pressure detector - Google Patents

Abstract

PURPOSE:To achieve an increase in the number and capacity of capacitors without a larger size of the apparatus, by providing a through capacitor piercing an external drawer electrode in a gap between a housing and a pressure sensor while being engaged with a ring-like spacer. CONSTITUTION:A semiconductor pressure sensor 2 is arranged within a housing space of a housing 1 while a through capacitor 6 piercing an external drawer electrode 4 is arranged in a gap between the sensor 2 and the inner wall of the housing 1. A ring-like spacer 3 is arranged in the gap to be engaged with the through capacitor 6. This allows the arrangement of the through capacitor effectively utilizing a gap for reducing effect of external environment between the sensor and the housing thereby achieving a smaller size of the apparatus. This also permits the arranging of a plurality of through capacitors in the gap thereby achieving an increase in the number and total capacity of capacitors without a larger size thereof.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor pressure detection device, and more particularly to a semiconductor pressure detection device incorporating a noise reduction capacitor. The semiconductor pressure detection unit 5iii of the present invention is installed, for example, in an automobile engine compartment. Q is placed.

[Prior Art] FIG. 5 shows a conventional half-unit pressure detection device incorporating a noise reduction capacitor.

The above device includes a main body container including a shield case 13.14 and a case cover 11.12, and has a pressure introduction hole 1f and a storage space 71, a pressure introduction pipe 8 held in the storage space 71, and a lead member 21. Motsu semiconductor pressure sensor 4J-2
, a printed circuit board 91 held in the storage space 71 and having the IC 20 for amplification, an electrode member 15 for external extraction whose one end is electrically connected to the printed circuit board 91, and an electrode for external extraction held in the shield case 13. It has a feedthrough capacitor 6 that is passed through the member 15.

The feedthrough capacitor 6 reduces electromagnetic noise mixed into the output signal voltage.

[Problem to be solved 1. As explained above, the storage space of the conventional semiconductor pressure detection device with a built-in noise absorbing capacitor is limited to the printed circuit board 9.
1, an IC 20, and a feedthrough capacitor are built in, and furthermore, the external extraction electrode 15 is arranged in the same direction as the pressure introduction hole 1f, so there is a drawback that the volume of the storage space 71 is large.

The purpose of the present invention is to improve the above-mentioned drawbacks of the conventional semiconductor pressure detection device with a built-in capacitor. Specifically, it is an object of the present invention to provide a semiconductor pressure detection device with a built-in capacitor that requires a small volume despite having a feed-through capacitor. be.

Means for Solving Problem E] The semiconductor pressure detection device of the present invention includes a housing having a pressure introduction hole in a part, an electrode member for external extraction in the other part, and a storage space in the center, and a housing having a pressure introduction hole in the other part and a storage space in the center. A semiconductor pressure sensor having a pressure introduction pipe held in the housing and connected to the pressure introduction hole and a lead member connected to the electrode member is connected to an inner surface of the housing on the storage space side and a pressure introduction tube opposite to the inner surface. A ring-shaped spacer is disposed in the storage space between the outside surface of the semiconductor pressure sensor and the spacer, and the spacer is held by the spacer. 11r pole member is inserted through U
It is characterized by having a single capacitor.

[Function] In the semiconductor pressure detection device of the present invention, the semiconductor pressure sensor converts the detected pressure introduced from the pressure introduction pipe communicating with the pressure introduction hole into 11@voltage, and
The F+Q voltage is led out to the outside via the lead member and the external extraction electrode member.

In the present invention, the electrode member for external extraction, the feedthrough capacitor penetrated by the electrode member, and the ring-shaped spacer holding the feedthrough capacitor are connected to the inner surface of the housing on the storage space side and the outer surface of the semiconductor pressure sensor. Further, the feedthrough capacitor capacitively couples the external extraction electrode member and the grounded spacer.

Therefore, noise mixed into the external extraction electrode member is bypassed by the feedthrough capacitor.

[Effect] This device places a feedthrough capacitor connected to an electrode member for external extraction in the storage space (gap) between the inside surface of the housing on the storage space side and the outside surface of the semiconductor pressure sensor (especially its container). Furthermore, the feedthrough capacitor is engaged with the ring-shaped spacer, and the device has the following effects compared to the conventional device.

(1) It is necessary to provide a gap between the inner surface of the housing and the outer surface of the container of the semiconductor pressure sensor in order to reduce the influence of the external environment. According to the present invention, since the feedthrough capacitor is disposed by effectively utilizing this gap, the device can be made smaller.

(2) A plurality of feedthrough capacitors can be installed around the semiconductor pressure sensor, and the number of capacitors or the total capacity can be increased without increasing the size of the device.

[Embodiment] An embodiment of the capacitor built-in semiconductor pressure detection device of the present invention is shown in FIGS. 1, 2, and 3.

This device has a pressure introduction hole 1f at one end, an electrode member 4 for external extraction at the other end, and a storage space 9 at the center, and includes a housing composed of a main housing 1 and a sub-housing 5, and the storage space. 9, a semiconductor pressure sensor 2 having a pressure introduction pipe 8 connected to a pressure introduction hole 1f and a lead member 2b connected to an external extraction electrode member 4; and an inner surface 1g of the housing on the storage space 9 side. and a ring-shaped spacer 3 disposed in the storage space 9 between the outer surface 2a of the semiconductor pressure sensor 2 facing the inner surface 1g, and a feedthrough capacitor held by the spacer 3 and into which the external extraction electrode member 4 is inserted. It has 6.

The main housing 1 has a hexagonal hole shape, and has a bolt head 1C and a threaded portion 1e. The bolt head 10 has a concave portion formed from the top, and has a pressure introduction hole 1f in the middle six portions of the threaded portion 1e that communicates the four portions with the threaded portion tip 1d. The main housing 1 has an outer surface 1C with a hexagonal bolt shape and an inner surface 1Q with a mainly circular shape, and an additional semi-cylindrical inner surface 1h close to the four vertices 1a of the outer surface. The feedthrough capacitor 6 is arranged in that portion.

(Fig. 2) The semiconductor pressure sensor 2 includes a metal cylindrical container mounted on a bottom 2C made of an insulating material and a pressure introduction tube 8 protruding from the bottom 2C.
and a lead electrode 2b. Furthermore, the pressure introduction cylinder 8
is inserted into the pressure introduction hole 1f and the O-ring 7.

The sub-housing 5 has a recess 5a in the center of the bottom 5b, and the fourth part 5a engages the top of the cylindrical container of the semiconductor pressure sensor 2. The peripheral edge of the bottom surface 5b of the sub-housing 5 is engaged with the main housing 1, and the four parts of the main housing 1 form a sealed storage space 9.

The ring-shaped suberly 3 is engaged with the outer surface 2a of the cylindrical container of the semiconductor pressure sensor 2, and is arranged in the space between the outer surface 2a and the inner surface 19 of the main housing 1.

The base 1° 3 is made of copper, and has a planar shape corresponding to the cross-sectional shape of the inner surfaces 1q and 1h of the housing 1 (see FIG. 3), and the outer periphery of the semiconductor pressure sensor 2. It has a central hole 3a that engages the side surface 2a, three holes 3b that engage the pass-through capacitor 6, and a small hole 3c that engages the ground electrode material 4a.

The feedthrough capacitor 6 is engaged with a hole (3b in FIG. 3) opened in the ring-shaped subere 3, and the electrode member 4 for external extraction is inserted into the through hole of the feedthrough capacitor. The n-through hole side electrode (not shown) of the feedthrough capacitor 6 is soldered to the external lead-out electrode member 4, and the outer peripheral side electrode (not shown) of the feedthrough capacitor 6 is electrically connected to the copper spacer 3. .

The external lead-out electrode member 4 is made of copper, is supported by the sub-housing 5, has one end protruding into the center of the recess 5C of the sub-housing, and has the other end passing through the feedthrough capacitor.
It is connected to the lead member 2b of the semiconductor pressure sensor 2 via the intermediate electrode material 10.

The O-ring 7 stops the sealed space 9 from the pressure introduction hole 1f.

A cross-sectional view taken along line A-A of the semiconductor pressure detection device shown in FIG. 1 is shown in FIG.

The external lead-out electrode members 4b and 4c are made of copper, pass through the feedthrough capacitor 6, and are soldered to the inner electrodes (not shown) of the feedthrough capacitor.

The earth electrode material 4a is made of copper and is soldered to the spacer 3.

The electrode members 4b and 4c are power supply lines for the amplifier, and fr
Like the i-electrode material 4, it protrudes from the recess 5c of the II housing 5.

The middle electrode member 10 connects the lead electrode member 2b of the semiconductor pressure sensor 2 and the electrode member 4 for external extraction. Similarly, the electrode members 4a, 4b, and 4c are connected by intermediate electrode members (not shown).

To assemble this device, first, a member consisting of a semiconductor pressure hinge 2, an earth plate 3, and a feedthrough capacitor 6 is formed, and then a semiconductor pressure Fit the top of the sensor 2, and further insert the electrode members 4.4a, 4b, 4C into the through-holes of the condensers V. Next, the lead electrode member 2b and the electrode member 4 are soldered to the intermediate electrode 10, and the inner electrode (not shown) of the feedthrough capacitor 6 and the electrode member 4.4a are soldered.

Solder 4b and 4c. After R, the sub-housing 5 is wound around the tip of the main housing 1 while inserting the pressure introduction tube 8 of the semiconductor pressure sensor 2 into the pressure introduction hole 1f.

The operation of the semiconductor pressure detection device according to the above embodiment will be explained below.

The semiconductor pressure conversion element (
(not shown) converts the output to be measured introduced through the pressure introduction hole 1f into a signal voltage, and the signal voltage is amplified by an amplifier (not shown) built in the semiconductor pressure sensor, and then the output electrode It is led out from the recess 5C of the sub-housing 5 via the material 21, the intermediate electrode material 10, and the electrode member 4 for external extraction.

In the above embodiment gA, the spacer 3 is the semiconductor pressure sensor 9.
It is supported by the outer surface 2a of 2. Therefore, by fitting the top part of the semiconductor pressure sensor 2 into the recess 5a of the 01 housing 5, the external extraction electrode member 4.4b14
It becomes very easy to insert c into the different through hole of the feedthrough capacitor 6. In addition, feedthrough capacitors 6 are arranged near the tops 1a of the hexagonal ports 1 to 1, and the inner surface 1h of the main housing on the side of the storage space 91 has a semi-cylindrical shape to expand the storage space, so v4ffl is It is possible to make the main housing 1 more compact, and the wall thickness of the main housing 1 can be made as thick as possible. Further, a printed circuit board or the like is not required, and the number of parts is small.

FIG. 4 shows another embodiment of the semiconductor pressure detection device of the present invention.

The device of this embodiment differs from the device of the embodiment shown in FIG. The main difference is that the electrode member 41.42 has a termination 45.46 at the lower end of the feedthrough capacitor 61.62. Further, the output electrodes 22.23 and the electrode members 41.42 are respectively engaged with the external extraction electrode members 43.44 and are electrically connected. The functions of the main housing 52, the sub-housing 51, the base 93, and the semiconductor pressure sensor 121 are the same as those of the device shown in FIG.

In the embodiment shown in FIG. 4, since the semiconductor pressure sensor 121 has the output electrode members 22, 23 from the side opposite to the pressure introduction cylinder 8, the space related to the intermediate electrode member 2b of the device shown in FIG. 1 can be omitted, and the first It has the advantage of being more compact than the device shown in the figure. Furthermore, in the apparatus shown in FIGS. 1 and 4, the extraction electrode members 4, 43, 44 are arranged on the side opposite to the pressure introduction hole 1f, so that the lateral width 11] of the apparatus can be reduced. Of course, the feedthrough bridge member 41 or 42 may not terminate at the end portion 45, 46, but may pass through further feedthrough capacitors.

Note that the IC shown in FIG. 5 may be included in the semiconductor pressure sensor 2 or may be omitted in the present invention.

Note that the above-mentioned materials or partial structures can be changed without changing the gist of the present invention.

[Brief explanation of drawings]

FIG. 1 is a sectional view of one embodiment of a semiconductor pressure detection device with a built-in capacitor according to the present invention. 2 is a sectional view taken along the line A-A'' of the embodiment of the semiconductor pressure detection device with a built-in capacitor shown in FIG. 1. FIG. 443. FIG. 4 is a sectional view of another embodiment of the capacitor built-in semiconductor pressure detection device of the present invention. FIG. 5 is a sectional view of a conventional example of the capacitor built-in semiconductor pressure detection device. 1... Main housing 5... Sub-housing 2... Semiconductor pressure sensor 3... Ring-shaped spacer 6... Yamadori condenser Figure 4

Claims (2)

[Claims] (1) A housing having a pressure introduction hole in one part, an electrode member for external extraction in the other part, and a storage space in the center, a pressure introduction tube held in the storage space and connected to the pressure introduction hole, and the electrode. a semiconductor pressure sensor having a lead member connected to the member; and a semiconductor pressure sensor disposed in the storage space between the inner surface of the housing on the storage space side and the outer surface of the semiconductor pressure sensor opposite to the inner surface. A semiconductor pressure detection device comprising: a ring-shaped spacer; and a feedthrough capacitor held by the spacer and into which the electrode member is inserted. (2) The semiconductor pressure sensor according to claim 1, wherein the outer shape of the central portion of the housing is a polygon, and the feedthrough capacitor is arranged and held at a position close to the apex of the polygon. Detection device.