JPS63250465A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPS63250465A JPS63250465A JP8765687A JP8765687A JPS63250465A JP S63250465 A JPS63250465 A JP S63250465A JP 8765687 A JP8765687 A JP 8765687A JP 8765687 A JP8765687 A JP 8765687A JP S63250465 A JPS63250465 A JP S63250465A
- Authority
- JP
- Japan
- Prior art keywords
- wall
- reactor
- film
- vapor phase
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008016 vaporization Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 8
- 238000009834 vaporization Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000001947 vapour-phase growth Methods 0.000 description 33
- 239000007789 gas Substances 0.000 description 28
- 239000007788 liquid Substances 0.000 description 12
- 239000003921 oil Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000007787 solid Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000010724 circulating oil Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 101100400452 Caenorhabditis elegans map-2 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は気相成長装置に関し、特に固体または液体を加
熱蒸発させこの蒸発ガスを原料ガスに用いる気相成長装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus that heats and evaporates a solid or liquid and uses the evaporated gas as a source gas.
従来、液体あるいは固体を加熱蒸発させたガスを原料ガ
スとする気相成長に用いる気相成長装置には、大きく分
けてコールドウオール型とホットウォール型の２ｓ類が
ある。Conventionally, vapor phase growth apparatuses used for vapor phase growth using gas obtained by heating and vaporizing a liquid or solid as a raw material gas are broadly divided into two types: cold wall type and hot wall type.
ホットウォール型気相成長装置の模式的断面図を第５図
に示す。この装置は、反応炉５、液体原料４を気化する
気化室３、この気化室３を加熱するヒータ７２、ウェハ
ー８及び反応炉５を加熱するヒータ７１、反応炉中のガ
ス流速の調節や膜の堆積を促進させるために用いる０２
やＡｒ等のガスのガス導入管” １＊ １２ 、Ａｒガ
ス等のキャリヤーガスの導入管１３、排気口１４及びバ
ルブ２１．２２，２３．２４からなる。A schematic cross-sectional view of the hot wall type vapor phase growth apparatus is shown in FIG. This device includes a reactor 5, a vaporization chamber 3 that vaporizes the liquid raw material 4, a heater 72 that heats the vaporization chamber 3, a heater 71 that heats the wafer 8 and the reactor 5, a gas flow rate adjustment in the reactor, and a membrane 02 used to promote the deposition of
It consists of a gas inlet pipe 1*12 for a gas such as or Ar gas, an inlet pipe 13 for a carrier gas such as Ar gas, an exhaust port 14, and valves 21, 22, 23, 24.
ホットウォール型気相成長装置を用いて、液体あるいは
固体を加熱蒸発させたガスを原料ガスの一部として膜を
気相成長させる方法を、Ｔａ２０５膜を気相成長する方
法を例として説明する。Ｔａ２Ｏｇの原料としてここで
用いるＴａ（ＯＣｚＨｓ）ｓは室温では液体であるため
原料を輸送するために蒸気圧を高める必要があり、気化
室３をヒータ７２によリ１００〜２００℃に加熱し、Ｔ
ａ（ＯＣｚＨｓ）ｓ ｆ気化しやすくする。さらにキャ
リヤーガス導入管１３よりキャリヤーガス全気化室３に
導入し、バブリングして、Ｔａ（ＯＣ２Ｈｔ）ｓ ′
ｔ−反応炉５に導入し、ウェハー８上にＴａｚＯｓ、ｔ
１％を成長させる。A method of vapor phase growing a Ta205 film using a hot wall type vapor phase growth apparatus using gas obtained by heating and vaporizing a liquid or solid as part of the source gas will be described as an example. Since Ta(OCzHs)s used here as the raw material for Ta2Og is a liquid at room temperature, it is necessary to increase the vapor pressure to transport the raw material. T
a(OCzHs)s f Makes it easier to vaporize. Furthermore, the carrier gas is introduced into the total vaporization chamber 3 through the carrier gas introduction pipe 13 and bubbled to form Ta(OC2Ht)s'
TazOs is introduced into the t-reactor 5, and TazOs, t
Grow 1%.
この時、反応炉５はヒータ７１で３００〜６００℃に加
熱されている。At this time, the reactor 5 is heated to 300 to 600°C by the heater 71.
次に、コールドウオール型気相成長装置の模式的断面図
全第６図に示す。この装置は、はぼ第５図の装置と同じ
であるが、反応炉５ｆｉ反応炉外壁５１と反応炉内壁５
２とからなり、冷却水６を反応炉外壁５１と反応炉内壁
５２との間に循環させ反応炉全冷却されている。なお、
ウェハー８はヒータ７３Ｖｃより所望の成長温度に加熱
される。Next, a schematic cross-sectional view of a cold wall type vapor phase growth apparatus is shown in FIG. 6. This device is essentially the same as the device shown in FIG.
The reactor is completely cooled by circulating cooling water 6 between the reactor outer wall 51 and the reactor inner wall 52. In addition,
Wafer 8 is heated to a desired growth temperature by heater 73Vc.
この装置を用いて膜を気相成長する方法は、前述のホッ
ト・ウオール型気相成長装置と同じである。The method of vapor phase growth of a film using this apparatus is the same as the above-mentioned hot wall type vapor phase growth apparatus.
上述した従来のホットウォール型またはコールドウオー
ル型気相成長装置は、以下に述べる欠点がある。The conventional hot wall type or cold wall type vapor phase growth apparatus described above has the following drawbacks.
ホットウォール型気相成長装置は反応炉全体が成長温度
とほぼ同じ程度の温度であるため、膜の成長がウェハー
表面ばかりでなく反応炉壁でも起こり、膜形成を繰返す
うちに反応炉壁に付着した膜がはがれるようになるため
ゴミの発生原因となる欠点を有する。また反応炉全体が
加熱されるため気相中での反応が起こりやすく悪い膜質
の膜が形成され易いこと、粒子が発生し易いことなどの
欠点がある。従ってＴａｚＱｓ を形成する場合には
ホット・ウオール型気相成長装＃金用いるのけ実用的で
ない。In hot wall type vapor phase growth equipment, the entire reactor is at almost the same temperature as the growth temperature, so the film grows not only on the wafer surface but also on the reactor wall, and as the film is repeatedly formed, it may adhere to the reactor wall. This has the disadvantage of causing dust to be generated as the film is peeled off. Furthermore, since the entire reactor is heated, there are disadvantages such as reactions in the gas phase tending to occur, a film with poor quality is likely to be formed, and particles are likely to be generated. Therefore, when forming TazQs, it is not practical to use a hot wall type vapor phase growth apparatus.
一方、コールドウオール型気相成長装置は、反応炉が冷
却水で冷やされているため、反応炉の内壁温度が室温程
度になっている。そのため液体や固体の原料を加熱気化
して反応炉内に導入された原料ガスのうち、反応炉壁に
接触した原料ガスは温度が降下し、反応炉壁に凝結する
ので、原料ガス中の原料濃度か低下し膜の成長速度が遅
くなる欠点がある。さらに反応炉壁に付着した凝結物が
ウェハーの交換時に反応炉内に入る大気中の水分と反応
して粉末状の生成物ができ、これがゴミの発生原因とな
る欠点かある。On the other hand, in a cold wall type vapor phase growth apparatus, since the reactor is cooled with cooling water, the temperature of the inner wall of the reactor is about room temperature. Therefore, among the raw material gases introduced into the reactor by heating and vaporizing liquid or solid raw materials, the raw material gases that come into contact with the reactor walls drop in temperature and condense on the reactor walls. The disadvantage is that the concentration decreases and the film growth rate slows down. Furthermore, the condensate adhering to the reactor wall reacts with moisture in the atmosphere entering the reactor when wafers are replaced, forming a powdery product, which is a source of dust.
以上のように、液体もしくは固体金加熱蒸発されたガス
を原料ガスに用いて膜形成を行う場合には従来のホット
ウォール型またはコールドウオール型気相成長装置では
良質の膜は形成できない。As described above, when forming a film using a gas heated and evaporated from liquid or solid gold as a raw material gas, a high-quality film cannot be formed using a conventional hot wall type or cold wall type vapor phase growth apparatus.
本発明の気相成長装置は、基板を加熱する第１の加熱手
段と、基板を設置し、基板に原料ガスを使用して膜堆積
を行なう反応炉と、反応炉の壁温を膜堆積が生じる温度
より低くかつ反応炉壁に原□ 料ガスが凝結する温度よ
りも高い温度に保つ第２の加熱手段とを有している。The vapor phase growth apparatus of the present invention includes a first heating means for heating a substrate, a reactor in which the substrate is placed and a film is deposited on the substrate using a raw material gas, and a wall temperature of the reactor is controlled so that the film can be deposited. and second heating means for maintaining the temperature at a temperature lower than the temperature at which the reactor gas occurs and higher than the temperature at which the raw material gas condenses on the walls of the reactor.
従来のホットウォール型気相成長装置やコールドウオー
ル型気相成長装置を用いて、液体もしくは固体を原料と
して膜形成を行った場合には、反応炉の壁に膜が形成さ
れたりあるいは原料が凝結することか問題であった。壁
に膜が形成されるのは壁が充分に加熱されているためで
あり、原料が凝結するのＶｉ壁が冷えているためである
。本発明はこれを防止するために、コールドウオール型
気相成長装置を用い当該装置の反応炉壁を膜成長温度以
下の所望の温度に加熱設定できる機能？持たせたことに
特徴がある。即ち凝結が生じないようかつ膜成長が生じ
にくいような温度に壁を加熱するものである。When forming a film using a liquid or solid as a raw material using a conventional hot-wall or cold-wall vapor phase epitaxy apparatus, a film may be formed on the wall of the reactor or the raw material may condense. The question was what to do. A film is formed on the wall because the wall is sufficiently heated, and the raw material condenses because the Vi wall is cold. In order to prevent this, the present invention uses a cold wall type vapor phase growth apparatus and has a function that allows the reactor wall of the apparatus to be heated to a desired temperature below the film growth temperature. There is a characteristic in having it. That is, the wall is heated to a temperature that prevents condensation and makes it difficult for film growth to occur.
次に本発明について図面を用いて説明する。 Next, the present invention will be explained using the drawings.
第１図は本発明の第１の実施例の気相装置の模式的断面
図である。この装置は、反応炉外壁５１と反応炉内壁５
２とからなる反応炉５、液体原料４の気化室３、ウェハ
ー８を加熱するヒータ７３、気化室３及び配管を加熱す
るヒータ７２、反応炉外壁５１と反応炉内壁５２０間を
循環するオイル６１、オイル６１を加熱し循環させる装
置９、反応炉内に０２やＡｒ等のガスを供給するガス導
入管１１．１２．気化された原料４を輸送するＡｒガス
等のキャリヤガスの導入管１３、排気口１４及びバルブ
２１，２２，２３．２４から成る。FIG. 1 is a schematic cross-sectional view of a gas phase apparatus according to a first embodiment of the present invention. This device consists of a reactor outer wall 51 and a reactor inner wall 5.
2, a vaporization chamber 3 for the liquid raw material 4, a heater 73 that heats the wafer 8, a heater 72 that heats the vaporization chamber 3 and piping, and oil 61 that circulates between the reactor outer wall 51 and the reactor inner wall 520. , a device 9 for heating and circulating oil 61, and gas introduction pipes 11, 12, which supply gases such as 02 and Ar into the reactor. It consists of an inlet pipe 13 for a carrier gas such as Ar gas for transporting the vaporized raw material 4, an exhaust port 14, and valves 21, 22, 23, and 24.
本装置は反応炉壁を２重にして、内壁５１と外壁５２０
間に加熱したオイル６１を循環させて、反応、炉内壁５
２を所望の温ばに設定できる機能を有している。This device has double reactor walls, an inner wall 51 and an outer wall 520.
The heated oil 61 is circulated between the reactors and the inner wall 5 of the furnace.
2 to a desired temperature.
次に本発明を用いた気相成長装置を使い、原料Ｔａ（Ｏ
Ｃｚ）ｌｓ）ｓを熱分解して’ｒａｚｏｓ膜を成長する
方法を例として説明する。Next, using the vapor phase growth apparatus according to the present invention, the raw material Ta(O
A method of growing a 'razos film by thermally decomposing Cz)ls)s will be described as an example.
液体原料であるＴａ （ＱＣ２Ｈ５） ５ の蒸発！
ｋを高めるため、気化室３’ｉヒータ７２により１００
〜２００℃に加熱しＡｒ Ｔｈキャリヤーガスとして、
キャリヤガス導入管１３より、導入してバブリングして
Ｔａ（ＯＣｚＨｓ）ｓ を反応炉５に導入し、加熱さ
れたウェハー８上にＴａｚＱｓｐＱを成長させる。Evaporation of liquid raw material Ta (QC2H5) 5!
In order to increase k, the vaporization chamber 3'i heater 72
Heated to ~200°C as Ar Th carrier gas,
Ta(OCzHs)s is introduced into the reactor 5 through the carrier gas introduction pipe 13 and bubbled, and TazQspQ is grown on the heated wafer 8.
この場合、ガス導入前に加熱されたオイル６１を循環し
て、反応炉内壁５２を充分に加熱しておく。In this case, the heated oil 61 is circulated before the gas is introduced to sufficiently heat the reactor inner wall 52.
加熱するオイル６１の温度は反応炉壁に生成物が付着し
ないでかつ原料ガスが凝結しない温度に設定し、この場
合５０〜２００℃ぐらいが適当で、また反応炉内５に置
かれたウエノ１−８＆よ、３５０〜５００℃ぐらいに加
熱するのが良い。The temperature of the oil 61 to be heated is set at a temperature at which products do not adhere to the reactor wall and the raw material gas does not condense. -8&yo, it is best to heat it to about 350-500℃.
以上の方法で成長した’ｌ”ａｚＱｓ膜に関する成長速
度と成長温度の関係を第２図に示す。また第２図には、
第６図に示した従来の気相成長装置Ｍを用いた場合の成
長速度と成長温朋との関係もあわせて示す。本発明音用
いた気相成長装置全使用すると、特に低温部で、成長速
度が２−５倍はど速くなる。また従来の装置を用いた場
合には反応炉のガス導入口付近ＶＣ原料の凝縮が観察さ
れたか、本発明の装置では原料の＃ｌ縮が起こらず、ゴ
ミの発生もほとんどない。Figure 2 shows the relationship between growth rate and growth temperature for the 'l''azQs film grown by the above method.
The relationship between the growth rate and the growth temperature when the conventional vapor phase growth apparatus M shown in FIG. 6 is used is also shown. When the entire vapor phase growth apparatus using the sound of the present invention is used, the growth rate becomes 2 to 5 times faster, especially in the low temperature part. Furthermore, condensation of the VC raw material near the gas inlet of the reactor was observed when the conventional apparatus was used, but no condensation of the raw material occurred in the apparatus of the present invention, and almost no dust was generated.
以上のように本発明になる気相成長装置を用いることで
良質の膜が形成できる上に、膜の成長速度か速くでき、
量産性のよい膜の成長を行なうことが可能になった。As described above, by using the vapor phase growth apparatus of the present invention, not only can a high quality film be formed, but also the film growth rate can be increased.
It has become possible to grow films with good mass productivity.
次に本発明を用いた気相成長装置の第２の実施例を説明
する。Next, a second embodiment of a vapor phase growth apparatus using the present invention will be described.
本実施例の気相成長装置の模式的断面図を第３図に示す
。図において、第１図と同じ番号は同一機能を有するも
のを示す。A schematic cross-sectional view of the vapor phase growth apparatus of this example is shown in FIG. In the figure, the same numbers as in FIG. 1 indicate components having the same functions.
本装ｆｉｌＶｉ、反応炉外壁５１、反応炉中壁５３及び
反応炉内壁５２から成る反応炉５を有し、反応炉内壁５
２と反応炉中壁５３との間に第１の実施例の場合と同様
に加熱されたオイル６１ｆｔ循環させ、さらに反応炉中
壁５３と反応炉外壁５１との間に冷却水６を循環させる
のか特徴である。加熱したオイル６１を循環させる効果
は、第１の実施例で説明した通りである。冷却水６を循
環させるのは、反応炉外側の温度が高温になるのを防止
する念めである。高温になるのを防止することで、装置
の反応炉５以外の部分、例えば制御系等の電気回路への
悪影響を防止し、かつ人体の接触等による火傷を防止す
ることができる。It has a reactor 5 consisting of a main mounting filVi, a reactor outer wall 51, a reactor inner wall 53, and a reactor inner wall 52, and the reactor inner wall 5
Similarly to the first embodiment, 61 ft of heated oil is circulated between the reactor inner wall 53 and the reactor inner wall 53, and cooling water 6 is further circulated between the reactor inner wall 53 and the reactor outer wall 51. It is a characteristic of The effect of circulating the heated oil 61 is as described in the first embodiment. The purpose of circulating the cooling water 6 is to prevent the temperature outside the reactor from becoming too high. By preventing the temperature from becoming high, it is possible to prevent adverse effects on parts of the apparatus other than the reactor 5, for example, electric circuits such as the control system, and to prevent burns caused by contact with the human body.
本装置を用いてＴａｚＯｓ膜を成長する方法は第１の実
施例と同様であり、膜成長に関する効果は変わらない。The method of growing a TazOs film using this apparatus is the same as in the first embodiment, and the effects regarding film growth remain the same.
次に本発明を用いた気相成長装置の第３の実施例を説明
する。Next, a third embodiment of a vapor phase growth apparatus using the present invention will be described.
本実施例の気相成長装置の模式的断面図を第４図に示す
。図において、第１図と同じ番号は同一機能を有するも
のを示す。FIG. 4 shows a schematic cross-sectional view of the vapor phase growth apparatus of this example. In the figure, the same numbers as in FIG. 1 indicate components having the same functions.
本装置は、反応炉内壁５２をヒータ７４で加熱し、壁温
を調節することを特徴とする。反応炉壁を加熱する方法
は、赤外ランプ等の方法を用いてもよい。本装置の場合
は、実施例１及び２に比較して、オイル金加熱し循環さ
せる装置が不用のため、小型化できるのが利点である。This apparatus is characterized in that the inner wall 52 of the reactor is heated by a heater 74 to adjust the wall temperature. A method such as an infrared lamp may be used to heat the reactor wall. Compared to Examples 1 and 2, the present apparatus has the advantage that it can be made smaller because it does not require a device for heating and circulating oil gold.
本装置を用いてＴａｘｅｓ膜を気相成長する方法は第１
及び第２の実施例と同様で、膜形成における効果は同じ
である。The first method for vapor phase growth of Taxes film using this device is
This is similar to the second embodiment, and the effect in film formation is the same.
以との本発明の実施例では原料としてＴａ（ＯＣｚＨ５
）５を用いてＴａｚＯｓ膜を気相成長する場合で説明し
たが、他の化合物からなる液体原料及び固体原料を用い
てもその効果は同じである。In the following examples of the present invention, Ta(OCzH5
) 5 is used for vapor phase growth of a TazOs film, but the effect is the same even if a liquid raw material or a solid raw material made of other compounds is used.
また、固体原料あるいは液体原料を用いてＴａｇ’ｓ
膜板外のＨｆ０ｚ、Ｔｉ０ｚ、Ｚｒ０ｚ、ＡＡｇｏｓ等
の膜成長に本発明の気相成長装置を用いても効果がある
。In addition, Tag's can be made using solid or liquid raw materials.
It is also effective to use the vapor phase growth apparatus of the present invention for growing films of Hf0z, Ti0z, Zr0z, AAgos, etc. outside the membrane plate.
さらに、実施例１及び２で用いたオイルの代わりに、オ
イル以外の流体、気体を用いてもよい。Furthermore, instead of the oil used in Examples 1 and 2, a fluid or gas other than oil may be used.
特に１００℃以下の場合は加熱した水を用いても同様の
効果が得られる。In particular, when the temperature is 100° C. or lower, the same effect can be obtained even if heated water is used.
以上説明したように本発明は反応炉壁の温度を反応炉壁
に膜堆積が生ずる温度より低くかつ反応炉壁に原料が凝
結する温度よりも高い温度に設定できる機能を気相成長
装置に持たせることにより、反応炉内壁でのゴミの発生
を防止できるため電気的特性の優れた高品質！ｉ桑が形
成でき、かつ膜成長時の成長速度を速くする効果がある
。As explained above, the present invention provides a vapor phase growth apparatus with a function that allows the temperature of the reactor wall to be set lower than the temperature at which film deposition occurs on the reactor wall and higher than the temperature at which the raw material condenses on the reactor wall. By doing so, it is possible to prevent the generation of dust on the inner wall of the reactor, resulting in high quality with excellent electrical characteristics! It has the effect of forming i-mulberry and increasing the growth rate during film growth.
第１図は本発明の気相成長装置の第１の実施例の模式的
断面図、第２図は本発明の第一の実施例に示した気相成
長装置を用いてＴａ２０５膜を気相成長した場合の成長
速度との成長温度との関係及び従来の気相成長装置を用
いた場合の成長速度との関係を示す図、第３図は本発明
の気相成長装置の第２の実施例の模式的断面構造図、第
４図は本発明の気相成長装置の第３の実施例の模式的断
面構造図、第５図は従来のホットウォール型の気相成長
装置の模式的断面図、第６図は従来のコールドウオール
型の気相成長装置の模式的断面構造図である。
１１．１２・・・・・・ガス導入管、１３・・・・・・
キャリアーガス導入管、１４・・・・・・排気口、２１
．２２゜２３．２４・・・・・・バルブ、３・・・・・
・気化室、４・・・・・・原料、５・・・・・・反応炉
、５１・・・・・・反応炉外壁、５２・・・・・・反応
炉内壁、５３・・・・・・反応炉中壁、６・・・・・・
冷却水、６１・・・・・・オイル、７１．７２．７３・
・・・・・ヒータ、８・・・・・・ウェハー、９・・・
・・・オイルを加熱し循環させる装置。
代理人 弁理士 内 原 二 ゛パ町
第２図FIG. 1 is a schematic cross-sectional view of the first embodiment of the vapor phase growth apparatus of the present invention, and FIG. 2 is a schematic cross-sectional view of the vapor phase growth apparatus shown in the first embodiment of the invention. A diagram showing the relationship between the growth rate and the growth temperature in the case of growth and the relationship between the growth rate and the growth rate when using a conventional vapor phase growth apparatus. FIG. FIG. 4 is a schematic cross-sectional view of the third embodiment of the vapor phase growth apparatus of the present invention, and FIG. 5 is a schematic cross-sectional view of a conventional hot wall type vapor growth apparatus. 6 are schematic cross-sectional structural diagrams of a conventional cold wall type vapor phase growth apparatus. 11.12...Gas introduction pipe, 13...
Carrier gas introduction pipe, 14...Exhaust port, 21
．． 22゜23.24...Valve, 3...
- Vaporization chamber, 4... Raw material, 5... Reactor, 51... Reactor outer wall, 52... Reactor inner wall, 53... ...Reactor inner wall, 6...
Cooling water, 61... Oil, 71.72.73.
...Heater, 8...Wafer, 9...
...A device that heats and circulates oil. Agent Patent Attorney Ni Uchihara Ipa Town Map 2
Claims (1)
行なう反応炉と、前記基板を加熱する第１の加熱手段と
、前記反応炉の壁温を前記膜堆積が生じる温度より低く
かつ前記反応炉壁に前記原料ガスが凝結する温度よりも
高い温度に保つ第２の加熱手段とを有することを特徴と
する気相成長装置。a reactor in which a substrate is installed and a film is deposited on the substrate using a raw material gas; a first heating means for heating the substrate; and second heating means for maintaining the reactor wall at a temperature higher than the temperature at which the raw material gas condenses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8765687A JPH0665751B2 (en) | 1987-04-08 | 1987-04-08 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8765687A JPH0665751B2 (en) | 1987-04-08 | 1987-04-08 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63250465A true JPS63250465A (en) | 1988-10-18 |
| JPH0665751B2 JPH0665751B2 (en) | 1994-08-24 |
Family
ID=13920999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8765687A Expired - Lifetime JPH0665751B2 (en) | 1987-04-08 | 1987-04-08 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0665751B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000042236A3 (en) * | 1999-01-13 | 2000-11-23 | Tokyo Electron Ltd | Processing system and method for chemical vapor deposition |
-
1987
- 1987-04-08 JP JP8765687A patent/JPH0665751B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000042236A3 (en) * | 1999-01-13 | 2000-11-23 | Tokyo Electron Ltd | Processing system and method for chemical vapor deposition |
| US6409837B1 (en) | 1999-01-13 | 2002-06-25 | Tokyo Electron Limited | Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0665751B2 (en) | 1994-08-24 |
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