JPS63247375A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS63247375A JPS63247375A JP8093687A JP8093687A JPS63247375A JP S63247375 A JPS63247375 A JP S63247375A JP 8093687 A JP8093687 A JP 8093687A JP 8093687 A JP8093687 A JP 8093687A JP S63247375 A JPS63247375 A JP S63247375A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- groove
- plating
- copper
- beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000007747 plating Methods 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 2
- 238000010408 sweeping Methods 0.000 claims 2
- 239000010949 copper Substances 0.000 abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000003638 chemical reducing agent Substances 0.000 abstract 1
- 239000008139 complexing agent Substances 0.000 abstract 1
- 150000001879 copper Chemical class 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 9
- 238000003754 machining Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/161—Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、被加工物表面に選択的に微細なめつき膜を形
成する無電解めっき法に係り、特に基材との密着力を向
上させるパターン形成方法に関する０
〔従来の技術〕
無電解めっきに関する従来の装置は、基材表面にレーザ
ビームを照射し、活性化処理を行ってからめっきを生成
させる方法が知られている。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an electroless plating method for selectively forming a fine plating film on the surface of a workpiece, and particularly for improving adhesion to a base material. 0 Related to Pattern Forming Method [Prior Art] As a conventional apparatus for electroless plating, a method is known in which a laser beam is irradiated onto the surface of a base material, an activation process is performed, and then plating is generated.
なおこの種の技術として関連・するものにはたとえば特
開昭５８−１８６９８８号が挙げられる。A related technique of this type is, for example, Japanese Patent Application Laid-open No. 186988/1983.
上記従来技術は、めっき反応によって生じる泡を逃がす
ことについて配慮がされてなく、そのためレーザの熱を
めっき液から逃がせず基材にコゲによる穴あきが生じる
という問題があった。The above-mentioned conventional technology does not take into consideration the release of bubbles generated by the plating reaction, and therefore has the problem that the laser heat cannot be released from the plating solution, causing holes in the base material due to burnt.
本発明の目的は、レーザビームによって基材に一定の溝
を作ることによってパターンの密着力をより高め、また
泡による基材のコゲを防いで微細な銅パターンを得るこ
とにある。An object of the present invention is to further increase the adhesion of the pattern by creating certain grooves in the base material using a laser beam, and to obtain a fine copper pattern by preventing the base material from burning due to bubbles.
上記目的は、レーザめつきを施す前に基材にレーザビー
ムを照射して溝を作ることにより達成される。The above object is achieved by irradiating the substrate with a laser beam to form grooves before laser plating.
レーザめつきを施す前にレーザビームによって基材に溝
を作っておくと、基材表面がエッチ／グされて凹凸がな
くなるため密着力が増すとともに泡の逃げが良くなり、
再現性良く良好なパターンが得られる。If grooves are created in the base material using a laser beam before laser plating, the surface of the base material will be etched/etched and unevenness will be eliminated, increasing adhesion and improving the escape of bubbles.
A good pattern with good reproducibility can be obtained.
銅パターンを施す前にレーザビームによって基材にダメ
ージを与えると、基材表面がエツチングされて濡れ性が
向上しレーザめつき時に泡の逃げが良くなる。泡の逃げ
が良いために１．レーザのめつき反応によって発生する
熱が基材附近に滞留することがなく、基材が焦げたり、
パターンが予想以上に広がるという欠陥が生じない。If the base material is damaged by a laser beam before the copper pattern is applied, the surface of the base material will be etched, improving wettability and allowing bubbles to escape during laser plating. 1. Because the bubbles escape well. The heat generated by the laser plating reaction does not stay near the base material, causing the base material to burn or burn.
The defect that the pattern spreads more than expected does not occur.
以下１本発明の一実施例について説明する。 An embodiment of the present invention will be described below.
第１図は本実施例の構成を示す図である。１はレーザビ
ームのエネルギー７Ｍ、４は加工液３を昇温する加熱器
、５け加熱器４から送られた液を収容する局所ノズル、
７はＸ−Ｙテーブル、２はレーザビーム、６は基材であ
る。FIG. 1 is a diagram showing the configuration of this embodiment. 1 is a laser beam energy of 7M, 4 is a heater that raises the temperature of the processing liquid 3, 5 is a local nozzle that accommodates the liquid sent from the heater 4,
7 is an X-Y table, 2 is a laser beam, and 6 is a base material.
エネルギー源１は出力０．１〜２．２ｗ、波長４８８ｎ
ｍ のアルゴンレーザで、ここから出力されるレーザビ
ーム２は局所ノズル５内にある基材６の所定の位置へ照
射される。Energy source 1 has an output of 0.1 to 2.2W and a wavelength of 488n.
The laser beam 2 outputted from the argon laser is irradiated to a predetermined position of the base material 6 within the local nozzle 5.
加工液３は表１に示すような組成となっており加熱器４
により７０℃まで昇温されて局所ノズル５へ送られる。The machining fluid 3 has a composition as shown in Table 1, and is heated to the heater 4.
The temperature is raised to 70° C. and sent to the local nozzle 5.
局所ノズル５内の基材６は、ガラス布強化ポリイミド樹
脂基材であり、表面の所定の位ｔヘレーザビーム２をス
ポット径５０μｍ１加工点でのエネルギ０．１〜０．５
Ｗ、 １００μｍ／ＳｅＧの速度でスイープする。こ
の作業が終了した時の基材の表面は約１〜５０μｍの深
さのダメージ溝が重箱 １ 表
（注）ＰＥＧ ：ボリエテレンクリコールＭＷ ：分子
量
来ており、スイープ速度が速いため極微量のＣＵしか生
成されていない。加工液を用いずにレーザービームでこ
の溝を作ろうとすると、加工液による冷却作用がないた
め、レーザの熱エネルギーを放熱できず、基材が焦げる
。まためっきの核となるＣｕの生成もない。この後、溝
の位置にレーザビーム２をスポット径５０Ａｍ、加工点
エネルギ０．５〜０．８Ｗ、 １〜５０μｍ／ｓｅｃの
速度でスイープすると、レーザのエネルギーにより加工
液３からＣＵを析出させてこの溝にＣｕめつきを生成す
る。この時の加工液の温度は６０℃〜８０℃である。生
成しためつきパターンの厚さは約５０μｍ〜１００μｍ
になり、溝に埋め込まれた状態となる。Ｃｕめつき生成
時に泡が発生する。これは加工液の加温による溶存気体
の分離とＣｕ析出による反応水素の発生によるものであ
る。この溝を得たことにより、発生した泡が逃げやすく
なるので、泡によるレーザビーム２の焦点のばらつきを
防ぐことができ、パターン精度を向上させる。また基材
表面は元来凹凸がはげしく、加工液を流しても開部分に
付着した空気は逃げに＜〈、加工液の濡れ性を悪くして
いる。基材に弱いレーザビームを照射することくよって
、溝を形成し、もって基材の凹凸の影響を消し、付着し
た空気を除去して基材の濡れ性を良くする効果もある。The base material 6 in the local nozzle 5 is a glass cloth reinforced polyimide resin base material, and the laser beam 2 is directed to a predetermined position on the surface with a spot diameter of 50 μm and an energy of 0.1 to 0.5 at each processing point.
W, sweep at a speed of 100 μm/SeG. When this work is completed, the surface of the base material has damage grooves with a depth of approximately 1 to 50 μm. 1 Table (Note) PEG: Boriethelene glycol MW: The molecular weight has increased and the sweep speed is fast, so a very small amount of Only CUs are generated. If an attempt is made to create this groove with a laser beam without using a machining fluid, the heat energy of the laser cannot be dissipated because the machining fluid has no cooling effect, and the base material will burn. Further, there is no generation of Cu, which becomes the core of plating. After that, when the laser beam 2 is swept at the groove position with a spot diameter of 50 Am, processing point energy of 0.5 to 0.8 W, and a speed of 1 to 50 μm/sec, CU is precipitated from the processing fluid 3 by the laser energy. Cu plating is generated in this groove. The temperature of the machining fluid at this time is 60°C to 80°C. The thickness of the generated eyelid pattern is approximately 50 μm to 100 μm
, and it becomes embedded in the groove. Bubbles are generated during Cu plating. This is due to separation of dissolved gas due to heating of the processing fluid and generation of reactive hydrogen due to Cu precipitation. By providing this groove, generated bubbles can easily escape, so it is possible to prevent variations in the focus of the laser beam 2 due to bubbles, and improve pattern accuracy. In addition, the surface of the base material is originally highly uneven, and even when the machining fluid is flowed, air adhering to the open portions escapes and impairs the wettability of the machining fluid. By irradiating the base material with a weak laser beam, grooves are formed, thereby eliminating the effects of irregularities on the base material, removing attached air, and improving the wettability of the base material.
本発明によれば、基材と銅パターンの密着力が向上し、
また基材に安定した微細パターンを生成することができ
る。According to the present invention, the adhesion between the base material and the copper pattern is improved,
Further, a stable fine pattern can be generated on the base material.
第１図は本発明の一実施例を示す装置の構成図である。 ２・・・レーザビーム、 ６・・・加工液、 ５・・・局所ノズル、 ６・・・基材。 FIG. 1 is a block diagram of an apparatus showing an embodiment of the present invention. 2...Laser beam, 6... Processing fluid, 5...Local nozzle, 6...Base material.
Claims (1)
該基材上に金属パターンを生成するパターン形成方法に
おいて、めつき加工液中でレーザビームをスイープして
前記基材に溝を生成し、その後前記めつき加工液中で前
記レーザビームより高エネルギーのレーザビームを前記
溝に沿つて前記スイープより低速度でスイープして前記
金属パターンを生成することを特徴とするパターン形成
方法。1. In a pattern forming method in which a laser beam is irradiated onto a base material and a metal pattern is generated on the base material by a plating reaction, a groove is created on the base material by sweeping the laser beam in a plating solution, and then A pattern forming method characterized in that the metal pattern is generated by sweeping a laser beam with higher energy than the laser beam along the groove at a lower speed than the sweep in the plating liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8093687A JPS63247375A (en) | 1987-04-03 | 1987-04-03 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8093687A JPS63247375A (en) | 1987-04-03 | 1987-04-03 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63247375A true JPS63247375A (en) | 1988-10-14 |
Family
ID=13732347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8093687A Pending JPS63247375A (en) | 1987-04-03 | 1987-04-03 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63247375A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04202670A (en) * | 1990-11-30 | 1992-07-23 | Hitachi Ltd | Surface modified metallic member, its production, and its use |
| JP2016516903A (en) * | 2013-04-02 | 2016-06-09 | エムエスティ− コリア シ−オ−．， エルティ−ディ−．ＭＳＴ ＫＯＲＥＡ Ｃｏ．， Ｌｔｄ． | Laser direct structuring method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63212085A (en) * | 1987-02-27 | 1988-09-05 | Toshiba Corp | Laser beam machining and treating method and its device |
-
1987
- 1987-04-03 JP JP8093687A patent/JPS63247375A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63212085A (en) * | 1987-02-27 | 1988-09-05 | Toshiba Corp | Laser beam machining and treating method and its device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04202670A (en) * | 1990-11-30 | 1992-07-23 | Hitachi Ltd | Surface modified metallic member, its production, and its use |
| JP2016516903A (en) * | 2013-04-02 | 2016-06-09 | エムエスティ− コリア シ−オ−．， エルティ−ディ−．ＭＳＴ ＫＯＲＥＡ Ｃｏ．， Ｌｔｄ． | Laser direct structuring method |
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