JPS63241824A - Manufacture of superconductor - Google Patents
Manufacture of superconductorInfo
- Publication number
- JPS63241824A JPS63241824A JP62076818A JP7681887A JPS63241824A JP S63241824 A JPS63241824 A JP S63241824A JP 62076818 A JP62076818 A JP 62076818A JP 7681887 A JP7681887 A JP 7681887A JP S63241824 A JPS63241824 A JP S63241824A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconductor
- composition ratio
- target
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 229910052594 sapphire Inorganic materials 0.000 abstract description 2
- 239000010980 sapphire Substances 0.000 abstract description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 abstract 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. group elements Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、例えばジョセフソン素子、超伝導記憶素子
等の超電導デバイスや、マイスナー効果による磁気シー
ルドＩｌｌ用いられる超電導体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION "Industrial Application Field" The present invention relates to a method of manufacturing a superconductor used in superconducting devices such as Josephson elements and superconducting memory elements, and magnetic shields based on the Meissner effect.
「従来の技術」
近来、常電導状態から超電導状態へ遷移する臨界温度（
Ｔ’Ｃ）が極めて高い酸化物系の超電導材料が種々発見
されつつある。そして、このような超電導材料を用いて
薄膜状の超電導体を製造するにｉよ、従来、超電導材料
からなるターゲットに加速イオンを衝突させて、その表
面から叩き出された原子を基板上に薄膜状に付着させる
高周波スパッタ法が採られている。"Conventional technology" Recently, the critical temperature (
Various oxide-based superconducting materials with extremely high T'C) are being discovered. In order to manufacture thin film superconductors using such superconducting materials, conventionally, accelerated ions are bombarded with a target made of superconducting material, and the atoms ejected from the surface are deposited onto a thin film on a substrate. A high-frequency sputtering method is used to deposit the material in a uniform manner.
「発明が解決しようとする問題点−１
ところが、このような方法では、超電導材料を構成する
元素の−・部が、ターゲットから叩き出されて基板上に
飛来する間に散逸してしまい、このため製造された薄膜
状の超電導体の各元素の組成比を所望の値に制御するこ
とが困難である。したがって、最適な各元素の組成比を
決定して超電導特性の向上を図ることが困難であるとい
う問題があった。``Problem to be solved by the invention - 1 However, in this method, part of the elements constituting the superconducting material is ejected from the target and dissipated while flying onto the substrate. Therefore, it is difficult to control the composition ratio of each element in the manufactured thin film superconductor to a desired value.Therefore, it is difficult to determine the optimal composition ratio of each element and improve the superconducting properties. There was a problem that.
また、各元素の組成」ｊテを変更するには、新たに所望
の組成比のり・−・ゲットを作製しなければならないと
いう問題があった。Furthermore, in order to change the composition of each element, there is a problem in that a new glue--get with a desired composition ratio must be prepared.
［゛発明の目、的ｊ
この発明は、上記間、題に鑑みて八されたもので、薄膜
状の超電導体の各元素の組成比を制御することにより、
最適な組成比を決定して超電導特性の向上を図ることが
できる超電導体の製造方法を提供することを目的として
いる。[Aim of the Invention, Objectives] This invention was developed in view of the above problems, and by controlling the composition ratio of each element in a thin film superconductor,
The object of the present invention is to provide a method for manufacturing a superconductor that can improve superconducting properties by determining an optimal composition ratio.
「問題点を解決するための手段」
この発明の超電導体の製造方法は、酸化物系の超電導体
を構成する元素のうち少なくと６−元素を含む複数種類
の化合物の薄膜を積層することにより超電導体を構成す
る全ての元素を含む積層薄膜を形成し、次いで、この積
層薄膜に熱処理を施すことを特徴としている。"Means for Solving the Problems" The method for producing a superconductor of the present invention involves laminating thin films of multiple types of compounds containing at least six of the elements constituting an oxide-based superconductor. The method is characterized in that a laminated thin film containing all the elements constituting the superconductor is formed, and then this laminated thin film is subjected to heat treatment.
「実施例」
図はこの発明をＬ ａ−８ｒ−Ｃｕ−０系の超電導薄膜
の製造方法に適用した一例を説明するためのもので、こ
の系の超電導薄膜を製造するには、まず、Ｌａｔ、ｓ、
５ｒＯ１ＣｕＯのそれぞれからなる三種類のターゲット
（Ｔ１）、（Ｔ、）、（Ｔ、）を用意する。"Example" The figure is for explaining an example in which the present invention is applied to a method for manufacturing a superconducting thin film of the La-8r-Cu-0 system. ,s,
Three types of targets (T1), (T, ), and (T,) each consisting of 5rO1CuO are prepared.
次に、ターゲット（Ｔ ｔ）をスパッタ装置にセットし
てＡｒガス雰囲気で高周波スパッタリングを行うことに
よりサファイア等からなる基板ｌ上にＬａｗ’ｓからな
る薄膜２を形成する。Next, a target (Tt) is set in a sputtering device and high frequency sputtering is performed in an Ar gas atmosphere to form a thin film 2 made of Law's on the substrate l made of sapphire or the like.
次いで、スパッタ装置にターゲット（Ｔ、）をセットし
て上記と同様にしてスパッタリングを行うことによりこ
の薄膜２上にＳｒＯからなる′薄膜３を形成する。次い
で、ターゲット（Ｔ、）を用いて上記と同様にしてスパ
ッタリングを行うことにより薄膜２上にＣｕＯからなる
薄膜４を形成する。さらに、この薄膜４上に上記と同様
にして薄膜２を形成する。そして、この工程を所定の回
数だけ操り返すことにより基板１上に積層薄膜５を形成
する。このようにして形成された積層薄膜５中に含まれ
る各元素（超電導体を構成する元素）の組成比の制御は
各層の膜厚を制御することにより行なわれる。Next, a target (T, ) is set in a sputtering device and sputtering is performed in the same manner as described above to form a thin film 3 made of SrO on this thin film 2. Next, a thin film 4 made of CuO is formed on the thin film 2 by performing sputtering using the target (T, ) in the same manner as described above. Furthermore, the thin film 2 is formed on this thin film 4 in the same manner as described above. Then, by repeating this process a predetermined number of times, a laminated thin film 5 is formed on the substrate 1. The composition ratio of each element (the element constituting the superconductor) contained in the laminated thin film 5 thus formed is controlled by controlling the film thickness of each layer.
次に、この積層薄膜５に、真空雰囲気で熱処理（加熱温
度：８００℃〜１１００℃、加熱時間：１時間〜１００
時間）を施す。これにより、薄膜２中のＬａ、Ｏと、薄
膜３中のＳｒ、Ｏと、薄膜４中のＣｕ、Ｏとが相１に拡
散し反応して、積層薄膜５が均一な薄膜状の超電導体と
なる。Next, this laminated thin film 5 is subjected to heat treatment in a vacuum atmosphere (heating temperature: 800°C to 1100°C, heating time: 1 hour to 100°C).
time). As a result, La and O in the thin film 2, Sr and O in the thin film 3, and Cu and O in the thin film 4 diffuse into the phase 1 and react, so that the laminated thin film 5 becomes a uniform thin film superconductor. becomes.
上記超電導体の製造方法によれば、超、電導体を構成す
る元素を含む三種類の薄膜２．３．４を積層して積層薄
膜５を形成し、この積層薄［５に熱処理を施すことによ
り超電導体を製造したので、積層薄膜５の各層の膜厚を
制御することにより、超電導体の各元素の組成比を制御
することができ、よって最適な各元素の組成比を決定し
て超電導特性の向上を図ることができる。According to the method for producing a superconductor, three types of thin films 2.3.4 containing elements constituting the superconductor are laminated to form a laminated thin film 5, and the laminated thin film 5 is subjected to heat treatment. Since the superconductor was manufactured using the above method, by controlling the thickness of each layer of the laminated thin film 5, the composition ratio of each element in the superconductor can be controlled. Therefore, the optimal composition ratio of each element can be determined to make the superconductor. It is possible to improve the characteristics.
また、組成比の変更が、積層薄膜５の暦数および各層の
層厚（膜厚）を変更することにより自在に行えるので、
従来の組成比を変更する際に新たに所望の組成比のター
ゲットを作製する必要がない。In addition, the composition ratio can be freely changed by changing the number of layers of the laminated thin film 5 and the layer thickness (film thickness) of each layer.
When changing the conventional composition ratio, there is no need to create a new target with the desired composition ratio.
さらに、積層薄１１１５の熱処理温度および時間をコン
トロールすることにより積層薄膜５の一部分のみに超電
導性を持たせることができるので、この部分をジョセフ
ソン接合のブリッジ部どすることができる。Further, by controlling the heat treatment temperature and time of the thin layered film 1115, only a portion of the thin layered film 5 can be imparted with superconductivity, so that this portion can be used as a bridge portion of a Josephson junction.
なお、上記実施例においては、この発明をＬａ−５ｒ−
Ｃｕ−０系のものについて適用したが、Ｌａの代わりに
Ｓｃ、Ｙ 、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｅｕ、Ｇ
ｄ。In addition, in the above-mentioned example, this invention is La-5r-
It was applied to Cu-0 series, but instead of La, Sc, Y, La, Ce, Pr, Nd, Pm, Eu, G
d.
Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ等のＩｎａ
族元素、また、Ｓｒの代わりにＢｅ、Ｓ ｒ、Ｍｇ、Ｂ
ａ、Ｒａ等のアルカリ土類金属元素が用いられた酸化物
系のものに適用してもよい。Ina such as Tb, Dy, Ho, Er, Tm, Yb, Lu, etc.
group elements, and Be, Sr, Mg, B instead of Sr
It may also be applied to oxide-based materials using alkaline earth metal elements such as a, Ra, etc.
また、基板ｌ上に薄膜２．３．４をこの順で積層するこ
とにより積層薄膜５を形成したが、薄膜２゜３．４を順
不同に積層してもよい。Further, although the laminated thin film 5 was formed by laminating the thin films 2.3.4 in this order on the substrate l, the thin films 2.3.4 may be laminated in random order.
「発明の効果」
以上説明したように、この発明によれば、超電導体を構
成する元素のうち少なくとも一元素を含む複数種類の化
合物の薄膜を積層することにより形成された積層薄膜に
熱処理を施すことにより超電導体を製造したので、積層
薄膜の各層の膜厚を制御することにより、超電導体の各
元素の組成比を制御することができ、よって最適な各元
素の組成比を決定して超電導特性の向上を図ることがで
きる。"Effects of the Invention" As explained above, according to the present invention, heat treatment is applied to a laminated thin film formed by laminating thin films of multiple types of compounds containing at least one of the elements constituting a superconductor. By controlling the thickness of each layer of the laminated thin film, it is possible to control the composition ratio of each element in the superconductor. Therefore, by determining the optimal composition ratio of each element, superconductivity can be achieved. It is possible to improve the characteristics.
また、組成比の変更が、積層薄膜の層数および６后のＦ
！ＪＪ！Ｌ（膜厚）を変更することにより自在に行える
ので、従来のように組成比を変更する際に新たに所望の
組成比のターゲットを作製する必要がない。In addition, changing the composition ratio can change the number of layers of the laminated thin film and the F after 6
! JJ! Since this can be done freely by changing L (film thickness), there is no need to create a new target with the desired composition ratio when changing the composition ratio as in the conventional case.
さらに、積層薄膜の熱処理温度および時間をコントロー
ルすることにより積層薄膜の一部分のみに超電導性を持
たせることができるので、この部分をジョセフソン接合
のブリッジ部とすることができる。Furthermore, by controlling the heat treatment temperature and time of the laminated thin film, it is possible to impart superconductivity to only a portion of the laminated thin film, so that this portion can be used as the bridge portion of the Josephson junction.
図はこの発明の超電導体の製造方法の一実施例を説明す
るためのものであり、基板上に形成された積層薄膜の断
面図である。
２・・・・・・ＬａｔＯａからなる薄膜（化合物の薄膜
）、３・・・・・・ＳｒＯからなる薄膜 （〃）、４・
・・・・・ＣｕＯからなる薄膜 （〃）、５・・・・・
・積層薄膜。The figure is for explaining one embodiment of the method for manufacturing a superconductor of the present invention, and is a cross-sectional view of a laminated thin film formed on a substrate. 2... Thin film made of LatOa (thin film of compound), 3... Thin film made of SrO (〃), 4...
...Thin film made of CuO (〃), 5...
・Laminated thin film.
Claims (1)
導体を構成する元素のうち少なくとも一元素を含む複数
種類の化合物の薄膜を積層することにより上記超電導体
を構成する全ての元素を含む積層薄膜を形成し、次いで
、この積層薄膜に熱処理を施すことを特徴とする超電導
体の製造方法。A method for producing an oxide-based superconductor, the method comprising laminating thin films of multiple types of compounds containing at least one of the elements constituting the superconductor, the method comprising: containing all the elements constituting the superconductor; 1. A method for producing a superconductor, comprising forming a laminated thin film and then subjecting the laminated thin film to heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62076818A JPS63241824A (en) | 1987-03-30 | 1987-03-30 | Manufacture of superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62076818A JPS63241824A (en) | 1987-03-30 | 1987-03-30 | Manufacture of superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63241824A true JPS63241824A (en) | 1988-10-07 |
Family
ID=13616252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62076818A Pending JPS63241824A (en) | 1987-03-30 | 1987-03-30 | Manufacture of superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63241824A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274657A (en) * | 1987-05-06 | 1988-11-11 | Semiconductor Energy Lab Co Ltd | Oxide superconductive material |
| JPH0320459A (en) * | 1989-06-16 | 1991-01-29 | Matsushita Electric Ind Co Ltd | Production of thin film of copper oxide |
| US5141917A (en) * | 1988-11-29 | 1992-08-25 | Fujitsu Limited | Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O Superconducting films |
| US5162295A (en) * | 1989-04-10 | 1992-11-10 | Allied-Signal Inc. | Superconducting ceramics by sequential electrodeposition of metals, followed by oxidation |
| US5219834A (en) * | 1989-05-23 | 1993-06-15 | Sanyo Electric Co., Ltd. | Process for producing a superconducting transistor |
| US5274249A (en) * | 1991-12-20 | 1993-12-28 | University Of Maryland | Superconducting field effect devices with thin channel layer |
| US5527767A (en) * | 1989-04-11 | 1996-06-18 | Matsushita Electric Industrial Co., Ltd. | Method for annealing thin film superconductors |
-
1987
- 1987-03-30 JP JP62076818A patent/JPS63241824A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274657A (en) * | 1987-05-06 | 1988-11-11 | Semiconductor Energy Lab Co Ltd | Oxide superconductive material |
| JPH0579605B2 (en) * | 1987-05-06 | 1993-11-04 | Handotai Energy Kenkyusho | |
| US5141917A (en) * | 1988-11-29 | 1992-08-25 | Fujitsu Limited | Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O Superconducting films |
| US5585332A (en) * | 1988-11-29 | 1996-12-17 | Fujitsu Limited | Process for preparing a perovskite Bi-containing superconductor film |
| US5162295A (en) * | 1989-04-10 | 1992-11-10 | Allied-Signal Inc. | Superconducting ceramics by sequential electrodeposition of metals, followed by oxidation |
| US5527767A (en) * | 1989-04-11 | 1996-06-18 | Matsushita Electric Industrial Co., Ltd. | Method for annealing thin film superconductors |
| US5219834A (en) * | 1989-05-23 | 1993-06-15 | Sanyo Electric Co., Ltd. | Process for producing a superconducting transistor |
| JPH0320459A (en) * | 1989-06-16 | 1991-01-29 | Matsushita Electric Ind Co Ltd | Production of thin film of copper oxide |
| US5274249A (en) * | 1991-12-20 | 1993-12-28 | University Of Maryland | Superconducting field effect devices with thin channel layer |
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