JPS6324121Y2 - - Google Patents
Info
- Publication number
- JPS6324121Y2 JPS6324121Y2 JP119984U JP119984U JPS6324121Y2 JP S6324121 Y2 JPS6324121 Y2 JP S6324121Y2 JP 119984 U JP119984 U JP 119984U JP 119984 U JP119984 U JP 119984U JP S6324121 Y2 JPS6324121 Y2 JP S6324121Y2
- Authority
- JP
- Japan
- Prior art keywords
- support
- hole
- holder
- support tube
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 229910002804 graphite Inorganic materials 0.000 claims description 20
- 239000010439 graphite Substances 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000006698 induction Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
本考案は板状の黒鉛、金属などの基材に化学蒸
着法により被膜を形成するための化学気相蒸着装
置の改良に関する。
化学気相蒸着法とは高温での気相化学反応、例
えば揮発性の金属ハロゲン化物、金属の有機化合
物、炭化水素化合物などの熱分解、水素還元、置
換反応などによつて金属、黒鉛などの基材の表面
に高融点金属、炭化物、硼化物、珪化物、窒化物
などの蒸着層を形成させる方法である。
上記の場合における反応温度は使用する原料ガ
ス、対象となる被膜の材質あるいは被膜の性質
（例えば結晶形態、物理特性など）によつて異な
るが、一般に500〜2000℃の範囲から選定される。
さらに上記の原料ガスを蒸着装置内部に搬送し
場合によつては上記気相反応において還元などの
重要な役割をもつ、いわゆるキヤリアガスとして
は水素などの活性ガスやまたは窒素、アルゴンな
どの不活性ガスが使用されているが、キヤリアガ
スに活性ガスが使用され、かつ反応温度が高い
（一般に1400℃以上）場合には蒸着装置の構造部
材の耐熱性が問題となり構造部材の寿命に影響を
与えるばかりでなく、構造部材が熱劣化する過程
で有害なガスを発生し正常な気相反応が行なわれ
ないなどの問題があつた。
上記につきさらに図面により説明する。
第１図は従来使用されている代表的な化学気相
蒸着装置であり、図において、３は被膜が形成さ
れる基材であり、これは通常黒鉛製の円板状の支
持体１６に載置される。そして上記支持体１６は
チヤンバーベース４とワークコイルカバー８，
９，１０に囲まれた空間内に収納された銅製のワ
ークコイル７によつて高周波誘導を受け発熱し基
材３を加熱する。そしてチヤンバーベース４の中
央に設けられた孔４ａに挿入されたノズルホルダ
ー１１およびノズル１２を通つた原料ガス（キヤ
リアガスも含む）１はチヤンバー５に囲まれた空
間内を矢印の方向に流動し基材３に蒸着被膜を形
成する。
さらに支持体１６における中央に設けられた孔
部１７は上部孔１７ａと該上部孔１７ａと同心
で、かつこれより内径の大きい下部孔１７ｂとで
構成され、上記孔部１７に該孔部１７に相当する
オス形の外面形状を有する通常黒鉛製のホルダー
１５を下方から嵌着し支持体１６が支えられる。
そしてホルダー１５は下側から支持管１４に接続
され該支持管１４はさらにチヤツク１３に支持さ
れている。
上記構造の部材構成の材料としては従来最も高
温となる支持体１６と、該支持体１６に次いで高
温となり、かつ熱勾配を生じ易くさらに支持体１
６との融着を防止する必要があるホルダー１５に
は前述のように通常黒鉛が使用されている。次に
支持管１４には石英、SiC，Si3N4，アルミナ磁
器など、さらにチヤツク１３にはこの部分は回転
駆動源との連結およびガスシール機構の付属があ
るため強度、機械加工上からステンレス鋼が使用
されている。
なお、支持管１４またはチヤツク１３のいずれ
かは、支持体１６に発生する誘導電流が外部へ漏
洩して加熱効率の低下、感電事故あるいは正常な
蒸着反応の阻害を生ずることがないように電気絶
縁体でなくてはならない。
以上従来装置の構造について説明したが、本構
造の場合、反応温度が1400℃未満では正常に運転
することが可能であつた。しかし反応温度が1400
℃以上でキヤリアガスが活性の場合、例えば基材
３の表面温度が1500℃必要のときには直接の加熱
源である支持体１６自体は1500℃以上の高温とし
なくてはならない。基材３が10mm程度の黒鉛板で
支持体１６の厚さが20mmのとき100℃位の温度差
を必要とする。この場合、支持体１６に直接接触
するホルダー１５は支持体１６から熱移動を受け
るとともに、つば部下面１５ａでも高周波誘導を
受けしたがつてホルダー１５も支持体１６と同程
度の高温度となるので黒鉛が用いられる。この場
合、上記黒鉛材は高伝熱性を有するためホルダー
下側接続部１５ｂも1400℃以上の高温となり、こ
れに接続される支持管１４の上端も高熱を受ける
ことになる。上記支持管の材質としては、断熱性
と電気絶縁性を必要とするため従来前述のように
石英やSiCなどが使用されているが、上記高温に
より石英の場合には軟化、溶融し容易に変形し、
またSiCあるいはアルミナ磁器などの場合には急
激な熱勾配および電気的負荷によりクラツクが発
生し、さらにSi3N4の場合には水素ガスおよび各
種原料ガス（特に金属ハロゲン化物）からなる高
温の活性ガス雰囲気中では化学的な消耗が激しく
不具合である。
本考案の目的は上記のような問題点を解決し、
反応温度1400℃以上でかつキヤリアガスとして活
性ガスを用いた場合においても安定した高温度の
化学蒸着操作が可能な化学気相蒸着装置を提供す
ることにある。
本考案は化学気相反応を行なうための反応室
と、該反応室に原料ガスを供給する供給管と、上
記反応室内に水平に配置する円板状の黒鉛製の支
持体および該支持体の下方に設けた加熱部材を具
備し、かつ上記ガス供給管を上記加熱部材と上記
支持体の中央の孔部に取付けられた黒鉛製のホル
ダーおよび該ホルダーを支持する支持管を貫通し
て立設してなる化学気相蒸着装置において、上部
孔と該上部孔と同心で、かつこれより内径の大き
い下部孔からなる支持体の中央の孔部に外周に上
記支持体の下面よりも上方となる下面を有するつ
ば部を形成した円筒状のホルダーを、上記つば部
の上面と上記下部孔の上面との互いに接触する面
のいずれかにおよび上記つば部の上方となる円筒
部の外周面と上記上部孔の内周面との互いに接触
する面のいずれかに、周溝部を設けて接触面積を
減少させて取付けるとともに、上記ホルダーの下
部に軸方向となる複数のスリツトを設けた黒鉛製
の中空円筒状の上部支持管を接続し、さらに該上
部支持管の下部に電気絶縁性中空円筒状の下部支
持管を接続してなる化学気相蒸着装置に関する。
本発明において、ホルダーの材質は耐熱性、耐
熱衝撃性及び耐食性に優れる黒鉛を使用する。上
部支持管もホルダーと同様な理由で黒鉛を使用す
る。下部支持管は断熱性及び電気絶縁性の点から
石英が好ましいが、蒸着条件によつてはアルミナ
磁器、Si3N4等のセラミツクス材料を使用しても
よい。
以下図面により本考案を説明する。
第２図は本考案の一実施例になる化学気相蒸着
装置の要部縦断面図、第３図はホルダーの一部切
欠断面図、第４図は上部支持管の正面図である。
図において、２０は黒鉛製の支持体であり該支持
体２０の中央に設けられた孔部２１は上部孔２１
ａと該上部孔２１ａと同心でかつこれより内径の
大きい下部孔２１ｂとで構成した。この場合、下
部孔２１ｂの深さ（すなわち下面２０ａから下部
孔２１ｂの上面２１ｃまでの高さ）は高周波誘導
の影響を避けるために強度的に許される限り大き
くとることが好ましい。当実施例ではホルダーの
つば部厚みの２倍とした。
次に黒鉛製のホルダー１９は第３図に示すよう
に、上部円筒面１９ａ、つば部上面１９ｂ、つば
部円筒面１９ｃ、つば部下面１９ｄ、下部円筒面
１９ｅ、上部円筒面１９ａに設けられた深さ0.1
〜５mm程度の円筒形の周溝部１９ｆ、さらにつば
部上面１９ｂに設けられた深さ0.1〜５mm程度の
円筒形の周溝部１９ｇおよび下部接続孔１９ｈか
ら構成した。なお上記つば部下面１９ｄは前述し
たように支持体２０の下面２０ａよりも上方とな
るように設けた。上記ホルダー１９は周溝部１９
ｆを除いた上部円筒面１９ａを支持体２０の上部
孔２１ａの内周面に、また周溝部１９ｇを除いた
つば部上面１９ｂを支持体２０の下部孔２１ｂの
上面２１ｃに接触せしめて孔部２１に取付けた。
次にホルダー１９の下部接続孔１９ｈに接続され
る黒鉛製の上部支持管１８は第４図に示すように
上部孔１８ａ、上部円筒面１８ｂ、中間円錐面１
８ｃ、下部円筒面１８ｄ、下部孔１８ｅさらに上
部円筒面１８ｂから下部円筒面１８ｄに至る軸方
向のスリツト１８ｆの４個から構成した。なお上
部支持管１８の長さは運転中に下部孔１８ｅが
1000℃を越えないように設定し、下部支持管２２
は石英製で中空円筒形としてチヤツク１３に対し
断熱性と絶縁性とを確保した。
本実施例における上記以外の部分の構成は第１
図に示した従来の装置と同一である。
上記したように実施例では、まず支持体２０の
孔部２１に取付けたホルダー１９のつば部下面１
９ｄを支持体２０の下面２０ａより上方としたの
で高周波誘導加熱によるホルダーにおける発熱が
抑制され、さらに支持体の孔部におけるホルダー
との直接接触する面積を少なくするとともに、気
体断熱膜を形成する周溝部を設けたので支持体か
らホルダーを経て支持管への移動熱裏を軽減する
ことができた。さらに支持管を分割し黒鉛製の上
部支持管と石英製の下部支持管としたため、全体
的に耐熱性、耐熱衝撃性、耐食性、断熱性、電気
絶縁性が向上した。また上部支持管の軸方向にス
リツトを設けたため周方向への高周波誘導電流の
流れを防止するとともに、上方から下方への熱移
動も抑制された。
次に実施例の化学気相蒸着装置と従来のものに
つき高温蒸着を行つた場合における結果は第１表
に示すごとくである。
なお実験条件は、基材が黒鉛（外径160mm円板）
蒸着被膜がSiC、原料ガスがSiCl4およびCCl4（モ
ル比Si／Ｃ1.0）、キヤリヤガスがH2、反応温度
が基材表面1500℃（±20℃）、支持体1600〜1630
℃、操作時間が昇温20分、蒸着60分、冷却60分で
ある。
The present invention relates to an improvement of a chemical vapor deposition apparatus for forming a film on a substrate such as plate-shaped graphite or metal by a chemical vapor deposition method. Chemical vapor deposition is a chemical vapor deposition method that uses vapor phase chemical reactions at high temperatures, such as thermal decomposition of volatile metal halides, metal organic compounds, hydrocarbon compounds, hydrogen reduction, substitution reactions, etc. to produce metals, graphite, etc. This is a method of forming a vapor deposition layer of a high melting point metal, carbide, boride, silicide, nitride, etc. on the surface of a base material. The reaction temperature in the above case varies depending on the raw material gas used, the material of the target film, or the properties of the film (eg, crystal form, physical properties, etc.), but is generally selected from the range of 500 to 2000°C. Furthermore, the so-called carrier gas, which transports the above-mentioned raw material gas into the interior of the vapor deposition apparatus and, in some cases, plays an important role such as reduction in the above-mentioned gas phase reaction, is an active gas such as hydrogen, or an inert gas such as nitrogen or argon. However, if an active gas is used as the carrier gas and the reaction temperature is high (generally over 1400°C), the heat resistance of the structural members of the vapor deposition equipment becomes a problem, which only affects the lifespan of the structural members. However, there were problems such as harmful gases being generated during the process of thermal deterioration of structural members and normal gas phase reactions not being carried out. The above will be further explained with reference to the drawings. FIG. 1 shows a typical chemical vapor deposition apparatus conventionally used. In the figure, 3 is a substrate on which a coating is formed, and this is usually mounted on a disc-shaped support 16 made of graphite. be placed. The support body 16 includes the chamber base 4 and the work coil cover 8,
A copper work coil 7 housed in a space surrounded by 9 and 10 receives high frequency induction and generates heat to heat the base material 3. The raw material gas (including carrier gas) 1 that passes through the nozzle holder 11 and nozzle 12 inserted into the hole 4a provided in the center of the chamber base 4 flows in the direction of the arrow in the space surrounded by the chamber 5. A vapor deposition film is formed on the base material 3. Furthermore, the hole 17 provided at the center of the support body 16 is composed of an upper hole 17a and a lower hole 17b that is concentric with the upper hole 17a and has a larger inner diameter than the upper hole 17a. A support 16 is supported by fitting a holder 15, which is usually made of graphite and has a corresponding male external shape, from below.
The holder 15 is connected to a support tube 14 from below, and the support tube 14 is further supported by the chuck 13. As for the materials of the member configuration of the above structure, the support 16 has the highest temperature conventionally, and the support 16 has the second highest temperature after the support 16 and is likely to cause a thermal gradient.
Graphite is usually used for the holder 15, which needs to be prevented from being fused to the holder 6, as described above. Next, the support tube 14 is made of quartz, SiC, Si 3 N 4 , alumina porcelain, etc., and the chuck 13 is made of stainless steel for strength and machining reasons since this part is connected to the rotational drive source and has a gas seal mechanism. steel is used. Note that either the support tube 14 or the chuck 13 is electrically insulated so that the induced current generated in the support 16 does not leak to the outside and cause a decrease in heating efficiency, an electric shock accident, or an obstruction to the normal vapor deposition reaction. It has to be the body. The structure of the conventional apparatus has been described above, and in the case of this structure, it was possible to operate normally at a reaction temperature of less than 1400°C. However, the reaction temperature is 1400
When the carrier gas is active at temperatures above 1500°C, for example, when the surface temperature of the substrate 3 is required to be 1500°C, the support 16 itself, which is a direct heating source, must be heated to a high temperature of 1500°C or above. When the base material 3 is a graphite plate of about 10 mm and the thickness of the support 16 is 20 mm, a temperature difference of about 100° C. is required. In this case, the holder 15 that is in direct contact with the support 16 receives heat transfer from the support 16, and also receives high frequency induction on the lower surface 15a of the brim, so the holder 15 also has a temperature as high as that of the support 16. Graphite is used. In this case, since the graphite material has high heat conductivity, the lower connecting portion 15b of the holder will also reach a high temperature of 1400° C. or higher, and the upper end of the support tube 14 connected thereto will also be exposed to high heat. As mentioned above, quartz and SiC are conventionally used as the material for the support tube because they require thermal insulation and electrical insulation properties, but quartz softens, melts, and easily deforms due to the high temperatures mentioned above. death,
In addition, in the case of SiC or alumina porcelain, cracks occur due to sudden thermal gradients and electrical loads, and in the case of Si 3 N 4 , cracks occur due to high temperature activation caused by hydrogen gas and various raw material gases (especially metal halides). In a gas atmosphere, chemical consumption is severe and this is a problem. The purpose of this invention is to solve the above problems,
An object of the present invention is to provide a chemical vapor deposition apparatus capable of stable high-temperature chemical vapor deposition even when the reaction temperature is 1400° C. or higher and an active gas is used as a carrier gas. The present invention includes a reaction chamber for carrying out a chemical vapor phase reaction, a supply pipe for supplying raw material gas to the reaction chamber, a disk-shaped graphite support placed horizontally in the reaction chamber, and a support for the support. A heating member is provided below, and the gas supply pipe is erected through a graphite holder attached to a hole in the center of the heating member and the support, and a support pipe that supports the holder. In a chemical vapor deposition apparatus comprising: an upper hole and a lower hole that is concentric with the upper hole and has a larger inner diameter than the upper hole; A cylindrical holder formed with a flange having a lower surface is attached to one of the surfaces where the upper surface of the flange and the upper surface of the lower hole are in contact with each other, and to the outer circumferential surface of the cylindrical portion above the flange. A hollow made of graphite is provided with a circumferential groove on one of the surfaces in contact with the inner peripheral surface of the upper hole to reduce the contact area, and a plurality of slits in the axial direction are provided in the lower part of the holder. The present invention relates to a chemical vapor deposition apparatus in which a cylindrical upper support tube is connected, and an electrically insulating hollow cylindrical lower support tube is connected to the lower part of the upper support tube. In the present invention, the material of the holder is graphite, which has excellent heat resistance, thermal shock resistance, and corrosion resistance. The upper support tube also uses graphite for the same reason as the holder. The lower support tube is preferably made of quartz from the standpoint of thermal insulation and electrical insulation, but ceramic materials such as alumina porcelain and Si 3 N 4 may also be used depending on the deposition conditions. The present invention will be explained below with reference to the drawings. FIG. 2 is a longitudinal cross-sectional view of a main part of a chemical vapor deposition apparatus according to an embodiment of the present invention, FIG. 3 is a partially cutaway cross-sectional view of a holder, and FIG. 4 is a front view of an upper support tube.
In the figure, 20 is a support made of graphite, and a hole 21 provided in the center of the support 20 is an upper hole 21.
a, and a lower hole 21b that is concentric with the upper hole 21a and has a larger inner diameter than the upper hole 21a. In this case, the depth of the lower hole 21b (that is, the height from the lower surface 20a to the upper surface 21c of the lower hole 21b) is preferably set as large as possible in terms of strength in order to avoid the influence of high frequency induction. In this example, the thickness is twice the thickness of the holder's brim. Next, as shown in FIG. 3, the graphite holder 19 is provided on an upper cylindrical surface 19a, a collar upper surface 19b, a collar cylindrical surface 19c, a lower collar surface 19d, a lower cylindrical surface 19e, and an upper cylindrical surface 19a. depth 0.1
It consists of a cylindrical circumferential groove part 19f with a depth of about 0.1 to 5 mm, a cylindrical circumferential groove part 19g with a depth of about 0.1 to 5 mm, and a lower connecting hole 19h provided on the upper surface 19b of the collar part. Note that the lower surface 19d of the brim is provided above the lower surface 20a of the support 20, as described above. The holder 19 has a circumferential groove 19
The upper cylindrical surface 19a excluding f is brought into contact with the inner peripheral surface of the upper hole 21a of the support body 20, and the collar upper surface 19b excluding the circumferential groove portion 19g is brought into contact with the upper surface 21c of the lower hole 21b of the support body 20 to form a hole. Installed on 21.
Next, the graphite upper support tube 18 connected to the lower connection hole 19h of the holder 19 has an upper hole 18a, an upper cylindrical surface 18b, and an intermediate conical surface 1 as shown in FIG.
8c, a lower cylindrical surface 18d, a lower hole 18e, and an axial slit 18f extending from the upper cylindrical surface 18b to the lower cylindrical surface 18d. Note that the length of the upper support pipe 18 is determined by the length of the lower hole 18e during operation.
Set it so that the temperature does not exceed 1000℃, and lower the support tube 22.
The chuck 13 is made of quartz and has a hollow cylindrical shape to ensure heat insulation and insulation properties for the chuck 13. The configuration of the parts other than the above in this example is as follows.
This is the same as the conventional device shown in the figure. As described above, in the embodiment, first, the lower surface 1 of the collar of the holder 19 is attached to the hole 21 of the support 20.
9d is placed above the lower surface 20a of the support 20, heat generation in the holder due to high-frequency induction heating is suppressed, and furthermore, the area in the hole of the support that comes into direct contact with the holder is reduced, and the circumference forming the gas insulating film is Since the groove was provided, it was possible to reduce heat transfer from the support body to the support tube via the holder. Furthermore, by dividing the support tube into an upper support tube made of graphite and a lower support tube made of quartz, the overall heat resistance, thermal shock resistance, corrosion resistance, heat insulation, and electrical insulation properties were improved. Furthermore, since the upper support tube was provided with a slit in the axial direction, it was possible to prevent the flow of high frequency induced current in the circumferential direction, and also to suppress heat transfer from above to below. Next, Table 1 shows the results when high-temperature vapor deposition was performed using the chemical vapor deposition apparatus of the example and the conventional chemical vapor deposition apparatus. The experimental conditions were as follows: The base material was graphite (160 mm outer diameter disk).
The deposited film is SiC, the raw material gases are SiCl 4 and CCl 4 (molar ratio Si/C 1.0), the carrier gas is H 2 , the reaction temperature is 1500°C (±20°C) on the substrate surface, and the support is 1600 to 1630°C.
℃, and the operation time was 20 minutes for heating, 60 minutes for vapor deposition, and 60 minutes for cooling.
【表】
第１表の結果より明らかなように実施例の化学
気相蒸着装置は、従来装置のような支持管の損傷
がなく高温度における基材への被膜形成処理に優
れている。
なお、実施例ではホルダー側に周溝を形成し、
これによりホルダーと支持体孔部との接触面積を
低減したが、これと反応に支持体孔部内側の方に
周溝を形成してもよいことはいうまでもない。
本考案によれば、反応温度1400℃以上でかつ活
性ガスの雰囲気中でも安定した高温度の化学蒸着
操作が可能であり、支持管などの繰返しの使用が
可能となる。[Table] As is clear from the results in Table 1, the chemical vapor deposition apparatus of the example does not damage the support tube unlike the conventional apparatus, and is excellent in forming a film on a substrate at high temperatures. In addition, in the example, a circumferential groove is formed on the holder side,
Although this reduces the contact area between the holder and the support hole, it goes without saying that a circumferential groove may be formed inside the support hole in response to this. According to the present invention, stable high-temperature chemical vapor deposition operation is possible at a reaction temperature of 1400° C. or higher even in an active gas atmosphere, and support tubes and the like can be repeatedly used.
第１図は従来の化学気相蒸着装置の縦断面図、
第２図は本考案の一実施例になる化学気相蒸着装
置の要部縦断面図、第３図はホルダーの一部切欠
断面図、第４図は上部支持管の正面図である。
符号の説明、１……原料ガス、２……排ガス、
３……基材、４……チヤンバーベース、５……チ
ヤンバー、６……パツキング、７……ワークコイ
ル、８，９，１０……ワークコイルカバー、１１
……ノズルホルダー、１２……ノズル、１３……
チヤツク、１４……支持管、１５……ホルダー、
１５ａ……つば部、１５ｂ……下側接続部、１６
……支持体、１７……孔部、１７ａ……上部孔、
１７ｂ……下部孔、１８……上部支持管、１８ａ
……上部孔、１８ｂ……上部円筒面、１８ｃ……
中間円錐面、１８ｄ……下部円筒面、１８ｅ……
下部孔、１８ｆ……スリツト、１９……ホルダ
ー、１９ａ……上部円筒面、１９ｂ……つば部上
面、１９ｃ……つば部円筒面、１９ｄ……つば部
下面、１９ｅ……下部円筒面、１９ｆ……周溝
部、１９ｇ……周溝部、１９ｈ……下部接続孔、
２０……支持体、２０ａ……下面、２１……孔
部、２１ａ……上部孔、２１ｂ……下部孔、２１
ｃ……上面、２２……下部支持管。
Figure 1 is a vertical cross-sectional view of a conventional chemical vapor deposition apparatus.
FIG. 2 is a longitudinal cross-sectional view of a main part of a chemical vapor deposition apparatus according to an embodiment of the present invention, FIG. 3 is a partially cutaway cross-sectional view of a holder, and FIG. 4 is a front view of an upper support tube. Explanation of symbols, 1... Raw material gas, 2... Exhaust gas,
3... Base material, 4... Chamber base, 5... Chamber, 6... Packing, 7... Work coil, 8, 9, 10... Work coil cover, 11
... Nozzle holder, 12 ... Nozzle, 13 ...
chuck, 14... support tube, 15... holder,
15a...Brim part, 15b...Lower connection part, 16
... Support body, 17 ... Hole, 17a ... Upper hole,
17b... lower hole, 18... upper support tube, 18a
...Top hole, 18b...Top cylindrical surface, 18c...
Middle conical surface, 18d...Lower cylindrical surface, 18e...
Lower hole, 18f...Slit, 19...Holder, 19a...Upper cylindrical surface, 19b...Brim upper surface, 19c...Brim cylindrical surface, 19d...Brim lower surface, 19e...Lower cylindrical surface, 19f ... Peripheral groove part, 19g ... Peripheral groove part, 19h ... Lower connection hole,
20... Support body, 20a... Lower surface, 21... Hole, 21a... Upper hole, 21b... Lower hole, 21
c...Top surface, 22...Lower support tube.
Claims (1)
に原料ガスを供給するガス供給管と、上記反応室
内に水平に配置する円板状の黒鉛製の支持体およ
び該支持体の下方に設けた加熱部材を具備し、か
つ上記ガス供給管を上記加熱部材と上記支持体の
中央の孔物に取付けられた黒鉛製のホルダーおよ
び該ホルダーを支持する支持管を貫通して立設し
てなる化学気相蒸着装置において、上部孔と該上
部孔と同心でかつこれより内径の大きい下部孔と
からなる支持体の中央の孔部に、外周に上記支持
体の下面よりも上方となる下面を有するつば部を
形成した円筒状のホルダーを、上記つば部の上面
と上記下部孔の上面との互いに接触する面のいず
れかにおよび上記つば部の上方となる円筒部の外
周面と上記上部孔の内周面との互いに接触する面
のいずれかに周溝部を設けて接触面積を減少させ
て取付けるとともに、上記ホルダーの下部に軸方
向の複数のスリツトを設けた黒鉛製の中空円筒状
の上部支持管を接続し、さらに該上部支持管の下
部に、電気絶縁性中空円筒状の下部支持管を接続
してなる化学気相蒸着装置。 A reaction chamber for carrying out a chemical vapor phase reaction, a gas supply pipe for supplying raw material gas to the reaction chamber, a disk-shaped graphite support disposed horizontally within the reaction chamber, and a support below the support. and a heating member provided therein, and the gas supply pipe is erected through the heating member and a graphite holder attached to a hole in the center of the support, and a support pipe that supports the holder. In a chemical vapor deposition apparatus, a support consisting of an upper hole and a lower hole concentric with the upper hole and having a larger inner diameter than the upper hole has a lower surface on the outer periphery that is above the lower surface of the support. A cylindrical holder having a flange formed thereon is placed between the upper surface of the flange and the upper surface of the lower hole that contact each other, and between the outer peripheral surface of the cylindrical portion above the flange and the upper surface of the cylindrical holder. A hollow cylinder made of graphite is provided with a circumferential groove on one of the surfaces in contact with the inner peripheral surface of the hole to reduce the contact area, and a plurality of slits in the axial direction are provided at the bottom of the holder. A chemical vapor deposition apparatus comprising an upper support tube connected to the upper support tube, and an electrically insulating hollow cylindrical lower support tube connected to the lower part of the upper support tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP119984U JPS60113370U (en) | 1984-01-09 | 1984-01-09 | chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP119984U JPS60113370U (en) | 1984-01-09 | 1984-01-09 | chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60113370U JPS60113370U (en) | 1985-07-31 |
| JPS6324121Y2 true JPS6324121Y2 (en) | 1988-07-01 |
Family
ID=30473727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP119984U Granted JPS60113370U (en) | 1984-01-09 | 1984-01-09 | chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60113370U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6013113B2 (en) | 2012-09-27 | 2016-10-25 | 東京エレクトロン株式会社 | Manufacturing method of heating element |
-
1984
- 1984-01-09 JP JP119984U patent/JPS60113370U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60113370U (en) | 1985-07-31 |
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