JPS63239812A - Manufacture of electric-insulating dissimilar single crystal substrate with silicon single crystal film - Google Patents
Manufacture of electric-insulating dissimilar single crystal substrate with silicon single crystal filmInfo
- Publication number
- JPS63239812A JPS63239812A JP7136287A JP7136287A JPS63239812A JP S63239812 A JPS63239812 A JP S63239812A JP 7136287 A JP7136287 A JP 7136287A JP 7136287 A JP7136287 A JP 7136287A JP S63239812 A JPS63239812 A JP S63239812A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- hydrogen
- crystal film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 16
- 238000001947 vapour-phase growth Methods 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 abstract description 14
- 239000010980 sapphire Substances 0.000 abstract description 14
- 239000007789 gas Substances 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 239000003085 diluting agent Substances 0.000 abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001257 hydrogen Substances 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 208000034248 vanishing lung syndrome Diseases 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
イ）発明の目的
〔産業上の利用分野〕
本発明はＩＣ，ＶＬＳＩ等のデバイス等に有用な、シリ
コン単結晶膜を有する電気絶縁性異種単結晶基板の製造
方法に関するものである。Detailed Description of the Invention A) Purpose of the Invention [Field of Industrial Application] The present invention relates to a method for manufacturing an electrically insulating heterogeneous single crystal substrate having a silicon single crystal film, which is useful for devices such as IC and VLSI. It is something.
従来、結晶格子定数がシリコンに近いサファイア等の電
気絶縁性異種単結晶基板上に、シリコンを気相成長させ
ることにより、シリコン単結晶膜を形成させる方法はよ
く知られている。Conventionally, a method of forming a silicon single crystal film by vapor phase growth of silicon on an electrically insulating heterogeneous single crystal substrate such as sapphire, which has a crystal lattice constant close to that of silicon, is well known.
しかしながら、この従来法で得られたシリコン単結晶膜
は、
■単結晶が完全でない
■結晶欠陥が多い
■例えばサファイア基板等から浮遊するアルミニウム等
の混入がある
等の問題があり、良質のシリコン単結晶膜を得ることは
困難であった。However, the silicon single crystal film obtained by this conventional method has problems such as: ■ The single crystal is not perfect ■ There are many crystal defects ■ For example, there is contamination with aluminum floating from the sapphire substrate etc. It was difficult to obtain a crystalline film.
このような問題を解決する為に、シリコンを、速い膜成
長速度、例えば２μｍ／分以上で気相成長させる方法、
また初め速く次いで遅い成長速度で気相成長させる方法
、さらに初期の気相成長速度を比較的遅くして下地膜を
成長させ、引き続き比較的速い成長速度で気相成長させ
る方法、あるいは多結晶または非晶質のシリコン膜を基
板の上に所定の厚さだけ付着した後、単結晶膜を気相成
長させる方法等が試みられているが、前記の問題点を解
決するまでには至っていなかった。In order to solve such problems, a method of growing silicon in a vapor phase at a fast film growth rate, for example, 2 μm/min or more,
In addition, there are methods of vapor phase growth at an initial fast and then slow growth rate, further methods of growing a base film at a relatively slow initial vapor phase growth rate, and subsequent vapor phase growth at a relatively high growth rate, or methods of growing polycrystalline or Attempts have been made to deposit an amorphous silicon film to a predetermined thickness on a substrate and then grow a single crystal film in a vapor phase, but these methods have not yet solved the above problems. Ta.
また電気絶縁性異種単結晶基板上へ気相成長させるシリ
コンの原料としては、以前は四塩化珪素が用いられてい
たが、最近は主にモノシランが使用されている。この理
由としては、四塩化珪素よりモノシランの方が、より低
い温度でシリコンを気相成長させることが可能であり、
たとえばサファイア基板中のアルミニウムがシリコン成
長層中へオートドーピングやオートディヒユージョンせ
ず、より良質なシリコン単結晶膜が得られるためと言わ
れている。Furthermore, although silicon tetrachloride was previously used as a raw material for silicon to be grown in a vapor phase on an electrically insulating heterogeneous single crystal substrate, recently monosilane has been mainly used. The reason for this is that monosilane allows silicon to be grown in vapor phase at a lower temperature than silicon tetrachloride.
For example, it is said that this is because aluminum in the sapphire substrate does not auto-dope or auto-diffusion into the silicon growth layer, resulting in a higher quality silicon single crystal film.
しかしながらモノシランを用いる方法によっても、上記
したような問題を完全に解決したシリコン単結晶膜を得
ることは出来ず、実用上さらに改良することが望まれて
いる。However, even with the method using monosilane, it is not possible to obtain a silicon single crystal film that completely solves the above-mentioned problems, and further improvements are desired for practical use.
本発明者らは、シリコン単結晶膜の結晶が完全で、結晶
欠陥がなく、生産効率に優れ、かつ各種のＩＣ，ＶＬＳ
Ｉ等のデバイスに適用しうるシリコン単結晶膜を有する
電気絶縁性異種単結晶基板の製造方法につき鋭意研究し
た結果、本発明を完成した。The present inventors have discovered that the silicon single crystal film is perfectly crystallized, has no crystal defects, has excellent production efficiency, and can be used for various ICs and VLSs.
The present invention was completed as a result of intensive research into a method for manufacturing an electrically insulating heterogeneous single crystal substrate having a silicon single crystal film that can be applied to devices such as I.
口）発明の構成
〔問題点を解決する手段〕
本発明は気相成長法によりシリコン単結晶膜を有する電
気絶縁性異種単結晶基板を製造するにあたり、ジシラン
を原料とすることを特徴とするシリコン単結晶膜を有す
る電気絶縁性異種単結晶基板の製造方法である。(1) Structure of the Invention [Means for Solving the Problems] The present invention provides a method for producing an electrically insulating heterogeneous single-crystal substrate having a silicon single-crystal film by a vapor phase growth method, which is characterized in that disilane is used as a raw material. This is a method for manufacturing an electrically insulating heterogeneous single crystal substrate having a single crystal film.
本発明においてシリコン単結晶膜を形成すべき電気絶縁
性異種単結晶基板は、好ましくは結晶格子定数がシリコ
ンのそれに近いものであり、例えばサファイア基板、ス
ピネル基板等が挙げられる。In the present invention, the electrically insulating heterogeneous single crystal substrate on which the silicon single crystal film is to be formed preferably has a crystal lattice constant close to that of silicon, and includes, for example, a sapphire substrate, a spinel substrate, and the like.
更に好ましいものはサファイア基板であり、サファイア
基板としては、特に限定されるものではないが、たとえ
ば（０１１２）面、（１１丁４）面、（０００１）面等
の面方位のものが好ましい。More preferred is a sapphire substrate, and although the sapphire substrate is not particularly limited, for example, those having a (0112) plane, (11-4) plane, (0001) plane, etc. are preferable.
本発明におけるジシラン（ＳｉｚＨ８）は高純度のもの
が望ましい。ジシランを反応系へ供給する場合は、単独
で供給してもよいが、希釈ガスと共に供給するのがより
好ましい。希釈ガスとしてはｉ常、水素、不活性ガスが
挙げられ、好ましくは水素、ヘリウムである。希釈ガス
はいずれも精製したものを用いるのがよく、例えば水素
はパラジウム膜透過精製、モレキュラーシーブによる吸
着精製したものを用いればよい。The disilane (SizH8) used in the present invention is preferably of high purity. When disilane is supplied to the reaction system, it may be supplied alone, but it is more preferable to supply it together with a diluent gas. Examples of the diluent gas include hydrogen and inert gases, with hydrogen and helium being preferred. It is preferable to use purified diluent gases; for example, hydrogen may be purified by permeation through a palladium membrane or purified by adsorption using a molecular sieve.
ジシランと希釈ガスを反応系に供給する場合、別々に供
給してもよいが、両者が充分に混合されているのがより
望ましく、例えば混合器を用いて供給する方法が挙げら
れる。When disilane and diluent gas are supplied to the reaction system, they may be supplied separately, but it is more desirable that they are sufficiently mixed, for example, a method of supplying them using a mixer can be mentioned.
ジシランと希釈ガスの反応系への供給割合は、ジシラン
と希釈ガスの合計量基準で、ジシランが０．００１Ｖｏ
１％〜１Ｏｖｏ１％が好ましい。０゜００１Ｖｏ１％未
満ではジシランの成長速度が遅くなり過ぎ実用的でなく
なる恐れあり、１０Ｖｏ１％を越えると、反応器壁への
堆積、あるいは気相中での核成長によるジシランのロス
が大きくなるのみならず、生成した微粉がシリコン膜に
入り結晶欠陥の原因となる恐れがある。The supply ratio of disilane and diluent gas to the reaction system is based on the total amount of disilane and diluent gas, and disilane is 0.001 Vo.
1% to 1Ovo1% is preferable. If it is less than 0.001Vo1%, the growth rate of disilane may become too slow to be practical, and if it exceeds 10Vo1%, the loss of disilane due to deposition on the reactor wall or nucleus growth in the gas phase will only increase. Otherwise, the generated fine powder may enter the silicon film and cause crystal defects.
ジシランを分解してシリコン単結晶を気相成長させる手
段としては、各種ＣＶＤを適用する事が出来るが、熱Ｃ
ＶＤが好ましい。Various CVD methods can be used to decompose disilane and grow silicon single crystals in a vapor phase.
VD is preferred.
熱ＣＶＤを行うための加熱手段としては、高周波加熱、
赤外線ランプによる加熱等を用いればよいが、低温成長
を行えるという利点を生かして、抵抗加熱を用いてもよ
い。Heating means for thermal CVD include high frequency heating,
Although heating with an infrared lamp or the like may be used, resistance heating may also be used, taking advantage of the ability to perform low-temperature growth.
気相成長温度は１３００°Ｃ〜５００ ’Ｃが好ましく
、更に好ましくは９００°Ｃ〜６００°Ｃである。The vapor phase growth temperature is preferably 1300°C to 500'C, more preferably 900°C to 600°C.
５００°Ｃ未満ではシリコン単結晶膜の成長速度が非常
に小さくなり、成長に要する時間が長くなるため実用的
であるとは言えず、また結晶欠陥が増大したり多結晶に
なる恐れがあり電気的特性の悪化につながる可能性があ
る。１３００ ’Ｃを越えるとシリコン単結晶膜へのア
ルミニウムの混入が促進され、電気的特性が悪くなる可
能性の他、基板上へのシリコン単結晶膜の堆積後、室温
に戻すとシリコン単結晶膜と基板との界面に応力が生じ
、電気特性への劣化につながる可能性がある。If the temperature is below 500°C, the growth rate of the silicon single crystal film will be very slow and the time required for growth will be long, making it impractical, and crystal defects may increase and polycrystalline formation may occur. may lead to deterioration of physical characteristics. If the temperature exceeds 1300'C, the incorporation of aluminum into the silicon single crystal film will be promoted, which may deteriorate the electrical characteristics, and if the silicon single crystal film is returned to room temperature after being deposited on the substrate, the silicon single crystal film will Stress is generated at the interface between the material and the substrate, which may lead to deterioration of electrical characteristics.
成長速度は０． ００１ ａｍ ／ｗｉｎ −１０ａｍ
／ｌ１ｉｎが好ましい。０． ００１ ａｒｍ ／ｎ
＋ｉｎ未満では成長が遅すぎて実用的であるとは言えず
、ｌＯμｍ／ｗｉｎを越えると完全な単結晶を得がたく
なる。Growth rate is 0. 001 am /win -10am
/l1in is preferred. 0. 001 arm/n
If it is less than +in, the growth is too slow to be practical, and if it exceeds 10 μm/win, it becomes difficult to obtain a perfect single crystal.
反応器は縦型、横型、バレル型等が挙げられるが、特に
その形状を問うものではない。The reactor may be of a vertical type, horizontal type, barrel type, etc., but its shape is not particularly limited.
圧力は常圧でも、減圧、加圧下でも行えるが、好ましく
は５ Ｔｏｒｒ〜９００Ｔｏｒｒである。５ Ｔｏｒｒ
未満ではシリコン単結晶膜の成長速度が遅くなり過ぎ、
９００Ｔｏｒｒを越えると反応器の選択範囲が限定され
、る恐れがあるため好ましいとは言えない。The pressure may be normal pressure, reduced pressure, or increased pressure, but is preferably 5 Torr to 900 Torr. 5 Torr
If it is below, the growth rate of the silicon single crystal film will be too slow,
If it exceeds 900 Torr, the selection range of the reactor is limited and there is a possibility that it is not preferable.
本発明において電気絶縁性異種単結晶基板上に形成させ
るべきシリコン単結晶膜の厚さは、使用目的に応じて適
宜定めればよい。In the present invention, the thickness of the silicon single crystal film to be formed on the electrically insulating heterogeneous single crystal substrate may be determined as appropriate depending on the purpose of use.
また本発明方法におけるその他の操作方法及び操作条件
などは、気相成長の技術分野において知られているとこ
ろに従えば足りる。Further, other operating methods and operating conditions in the method of the present invention may be in accordance with those known in the technical field of vapor phase growth.
以下に実施例および比較例を示して本発明をさらに具体
的に説明する。The present invention will be explained in more detail by showing Examples and Comparative Examples below.
実施例１
第１図に示した如き装置を用いてサファイア基板上にシ
リコン単結晶膜を形成させた。すなわち高周波加熱タイ
プの縦型石英製反応管８内のＳｉＣコートしたグラファ
イト製サセプター（回転数５ｒｐｗｒ ） ７上に、苛
性カリ水溶液で超音波洗浄し、脱イオン水で充分洗浄、
乾燥した、厚さが０．４ＩＩＩＩ１１３大きさが２イン
チの鏡面研磨したサファイア基板（０１１２）６を載置
した。Example 1 A silicon single crystal film was formed on a sapphire substrate using an apparatus as shown in FIG. That is, a SiC-coated graphite susceptor (rotation speed 5 rpwr) 7 in a high-frequency heating type vertical quartz reaction tube 8 was ultrasonically cleaned with a caustic potash aqueous solution, thoroughly washed with deionized water,
A dried, mirror-polished sapphire substrate (0112) 6 with a thickness of 0.4III113 and a size of 2 inches was placed.
水素精製装置２により精製した水素１を反応管８に１２
／分で流しながら、高周波加熱用コイル５により、サフ
ァイア基板６の温度を室温から９００°Ｃまで５分間で
上昇させ、同温度で１０分間保った。Hydrogen 1 purified by hydrogen purifier 2 is transferred to reaction tube 8 12
The temperature of the sapphire substrate 6 was raised from room temperature to 900° C. in 5 minutes using the high-frequency heating coil 5 while flowing at a rate of 1/min, and was maintained at the same temperature for 10 minutes.
その後同温度を保ち、マスフロメーター４により流量を
調節しながら、５Ｖｏ１％のジシランを含有する水素３
を５ｃｃ／分の流量で、また水素１を１β／分の流量で
、導入管１０より反応管８に流し、３分間シリコン単結
晶を気相成長させた。Thereafter, while maintaining the same temperature and adjusting the flow rate using the mass flow meter 4, hydrogen 3 containing 5Vo1% disilane was heated.
and hydrogen 1 at a flow rate of 1β/min were flowed into the reaction tube 8 from the introduction tube 10, and a silicon single crystal was grown in a vapor phase for 3 minutes.
反応管８の下部にはターボ分子ポンプ１１、回転式真空
ポンプ１２が接続され、これにより未反応ガス、希釈ガ
スを排気した。A turbo molecular pump 11 and a rotary vacuum pump 12 were connected to the lower part of the reaction tube 8 to exhaust unreacted gas and diluted gas.
堆積したシリコン単結晶膜９の膜厚は０．３μｍであり
、成長速度は０．１０μｍ／分であった。The thickness of the deposited silicon single crystal film 9 was 0.3 μm, and the growth rate was 0.10 μm/min.
このシリコン単結晶膜を電子線回折法により調べた結果
、菊池線がみられ、完全な単結晶であることが判った。When this silicon single crystal film was examined by electron beam diffraction, Kikuchi lines were observed, indicating that it was a perfect single crystal.
またエツチングにより結晶欠陥を調べたところ、エッチ
ピット、スタッフキングフォールト等は殆ど見られず良
質な結晶であった。Further, when crystal defects were examined by etching, the crystals were of good quality with almost no etch pits, stuffing faults, etc. observed.
また膜の比抵抗は２８０Ω−ｃｍであった。Further, the specific resistance of the film was 280 Ω-cm.
次いで、このサファイア基板上のシリコン単結晶膜を用
いてＭＯ３型ＦＥＴを試作し、電子易動度を測定したと
ころ６００ ｃｉ／ Ｖ−ｓｅｃであった。Next, an MO3 type FET was prototyped using the silicon single crystal film on the sapphire substrate, and the electron mobility was measured to be 600 ci/V-sec.
実施例２
サファイア基板の温度を８５０°Ｃにした以外は実施例
１と同様の方法でシリコン単結晶膜を製造した。得られ
た膜は菊池線がみられ完全な単結晶であることが判った
。Example 2 A silicon single crystal film was manufactured in the same manner as in Example 1 except that the temperature of the sapphire substrate was 850°C. The obtained film showed Kikuchi lines and was found to be a perfect single crystal.
比較例１
モノシランを原料とした以外は実施例２と同様の方法で
シリコン単結晶膜を製造したが、多結晶となった。Comparative Example 1 A silicon single crystal film was produced in the same manner as in Example 2 except that monosilane was used as the raw material, but the film was polycrystalline.
ハ）発明の効果
本発明によれば、低温で電気絶縁性異種単結晶基板上に
シリコン単結晶膜を製造することが出来、従来では実現
出来なかった、完全で殆ど結晶欠陥がない、電気的特性
にすぐれた、各種のＩＣ１■ＳＬＩ等のデバイス等に有
用されるシリコン単結晶膜を有する電気絶縁性異種単結
晶基板を、優れた生産効率で製造することが可能である
。c) Effects of the invention According to the present invention, it is possible to produce a silicon single crystal film on an electrically insulating heterogeneous single crystal substrate at low temperature, and it is possible to produce a silicon single crystal film on an electrically insulating heterogeneous single crystal substrate at a low temperature. It is possible to manufacture an electrically insulating heterogeneous single crystal substrate having a silicon single crystal film with excellent characteristics and useful for various devices such as IC1■SLI with excellent production efficiency.
第１図は本発明方法を行うに適した気相成長装置の一例
を示す概略図である。
１、水素
３、ジシランを含有する水素
５、高周波加熱用コイル
６、サファイア基板
７、サセプター
８、反応管
９、シリコン単結晶膜
１０、導入管FIG. 1 is a schematic diagram showing an example of a vapor phase growth apparatus suitable for carrying out the method of the present invention. 1, hydrogen 3, hydrogen containing disilane 5, high frequency heating coil 6, sapphire substrate 7, susceptor 8, reaction tube 9, silicon single crystal film 10, introduction tube
Claims (1)
縁性異種単結晶基板を製造するにあたり、ジシランを原
料とすることを特徴とするシリコン単結晶膜を有する電
気絶縁性異種単結晶基板の製造方法。1. Manufacturing an electrically insulating heterogeneous single crystal substrate having a silicon single crystal film using disilane as a raw material in manufacturing an electrically insulating heterogeneous single crystal substrate having a silicon single crystal film by a vapor phase growth method Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62071362A JPH0777203B2 (en) | 1987-03-27 | 1987-03-27 | Method for manufacturing sapphire substrate having silicon single crystal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62071362A JPH0777203B2 (en) | 1987-03-27 | 1987-03-27 | Method for manufacturing sapphire substrate having silicon single crystal film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63239812A true JPS63239812A (en) | 1988-10-05 |
| JPH0777203B2 JPH0777203B2 (en) | 1995-08-16 |
Family
ID=13458311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62071362A Expired - Lifetime JPH0777203B2 (en) | 1987-03-27 | 1987-03-27 | Method for manufacturing sapphire substrate having silicon single crystal film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0777203B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01226791A (en) * | 1988-03-07 | 1989-09-11 | Nec Corp | Molecular beam growth of silicon |
| US5221412A (en) * | 1989-09-26 | 1993-06-22 | Toagosei Chemical Industry Co., Ltd. | Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6193617A (en) * | 1984-10-15 | 1986-05-12 | Matsushita Electric Ind Co Ltd | Manufacture of silicon film |
| JPS61283113A (en) * | 1985-06-10 | 1986-12-13 | Sanyo Electric Co Ltd | Epitaxial growth method |
| JPS62159421A (en) * | 1986-01-07 | 1987-07-15 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-03-27 JP JP62071362A patent/JPH0777203B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6193617A (en) * | 1984-10-15 | 1986-05-12 | Matsushita Electric Ind Co Ltd | Manufacture of silicon film |
| JPS61283113A (en) * | 1985-06-10 | 1986-12-13 | Sanyo Electric Co Ltd | Epitaxial growth method |
| JPS62159421A (en) * | 1986-01-07 | 1987-07-15 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01226791A (en) * | 1988-03-07 | 1989-09-11 | Nec Corp | Molecular beam growth of silicon |
| US5221412A (en) * | 1989-09-26 | 1993-06-22 | Toagosei Chemical Industry Co., Ltd. | Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0777203B2 (en) | 1995-08-16 |
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