JPS63237428A - Pattern recognition system for semiconductor device - Google Patents

Abstract

PURPOSE:To enhance a recognition rate of a semiconductor device by a method wherein a visible-rays sharp-cut filter which selects only the light of a wavelength with low light reflectivity is installed in a light path from a light source of the while light to a photo-detecting part of the reflected light from the semiconductor device so that the wavelength of the light irradiating the semiconductor device can be selected. CONSTITUTION:In the light radiated from a light source 3 of the white light, the light in a visible region is cut by using an infrared-rays-transmitting and visible-rays sharp-cut filter 4; only the light in an infrared region is selected. This light irradiates a die 1 through a half mirror 5; its reflected light passes through the half mirror 5 and enters a camera 6. The reflectivity of a non- electrode part 2a at the die 2 is low against the radiated light of more than 8000 Angstrom , i.e. the light in a wavelength of the infrared region as compared with an electrode 2b. By this setup, the non-electrode part 2a is projected clearly as a black part and the electrode part 2b as a white part on an recognition system, i.e. on a monitor screen.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a pattern recognition device for semiconductor devices.

(Prior art) Conventionally, in this type of semiconductor device pattern recognition device, a semiconductor device is irradiated with white light, the reflected light is received by a camera, and the information is converted into a digital signal to detect dark areas. The image was divided into bright and bright areas, displayed on the monitor as black and white areas, and then projected and recognized as a pattern.

(Problems to be Solved by the Invention) However, the above pattern recognition i! il
Since the i-device uses white light as the irradiation light, it is difficult to clearly separate images into black and white areas unless there is a difference in reflectance between the electric bridge surface of the semiconductor element and the semiconductor element surface. In particular, in GaAs-based semiconductor devices, since an Au-based material is used for the electrodes, both the electrode portion and the non-electrode portion have high reflectance, making it difficult to clearly divide the monitor image into black and white portions.

The present invention aims to improve the recognition rate in pattern recognition of semiconductor devices by eliminating the problem that it is difficult to clearly distinguish between black and white parts of an image in a pattern recognition device using a white light source as described above. The purpose is to

(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a pattern recognition Sa device for semiconductor elements, from a white light source until reflected light from a semiconductor element enters a light receiving part. In the optical path, a visible light sharp cut filter is disposed to select only the light having a wavelength that has a low reflectance by the semiconductor element.

(Function) According to the present invention, compared to the conventional pattern recognition method based only on differences in reflectance on the surface of semiconductor elements, by using an infrared-transmitting visible light sharp-cut filter, the wavelength of light irradiated to semiconductor elements can be selected. By actively using the difference in reflectance depending on the wavelength of semiconductor elements, i! ! In the recognition device section, the semiconductor element to be recognized can be clearly divided into a white part and a black part.

(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a block diagram of a pattern recognition apparatus for a semiconductor element showing an embodiment of the present invention. Here, a case will be described in which pattern recognition of a wire bonder is performed.

FIG. 2 is an enlarged plan view of a wire bonder to be subjected to pattern recognition, and FIG. 3 is a diagram showing the transmittance characteristics of an infrared transmitting visible light sharp cut filter depending on the wavelength of light.

In FIG. 1, 1 is a header, 2 is a die, 3 is a white light source, 4 is an infrared transmitting visible light sharp cut filter, 5 is a half mirror, and 16 is a camera. Here, the die 2 mounted on the header l is GaA j! It is made of As material and has an emission wavelength of 9100 nm.

In the non-electrode portion 2a of the die (wire bonder) 2 shown in FIG. 2, the reflectance of light having a wavelength in the infrared region is
lower than b.

Figure 3 shows an infrared transmitting visible light sharp cut filter 4.
As is clear from this figure, this infrared transmitting visible light sharp cut filter 4 has the characteristic of sharply cutting light in the visible region of 8000 Å or less. That is, the light source 3 of white light
The light in the visible region is cut by the infrared transmitting visible light sharp cut filter 4, and only the light in the infrared region is selected. This light is irradiated onto the dice 1 by the half mirror 5, and the reflected light is reflected by the half mirror 5.
passes through and enters the camera 6.

The non-electrode portion 2a of the die 2 has a lower reflectance than the electrode portion 2b for irradiated light with a wavelength of 8000 Å or more, that is, light with a wavelength in the infrared region. Therefore, on a recognition device (not shown), that is, a monitor screen, the non-electrode portion 2a is clearly displayed as a black portion and the electrode portion 2b is clearly displayed as a white portion.

Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.

(Effects of the Invention) As described in detail above, according to the present invention, compared to the conventional pattern recognition method based only on the difference in reflectance on the surface of a semiconductor element, by using an infrared transmitting visible light sharp cut filter, By selecting the wavelength of the light irradiated to the semiconductor element and actively utilizing the difference in reflectance depending on the wavelength of the semiconductor element, the recognition device clearly separates the semiconductor element to be recognized into white and black areas. be able to. Therefore, it is possible to improve the recognition rate in pattern recognition of semiconductor elements.

[Brief explanation of the drawing]

Fig. 1 is a block diagram of a pattern recognition device for semiconductor devices showing an embodiment of the present invention, Fig. 2 is an enlarged plan view of a wire bonder that is the object of pattern recognition, and Fig. 3 is an infrared-transmitting visible light sharp-cut filter. FIG. 3 is a diagram showing transmittance characteristics depending on the wavelength of light. DESCRIPTION OF SYMBOLS 1... Header, 2... Dice, 3... White light source, 4... Infrared transmission visible light sharp cut filter, 5... Half mirror 16... Camera.

Claims (1)

[Scope of Claims] In a pattern recognition device for a semiconductor device using white light as a light source, the semiconductor device is irradiated with light from the light source, and the optical path of the light reflected from the semiconductor device reaches a light receiving section. 1. A pattern recognition device for a semiconductor device, characterized in that a visible light sharp-cut filter is disposed to select only light having a wavelength of low reflectance for the semiconductor device.